JP5511185B2 - 被覆された炭素粒子の製造法およびリチウムイオン電池のためのアノード材料における該炭素粒子の使用 - Google Patents
被覆された炭素粒子の製造法およびリチウムイオン電池のためのアノード材料における該炭素粒子の使用 Download PDFInfo
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- JP5511185B2 JP5511185B2 JP2008501254A JP2008501254A JP5511185B2 JP 5511185 B2 JP5511185 B2 JP 5511185B2 JP 2008501254 A JP2008501254 A JP 2008501254A JP 2008501254 A JP2008501254 A JP 2008501254A JP 5511185 B2 JP5511185 B2 JP 5511185B2
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims description 130
- 239000002245 particle Substances 0.000 title claims description 122
- 229910052799 carbon Inorganic materials 0.000 title claims description 100
- 239000010405 anode material Substances 0.000 title claims description 48
- HBBGRARXTFLTSG-UHFFFAOYSA-N Lithium ion Chemical compound [Li+] HBBGRARXTFLTSG-UHFFFAOYSA-N 0.000 title claims description 28
- 229910001416 lithium ion Inorganic materials 0.000 title claims description 28
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- 238000000034 method Methods 0.000 claims description 49
- 230000008569 process Effects 0.000 claims description 35
- 239000010439 graphite Substances 0.000 claims description 30
- 229910002804 graphite Inorganic materials 0.000 claims description 30
- 229910052710 silicon Inorganic materials 0.000 claims description 29
- 239000010703 silicon Substances 0.000 claims description 29
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 26
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 25
- 239000007789 gas Substances 0.000 claims description 25
- 238000006243 chemical reaction Methods 0.000 claims description 24
- 229910000077 silane Inorganic materials 0.000 claims description 22
- 239000011230 binding agent Substances 0.000 claims description 17
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 14
- 150000001875 compounds Chemical class 0.000 claims description 13
- 229910052786 argon Inorganic materials 0.000 claims description 7
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 5
- 229910052787 antimony Inorganic materials 0.000 claims description 5
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 5
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 4
- 229910052785 arsenic Inorganic materials 0.000 claims description 4
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 4
- 229910052796 boron Inorganic materials 0.000 claims description 4
- 238000005229 chemical vapour deposition Methods 0.000 claims description 4
- 229910052733 gallium Inorganic materials 0.000 claims description 4
- 229910052738 indium Inorganic materials 0.000 claims description 4
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 4
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- 239000011574 phosphorus Substances 0.000 claims description 4
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- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 2
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 2
- 239000005977 Ethylene Substances 0.000 description 2
- ZHNUHDYFZUAESO-UHFFFAOYSA-N Formamide Chemical compound NC=O ZHNUHDYFZUAESO-UHFFFAOYSA-N 0.000 description 2
