RU2466478C1 - Твердотельный датчик изображения и система формирования изображения - Google Patents
Твердотельный датчик изображения и система формирования изображения Download PDFInfo
- Publication number
- RU2466478C1 RU2466478C1 RU2011113183/28A RU2011113183A RU2466478C1 RU 2466478 C1 RU2466478 C1 RU 2466478C1 RU 2011113183/28 A RU2011113183/28 A RU 2011113183/28A RU 2011113183 A RU2011113183 A RU 2011113183A RU 2466478 C1 RU2466478 C1 RU 2466478C1
- Authority
- RU
- Russia
- Prior art keywords
- insulating film
- refractive index
- solid
- image sensor
- state image
- Prior art date
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Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/40—Optical elements or arrangements
- H10F77/413—Optical elements or arrangements directly associated or integrated with the devices, e.g. back reflectors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/806—Optical elements or arrangements associated with the image sensors
- H10F39/8067—Reflectors
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/805—Coatings
- H10F39/8053—Colour filters
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/806—Optical elements or arrangements associated with the image sensors
Landscapes
- Engineering & Computer Science (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Color Television Image Signal Generators (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010088192 | 2010-04-06 | ||
| JP2010-088192 | 2010-04-06 | ||
| JP2011026532A JP5595298B2 (ja) | 2010-04-06 | 2011-02-09 | 固体撮像装置及び撮像システム |
| JP2011-026532 | 2011-02-09 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| RU2011113183A RU2011113183A (ru) | 2012-10-10 |
| RU2466478C1 true RU2466478C1 (ru) | 2012-11-10 |
Family
ID=44247834
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| RU2011113183/28A RU2466478C1 (ru) | 2010-04-06 | 2011-04-05 | Твердотельный датчик изображения и система формирования изображения |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US8525907B2 (enExample) |
| EP (1) | EP2375448B1 (enExample) |
| JP (1) | JP5595298B2 (enExample) |
| KR (1) | KR101358587B1 (enExample) |
| CN (1) | CN102214668B (enExample) |
| RU (1) | RU2466478C1 (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| RU2574310C1 (ru) * | 2012-01-18 | 2016-02-10 | Кэнон Кабусики Кайся | Твердотельный датчик изображения и камера |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5314914B2 (ja) * | 2008-04-04 | 2013-10-16 | キヤノン株式会社 | 光電変換装置、撮像システム、設計方法、及び光電変換装置の製造方法 |
| WO2009144645A1 (en) * | 2008-05-27 | 2009-12-03 | Nxp B.V. | Light sensor device and manufacturing method |
| CN101604700B (zh) | 2008-06-13 | 2012-12-12 | 台湾积体电路制造股份有限公司 | 图像检测元件及其形成方法 |
| KR101647779B1 (ko) * | 2009-09-09 | 2016-08-11 | 삼성전자 주식회사 | 이미지 센서, 그 제조 방법, 및 상기 이미지 센서를 포함하는 장치 |
| JP2013070030A (ja) * | 2011-09-06 | 2013-04-18 | Sony Corp | 撮像素子、電子機器、並びに、情報処理装置 |
| JP2013077678A (ja) * | 2011-09-30 | 2013-04-25 | Sony Corp | 撮像素子、電子機器、並びに、製造方法 |
| JP2013098503A (ja) * | 2011-11-07 | 2013-05-20 | Toshiba Corp | 固体撮像素子 |
| JP5845856B2 (ja) * | 2011-11-30 | 2016-01-20 | ソニー株式会社 | 固体撮像素子およびその製造方法、並びに電子機器 |
| JP5542247B2 (ja) * | 2012-03-30 | 2014-07-09 | 富士フイルム株式会社 | 撮像素子及び撮像装置 |
| JP2014022649A (ja) * | 2012-07-20 | 2014-02-03 | Nikon Corp | 固体撮像素子、撮像装置、及び電子機器 |
| JP6053382B2 (ja) | 2012-08-07 | 2016-12-27 | キヤノン株式会社 | 撮像装置、撮像システム、および撮像装置の製造方法。 |
| JP6045250B2 (ja) * | 2012-08-10 | 2016-12-14 | オリンパス株式会社 | 固体撮像装置および撮像装置 |
| CN102881700B (zh) * | 2012-09-18 | 2017-06-23 | 上海集成电路研发中心有限公司 | 一种cmos图像传感器及其制造方法 |
| EP2910009A4 (en) * | 2012-10-17 | 2016-07-27 | Gelsight Inc | THREE DIMENSIONAL DIGITAL PRINTING AND VISUALIZATION OF OBJECTS |
| US10203411B2 (en) * | 2012-11-02 | 2019-02-12 | Maxim Integrated Products, Inc. | System and method for reducing ambient light sensitivity of infrared (IR) detectors |
| CN103022068B (zh) * | 2012-12-24 | 2017-04-19 | 上海集成电路研发中心有限公司 | 一种cmos图像传感器及其制造方法 |
| US8907385B2 (en) * | 2012-12-27 | 2014-12-09 | Taiwan Semiconductor Manufacturing Company, Ltd. | Surface treatment for BSI image sensors |
| JP2014175623A (ja) * | 2013-03-12 | 2014-09-22 | Toshiba Corp | 固体撮像装置及びその製造方法 |
| DE102013104968B4 (de) * | 2013-05-14 | 2020-12-31 | ams Sensors Germany GmbH | Sensoranordnung mit einem siliziumbasierten optischen Sensor und einem Substrat für funktionelle Schichtsysteme |
| JP6130221B2 (ja) * | 2013-05-24 | 2017-05-17 | ソニー株式会社 | 固体撮像装置、および電子機器 |
| JP2015037120A (ja) * | 2013-08-13 | 2015-02-23 | 株式会社東芝 | 固体撮像装置 |
| US9859326B2 (en) * | 2014-01-24 | 2018-01-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor devices, image sensors, and methods of manufacture thereof |
| US9767516B1 (en) * | 2014-05-20 | 2017-09-19 | State Farm Mutual Automobile Insurance Company | Driver feedback alerts based upon monitoring use of autonomous vehicle |
| JP6444066B2 (ja) * | 2014-06-02 | 2018-12-26 | キヤノン株式会社 | 光電変換装置および撮像システム |
| JP2016096254A (ja) * | 2014-11-14 | 2016-05-26 | キヤノン株式会社 | 固体撮像装置 |
| JP2016127264A (ja) | 2014-12-26 | 2016-07-11 | ソニー株式会社 | 固体撮像素子およびその製造方法、並びに電子機器 |
| JP6539123B2 (ja) * | 2015-06-18 | 2019-07-03 | キヤノン株式会社 | 固体撮像装置及びその製造方法ならびにカメラ |
| KR20180107145A (ko) * | 2016-01-29 | 2018-10-01 | 타워재즈 파나소닉 세미컨덕터 컴퍼니 리미티드 | 고체 촬상 장치 |
| JP6744748B2 (ja) * | 2016-04-06 | 2020-08-19 | キヤノン株式会社 | 固体撮像装置及びその製造方法 |
| KR102632442B1 (ko) * | 2018-05-09 | 2024-01-31 | 삼성전자주식회사 | 이미지 센서 및 전자 장치 |
| JP2020113573A (ja) * | 2019-01-08 | 2020-07-27 | キヤノン株式会社 | 光電変換装置 |
| TW202445852A (zh) * | 2019-06-26 | 2024-11-16 | 日商索尼半導體解決方案公司 | 半導體裝置及其製造方法 |
| US11698296B2 (en) * | 2019-09-25 | 2023-07-11 | Stmicroelectronics (Crolles 2) Sas | Light sensor using pixel optical diffraction gratings having different pitches |
| CN114008782A (zh) | 2019-09-30 | 2022-02-01 | Oppo广东移动通信有限公司 | 图像传感器、摄像头组件及移动终端 |
| CN110649057B (zh) * | 2019-09-30 | 2021-03-05 | Oppo广东移动通信有限公司 | 图像传感器、摄像头组件及移动终端 |
| CN114041208A (zh) | 2019-09-30 | 2022-02-11 | Oppo广东移动通信有限公司 | 图像传感器、摄像头组件及移动终端 |
| US11398512B2 (en) * | 2019-12-19 | 2022-07-26 | Taiwan Semiconductor Manufacturing Company, Ltd. | Photo-sensing device and manufacturing method thereof |
| CN111430567A (zh) * | 2020-03-31 | 2020-07-17 | 武汉华星光电半导体显示技术有限公司 | 一种显示面板及其制备方法 |
| EP4179369A1 (en) | 2020-07-10 | 2023-05-17 | Acacia Communications, Inc. | Optical waveguide passivation for moisture protection |
