JP5580803B2 - 独立(Al、Ga、In)N物品を形成する方法 - Google Patents
独立(Al、Ga、In)N物品を形成する方法 Download PDFInfo
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- 229910052733 gallium Inorganic materials 0.000 title claims description 286
- 229910052782 aluminium Inorganic materials 0.000 title claims description 283
- 229910052738 indium Inorganic materials 0.000 title claims description 280
- 238000000034 method Methods 0.000 title claims description 106
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- 229910004298 SiO 2 Inorganic materials 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 7
- 229910052751 metal Inorganic materials 0.000 claims description 7
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- 238000005229 chemical vapour deposition Methods 0.000 claims description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 4
- 239000002019 doping agent Substances 0.000 claims description 4
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 239000005388 borosilicate glass Substances 0.000 claims description 2
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- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
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- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
-
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- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
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- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/18—Epitaxial-layer growth characterised by the substrate
-
- C—CHEMISTRY; METALLURGY
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- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
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- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
- C30B29/406—Gallium nitride
-
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- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/0242—Crystalline insulating materials
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- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
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Description
本発明は、一般に、独立物品を形成するための方法、およびこれによって形成された独立物品に関する。特に、本発明は、独立(Al、Ga、In)N物品、および(Al、Ga、In)Nが成長させられていたベース材料またはベース層から(Al、Ga、In)Nを界面分離して、マイクロエレクトロニクまたはオプトエレクトロニクスデバイスの製作に適切な独立体としての分離された(Al、Ga、In)N材料を生じる独立(Al、Ga、In)N物品を形成する方法に関する。
米国特許第5,679,152号は、エピタキシャルに適合できる犠牲型板上に独立(Al、Ga、In)N単結晶物品を製造することについて記述しており、この方法では、単結晶(Al、Ga、In)Nの層が型板上に堆積され、かつ犠牲型板が成長温度の近くで除去されて独立(Al、Ga、In)Nを残す。