- 108010010803 Gelatin Proteins 0.000 description 2
- MZRVEZGGRBJDDB-UHFFFAOYSA-N N-Butyllithium Chemical compound [Li]CCCC MZRVEZGGRBJDDB-UHFFFAOYSA-N 0.000 description 2
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 2
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- 235000019322 gelatine Nutrition 0.000 description 2
- 235000011852 gelatine desserts Nutrition 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 238000003780 insertion Methods 0.000 description 2
- 230000037431 insertion Effects 0.000 description 2
- 239000002608 ionic liquid Substances 0.000 description 2
- KWGKDLIKAYFUFQ-UHFFFAOYSA-M lithium chloride Chemical compound [Li+].[Cl-] KWGKDLIKAYFUFQ-UHFFFAOYSA-M 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
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- 229910000064 phosphane Inorganic materials 0.000 description 2
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- ZZXUZKXVROWEIF-UHFFFAOYSA-N 1,2-butylene carbonate Chemical compound CCC1COC(=O)O1 ZZXUZKXVROWEIF-UHFFFAOYSA-N 0.000 description 1
- WNXJIVFYUVYPPR-UHFFFAOYSA-N 1,3-dioxolane Chemical compound C1COCO1 WNXJIVFYUVYPPR-UHFFFAOYSA-N 0.000 description 1
- JWUJQDFVADABEY-UHFFFAOYSA-N 2-methyltetrahydrofuran Chemical compound CC1CCCO1 JWUJQDFVADABEY-UHFFFAOYSA-N 0.000 description 1
- LPEKGGXMPWTOCB-UHFFFAOYSA-N 8beta-(2,3-epoxy-2-methylbutyryloxy)-14-acetoxytithifolin Natural products COC(=O)C(C)O LPEKGGXMPWTOCB-UHFFFAOYSA-N 0.000 description 1
- OIFBSDVPJOWBCH-UHFFFAOYSA-N Diethyl carbonate Chemical compound CCOC(=O)OCC OIFBSDVPJOWBCH-UHFFFAOYSA-N 0.000 description 1
- XTHFKEDIFFGKHM-UHFFFAOYSA-N Dimethoxyethane Chemical compound COCCOC XTHFKEDIFFGKHM-UHFFFAOYSA-N 0.000 description 1
- 229910010238 LiAlCl 4 Inorganic materials 0.000 description 1
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- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
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- 125000004429 atom Chemical group 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
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Classifications
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- H—ELECTRICITY
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- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M4/00—Electrodes
- H01M4/02—Electrodes composed of, or comprising, active material
- H01M4/13—Electrodes for accumulators with non-aqueous electrolyte, e.g. for lithium-accumulators; Processes of manufacture thereof
- H01M4/133—Electrodes based on carbonaceous material, e.g. graphite-intercalation compounds or CFx
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/24—Deposition of silicon only
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4417—Methods specially adapted for coating powder
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M10/00—Secondary cells; Manufacture thereof
- H01M10/05—Accumulators with non-aqueous electrolyte
- H01M10/052—Li-accumulators
- H01M10/0525—Rocking-chair batteries, i.e. batteries with lithium insertion or intercalation in both electrodes; Lithium-ion batteries
