CN101555627B - 一种氮化镓基外延膜的激光剥离方法 - Google Patents
一种氮化镓基外延膜的激光剥离方法 Download PDFInfo
- Publication number
- CN101555627B CN101555627B CN2009100312661A CN200910031266A CN101555627B CN 101555627 B CN101555627 B CN 101555627B CN 2009100312661 A CN2009100312661 A CN 2009100312661A CN 200910031266 A CN200910031266 A CN 200910031266A CN 101555627 B CN101555627 B CN 101555627B
- Authority
- CN
- China
- Prior art keywords
- gallium nitride
- epitaxial film
- based epitaxial
- sapphire substrate
- laser
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title claims abstract description 86
- 229910002601 GaN Inorganic materials 0.000 title claims abstract description 85
- 238000000034 method Methods 0.000 title claims abstract description 28
- 239000000758 substrate Substances 0.000 claims abstract description 65
- 229910052594 sapphire Inorganic materials 0.000 claims abstract description 52
- 239000010980 sapphire Substances 0.000 claims abstract description 52
- 239000000463 material Substances 0.000 claims abstract description 15
- 229910052751 metal Inorganic materials 0.000 claims abstract description 8
- 239000002184 metal Substances 0.000 claims abstract description 8
- 230000001681 protective effect Effects 0.000 claims description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 11
- CHPZKNULDCNCBW-UHFFFAOYSA-N gallium nitrate Chemical compound [Ga+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O CHPZKNULDCNCBW-UHFFFAOYSA-N 0.000 claims description 10
- 238000007493 shaping process Methods 0.000 claims description 9
- 239000011521 glass Substances 0.000 claims description 7
- 241001270131 Agaricus moelleri Species 0.000 claims description 6
- 238000009826 distribution Methods 0.000 claims description 6
- 239000003822 epoxy resin Substances 0.000 claims description 6
- 239000003292 glue Substances 0.000 claims description 6
- 229920000647 polyepoxide Polymers 0.000 claims description 6
- 229940044658 gallium nitrate Drugs 0.000 claims description 5
- 239000000741 silica gel Substances 0.000 claims description 5
- 229910002027 silica gel Inorganic materials 0.000 claims description 5
- 239000004642 Polyimide Substances 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000012188 paraffin wax Substances 0.000 claims description 3
- 229920001721 polyimide Polymers 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- 235000012239 silicon dioxide Nutrition 0.000 claims description 3
- 238000009413 insulation Methods 0.000 claims description 2
- 230000035939 shock Effects 0.000 abstract description 9
- 229910052733 gallium Inorganic materials 0.000 abstract description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 abstract 2
- 238000005516 engineering process Methods 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 208000037656 Respiratory Sounds Diseases 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000011049 filling Methods 0.000 description 3
- 238000013517 stratification Methods 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 2
- 230000002265 prevention Effects 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000006664 bond formation reaction Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000001534 heteroepitaxy Methods 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
Images
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Semiconductor Lasers (AREA)
Abstract
Description
Claims (5)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2009100312661A CN101555627B (zh) | 2009-04-30 | 2009-04-30 | 一种氮化镓基外延膜的激光剥离方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2009100312661A CN101555627B (zh) | 2009-04-30 | 2009-04-30 | 一种氮化镓基外延膜的激光剥离方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101555627A CN101555627A (zh) | 2009-10-14 |
CN101555627B true CN101555627B (zh) | 2012-01-25 |
Family
ID=41173900
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2009100312661A Expired - Fee Related CN101555627B (zh) | 2009-04-30 | 2009-04-30 | 一种氮化镓基外延膜的激光剥离方法 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN101555627B (zh) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5996250B2 (ja) * | 2012-04-24 | 2016-09-21 | 株式会社ディスコ | リフトオフ方法 |
JP5996254B2 (ja) * | 2012-04-26 | 2016-09-21 | 株式会社ディスコ | リフトオフ方法 |
