CN101588062B - 半导体集成电路的保护电路、其驱动方法及系统 - Google Patents

半导体集成电路的保护电路、其驱动方法及系统 Download PDF

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Publication number
CN101588062B
CN101588062B CN 200910203097 CN200910203097A CN101588062B CN 101588062 B CN101588062 B CN 101588062B CN 200910203097 CN200910203097 CN 200910203097 CN 200910203097 A CN200910203097 A CN 200910203097A CN 101588062 B CN101588062 B CN 101588062B
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China
Prior art keywords
surge
semiconductor integrated
integrated circuit
circuit
voltage
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Expired - Fee Related
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CN 200910203097
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Chinese (zh)
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CN101588062A (zh
Inventor
中村博之
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Canon Inc
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Canon Inc
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking

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  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
CN 200910203097 2008-05-19 2009-05-19 半导体集成电路的保护电路、其驱动方法及系统 Expired - Fee Related CN101588062B (zh)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP2008-130828 2008-05-19
JP2008130828 2008-05-19
JP2008130828 2008-05-19
JP2009-109392 2009-04-28
JP2009109392 2009-04-28
JP2009109392A JP5578805B2 (ja) 2008-05-19 2009-04-28 半導体集積回路の保護回路及びその駆動方法

Publications (2)

Publication Number Publication Date
CN101588062A CN101588062A (zh) 2009-11-25
CN101588062B true CN101588062B (zh) 2012-02-22

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CN 200910203097 Expired - Fee Related CN101588062B (zh) 2008-05-19 2009-05-19 半导体集成电路的保护电路、其驱动方法及系统

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US (2) US8159795B2 (enExample)
EP (1) EP2124339B1 (enExample)
JP (1) JP5578805B2 (enExample)
CN (1) CN101588062B (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5352500B2 (ja) * 2010-03-02 2013-11-27 ルネサスエレクトロニクス株式会社 半導体装置
JP5479245B2 (ja) * 2010-07-01 2014-04-23 株式会社東芝 半導体装置
JP5402917B2 (ja) * 2010-12-20 2014-01-29 株式会社デンソー 静電気保護回路
US8704328B2 (en) * 2011-06-24 2014-04-22 Fuji Electric Co., Ltd. High-voltage integrated circuit device
US9401594B2 (en) * 2012-02-15 2016-07-26 Qualcomm Incorporated Surge protection for differential input/output interfaces
JP2014135610A (ja) * 2013-01-09 2014-07-24 Denso Corp 電子回路装置
TWI573248B (zh) * 2013-05-28 2017-03-01 普誠科技股份有限公司 可承受過度電性應力及避免栓鎖的靜電放電防護電路
JP2016111186A (ja) * 2014-12-05 2016-06-20 ソニー株式会社 半導体集積回路
US20170093152A1 (en) * 2015-09-25 2017-03-30 Mediatek Inc. Esd detection circuit
EP3394874B1 (en) * 2015-12-22 2025-08-20 Thermatool Corp. High frequency power supply system with closely regulated output for heating a workpiece
JP6680102B2 (ja) * 2016-06-16 2020-04-15 富士電機株式会社 半導体集積回路装置
JP7332321B2 (ja) * 2019-04-02 2023-08-23 ローム株式会社 半導体装置
JP7332320B2 (ja) * 2019-04-02 2023-08-23 ローム株式会社 半導体装置

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0521714A (ja) 1991-07-10 1993-01-29 Fujitsu Ltd 過電圧保護回路
JP3149999B2 (ja) * 1992-10-31 2001-03-26 日本電気株式会社 半導体入出力保護装置
US5631793A (en) * 1995-09-05 1997-05-20 Winbond Electronics Corporation Capacitor-couple electrostatic discharge protection circuit
US5877927A (en) * 1996-10-01 1999-03-02 Intel Corporation Method and apparatus for providing electrostatic discharge protection for high voltage inputs
JP3033739B2 (ja) 1998-08-12 2000-04-17 日本電気アイシーマイコンシステム株式会社 静電気保護回路
US6628159B2 (en) * 1999-09-17 2003-09-30 International Business Machines Corporation SOI voltage-tolerant body-coupled pass transistor
DE10124683B4 (de) * 2001-05-18 2006-06-14 R. Stahl Schaltgeräte GmbH Leistungsbegrenzungsschaltung
US6747501B2 (en) * 2001-07-13 2004-06-08 Industrial Technology Research Institute Dual-triggered electrostatic discharge protection circuit
JP2003338739A (ja) * 2002-05-21 2003-11-28 Mitsubishi Electric Corp Ａｄ変換器のアナログ信号入力回路
US7164565B2 (en) * 2002-11-29 2007-01-16 Sigmatel, Inc. ESD protection circuit
JP4464062B2 (ja) * 2003-03-24 2010-05-19 Ｎｅｃエレクトロニクス株式会社 電流駆動回路及び表示装置
JP4102277B2 (ja) * 2003-09-12 2008-06-18 株式会社東芝 半導体集積回路装置
US7450357B2 (en) * 2005-06-03 2008-11-11 United Microelectronics Corp. Electrostatic discharge protection circuit and semiconductor structure for electrostatic discharge
WO2007124079A2 (en) * 2006-04-21 2007-11-01 Sarnoff Corporation Esd clamp control by detection of power state
JP5053579B2 (ja) * 2006-06-28 2012-10-17 寛治 大塚 静電気放電保護回路
JP4993092B2 (ja) * 2007-05-31 2012-08-08 富士電機株式会社 レベルシフト回路および半導体装置
US8300370B2 (en) * 2008-11-14 2012-10-30 Mediatek Inc. ESD protection circuit and circuitry of IC applying the ESD protection circuit
TW201032320A (en) * 2009-02-17 2010-09-01 Ili Technology Corp Electrostatic discharge protection circuit

Also Published As

Publication number Publication date
JP2010004021A (ja) 2010-01-07
US8934204B2 (en) 2015-01-13
CN101588062A (zh) 2009-11-25
US20120162837A1 (en) 2012-06-28
US20090284882A1 (en) 2009-11-19
US8159795B2 (en) 2012-04-17
EP2124339B1 (en) 2013-07-31
JP5578805B2 (ja) 2014-08-27
EP2124339A1 (en) 2009-11-25

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Granted publication date: 20120222

Termination date: 20190519