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01M4/00—Electrodes
- H01M4/02—Electrodes composed of, or comprising, active material
- H01M4/36—Selection of substances as active materials, active masses, active liquids
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- H—ELECTRICITY
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- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
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- H01M4/02—Electrodes composed of, or comprising, active material
- H01M4/36—Selection of substances as active materials, active masses, active liquids
- H01M4/38—Selection of substances as active materials, active masses, active liquids of elements or alloys
- H01M4/386—Silicon or alloys based on silicon
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
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- H01M4/02—Electrodes composed of, or comprising, active material
- H01M4/36—Selection of substances as active materials, active masses, active liquids
- H01M4/58—Selection of substances as active materials, active masses, active liquids of inorganic compounds other than oxides or hydroxides, e.g. sulfides, selenides, tellurides, halogenides or LiCoFy; of polyanionic structures, e.g. phosphates, silicates or borates
- H01M4/583—Carbonaceous material, e.g. graphite-intercalation compounds or CFx
- H01M4/587—Carbonaceous material, e.g. graphite-intercalation compounds or CFx for inserting or intercalating light metals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M4/00—Electrodes
- H01M4/02—Electrodes composed of, or comprising, active material
- H01M4/36—Selection of substances as active materials, active masses, active liquids
- H01M4/362—Composites
- H01M4/364—Composites as mixtures
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
- Y02E60/10—Energy storage using batteries
Description
−本発明により被覆された炭素粒子5〜86質量%、
−バインダー4〜20質量%、
−導電性改善剤(Leitfaehigkeitsverbessers)0〜10質量%および
−1μm〜100μmの平均粒径を有するグラファイト0〜40質量%
を含有するかまたはそれらからなる組成物(その際、成分の割合は合計で最大100質量%である)は、溶媒中で懸濁されかつ集電体にナイフ塗布される。有利には、
−本発明により被覆された炭素粒子5〜86質量%、
−バインダー4〜20質量%および
−導電性改善剤0〜10質量%、
を含有するかまたはそれらからなる組成物が、しかしながら有利には、
−本発明により被覆された炭素粒子5〜86質量%および
−バインダー4〜20質量%
を含有するかまたはそれらからなる組成物が、本発明による使用において用いられる。
−本発明により被覆された炭素粒子5〜86質量%、
−バインダー4〜20質量%
−導電性改善剤0〜10質量%および
−1μm〜100μmの平均粒径を有するグラファイト0〜40質量%
を有し、その際、成分の割合は合計で最大100質量%である。
−本発明により被覆された炭素粒子5〜86質量%、
−バインダー4〜20質量%および
−導電性カーボンブラック0〜10質量%
を有し、極めて有利には本発明によるアノード材料は、
−本発明により被覆された炭素粒子5〜86質量%および
−バインダー4〜20質量%
を有し、その際、成分の割合は合計で最大100質量%である。
加熱可能な回転管炉にグラファイト(Timcal社のTIMREX KS6)20gを装入した。該炉を700℃の温度に加熱した。グラファイトが装入された管状の反応室を、毎分5回転の回転速度で回転させた。回転管炉の反応室に、担体ガスとしてのアルゴンおよびモノシラン(SiH4)10体積%からなるガス流を50sccm(標準立方センチメートル/分;1sccmは、0℃および大気圧に対してガス1cm3/分に相当する)の流量で貫流させた。4時間の反応時間後、元素状のケイ素からの被覆を有する、被覆された炭素粒子が得られる。
−例1に従って製造された被覆された炭素粒子90gおよび
−バインダーのポリビニリデンフルオリド(PVdF)10g
をまず機械的に混合し、引き続きN−メチル−2−ピロリドン−懸濁液(その際、PVdFは、5質量%の溶液としてN−メチル−2−ピロリドン中に存在する)中で、高速攪拌機を用いてさらにもう一度混合しかつ引き続きプライマーにより前処理された20μmの厚さの市販の銅箔上に、有利には250μmの厚みにおいてナイフ塗布した。このようにして被覆された銅箔を、引き続き80℃にて真空下で乾燥させかつ引き続き約80℃にてローラー塗布する。電極を引き続き円形に、この被覆された銅箔から打抜いた。