本発明は、広範囲の観点で、独立物品用の基板上に構造材料を堆積して、基板と材料との間の界面を含む材料/基板複合物品を形成するステップと、複合材料/基板物品を界面修正して基板を材料から分割し、独立物品を生じるステップと、を含む独立物品を形成する方法に関する。
エピタキシャルに適合できる犠牲型板を設けるステップと、
単結晶(Al、Ga、In)N材料を型板上に堆積して、犠牲型板と(Al、Ga、In)N材料との間の界面を含む複合犠牲型板/(Al、Ga、In)N物品を形成するステップと、
複合犠牲型板/(Al、Ga、In)N物品を界面修正して、犠牲型板を(Al、Ga、In)N材料から分割し、独立(Al、Ga、In)N物品を生じるステップと、
を含むステップによって独立(Al、Ga、In)N物品を形成する方法に関する。
される環境に関してインシチューまたはエクスシチュー実施し得る。
以下の米国特許および米国特許出願の開示は、全体が参考として本明細書に組み込まれて
いる。
ミヒャエルA.ティッシュラー(Michael A.Tischler)らの名前で1994年1月27日に出願され、現在、米国特許第5,679,152号として交付されている米国特許出願第08/188,469号、
ミヒャエルA.ティッシュラー(Michael A.Tischler)らの名前で1997年10月21日に出願された米国特許出願第08/955,168号、
ロバートP.ボード(Robert P.Vaudo)らの名前で1997年12月3日に出願され、現在、米国特許第6,156,581号として交付されている米国特許出願第08/984,473号、
ロバートP.ボード(Robert P.Vaudo)らの名前で1998年10月26日に出願された米国特許出願第09/179,049号、
ロバートP.ボード(Robert P.Vaudo)らの名前で2000年3月13日に出願された米国特許出願第09/524,062号、
ジェフリーS.フリン(Jeffrey S.Flynn)らの名前で2000年6月28日に出願された米国特許出願第09/605,195号、
ミヒャエルA.ティッシュラー(Michael A.Tischler)らの名前で2001年8月14日に出願された米国特許出願第09/929,789号、
ミヒャエルA.ティッシュラー(Michael A.Tischler)らの名前で2001年8月21日に出願された米国特許出願第09/933,943号。
(ii)それぞれの型板および(Al、Ga、In)N材料の界面接着を少なくとも弱化するように、界面材料の化学的および/または物理的変化を誘発する程度に十分に高いレーザパワー密度、
(iii)材料内への(界面を越えて)より深い熱拡散を低減し、吸収されたレーザエネルギから生じる衝撃波を低減し、また生成物(Al、Ga、In)N材料内の物理的および/または化学的変化の程度を一般に小さくし、これによって単結晶(Al、Ga、In)N生成物材料に対する損傷を最小にするために適用される照射線の短パルス、
(iv)適用される照射線のパルス化、および複合犠牲型板/(Al、Ga、In)N物品上に適用される照射線ビームの任意選択的スキャンに関連して、結晶領域を分割するために有効なパルスレートを利用すること、
(v)大部分のビームプロファイルが機能するが(ガウス、トップハット等)、高い(ビームセンタ)から低い(ビームエッジ)エネルギへの均一で円筒状に対称的かつ漸次の遷移が望ましい。
に、任意の適切な温度で行うことができる。
サファイア上でGaNをHVPE成長させ、またHVPE成長温度の近くで成長室内で複合物GaN/サファイア物品をレーザ分割することによって、厚さ400μmの独立GaNを生成した。
実施例2
本実施例では、サファイア上でGaNをHVPE成長させ、また高温でレーザ分割することによって40mmの直径の独立GaNウェハを生成した。
(1)(0001)サファイアウェハの裏面を300nmのSiO2でスパッタ被覆した。ウェハのエッジは、同時にある被覆を受容したが、ウェハの正面(成長面)のSiO2の堆積が妨げられた。
(2)スパッタ被覆されたこの犠牲(0001)サファイアウェハを水平のHVPE反応器の成長室内に装入した。
(3)サファイアを約1000℃に加熱し、また溶融したGa上方にHClを流すことによって生成されたGaClを用いて、プロセスにおいて35のNH3/HCl比でサファイアの表面をGaClガスおよびNH3ガスに180分間露出した。
(4)GaCl流を終了した。
(5)NH3流を終了した。
(6)GaN/サファイア複合物を成長室から取り除いた。
(7)成長室から取り除いた後、GaN/サファイア複合物は数日間室内周囲温度に維持した。
(8)サファイア面にまたGaN−サファイア複合物のエッジに配置したGaN堆積物を、数時間のSiO2のHFエッチングと物理的研削とを組み合わせて除去した。
(9)GaN表面をSiC粒子のベッド内に配置して、GaN/サファイア複合物を真空室内に装入した。
(10)粗い表面(マット仕上げ部)をGaN/サファイアに最も密接に配置してレーザビームを均質にし、1cmの厚さの石英ディスクをGaN/サファイア複合物上に配置した。
(11)真空室を真空引きし、N2ガスで充填した。
(12)GaN/サファイア複合物を約900℃に加熱した。
(13)レーザパワーメータとウェーブプレート偏光子との組み合わせを用いて、Nd:YAGレーザの第3高調波からの照射線を100mJに調整し、次に、レーザ照射線を石英窓、石英ディスク、およびサファイアとGaN/サファイアとの界面を通して真空室に方向付けた。
(14)レーザビームを電気光学的に変調して、一方のエッジで開始してウェハにわたってビームをラスタし、ウェハ領域全体を露出するまでGaNの{112bar0}面に対し平行にスキャンした。
(15)GaNおよびサファイアを室内周囲温度に冷却した。
