CN102820271B - 半导体装置 - Google Patents

半导体装置 Download PDF

Info

Publication number
CN102820271B
CN102820271B CN201210081415.7A CN201210081415A CN102820271B CN 102820271 B CN102820271 B CN 102820271B CN 201210081415 A CN201210081415 A CN 201210081415A CN 102820271 B CN102820271 B CN 102820271B
Authority
CN
China
Prior art keywords
base plate
semiconductor device
insulating substrate
semiconductor
main surface
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201210081415.7A
Other languages
English (en)
Chinese (zh)
Other versions
CN102820271A (zh
Inventor
上田哲也
山口义弘
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of CN102820271A publication Critical patent/CN102820271A/zh
Application granted granted Critical
Publication of CN102820271B publication Critical patent/CN102820271B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/70—Fillings or auxiliary members in containers or in encapsulations for thermal protection or control
    • H10W40/77—Auxiliary members characterised by their shape
    • H10W40/778—Auxiliary members characterised by their shape in encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/20—Arrangements for cooling
    • H10W40/25—Arrangements for cooling characterised by their materials
    • H10W40/255—Arrangements for cooling characterised by their materials having a laminate or multilayered structure, e.g. direct bond copper [DBC] ceramic substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/111—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed
    • H10W74/114—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed by a substrate and the encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5524—Materials of bond wires comprising metals or metalloids, e.g. silver comprising aluminium [Al]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/874—On different surfaces
    • H10W72/884—Die-attach connectors and bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/734—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked insulating package substrate, interposer or RDL
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/753—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between laterally-adjacent chips
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/754—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked insulating package substrate, interposer or RDL

Landscapes

  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
CN201210081415.7A 2011-06-09 2012-03-26 半导体装置 Active CN102820271B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2011129261A JP5602095B2 (ja) 2011-06-09 2011-06-09 半導体装置
JP2011-129261 2011-06-09

Publications (2)

Publication Number Publication Date
CN102820271A CN102820271A (zh) 2012-12-12
CN102820271B true CN102820271B (zh) 2015-04-08

Family

ID=47292483

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201210081415.7A Active CN102820271B (zh) 2011-06-09 2012-03-26 半导体装置

Country Status (4)

Country Link
US (1) US9029994B2 (https=)
JP (1) JP5602095B2 (https=)
CN (1) CN102820271B (https=)
DE (1) DE102012206596B4 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111095550A (zh) * 2017-10-23 2020-05-01 丹佛斯硅动力有限责任公司 具有夹持特征的功率模块和功率模块组件

