JP5500249B2 - ウェーハの汚染防止方法、検査方法および製造方法 - Google Patents

ウェーハの汚染防止方法、検査方法および製造方法 Download PDF

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Publication number
JP5500249B2
JP5500249B2 JP2012518256A JP2012518256A JP5500249B2 JP 5500249 B2 JP5500249 B2 JP 5500249B2 JP 2012518256 A JP2012518256 A JP 2012518256A JP 2012518256 A JP2012518256 A JP 2012518256A JP 5500249 B2 JP5500249 B2 JP 5500249B2
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Prior art keywords
wafer
back surface
silicon wafer
quality inspection
contamination
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Japanese (ja)
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JPWO2011152051A1 (ja
Inventor
栄治 神山
健司 青木
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Sumco Corp
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Sumco Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67288—Monitoring of warpage, curvature, damage, defects or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
    • H01L21/67219—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process comprising at least one polishing chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
JP2012518256A 2010-06-01 2011-06-01 ウェーハの汚染防止方法、検査方法および製造方法 Active JP5500249B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2012518256A JP5500249B2 (ja) 2010-06-01 2011-06-01 ウェーハの汚染防止方法、検査方法および製造方法

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2010125734 2010-06-01
JP2010125734 2010-06-01
JP2012518256A JP5500249B2 (ja) 2010-06-01 2011-06-01 ウェーハの汚染防止方法、検査方法および製造方法
PCT/JP2011/003094 WO2011152051A1 (ja) 2010-06-01 2011-06-01 ウェーハの汚染防止方法、検査方法および製造方法

Publications (2)

Publication Number Publication Date
JPWO2011152051A1 JPWO2011152051A1 (ja) 2013-07-25
JP5500249B2 true JP5500249B2 (ja) 2014-05-21

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JP2012518256A Active JP5500249B2 (ja) 2010-06-01 2011-06-01 ウェーハの汚染防止方法、検査方法および製造方法

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JP (1) JP5500249B2 (ko)
KR (1) KR101356400B1 (ko)
DE (1) DE112011101877B4 (ko)
WO (1) WO2011152051A1 (ko)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101860919B1 (ko) 2011-12-16 2018-06-29 엘지전자 주식회사 태양 전지 및 이의 제조 방법

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0564760U (ja) * 1992-01-22 1993-08-27 東京航空計器株式会社 円盤状物品の保持装置
JPH09270401A (ja) * 1996-01-31 1997-10-14 Shin Etsu Handotai Co Ltd 半導体ウェーハの研磨方法
JPH11156771A (ja) * 1997-11-28 1999-06-15 Dainippon Screen Mfg Co Ltd 基板搬送装置および基板搬送方法
JP2004079587A (ja) * 2002-08-09 2004-03-11 Reitetsukusu:Kk ウエハ回転装置とこれを有する端部傷検査装置
JP2004087522A (ja) * 2002-08-22 2004-03-18 Sumitomo Mitsubishi Silicon Corp 半導体ウェーハの製造方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002033378A (ja) 2000-07-19 2002-01-31 Mimasu Semiconductor Industry Co Ltd ウェーハハンドリング装置
KR20040040794A (ko) * 2002-11-08 2004-05-13 주식회사 실트론 실리콘 웨이퍼 표면의 오염 검사 방법
KR100825528B1 (ko) * 2002-12-27 2008-04-25 주식회사 실트론 실리콘웨이퍼의 연마 방법 및 연마 장치
JP2005167208A (ja) * 2003-10-24 2005-06-23 Ade Corp ノッチ化／フラット化２００ｍｍウエーハエッジグリップエンドエフェクタ
JP4337581B2 (ja) * 2004-02-27 2009-09-30 信越半導体株式会社 半導体ウエーハの両面研磨装置及び割れ検査方法
KR20080073584A (ko) * 2007-02-06 2008-08-11 주식회사 하이닉스반도체 실리콘 웨이퍼의 표면 검사 방법

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0564760U (ja) * 1992-01-22 1993-08-27 東京航空計器株式会社 円盤状物品の保持装置
JPH09270401A (ja) * 1996-01-31 1997-10-14 Shin Etsu Handotai Co Ltd 半導体ウェーハの研磨方法
JPH11156771A (ja) * 1997-11-28 1999-06-15 Dainippon Screen Mfg Co Ltd 基板搬送装置および基板搬送方法
JP2004079587A (ja) * 2002-08-09 2004-03-11 Reitetsukusu:Kk ウエハ回転装置とこれを有する端部傷検査装置
JP2004087522A (ja) * 2002-08-22 2004-03-18 Sumitomo Mitsubishi Silicon Corp 半導体ウェーハの製造方法

Also Published As

Publication number Publication date
DE112011101877T5 (de) 2013-04-11
KR20130054969A (ko) 2013-05-27
WO2011152051A1 (ja) 2011-12-08
JPWO2011152051A1 (ja) 2013-07-25
DE112011101877B4 (de) 2020-03-26
KR101356400B1 (ko) 2014-01-28

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