JP5345017B2 - 電力用半導体装置とその製造方法 - Google Patents
電力用半導体装置とその製造方法 Download PDFInfo
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- JP5345017B2 JP5345017B2 JP2009196228A JP2009196228A JP5345017B2 JP 5345017 B2 JP5345017 B2 JP 5345017B2 JP 2009196228 A JP2009196228 A JP 2009196228A JP 2009196228 A JP2009196228 A JP 2009196228A JP 5345017 B2 JP5345017 B2 JP 5345017B2
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- 239000004065 semiconductor Substances 0.000 title claims description 148
- 238000004519 manufacturing process Methods 0.000 title claims description 36
- 239000011347 resin Substances 0.000 claims description 230
- 229920005989 resin Polymers 0.000 claims description 230
- 229910052751 metal Inorganic materials 0.000 claims description 150
- 239000002184 metal Substances 0.000 claims description 150
- 239000000758 substrate Substances 0.000 claims description 65
- 238000007789 sealing Methods 0.000 claims description 19
- 238000000034 method Methods 0.000 claims description 16
- 239000000919 ceramic Substances 0.000 claims description 14
- 239000003365 glass fiber Substances 0.000 claims description 5
- 229920001707 polybutylene terephthalate Polymers 0.000 claims description 5
- 239000005020 polyethylene terephthalate Substances 0.000 claims description 5
- 229920000139 polyethylene terephthalate Polymers 0.000 claims description 5
- 229920000069 polyphenylene sulfide Polymers 0.000 claims description 5
- 239000004677 Nylon Substances 0.000 claims description 4
- 239000004962 Polyamide-imide Substances 0.000 claims description 4
- 239000004642 Polyimide Substances 0.000 claims description 4
- 229920001778 nylon Polymers 0.000 claims description 4
- 229920002312 polyamide-imide Polymers 0.000 claims description 4
- 229920001721 polyimide Polymers 0.000 claims description 4
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 4
- 239000007977 PBT buffer Substances 0.000 claims 1
- 229920000470 poly(p-phenylene terephthalate) polymer Polymers 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 13
- 229910000679 solder Inorganic materials 0.000 description 9
- 238000001721 transfer moulding Methods 0.000 description 9
- 230000000694 effects Effects 0.000 description 7
- 230000004048 modification Effects 0.000 description 6
- 238000012986 modification Methods 0.000 description 6
- 239000000470 constituent Substances 0.000 description 5
- -1 polypropylene terephthalate Polymers 0.000 description 5
- 235000004522 Pentaglottis sempervirens Nutrition 0.000 description 4
- 239000004734 Polyphenylene sulfide Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 230000017525 heat dissipation Effects 0.000 description 3
- 239000002210 silicon-based material Substances 0.000 description 3
- 240000004050 Pentaglottis sempervirens Species 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000006073 displacement reaction Methods 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 238000011417 postcuring Methods 0.000 description 2
- 230000002457 bidirectional effect Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 230000002787 reinforcement Effects 0.000 description 1
- 239000011342 resin composition Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
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- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
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- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/565—Moulds
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- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
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- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
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- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
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- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