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014046058A1 (ja) 2012-09-20 2014-03-27 ローム株式会社 パワーモジュール半導体装置およびインバータ装置、およびパワーモジュール半導体装置の製造方法、および金型
CN105190874B (zh) 2013-05-09 2018-05-18 三菱电机株式会社 半导体模块及半导体装置
DE102013216709B4 (de) * 2013-08-22 2021-03-25 Infineon Technologies Ag Halbleiteranordnung, verfahren zur herstellung einer anzahl von chipbaugruppen und verfahren zur herstellung einer halbleiteranordnung
JP6160698B2 (ja) * 2013-08-23 2017-07-12 富士電機株式会社 半導体装置
JP6154342B2 (ja) * 2013-12-06 2017-06-28 トヨタ自動車株式会社 半導体装置
JP2015170785A (ja) * 2014-03-10 2015-09-28 三菱電機株式会社 絶縁基板および電力用半導体装置
JP6356550B2 (ja) * 2014-09-10 2018-07-11 三菱電機株式会社 半導体装置およびその製造方法
CN104201116B (zh) 2014-09-12 2018-04-20 苏州晶方半导体科技股份有限公司 指纹识别芯片封装方法和封装结构
JP6320331B2 (ja) * 2015-03-16 2018-05-09 三菱電機株式会社 電力用半導体装置
JP2017135144A (ja) * 2016-01-25 2017-08-03 三菱電機株式会社 半導体モジュール
US9704812B1 (en) * 2016-05-06 2017-07-11 Atmel Corporation Double-sided electronic package
JP6673012B2 (ja) * 2016-05-26 2020-03-25 三菱電機株式会社 半導体装置およびその製造方法
JP6783128B2 (ja) * 2016-12-06 2020-11-11 三菱電機株式会社 リード加工装置
JP6665804B2 (ja) * 2017-01-30 2020-03-13 トヨタ自動車株式会社 半導体装置
JP7031172B2 (ja) * 2017-08-24 2022-03-08 富士電機株式会社 半導体装置
JP6816691B2 (ja) * 2017-09-29 2021-01-20 三菱電機株式会社 半導体装置
JP6848802B2 (ja) * 2017-10-11 2021-03-24 三菱電機株式会社 半導体装置
KR102496483B1 (ko) * 2017-11-23 2023-02-06 삼성전자주식회사 아발란치 광검출기 및 이를 포함하는 이미지 센서
JP7010143B2 (ja) * 2018-05-24 2022-02-10 三菱電機株式会社 絶縁基板の検査方法、検査装置
JP6906654B2 (ja) * 2018-06-05 2021-07-21 三菱電機株式会社 半導体装置およびその製造方法
JP2020031130A (ja) * 2018-08-22 2020-02-27 トヨタ自動車株式会社 半導体装置
JP7346178B2 (ja) * 2019-09-05 2023-09-19 株式会社東芝 半導体装置
CN114762109B (zh) * 2019-12-10 2025-05-23 三菱电机株式会社 半导体封装件
JP6999749B2 (ja) * 2020-06-16 2022-02-04 三菱電機株式会社 電気機器配線部品
US20240030101A1 (en) * 2020-09-17 2024-01-25 Hitachi Energy Switzerland Ag Power Module and Method for Producing a Power Module
CN116034473A (zh) 2020-10-14 2023-04-28 罗姆股份有限公司 半导体模块
JP7352754B2 (ja) 2020-10-14 2023-09-28 ローム株式会社 半導体モジュール
WO2022080122A1 (ja) 2020-10-14 2022-04-21 ローム株式会社 半導体モジュール
CN116018677A (zh) 2020-10-14 2023-04-25 罗姆股份有限公司 半导体模块
WO2022219934A1 (ja) 2021-04-12 2022-10-20 富士電機株式会社 半導体装置
WO2026028737A1 (ja) * 2024-08-01 2026-02-05 富士電機株式会社 半導体モジュール

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6166433A (en) * 1998-03-26 2000-12-26 Fujitsu Limited Resin molded semiconductor device and method of manufacturing semiconductor package
CN101030570A (zh) * 2006-03-03 2007-09-05 三菱电机株式会社 半导体装置
CN102005419A (zh) * 2009-08-27 2011-04-06 三菱电机株式会社 功率用半导体装置及其制造方法

Family Cites Families (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0661748A1 (en) * 1993-12-28 1995-07-05 Hitachi, Ltd. Semiconductor device
US5559373A (en) * 1994-12-21 1996-09-24 Solid State Devices, Inc. Hermetically sealed surface mount diode package
JP3429921B2 (ja) 1995-10-26 2003-07-28 三菱電機株式会社 半導体装置
JP3522975B2 (ja) 1996-06-11 2004-04-26 株式会社東芝 半導体装置
JP3491481B2 (ja) 1996-08-20 2004-01-26 株式会社日立製作所 半導体装置とその製造方法
JPH11204693A (ja) 1998-01-14 1999-07-30 Fuji Electric Co Ltd 半導体装置
JP4218193B2 (ja) * 2000-08-24 2009-02-04 三菱電機株式会社 パワーモジュール
JP4286465B2 (ja) * 2001-02-09 2009-07-01 三菱電機株式会社 半導体装置とその製造方法
JP2002246515A (ja) * 2001-02-20 2002-08-30 Mitsubishi Electric Corp 半導体装置
JP2003264265A (ja) * 2002-03-08 2003-09-19 Mitsubishi Electric Corp 電力用半導体装置
JP3864130B2 (ja) * 2002-10-10 2006-12-27 三菱電機株式会社 電力用半導体装置
DE10316356B4 (de) 2003-04-10 2012-07-26 Semikron Elektronik Gmbh & Co. Kg Modular aufgebautes Leistungshalbleitermodul
US7149088B2 (en) * 2004-06-18 2006-12-12 International Rectifier Corporation Half-bridge power module with insert molded heatsinks
JP4515298B2 (ja) * 2005-03-22 2010-07-28 富士フイルム株式会社 レーザー装置の組立方法
JP2006332291A (ja) * 2005-05-25 2006-12-07 Keihin Corp パワードライブユニット
EP1761114A3 (en) * 2005-08-31 2009-09-16 Kabushiki Kaisha Toyota Jidoshokki Circuit board
US7446411B2 (en) * 2005-10-24 2008-11-04 Freescale Semiconductor, Inc. Semiconductor structure and method of assembly
US7429790B2 (en) 2005-10-24 2008-09-30 Freescale Semiconductor, Inc. Semiconductor structure and method of manufacture
JP4821537B2 (ja) * 2006-09-26 2011-11-24 株式会社デンソー 電子制御装置
DE102006045939B4 (de) * 2006-09-28 2021-06-02 Infineon Technologies Ag Leistungshalbleitermodul mit verbesserter Temperaturwechselstabilität
US7755185B2 (en) * 2006-09-29 2010-07-13 Infineon Technologies Ag Arrangement for cooling a power semiconductor module
JP4471967B2 (ja) * 2006-12-28 2010-06-02 株式会社ルネサステクノロジ 双方向スイッチモジュール
JP5167963B2 (ja) * 2007-11-02 2013-03-21 大日本印刷株式会社 樹脂封止型半導体装置とそれに用いられるエッチング加工部材、および積層型樹脂封止型半導体装置
JP4941509B2 (ja) * 2008-10-20 2012-05-30 株式会社デンソー 電子制御装置
JP4825259B2 (ja) * 2008-11-28 2011-11-30 三菱電機株式会社 電力用半導体モジュール及びその製造方法
JP5071405B2 (ja) * 2009-02-13 2012-11-14 三菱電機株式会社 電力用半導体装置
JP5511515B2 (ja) * 2010-05-31 2014-06-04 株式会社日立製作所 電力変換装置
US8513806B2 (en) * 2011-06-30 2013-08-20 Rohm Co., Ltd. Laminated high melting point soldering layer formed by TLP bonding and fabrication method for the same, and semiconductor device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6166433A (en) * 1998-03-26 2000-12-26 Fujitsu Limited Resin molded semiconductor device and method of manufacturing semiconductor package
CN101030570A (zh) * 2006-03-03 2007-09-05 三菱电机株式会社 半导体装置
CN102005419A (zh) * 2009-08-27 2011-04-06 三菱电机株式会社 功率用半导体装置及其制造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111095550A (zh) * 2017-10-23 2020-05-01 丹佛斯硅动力有限责任公司 具有夹持特征的功率模块和功率模块组件

Also Published As

Publication number Publication date
US20120313252A1 (en) 2012-12-13
JP5602095B2 (ja) 2014-10-08
JP2012256746A (ja) 2012-12-27
US9029994B2 (en) 2015-05-12
DE102012206596B4 (de) 2017-11-16
DE102012206596A1 (de) 2013-01-03
CN102820271A (zh) 2012-12-12

Similar Documents

Publication Publication Date Title
CN102820271B (zh) 半导体装置
EP3026701B1 (en) Power module and manufacturing method thereof
JP6786416B2 (ja) 半導体装置
CN104285294B (zh) 半导体装置及该半导体装置的制造方法
US7902653B2 (en) Semiconductor module
US20150130042A1 (en) Semiconductor module with radiation fins
EP3026700B1 (en) Power module and manufacturing method thereof
US20130112993A1 (en) Semiconductor device and wiring substrate
KR20230092516A (ko) 양면 방열 전력반도체모듈 및 그 제조방법
EP2851951B1 (en) Method for manufacturing semiconductor device and semiconductor device
WO2023062972A1 (ja) 半導体モジュール及び半導体装置
JP7540248B2 (ja) 半導体モジュール
TW202406444A (zh) 基於頂側冷卻表面安裝離散裝置之雙面散熱型電源供應器
US11735557B2 (en) Power module of double-faced cooling
CN120359612A (zh) 双面冷却功率封装件
JP7577953B2 (ja) 半導体装置及び半導体装置の製造方法
CN117440651A (zh) 基于具有双面散热的顶侧冷却表面安装分立装置的电源块
JP7803460B2 (ja) 放熱ベース、半導体モジュール、及びエネルギー変換装置
JP7681920B2 (ja) 半導体パッケージ及びその製造方法
JP7770282B2 (ja) 半導体装置、電力変換装置および半導体装置の製造方法
US20240387334A1 (en) Semiconductor module and heat dissipation base
CN110770883A (zh) 半导体装置及电力变换装置
TW202518706A (zh) 半導體裝置
JP2025115059A (ja) 半導体モジュール
WO2025182086A1 (ja) 電力用半導体装置および電力変換装置

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant