KR101358587B1 - 고체 이미지 센서 및 촬상 시스템 - Google Patents

고체 이미지 센서 및 촬상 시스템 Download PDF

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Publication number
KR101358587B1
KR101358587B1 KR1020110028185A KR20110028185A KR101358587B1 KR 101358587 B1 KR101358587 B1 KR 101358587B1 KR 1020110028185 A KR1020110028185 A KR 1020110028185A KR 20110028185 A KR20110028185 A KR 20110028185A KR 101358587 B1 KR101358587 B1 KR 101358587B1
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South Korea
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insulating film
image sensor
state image
refractive index
solid state
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KR1020110028185A
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Korean (ko)
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KR20110112206A (ko
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다다시 사와야마
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캐논 가부시끼가이샤
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/40—Optical elements or arrangements
    • H10F77/413—Optical elements or arrangements directly associated or integrated with the devices, e.g. back reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8067—Reflectors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8053—Colour filters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors

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  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Color Television Image Signal Generators (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
KR1020110028185A 2010-04-06 2011-03-29 고체 이미지 센서 및 촬상 시스템 Expired - Fee Related KR101358587B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JPJP-P-2010-088192 2010-04-06
JP2010088192 2010-04-06
JP2011026532A JP5595298B2 (ja) 2010-04-06 2011-02-09 固体撮像装置及び撮像システム
JPJP-P-2011-026532 2011-02-09

Publications (2)

Publication Number Publication Date
KR20110112206A KR20110112206A (ko) 2011-10-12
KR101358587B1 true KR101358587B1 (ko) 2014-02-04

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US (2) US8525907B2 (enExample)
EP (1) EP2375448B1 (enExample)
JP (1) JP5595298B2 (enExample)
KR (1) KR101358587B1 (enExample)
CN (1) CN102214668B (enExample)
RU (1) RU2466478C1 (enExample)

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KR101647779B1 (ko) * 2009-09-09 2016-08-11 삼성전자 주식회사 이미지 센서, 그 제조 방법, 및 상기 이미지 센서를 포함하는 장치
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JP2013077678A (ja) * 2011-09-30 2013-04-25 Sony Corp 撮像素子、電子機器、並びに、製造方法
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CN103022068B (zh) * 2012-12-24 2017-04-19 上海集成电路研发中心有限公司 一种cmos图像传感器及其制造方法
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JP2016127264A (ja) 2014-12-26 2016-07-11 ソニー株式会社 固体撮像素子およびその製造方法、並びに電子機器
JP6539123B2 (ja) * 2015-06-18 2019-07-03 キヤノン株式会社 固体撮像装置及びその製造方法ならびにカメラ
KR20180107145A (ko) * 2016-01-29 2018-10-01 타워재즈 파나소닉 세미컨덕터 컴퍼니 리미티드 고체 촬상 장치
JP6744748B2 (ja) * 2016-04-06 2020-08-19 キヤノン株式会社 固体撮像装置及びその製造方法
KR102632442B1 (ko) * 2018-05-09 2024-01-31 삼성전자주식회사 이미지 센서 및 전자 장치
JP2020113573A (ja) * 2019-01-08 2020-07-27 キヤノン株式会社 光電変換装置
TW202445852A (zh) * 2019-06-26 2024-11-16 日商索尼半導體解決方案公司 半導體裝置及其製造方法
US11698296B2 (en) * 2019-09-25 2023-07-11 Stmicroelectronics (Crolles 2) Sas Light sensor using pixel optical diffraction gratings having different pitches
CN114008782A (zh) 2019-09-30 2022-02-01 Oppo广东移动通信有限公司 图像传感器、摄像头组件及移动终端
CN110649057B (zh) * 2019-09-30 2021-03-05 Oppo广东移动通信有限公司 图像传感器、摄像头组件及移动终端
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CN111430567A (zh) * 2020-03-31 2020-07-17 武汉华星光电半导体显示技术有限公司 一种显示面板及其制备方法
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Also Published As

Publication number Publication date
CN102214668B (zh) 2014-12-10
EP2375448A3 (en) 2012-08-29
US20110242350A1 (en) 2011-10-06
RU2466478C1 (ru) 2012-11-10
JP2011233862A (ja) 2011-11-17
EP2375448B1 (en) 2015-08-12
EP2375448A2 (en) 2011-10-12
CN102214668A (zh) 2011-10-12
US8525907B2 (en) 2013-09-03
US9054243B2 (en) 2015-06-09
US20130307109A1 (en) 2013-11-21
RU2011113183A (ru) 2012-10-10
JP5595298B2 (ja) 2014-09-24
KR20110112206A (ko) 2011-10-12

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