| CN116134619A (zh) * | 2020-07-30 | 2023-05-16 | 松下知识产权经营株式会社 | 光检测器、固体摄像元件、以及光检测器的制造方法 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6468826B1 (en) * | 1998-06-24 | 2002-10-22 | Nec Corporation | Solid state image sensor using an intermediate refractive index antireflection film and method for fabricating the same |
| JP2007012676A (ja) * | 2005-06-28 | 2007-01-18 | Fujifilm Holdings Corp | 固体撮像素子の製造方法および固体撮像素子 |
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| JP2757624B2 (ja) * | 1991-10-21 | 1998-05-25 | 日本電気株式会社 | 赤外線固体撮像素子及びその製造方法 |
| JPH08293462A (ja) * | 1995-02-21 | 1996-11-05 | Seiko Epson Corp | 半導体装置の製造方法 |
| JP3824469B2 (ja) | 2000-04-03 | 2006-09-20 | シャープ株式会社 | 固体撮像装置、及びその製造方法 |
| JP3959734B2 (ja) * | 2001-12-28 | 2007-08-15 | ソニー株式会社 | 固体撮像素子およびその製造方法 |
| JP4165077B2 (ja) | 2002-01-28 | 2008-10-15 | ソニー株式会社 | 半導体撮像装置 |
| JP2003249632A (ja) | 2002-02-22 | 2003-09-05 | Sony Corp | 固体撮像素子およびその製造方法 |
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| JP4120543B2 (ja) * | 2002-12-25 | 2008-07-16 | ソニー株式会社 | 固体撮像素子およびその製造方法 |
| JP4123060B2 (ja) | 2003-06-11 | 2008-07-23 | ソニー株式会社 | 固体撮像素子及びその製造方法 |
| JP2006049825A (ja) | 2004-07-08 | 2006-02-16 | Matsushita Electric Ind Co Ltd | 固体撮像素子およびその製造方法 |
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| JP5235565B2 (ja) | 2008-08-27 | 2013-07-10 | キヤノン株式会社 | 撮像センサ及び撮像装置 |
| JP2010123745A (ja) | 2008-11-19 | 2010-06-03 | Sony Corp | 固体撮像装置、カメラ |
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-
2011
- 2011-02-09 JP JP2011026532A patent/JP5595298B2/ja not_active Expired - Fee Related
- 2011-03-21 US US13/052,237 patent/US8525907B2/en not_active Expired - Fee Related
- 2011-03-22 EP EP11159133.5A patent/EP2375448B1/en not_active Not-in-force
- 2011-03-29 KR KR1020110028185A patent/KR101358587B1/ko not_active Expired - Fee Related
- 2011-03-31 CN CN201110079810.7A patent/CN102214668B/zh active Active
- 2011-04-05 RU RU2011113183/28A patent/RU2466478C1/ru not_active IP Right Cessation
-
2013
- 2013-07-26 US US13/951,674 patent/US9054243B2/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6468826B1 (en) * | 1998-06-24 | 2002-10-22 | Nec Corporation | Solid state image sensor using an intermediate refractive index antireflection film and method for fabricating the same |
| JP2007012676A (ja) * | 2005-06-28 | 2007-01-18 | Fujifilm Holdings Corp | 固体撮像素子の製造方法および固体撮像素子 |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| RU2574310C1 (ru) * | 2012-01-18 | 2016-02-10 | Кэнон Кабусики Кайся | Твердотельный датчик изображения и камера |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102214668B (zh) | 2014-12-10 |
| EP2375448A3 (en) | 2012-08-29 |
| KR101358587B1 (ko) | 2014-02-04 |
| US20110242350A1 (en) | 2011-10-06 |
| JP2011233862A (ja) | 2011-11-17 |
| EP2375448B1 (en) | 2015-08-12 |
| EP2375448A2 (en) | 2011-10-12 |
| CN102214668A (zh) | 2011-10-12 |
| US8525907B2 (en) | 2013-09-03 |
| US9054243B2 (en) | 2015-06-09 |
| US20130307109A1 (en) | 2013-11-21 |
| RU2011113183A (ru) | 2012-10-10 |
| JP5595298B2 (ja) | 2014-09-24 |
| KR20110112206A (ko) | 2011-10-12 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | The patent is invalid due to non-payment of fees |
Effective date: 20210406 |