CN114008782A - 图像传感器、摄像头组件及移动终端 - Google Patents
图像传感器、摄像头组件及移动终端 Download PDFInfo
- Publication number
- CN114008782A CN114008782A CN201980097816.1A CN201980097816A CN114008782A CN 114008782 A CN114008782 A CN 114008782A CN 201980097816 A CN201980097816 A CN 201980097816A CN 114008782 A CN114008782 A CN 114008782A
- Authority
- CN
- China
- Prior art keywords
- color
- pixel
- image
- pixels
- panchromatic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000006243 chemical reaction Methods 0.000 claims abstract description 105
- 230000004044 response Effects 0.000 claims abstract description 22
- 230000003595 spectral effect Effects 0.000 claims abstract description 11
- 238000012545 processing Methods 0.000 claims description 162
- 238000002955 isolation Methods 0.000 claims description 45
- 239000003086 colorant Substances 0.000 claims description 25
- 125000006850 spacer group Chemical group 0.000 claims description 22
- 238000009792 diffusion process Methods 0.000 claims description 18
- 238000012546 transfer Methods 0.000 claims description 18
- 239000000758 substrate Substances 0.000 claims description 17
- 238000003384 imaging method Methods 0.000 claims description 16
- 238000012937 correction Methods 0.000 claims description 14
- 108010001267 Protein Subunits Proteins 0.000 claims description 13
- 238000000926 separation method Methods 0.000 claims description 12
- 239000003990 capacitor Substances 0.000 claims description 9
- 230000004888 barrier function Effects 0.000 claims description 7
- 230000007423 decrease Effects 0.000 claims description 6
- 238000000605 extraction Methods 0.000 claims 1
- 239000010410 layer Substances 0.000 description 187
- 238000010586 diagram Methods 0.000 description 63
- 238000000034 method Methods 0.000 description 45
- 230000000875 corresponding effect Effects 0.000 description 41
- 230000008569 process Effects 0.000 description 24
- 230000003287 optical effect Effects 0.000 description 17
- 230000035945 sensitivity Effects 0.000 description 13
- 230000006870 function Effects 0.000 description 12
- 230000036961 partial effect Effects 0.000 description 11
- 235000019557 luminance Nutrition 0.000 description 10
- 230000001276 controlling effect Effects 0.000 description 9
- 238000013461 design Methods 0.000 description 9
- 239000003973 paint Substances 0.000 description 8
- 230000003321 amplification Effects 0.000 description 7
- 230000000694 effects Effects 0.000 description 7
- 239000011229 interlayer Substances 0.000 description 7
- 238000003199 nucleic acid amplification method Methods 0.000 description 7
- 230000002829 reductive effect Effects 0.000 description 7
- 230000003247 decreasing effect Effects 0.000 description 6
- 229920006395 saturated elastomer Polymers 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 5
- 238000004364 calculation method Methods 0.000 description 4
- 230000000670 limiting effect Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000003672 processing method Methods 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000002457 bidirectional effect Effects 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000002596 correlated effect Effects 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 238000007499 fusion processing Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000002028 premature Effects 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 230000004304 visual acuity Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14621—Colour filter arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
- H01L27/14627—Microlenses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1463—Pixel isolation structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14645—Colour imagers
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
- H04N23/10—Cameras or camera modules comprising electronic image sensors; Control thereof for generating image signals from different wavelengths
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/10—Circuitry of solid-state image sensors [SSIS]; Control thereof for transforming different wavelengths into image signals
- H04N25/11—Arrangement of colour filter arrays [CFA]; Filter mosaics
- H04N25/13—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements
- H04N25/133—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements including elements passing panchromatic light, e.g. filters passing white light
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/50—Control of the SSIS exposure
- H04N25/53—Control of the integration time
- H04N25/533—Control of the integration time by using differing integration times for different sensor regions
- H04N25/534—Control of the integration time by using differing integration times for different sensor regions depending on the spectral component
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/50—Control of the SSIS exposure
- H04N25/57—Control of the dynamic range
- H04N25/58—Control of the dynamic range involving two or more exposures
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/50—Control of the SSIS exposure
- H04N25/57—Control of the dynamic range
- H04N25/58—Control of the dynamic range involving two or more exposures
