JP5595298B2 - 固体撮像装置及び撮像システム - Google Patents

固体撮像装置及び撮像システム Download PDF

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Publication number
JP5595298B2
JP5595298B2 JP2011026532A JP2011026532A JP5595298B2 JP 5595298 B2 JP5595298 B2 JP 5595298B2 JP 2011026532 A JP2011026532 A JP 2011026532A JP 2011026532 A JP2011026532 A JP 2011026532A JP 5595298 B2 JP5595298 B2 JP 5595298B2
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Japan
Prior art keywords
film
solid
state imaging
imaging device
photoelectric conversion
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Expired - Fee Related
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JP2011026532A
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English (en)
Japanese (ja)
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JP2011233862A (ja
JP2011233862A5 (enExample
Inventor
忠志 澤山
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Canon Inc
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Canon Inc
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Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2011026532A priority Critical patent/JP5595298B2/ja
Priority to US13/052,237 priority patent/US8525907B2/en
Priority to EP11159133.5A priority patent/EP2375448B1/en
Priority to KR1020110028185A priority patent/KR101358587B1/ko
Priority to CN201110079810.7A priority patent/CN102214668B/zh
Priority to RU2011113183/28A priority patent/RU2466478C1/ru
Publication of JP2011233862A publication Critical patent/JP2011233862A/ja
Priority to US13/951,674 priority patent/US9054243B2/en
Publication of JP2011233862A5 publication Critical patent/JP2011233862A5/ja
Application granted granted Critical
Publication of JP5595298B2 publication Critical patent/JP5595298B2/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/40—Optical elements or arrangements
    • H10F77/413—Optical elements or arrangements directly associated or integrated with the devices, e.g. back reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8067—Reflectors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8053—Colour filters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors

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  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Color Television Image Signal Generators (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP2011026532A 2010-04-06 2011-02-09 固体撮像装置及び撮像システム Expired - Fee Related JP5595298B2 (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2011026532A JP5595298B2 (ja) 2010-04-06 2011-02-09 固体撮像装置及び撮像システム
US13/052,237 US8525907B2 (en) 2010-04-06 2011-03-21 Solid-state image sensor and imaging system
EP11159133.5A EP2375448B1 (en) 2010-04-06 2011-03-22 Solid-state image sensor and imaging system
KR1020110028185A KR101358587B1 (ko) 2010-04-06 2011-03-29 고체 이미지 센서 및 촬상 시스템
CN201110079810.7A CN102214668B (zh) 2010-04-06 2011-03-31 固态图像传感器和成像系统
RU2011113183/28A RU2466478C1 (ru) 2010-04-06 2011-04-05 Твердотельный датчик изображения и система формирования изображения
US13/951,674 US9054243B2 (en) 2010-04-06 2013-07-26 Solid-state image sensor and imaging system

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2010088192 2010-04-06
JP2010088192 2010-04-06
JP2011026532A JP5595298B2 (ja) 2010-04-06 2011-02-09 固体撮像装置及び撮像システム

Publications (3)

Publication Number Publication Date
JP2011233862A JP2011233862A (ja) 2011-11-17
JP2011233862A5 JP2011233862A5 (enExample) 2014-02-13
JP5595298B2 true JP5595298B2 (ja) 2014-09-24

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JP2011026532A Expired - Fee Related JP5595298B2 (ja) 2010-04-06 2011-02-09 固体撮像装置及び撮像システム

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US (2) US8525907B2 (enExample)
EP (1) EP2375448B1 (enExample)
JP (1) JP5595298B2 (enExample)
KR (1) KR101358587B1 (enExample)
CN (1) CN102214668B (enExample)
RU (1) RU2466478C1 (enExample)

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Also Published As

Publication number Publication date
CN102214668B (zh) 2014-12-10
EP2375448A3 (en) 2012-08-29
KR101358587B1 (ko) 2014-02-04
US20110242350A1 (en) 2011-10-06
RU2466478C1 (ru) 2012-11-10
JP2011233862A (ja) 2011-11-17
EP2375448B1 (en) 2015-08-12
EP2375448A2 (en) 2011-10-12
CN102214668A (zh) 2011-10-12
US8525907B2 (en) 2013-09-03
US9054243B2 (en) 2015-06-09
US20130307109A1 (en) 2013-11-21
RU2011113183A (ru) 2012-10-10
KR20110112206A (ko) 2011-10-12

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