(16)GaNおよびサファイアを、希釈HF溶液に30分間配置し、次に、独立GaNをHFから除去して、脱イオン水ですすぎ洗いした。
(17)一方の平坦面が{112bar0}方向をマークするようにして、研磨粒子を用いて、GaN材料を40mmの直径の丸いウェハに寸法決めした。
(18)ウェハを均一の厚さにラップし、9μmと3μmのダイヤモンドグリットを用いて機械研磨した。
(19)ウェハを化学的・機械的に研磨して、エピタキシャル態勢のGaNウェハを生成した。
Claims (14)
- 単結晶(Al、Ga、In)N材料をエピタキシャルに適合できる犠牲型板上に成長温度で堆積して、前記犠牲型板と前記(Al、Ga、In)N材料との間の界面を含む複合犠牲型板/(Al、Ga、In)N物品を形成した後に行う、独立(Al、Ga、In)N物品を形成する方法であって、
前記犠牲型板から前記単結晶(Al、Ga、In)N材料を部分的に分割した後に、前記犠牲型板/(Al、Ga、In)N物品を前記成長温度未満の温度に冷却して、非分割材料を破断し、かつ前記(Al、Ga、In)N材料からの前記犠牲型板の分割を完了して独立(Al、Ga、In)N物品を形成することを含む前記方法。 - ハイドライド気相成長法(HVPE)、有機金属気相成長法(MOVPE)、化学気相堆積法(CVD)及び分子ビーム成長法(MBE)からなる群から選択されるプロセスによって、単結晶(Al、Ga、In)N材料が前記型板上に堆積する、請求項1に記載の方法。
- 前記部分的に分割することが、単結晶(Al、Ga、In)N材料を前記型板上に堆積した300℃以内の温度で実施される、請求項1又は2に記載の方法。
- 前記複合犠牲型板/(Al、Ga、In)N物品は、その裏面が、ホウケイ酸塩ガラス、SiO2及びSi3N4からなる群から選択される材料でシールされる、請求項1〜3のいずれか一項に記載の方法。
- 前記犠牲型板の前記(Al、Ga、In)N材料からの分割が、分解窒素またはHClが導入されるプロセス環境で実施される、請求項1に記載の方法。
- 前記独立(Al、Ga、In)N物品が約1〜約1000μmの範囲の厚さを有する、請求項1〜5のいずれか一項に記載の方法。
- 約100〜約1000μmの厚さを有するウェハ内に前記独立(Al、Ga、In)N物品を形成するステップをさらに含む、請求項1〜5のいずれか一項に記載の方法。
- 前記複合犠牲型板/(Al、Ga、In)N物品が、前記犠牲型板と前記(Al、Ga、In)N材料との間に少なくとも1つの中間層を収容する、請求項1〜7のいずれか一項に記載の方法。
- 部分的に分割する前記ステップがレーザエネルギを前記中間層に衝突させるステップを含み、前記レーザエネルギが前記(Al、Ga、In)N材料のバンドギャップよりも小さな光子エネルギを有する、請求項8に記載の方法。
- 前記中間層がドーパントでドープされる、請求項8又は9に記載の方法。
- 前記中間層が、前記型板上に堆積された前記単結晶(Al、Ga、In)N材料よりも低いバンドギャップを有する(Al、Ga、In)N材料を含む、請求項8〜10のいずれか一項に記載の方法。
- 前記犠牲型板がその裏面に粗い石英またはマット仕上げ部を有する、請求項11に記載の方法。
- 前記犠牲型板が、前記複合犠牲型板/(Al、Ga、In)N物品内の裏面型板を構成し、レーザエネルギを前記界面に衝突させる前記ステップが、前記裏面型板を通したレーザエネルギの透過により実施される、請求項8〜11のいずれか一項に記載の方法。
- 前記独立(Al、Ga、In)N物品上に追加の(Al、Ga、In)Nを成長させるステップをさらに含む、請求項1〜13のいずれか一項に記載の方法。
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EP2287368A3 (en) | 2013-10-09 |
CN101353813A (zh) | 2009-01-28 |
CN1551824A (zh) | 2004-12-01 |
EP2248931B1 (en) | 2015-02-25 |
US6958093B2 (en) | 2005-10-25 |
KR20090082515A (ko) | 2009-07-30 |
JP2012051792A (ja) | 2012-03-15 |
EP2248931A3 (en) | 2011-10-12 |
CN100420569C (zh) | 2008-09-24 |
EP2287368B1 (en) | 2018-04-18 |
US20020068201A1 (en) | 2002-06-06 |
CN102383193A (zh) | 2012-03-21 |
WO2003020497A1 (en) | 2003-03-13 |
KR100921409B1 (ko) | 2009-10-14 |
JP4958833B2 (ja) | 2012-06-20 |
EP1423259A4 (en) | 2007-06-27 |
TW593797B (en) | 2004-06-21 |
CN102383193B (zh) | 2014-11-26 |
KR20040045431A (ko) | 2004-06-01 |
JP2005502193A (ja) | 2005-01-20 |
KR100979456B1 (ko) | 2010-09-02 |
EP1423259B1 (en) | 2010-08-04 |
JP4401168B2 (ja) | 2010-01-20 |
MY130719A (en) | 2007-07-31 |
EP2287368A2 (en) | 2011-02-23 |
EP2248931A2 (en) | 2010-11-10 |
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