電気化学サイクルは、いわゆる半電池配置において行った。半電池配置の場合、本発明によるアノード材料は作用電極として、サンドイッチ配置の作用電極−セパレータ/電解質−対向電極/参照電極において測定し、その際、対向電極/参照電極としてリチウムガラスを使用した。電位限界としてLi/Li+に対して100mVおよび1.0Vを使用した。サイクル速度は、アノード材料の活性組成物−これは被覆された炭素粒子の全質量に相当する−毎の電流密度により示される。
−エチレンカーボネート50質量%と、混合物に対して1モル/l LiPF6を有するジメチルカーボネート50質量%とからなる混合物98質量%、および
−ビニレンカーボネート2質量%
とから構成されている電解質0.5mLを使用した。
Claims (19)
- 被覆された炭素粒子の製造法において、電気伝導性の炭素粒子を、反応室中で酸素不含のガス雰囲気における少なくとも1つのガス状のシランからの化学気相堆積により元素状のドープされたまたは非ドープのケイ素で被覆し、その際、電気伝導性の炭素粒子は気相堆積のあいだ常に移動していることを特徴とする、被覆された炭素粒子の製造法。
- 炭素粒子が、非晶質および/または結晶質のグラファイトの形においてあることを特徴とする、請求項1記載の方法。
- 10nm〜44μmの平均粒径を有する炭素粒子を使用することを特徴とする、請求項1または2記載の方法。
- 5〜700m2/gのBET表面積を有する炭素粒子を使用することを特徴とする、請求項1から3までのいずれか1項記載の方法。
- 炭素粒子としてグラファイト粒子を使用することを特徴とする、請求項1から4までのいずれか1項記載の方法。
- 少なくとも1つのガス状のシランおよびアルゴンを含有するガス流を反応室中に導くことを特徴とする、請求項1から5までのいずれか1項記載の方法。
- ガス流が、ガス状のシラン5〜50体積%を有することを特徴とする、請求項1から6までのいずれか1項記載の方法。
- ガス流が、ガス状のシランの他に、リン、ヒ素、アンチモン、ホウ素、アルミニウム、ガリウムおよび/またはインジウムから選択されたドープ元素のガス状の化合物を有することを特徴とする、請求項1から7までのいずれか1項記載の方法。
- ガス流が、ガス状のシランとしてモノシランSiH4のみを有することを特徴とする、請求項1から8までのいずれか1項記載の方法。
- 元素状のドープされたまたは非ドープのケイ素をつくるために、ガス状のシランおよびドープ元素のガス状の化合物の分解を500〜1400℃の温度にて実施することを特徴とする、請求項1から9までのいずれか1項記載の方法。
- 被覆された炭素粒子において、電気伝導性の炭素核が、元素状のドープされたケイ素で被覆されており、元素状のケイ素からの被覆が、リン、ヒ素、アンチモン、ホウ素、アルミニウム、ガリウムおよび/またはインジウムから選択されたドープ元素を有することを特徴とする、被覆された炭素粒子。
- 電気伝導性の炭素核が、非晶質および/または結晶質のグラファイトの形においてあることを特徴とする、請求項11記載の被覆された炭素粒子。
- 被覆された粒子が、10nm〜65μmの平均粒径を有することを特徴とする、請求項12記載の被覆された炭素粒子。
- 被覆された粒子が、被覆された炭素粒子に対して4〜60質量%のケイ素を有することを特徴とする、請求項11または13記載の被覆された炭素粒子。
- リチウムイオン電池のためのアノード材料を製造するための、請求項11から14までのいずれか1項記載の被覆された炭素粒子の使用。
- アノード材料が、請求項11から14までのいずれか1項記載の被覆された炭素粒子を有することを特徴とする、リチウムイオン電池のためのアノード材料。
- アノード材料が、
−請求項11から14までのいずれか1項記載の被覆された炭素粒子5〜86質量%、
−バインダー4〜20質量%、
−導電性改善剤0〜10質量%および
−1μm〜100μmの平均粒径を有するグラファイト0〜40質量%
を有し、その際、成分の割合が合計で最大100質量%であることを特徴とする、請求項16記載のアノード材料。 - アノード材料が、
−請求項11から14までのいずれか1項記載の被覆された炭素粒子5〜86質量%、
−バインダー4〜20質量%および
−導電性改善剤0〜10質量%
を有し、その際、成分の割合が合計で最大100質量%であることを特徴とする、請求項16または17記載のアノード材料。 - リチウムイオン電池が、請求項16から18までのいずれか1項記載のアノード材料からなるアノードを有することを特徴とする、リチウムイオン電池。
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DE102005011940A DE102005011940A1 (de) | 2005-03-14 | 2005-03-14 | Verfahren zur Herstellung von beschichteten Kohlenstoffpartikel und deren Verwendung in Anodenmaterialien für Lithium-Ionenbatterien |
PCT/EP2006/050438 WO2006097380A1 (de) | 2005-03-14 | 2006-01-25 | Verfahren zur herstellung von beschichteten kohlenstoffpartikel und deren verwendung in anodenmaterialien für lithium-ionenbatterien |
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CN (2) | CN104789936A (ja) |
DE (1) | DE102005011940A1 (ja) |
ES (1) | ES2694499T3 (ja) |
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US20080145761A1 (en) | 2008-06-19 |
CN101137765A (zh) | 2008-03-05 |
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ES2694499T3 (es) | 2018-12-21 |
CN104789936A (zh) | 2015-07-22 |
US8673502B2 (en) | 2014-03-18 |
JP2008532912A (ja) | 2008-08-21 |
KR20070111521A (ko) | 2007-11-21 |
WO2006097380A1 (de) | 2006-09-21 |
PT1859073T (pt) | 2018-11-23 |
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DE102005011940A1 (de) | 2006-09-21 |
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