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- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48237—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a die pad of the item
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- H01L2224/732—Location after the connecting process
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- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
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Description
<構成>
図1は、実施の形態1の電力用半導体装置の断面図の一例を示す。実施の形態1の電力用半導体装置は、回路パターン6が形成された絶縁基板1、絶縁基板1の回路パターン6上に形成される電力用半導体7及び金属製ソケット電極端子8、金属製ソケット電極端子8と嵌合する一体型樹脂製スリーブ10を備えている。
実施の形態1の電力用半導体装置の製造工程について説明する。
本実施の形態の電力用半導体装置では、既に述べた通り以下の効果を奏する。すなわち、実施の形態1の電力用半導体装置は、絶縁基板1と、絶縁基板1上面に形成された回路パターン6と、回路パターン6上に形成された電力用半導体7と、回路パターン6又は電力用半導体7上に直立して形成され、外部端子と導通する複数の電極端子(金属製ソケット電極端子8)と、複数の金属製ソケット電極端子8にそれぞれ上部から嵌合する両端が開口した複数のスリーブ部9が一体となった一体型樹脂製スリーブ10と、絶縁基板1、回路パターン6、電力用半導体7、金属製ソケット電極端子8、一体型樹脂製スリーブ10を覆う封止樹脂16と、を備える。金型の型締め工程において一体型樹脂製スリーブ10が必要に応じて、キャビティ19内部の寸法に合わせて金属製ソケット電極端子8に圧入されるため、絶縁基板1、金属製ソケット電極端子8、はんだ4の厚さを厳しくコントロールする必要がない。よって、本構造を採用することにより、電極端子が上出し構造の電力用半導体装置を製造するにあたって、厳密に製造工程を管理することによる製造コストの増加や歩留り低下を回避することができる。また、複数のスリーブ部9を一体とした一体型樹脂製スリーブ10とすることにより、複数のスリーブ部9を容易に、対応する金属製ソケット電極端子8に嵌合することができる。
<構成>
図10は、実施の形態2の電力用半導体装置の構成を示す断面図である。図1に示した実施の形態1と同様の構成要素には同一の番号を付している。実施の形態2の電力用半導体装置では、一体型樹脂製スリーブ10の構造が実施の形態1の電力用半導体装置とは異なる。実施の形態1では棒状のランナー部11がスリーブ部9を連結していたが、実施の形態2では、図11に示すように、樹脂平板12に複数個のスリーブ部9が形成されることによって一体型樹脂製スリーブ10となる。これ以外の構成は、実施の形態1と同様である。
実施の形態2の電力用半導体装置の製造工程について説明する。
本実施の形態の電力用半導体装置は、実施の形態1の電力用半導体装置に加え、既に述べた通り以下の効果を奏する。すなわち、一体型樹脂製スリーブ10は、樹脂平板12に複数のスリーブ部9が形成された構造であることを特徴とする。これにより、複数のスリーブ部9の相対位置を正確に定めることができ、対応する金属製ソケット電極端子8に位置ずれなく嵌合することができる。
<構成>
図22は、実施の形態3の電力用半導体装置の構成を示す断面図である。図1に示した実施の形態1と同様の構成要素には同一の番号を付している。実施の形態3の電力用半導体装置は、実施の形態1の電力用半導体装置で用いたセラミック基板3の代わりに、絶縁性熱伝導シート5を用いるものである。ベース板2と回路パターン6を、絶縁性熱伝導シート5を介して一体化する。これ以外の構成は実施の形態1と同様であるため、説明を省略する。
実施の形態3の電力用半導体装置において、絶縁基板1は、ベース板2と回路パターン6が形成された絶縁性熱伝導シート5で構成されることを特徴とする。このような構成によっても、実施の形態1と同様に、内部部品や金型の寸法を厳しく管理せずとも、電極上出し構造の電力用半導体装置を提供することが可能である。
Claims (16)
- 絶縁基板と、
前記絶縁基板上面に形成された回路パターンと、
前記回路パターン上に形成された電力用半導体と、
前記回路パターン又は前記電力用半導体上に直立して形成され、外部端子と導通する複数の電極端子と、
複数の前記電極端子にそれぞれ上部から嵌合する両端が開口した複数のスリーブ部が棒状のランナー部により結合されて一体となった一体型樹脂製スリーブと、
前記絶縁基板、前記回路パターン、前記電力用半導体、前記電極端子、前記一体型樹脂製スリーブを覆う封止樹脂と、を備え、
前記一体型樹脂製スリーブの前記スリーブ部の上面は前記封止樹脂から露出し、
前記ランナー部は前記封止樹脂中に埋没することを特徴とする、
電力用半導体装置。 - 前記絶縁基板は多層構造であってその最下層は金属製のベース板であり、
前記ベース板の背面が前記封止樹脂から露出していることを特徴とする、請求項1に記載の電力用半導体装置。 - 前記スリーブ部の前記電極端子と嵌合する端部はテーパ形状であることを特徴とする請求項1又は2に記載の電力用半導体装置。
- 前記一体型樹脂製スリーブは、2種類以上の異なる内径を持つ前記スリーブ部を有することを特徴とする、請求項1〜3のいずれかに記載の電力用半導体装置。
- 前記スリーブ部は、内壁に周状の突起を有することを特徴とする請求項1〜4のいずれかに記載の電力用半導体装置。
- 前記一体型樹脂製スリーブは、PPS、PPT、PBT、PET、ナイロン、ポリイミド、ポリアミドイミド、又はガラス繊維によりそれらを補強した樹脂で形成されることを特徴とする請求項1〜5のいずれかに記載の電力用半導体装置。
- 前記スリーブ部は内部形状が円筒状であることを特徴とする、請求項1〜6のいずれかに記載の電力用半導体装置。
- 前記スリーブ部は内部形状が角筒状であることを特徴とする、請求項1〜6のいずれかに記載の電力用半導体装置。
- 前記一体型樹脂製スリーブの線膨張係数は、前記封止樹脂の線膨張係数と前記電極端子の線膨張係数との中間であることを特徴とする、請求項1〜8のいずれかに記載の電力用半導体装置。
- 前記一体型樹脂製スリーブの前記スリーブ部は、前記電極端子の上面が前記スリーブ部の上面より下に位置するように、前記電極端子に嵌合されることを特徴とする、請求項1〜9のいずれかに記載の電力用半導体装置。
- 前記スリーブ部の開口部から前記電極端子に向けて挿入、又は圧着される外部端子をさらに備える、請求項1〜10のいずれかに記載の電力用半導体装置。
- 前記絶縁基板は、前記ベース板と前記回路パターンが形成されたセラミック基板で構成されることを特徴とする、請求項2に記載の電力用半導体装置。
- 前記絶縁基板は、前記ベース板と前記回路パターンが形成された絶縁性熱伝導シートで構成されることを特徴とする、請求項2に記載の電力用半導体装置。
- 前記電力用半導体はシリコンカーバイド(SiC)から形成されることを特徴とする、請求項1〜13のいずれかに記載の電力用半導体装置。
- (a)絶縁基板と、前記絶縁基板上面に形成された回路パターンと、前記回路パターン上に形成された電力用半導体と、前記回路パターン又は前記電力用半導体上に直立して形成され、外部端子と導通する複数の電極端子と、を備える樹脂封止前の電力用半導体装置を準備する工程と、
(b)複数の前記電極端子の各々に対応して配設され且つ両端に開口部を有する複数のスリーブ部が棒状のランナー部により結合されて一体となった一体型樹脂製スリーブを、各前記スリーブ部が対応する各前記電極端子に嵌合するよう設置する工程と、
(c)金型の型締めを行うことにより前記一体型樹脂製スリーブに下方向の力を加え、前記電極端子の上面が、前記スリーブ部の上面よりも下に位置するように、前記スリーブ部を前記電極端子に圧入する工程と、
(d)前記スリーブ部の上面が前記金型の内壁に接した状態で、前記金型内の空洞(キャビティ)にモールド樹脂を充填する工程と、
(e)前記モールド樹脂が硬化した後前記金型を外す工程と、を備えた電力用半導体装置の製造方法。 - 前記工程(b)は、線膨張係数が前記モールド樹脂と前記電極端子の中間である前記一体型樹脂製スリーブを設置する工程である、請求項15に記載の電力用半導体装置の製造方法。
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