JP5578805B2 - 半導体集積回路の保護回路及びその駆動方法 - Google Patents

半導体集積回路の保護回路及びその駆動方法 Download PDF

Info

Publication number
JP5578805B2
JP5578805B2 JP2009109392A JP2009109392A JP5578805B2 JP 5578805 B2 JP5578805 B2 JP 5578805B2 JP 2009109392 A JP2009109392 A JP 2009109392A JP 2009109392 A JP2009109392 A JP 2009109392A JP 5578805 B2 JP5578805 B2 JP 5578805B2
Authority
JP
Japan
Prior art keywords
terminal
power supply
semiconductor integrated
resistance element
integrated circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2009109392A
Other languages
English (en)
Japanese (ja)
Other versions
JP2010004021A (ja
JP2010004021A5 (enExample
Inventor
博之 中村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2009109392A priority Critical patent/JP5578805B2/ja
Priority to EP20090160123 priority patent/EP2124339B1/en
Priority to US12/466,618 priority patent/US8159795B2/en
Priority to CN 200910203097 priority patent/CN101588062B/zh
Publication of JP2010004021A publication Critical patent/JP2010004021A/ja
Priority to US13/408,533 priority patent/US8934204B2/en
Publication of JP2010004021A5 publication Critical patent/JP2010004021A5/ja
Application granted granted Critical
Publication of JP5578805B2 publication Critical patent/JP5578805B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP2009109392A 2008-05-19 2009-04-28 半導体集積回路の保護回路及びその駆動方法 Expired - Fee Related JP5578805B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2009109392A JP5578805B2 (ja) 2008-05-19 2009-04-28 半導体集積回路の保護回路及びその駆動方法
EP20090160123 EP2124339B1 (en) 2008-05-19 2009-05-13 Protection circuit for semiconductor integrated circuit and driving method therefor
US12/466,618 US8159795B2 (en) 2008-05-19 2009-05-15 Protection circuit for semiconductor integrated circuit and driving method therefor
CN 200910203097 CN101588062B (zh) 2008-05-19 2009-05-19 半导体集成电路的保护电路、其驱动方法及系统
US13/408,533 US8934204B2 (en) 2008-05-19 2012-02-29 Protection circuit for semiconductor integrated circuit and driving method therefor

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2008130828 2008-05-19
JP2008130828 2008-05-19
JP2009109392A JP5578805B2 (ja) 2008-05-19 2009-04-28 半導体集積回路の保護回路及びその駆動方法

Publications (3)

Publication Number Publication Date
JP2010004021A JP2010004021A (ja) 2010-01-07
JP2010004021A5 JP2010004021A5 (enExample) 2012-06-07
JP5578805B2 true JP5578805B2 (ja) 2014-08-27

Family

ID=41076713

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009109392A Expired - Fee Related JP5578805B2 (ja) 2008-05-19 2009-04-28 半導体集積回路の保護回路及びその駆動方法

Country Status (4)

Country Link
US (2) US8159795B2 (enExample)
EP (1) EP2124339B1 (enExample)
JP (1) JP5578805B2 (enExample)
CN (1) CN101588062B (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5352500B2 (ja) * 2010-03-02 2013-11-27 ルネサスエレクトロニクス株式会社 半導体装置
JP5479245B2 (ja) * 2010-07-01 2014-04-23 株式会社東芝 半導体装置
JP5402917B2 (ja) * 2010-12-20 2014-01-29 株式会社デンソー 静電気保護回路
US8704328B2 (en) * 2011-06-24 2014-04-22 Fuji Electric Co., Ltd. High-voltage integrated circuit device
US9401594B2 (en) * 2012-02-15 2016-07-26 Qualcomm Incorporated Surge protection for differential input/output interfaces
JP2014135610A (ja) * 2013-01-09 2014-07-24 Denso Corp 電子回路装置
TWI573248B (zh) * 2013-05-28 2017-03-01 普誠科技股份有限公司 可承受過度電性應力及避免栓鎖的靜電放電防護電路
JP2016111186A (ja) * 2014-12-05 2016-06-20 ソニー株式会社 半導体集積回路
US20170093152A1 (en) * 2015-09-25 2017-03-30 Mediatek Inc. Esd detection circuit
EP3394874B1 (en) * 2015-12-22 2025-08-20 Thermatool Corp. High frequency power supply system with closely regulated output for heating a workpiece
JP6680102B2 (ja) * 2016-06-16 2020-04-15 富士電機株式会社 半導体集積回路装置
JP7332321B2 (ja) * 2019-04-02 2023-08-23 ローム株式会社 半導体装置
JP7332320B2 (ja) * 2019-04-02 2023-08-23 ローム株式会社 半導体装置

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0521714A (ja) 1991-07-10 1993-01-29 Fujitsu Ltd 過電圧保護回路
JP3149999B2 (ja) * 1992-10-31 2001-03-26 日本電気株式会社 半導体入出力保護装置
US5631793A (en) * 1995-09-05 1997-05-20 Winbond Electronics Corporation Capacitor-couple electrostatic discharge protection circuit
US5877927A (en) * 1996-10-01 1999-03-02 Intel Corporation Method and apparatus for providing electrostatic discharge protection for high voltage inputs
JP3033739B2 (ja) 1998-08-12 2000-04-17 日本電気アイシーマイコンシステム株式会社 静電気保護回路
US6628159B2 (en) * 1999-09-17 2003-09-30 International Business Machines Corporation SOI voltage-tolerant body-coupled pass transistor
DE10124683B4 (de) * 2001-05-18 2006-06-14 R. Stahl Schaltgeräte GmbH Leistungsbegrenzungsschaltung
US6747501B2 (en) * 2001-07-13 2004-06-08 Industrial Technology Research Institute Dual-triggered electrostatic discharge protection circuit
JP2003338739A (ja) * 2002-05-21 2003-11-28 Mitsubishi Electric Corp Ａｄ変換器のアナログ信号入力回路
US7164565B2 (en) * 2002-11-29 2007-01-16 Sigmatel, Inc. ESD protection circuit
JP4464062B2 (ja) * 2003-03-24 2010-05-19 Ｎｅｃエレクトロニクス株式会社 電流駆動回路及び表示装置
JP4102277B2 (ja) * 2003-09-12 2008-06-18 株式会社東芝 半導体集積回路装置
US7450357B2 (en) * 2005-06-03 2008-11-11 United Microelectronics Corp. Electrostatic discharge protection circuit and semiconductor structure for electrostatic discharge
WO2007124079A2 (en) * 2006-04-21 2007-11-01 Sarnoff Corporation Esd clamp control by detection of power state
JP5053579B2 (ja) * 2006-06-28 2012-10-17 寛治 大塚 静電気放電保護回路
JP4993092B2 (ja) * 2007-05-31 2012-08-08 富士電機株式会社 レベルシフト回路および半導体装置
US8300370B2 (en) * 2008-11-14 2012-10-30 Mediatek Inc. ESD protection circuit and circuitry of IC applying the ESD protection circuit
TW201032320A (en) * 2009-02-17 2010-09-01 Ili Technology Corp Electrostatic discharge protection circuit

Also Published As

Publication number Publication date
JP2010004021A (ja) 2010-01-07
US8934204B2 (en) 2015-01-13
CN101588062B (zh) 2012-02-22
CN101588062A (zh) 2009-11-25
US20120162837A1 (en) 2012-06-28
US20090284882A1 (en) 2009-11-19
US8159795B2 (en) 2012-04-17
EP2124339B1 (en) 2013-07-31
EP2124339A1 (en) 2009-11-25

Similar Documents

Publication Publication Date Title
JP5578805B2 (ja) 半導体集積回路の保護回路及びその駆動方法
US7710695B2 (en) Integrated circuit and electrostatic discharge protection circuit
KR101870995B1 (ko) 반도체 집적회로의 ｅｓｄ 보호 회로
KR100639231B1 (ko) 정전기 방전 보호 회로
KR101034614B1 (ko) 정전기 보호 회로
CN104051453A (zh) 有源esd保护电路
US9413166B2 (en) Noise-tolerant active clamp with ESD protection capability in power up mode
CN102204054B (zh) 低电压静电放电保护
TWI524495B (zh) 具有閘極介電質保護之裝置
CN103151350B (zh) 集成电路电源轨抗静电保护的触发电路结构
US7420789B2 (en) ESD protection system for multi-power domain circuitry
CN104867922B (zh) 半导体集成电路装置以及使用该装置的电子设备
US9331067B2 (en) BigFET ESD protection that is robust against the first peak of a system-level pulse
KR20080076411A (ko) 정전기 보호 회로
CN105575960B (zh) 用于芯片上静电放电保护方案的方法及电路
US7184253B1 (en) ESD trigger circuit with injected current compensation
US7564665B2 (en) Pad ESD spreading technique
KR101239102B1 (ko) Ｅｓｄ보호 회로
JP2007214420A (ja) 半導体集積回路
KR100907894B1 (ko) 정전기 방전 보호회로
KR20090087333A (ko) 정전기 방전 회로
JP2021141317A (ja) 電気的ストレス保護回路、及びそれを備えた電子装置
JP2005260039A (ja) 半導体集積回路装置
JP2006093598A (ja) 半導体集積回路
US7477497B2 (en) Apparatus for electrostatic discharge protection of bipolar emitter follower circuits

Legal Events

Date Code Title Description
RD04 Notification of resignation of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7424

Effective date: 20100201

RD01 Notification of change of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7421

Effective date: 20100630

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20120419

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20120419

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20131002

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20131126

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20140127

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20140610

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20140708

LAPS Cancellation because of no payment of annual fees