CN105590841A (zh) * | 2014-11-14 | 2016-05-18 | 东莞市中镓半导体科技有限公司 | 一种制备氮化镓自支撑衬底的无碎裂纹激光剥离方法 |
CN104979438A (zh) * | 2015-06-19 | 2015-10-14 | 佛山市国星半导体技术有限公司 | 剥离发光组件衬底的方法和装置 |
CN107622977B (zh) * | 2017-08-31 | 2020-05-22 | 西安交通大学 | 一种渐进式微米级蓝宝石衬底激光剥离工艺 |
CN109585615B (zh) * | 2018-12-04 | 2020-07-24 | 西安赛富乐斯半导体科技有限公司 | 将氮化镓外延层从衬底上剥离的方法 |
CN111326464A (zh) * | 2018-12-14 | 2020-06-23 | 昆山工研院新型平板显示技术中心有限公司 | 利用激光剥离微器件的方法 |
CN111326409B (zh) * | 2018-12-14 | 2023-01-31 | 云谷(固安)科技有限公司 | 激光剥离方法和蓝宝石衬底上发光二极管器件外延结构 |
CN113097245A (zh) * | 2021-03-11 | 2021-07-09 | 长江先进存储产业创新中心有限责任公司 | 一种半导体芯片的形成方法及半导体芯片 |
CN113611779B (zh) * | 2021-06-28 | 2023-09-08 | 厦门士兰明镓化合物半导体有限公司 | 垂直结构的深紫外led芯片、制造方法与外延结构 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1779900A (zh) * | 2004-11-23 | 2006-05-31 | 北京大学 | GaN基外延层的大面积、低功率激光剥离方法 |
CN1797795A (zh) * | 2004-12-27 | 2006-07-05 | 北京大学 | 带有二维自然散射出光面的led芯片的制备方法 |
JP2007149988A (ja) * | 2005-11-28 | 2007-06-14 | Tokyo Institute Of Technology | レーザーリフトオフ法およびレーザーリフトオフ装置 |
CN101241964A (zh) * | 2007-12-24 | 2008-08-13 | 厦门三安电子有限公司 | 一种应用合成分隔法激光剥离GaN基发光器件及其制造方法 |
CN101353813A (zh) * | 2001-09-05 | 2009-01-28 | 克利公司 | 自支撑(Al,Ga,In)N以及形成自支撑(Al,Ga,In)N的分离方法 |
-
2009
- 2009-04-30 CN CN2009100312661A patent/CN101555627B/zh not_active Expired - Fee Related
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101353813A (zh) * | 2001-09-05 | 2009-01-28 | 克利公司 | 自支撑(Al,Ga,In)N以及形成自支撑(Al,Ga,In)N的分离方法 |
CN1779900A (zh) * | 2004-11-23 | 2006-05-31 | 北京大学 | GaN基外延层的大面积、低功率激光剥离方法 |
CN1797795A (zh) * | 2004-12-27 | 2006-07-05 | 北京大学 | 带有二维自然散射出光面的led芯片的制备方法 |
JP2007149988A (ja) * | 2005-11-28 | 2007-06-14 | Tokyo Institute Of Technology | レーザーリフトオフ法およびレーザーリフトオフ装置 |
CN101241964A (zh) * | 2007-12-24 | 2008-08-13 | 厦门三安电子有限公司 | 一种应用合成分隔法激光剥离GaN基发光器件及其制造方法 |
Non-Patent Citations (2)
Title |
---|
Li Zilan等.Preparation of GaN-based cross-sectional TEM specimens by laser lift-off.《Micron》.2005,第36卷281–284. * |
Yongjian Sun等.33 μm free standing thick film vertical structure LED made by laser lift-off.《Phys.Status Solidi C》.2009,第6卷(第S2期),S623–S626. * |
Also Published As
Publication number | Publication date |
---|---|
CN101555627A (zh) | 2009-10-14 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN101555627B (zh) | 一种氮化镓基外延膜的激光剥离方法 | |
CN101660206B (zh) | 一种完整性GaN基薄膜的制备方法 | |
CN101465401B (zh) | 基于平面键合及暂时性基底转移技术的薄膜GaN LED制备方法 | |
CN100389503C (zh) | 分立晶粒垂直结构的led芯片制备方法 | |
CN1973375B (zh) | 使用激光束分离材料层的方法 | |
CN101485000B (zh) | 具有垂直拓扑的发光二极管及其制造方法 | |
CN104813447B (zh) | 分离基材和加工元器件的方法和装置 | |
CN107538136A (zh) | 一种利用激光切割蓝宝石衬底led芯片的方法 | |
CN105742417B (zh) | 一种垂直led芯片结构及其制备方法 | |
TW201123524A (en) | Method for making light emitting diode chip | |
JP5614738B2 (ja) | 基板加工方法 | |
CN105226143A (zh) | 一种GaAs基LED芯片的切割方法 | |
CN109301042B (zh) | 一种垂直结构led芯片及其制作方法 | |
CN104752571A (zh) | 一种晶圆级白光led芯片的切割方法 | |
JP5645000B2 (ja) | 基板加工方法 | |
CN102117769A (zh) | 发光二极管芯片的制备方法 | |
TW201330082A (zh) | 使用不連續雷射刻劃線之方法及結構 | |
CN105127605A (zh) | 一种蓝宝石衬底led芯片激光切割方法 | |
KR20100126525A (ko) | 고체 레이저를 이용하여 손상없이 GaN(질화갈륨)과 사파이어 기판을 박리하는 방법 | |
CN102779911A (zh) | 一种垂直结构氮化镓基发光元件的制作方法 | |
CN104393140B (zh) | 一种高反射率的垂直结构发光二级管芯片及其制备方法 | |
CN107579139B (zh) | 一种垂直结构半导体器件的制造方法 | |
CN101847675A (zh) | 垂直结构发光二极管芯片结构及其制造方法 | |
CN208781881U (zh) | 一种用于制作垂直结构led芯片的复合衬底 | |
CN102064242B (zh) | 高提取效率氮化镓发光二极管的制作方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: SUZHOU NANOJOIN PHOTONICS CO., LTD. Free format text: FORMER OWNER: SUZHOU NAJING OPTICAL CO., LTD. Effective date: 20120323 |
|
C41 | Transfer of patent application or patent right or utility model | ||
COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: 215125 SUZHOU, JIANGSU PROVINCE TO: 215021 SUZHOU, JIANGSU PROVINCE |
|
TR01 | Transfer of patent right |
Effective date of registration: 20120323 Address after: 215021 Suzhou, Jiangsu Province, Suzhou Industrial Park, Hong Dong Road, No. 388 Patentee after: Suzhou Nanojoin Photonics Co., Ltd. Address before: 215125, Suzhou, Jiangsu province Suzhou Industrial Park alone villa lake high Parish, if the waterway 398 Patentee before: Suzhou Najing Optical Co., Ltd. |
|
CF01 | Termination of patent right due to non-payment of annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20120125 Termination date: 20190430 |