- H04N25/581—Control of the dynamic range involving two or more exposures acquired simultaneously
- H04N25/585—Control of the dynamic range involving two or more exposures acquired simultaneously with pixels having different sensitivities within the sensor, e.g. fast or slow pixels or pixels having different sizes
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/50—Control of the SSIS exposure
- H04N25/57—Control of the dynamic range
- H04N25/59—Control of the dynamic range by controlling the amount of charge storable in the pixel, e.g. modification of the charge conversion ratio of the floating node capacitance
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
- H04N25/771—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising storage means other than floating diffusion
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
- H04N25/75—Circuitry for providing, modifying or processing image signals from the pixel array
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Color Television Image Signal Generators (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
一种图像传感器(10)、摄像头组件(40)及移动终端(90)。图像传感器(10)包括全色像素和彩色像素。彩色像素具有比全色像素更窄的光谱响应,彩色像素具有比全色像素更大的转化增益。
Description
PCT国内申请,说明书已公开。
Claims (55)
- PCT国内申请,权利要求书已公开。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/CN2019/109516 WO2021062661A1 (zh) | 2019-09-30 | 2019-09-30 | 图像传感器、摄像头组件及移动终端 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN114008782A true CN114008782A (zh) | 2022-02-01 |
Family
ID=75337619
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201980097816.1A Pending CN114008782A (zh) | 2019-09-30 | 2019-09-30 | 图像传感器、摄像头组件及移动终端 |
Country Status (4)
Country | Link |
---|---|
US (1) | US20220139981A1 (zh) |
EP (1) | EP3985729A4 (zh) |
CN (1) | CN114008782A (zh) |
WO (1) | WO2021062661A1 (zh) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110164895B (zh) * | 2019-05-31 | 2021-06-01 | Oppo广东移动通信有限公司 | 互补金属氧化物图像传感器、图像处理方法及存储介质 |
CN114447006A (zh) * | 2020-10-30 | 2022-05-06 | 三星电子株式会社 | 包括分色透镜阵列的图像传感器和包括图像传感器的电子设备 |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3729353B2 (ja) * | 2003-06-18 | 2005-12-21 | 松下電器産業株式会社 | 固体撮像装置およびその製造方法 |
US8274715B2 (en) * | 2005-07-28 | 2012-09-25 | Omnivision Technologies, Inc. | Processing color and panchromatic pixels |
US7978240B2 (en) * | 2005-10-03 | 2011-07-12 | Konica Minolta Photo Imaging, Inc. | Enhancing image quality imaging unit and image sensor |
JP4187004B2 (ja) * | 2006-04-17 | 2008-11-26 | ソニー株式会社 | 撮像装置および撮像装置の露光制御方法 |
JP2009026808A (ja) * | 2007-07-17 | 2009-02-05 | Fujifilm Corp | 固体撮像装置 |
JP2009081169A (ja) * | 2007-09-25 | 2009-04-16 | Fujifilm Corp | 固体撮像素子 |
JP4618342B2 (ja) * | 2008-05-20 | 2011-01-26 | 日本テキサス・インスツルメンツ株式会社 | 固体撮像装置 |
US8045024B2 (en) * | 2009-04-15 | 2011-10-25 | Omnivision Technologies, Inc. | Producing full-color image with reduced motion blur |
JP5845856B2 (ja) * | 2011-11-30 | 2016-01-20 | ソニー株式会社 | 固体撮像素子およびその製造方法、並びに電子機器 |
US9293500B2 (en) * | 2013-03-01 | 2016-03-22 | Apple Inc. | Exposure control for image sensors |
US20160198131A1 (en) * | 2015-01-06 | 2016-07-07 | Samsung Electronics Co., Ltd. | Rgb/rwb sensor with independent integration time control for improvement of snr and color accuracy |
JP2017118191A (ja) * | 2015-12-21 | 2017-06-29 | ソニー株式会社 | 撮像素子及びその駆動方法、並びに撮像装置 |
CN109087926A (zh) * | 2018-08-10 | 2018-12-25 | 德淮半导体有限公司 | 图像传感器、电子装置及其制造方法 |
CN109003995A (zh) * | 2018-08-10 | 2018-12-14 | 德淮半导体有限公司 | 图像传感器、电子装置及其制造方法 |
CN110649057B (zh) * | 2019-09-30 | 2021-03-05 | Oppo广东移动通信有限公司 | 图像传感器、摄像头组件及移动终端 |
CN110649056B (zh) * | 2019-09-30 | 2022-02-18 | Oppo广东移动通信有限公司 | 图像传感器、摄像头组件及移动终端 |
-
2019
- 2019-09-30 CN CN201980097816.1A patent/CN114008782A/zh active Pending
- 2019-09-30 EP EP19948034.4A patent/EP3985729A4/en active Pending
- 2019-09-30 WO PCT/CN2019/109516 patent/WO2021062661A1/zh unknown
-
2022
- 2022-01-13 US US17/575,298 patent/US20220139981A1/en active Pending
Also Published As
Publication number | Publication date |
---|---|
WO2021062661A1 (zh) | 2021-04-08 |
EP3985729A1 (en) | 2022-04-20 |
EP3985729A4 (en) | 2022-10-05 |
US20220139981A1 (en) | 2022-05-05 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN110649056B (zh) | 图像传感器、摄像头组件及移动终端 | |
CN110649057B (zh) | 图像传感器、摄像头组件及移动终端 | |
CN111314592B (zh) | 图像处理方法、摄像头组件及移动终端 | |
CN110740272B (zh) | 图像采集方法、摄像头组件及移动终端 | |
CN111385543B (zh) | 图像传感器、摄像头组件、移动终端及图像获取方法 | |
CN111050041B (zh) | 图像传感器、控制方法、摄像头组件及移动终端 | |
CN110784634B (zh) | 图像传感器、控制方法、摄像头组件及移动终端 | |
US20220336508A1 (en) | Image sensor, camera assembly and mobile terminal | |
CN113973184A (zh) | 图像传感器、摄像头组件、移动终端 | |
WO2021159944A1 (zh) | 图像传感器、摄像头组件及移动终端 | |
US20220139981A1 (en) | Image sensor, camera assembly, and mobile terminal | |
CN111741221A (zh) | 图像获取方法、摄像头组件及移动终端 | |
CN112738493B (zh) | 图像处理方法、图像处理装置、电子设备及可读存储介质 | |
US20220139974A1 (en) | Image sensor, camera assembly, and mobile terminal | |
US20220150450A1 (en) | Image capturing method, camera assembly, and mobile terminal | |
CN111031297B (zh) | 图像传感器、控制方法、摄像头组件和移动终端 | |
US20220279108A1 (en) | Image sensor and mobile terminal | |
CN112235485B (zh) | 图像传感器、图像处理方法、成像装置、终端及可读存储介质 | |
CN114424517B (zh) | 图像传感器、控制方法、摄像头组件及移动终端 | |
WO2021046690A1 (zh) | 图像传感器、摄像头模组、移动终端及图像采集方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination |