JP5340511B1 - 半導体装置の製造方法及び半導体装置 - Google Patents
半導体装置の製造方法及び半導体装置 Download PDFInfo
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- JP5340511B1 JP5340511B1 JP2013516886A JP2013516886A JP5340511B1 JP 5340511 B1 JP5340511 B1 JP 5340511B1 JP 2013516886 A JP2013516886 A JP 2013516886A JP 2013516886 A JP2013516886 A JP 2013516886A JP 5340511 B1 JP5340511 B1 JP 5340511B1
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- semiconductor device
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 458
- 238000004519 manufacturing process Methods 0.000 title claims description 174
- 239000011521 glass Substances 0.000 claims abstract description 372
- 239000000203 mixture Substances 0.000 claims abstract description 169
- 238000010304 firing Methods 0.000 claims abstract description 60
- 229910004298 SiO 2 Inorganic materials 0.000 claims abstract description 39
- 239000002994 raw material Substances 0.000 claims abstract description 39
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims abstract description 24
- 229910052745 lead Inorganic materials 0.000 claims abstract description 18
- 229910052744 lithium Inorganic materials 0.000 claims abstract description 18
- 229910052785 arsenic Inorganic materials 0.000 claims abstract description 17
- 229910052708 sodium Inorganic materials 0.000 claims abstract description 17
- 229910052787 antimony Inorganic materials 0.000 claims abstract description 16
- 239000000945 filler Substances 0.000 claims abstract description 16
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- 239000000155 melt Substances 0.000 claims abstract description 15
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- 229910052784 alkaline earth metal Inorganic materials 0.000 claims abstract description 4
- 150000001342 alkaline earth metals Chemical class 0.000 claims abstract description 4
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- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 3
- 229910052783 alkali metal Inorganic materials 0.000 description 3
- 150000001340 alkali metals Chemical class 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
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- 229910052725 zinc Inorganic materials 0.000 description 3
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- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- 239000003513 alkali Substances 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- QZPSXPBJTPJTSZ-UHFFFAOYSA-N aqua regia Chemical compound Cl.O[N+]([O-])=O QZPSXPBJTPJTSZ-UHFFFAOYSA-N 0.000 description 2
- 229910001882 dioxygen Inorganic materials 0.000 description 2
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- 229910044991 metal oxide Inorganic materials 0.000 description 2
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- 238000011160 research Methods 0.000 description 2
- 238000007788 roughening Methods 0.000 description 2
- 238000003756 stirring Methods 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
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- 238000007572 expansion measurement Methods 0.000 description 1
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- 238000011049 filling Methods 0.000 description 1
- 239000002241 glass-ceramic Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
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- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 239000011236 particulate material Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
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- 230000000930 thermomechanical effect Effects 0.000 description 1
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- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3157—Partial encapsulation or coating
- H01L23/3178—Coating or filling in grooves made in the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/6609—Diodes
- H01L29/66136—PN junction diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Formation Of Insulating Films (AREA)
- Glass Compositions (AREA)
- Thyristors (AREA)
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JPPCT/JP2012/061780 | 2012-05-08 | ||
| PCT/JP2012/061780 WO2012160962A1 (ja) | 2011-05-23 | 2012-05-08 | 半導体装置の製造方法及び半導体装置 |
| JPPCT/JP2012/061779 | 2012-05-08 | ||
| PCT/JP2012/061779 WO2012160961A1 (ja) | 2011-05-23 | 2012-05-08 | 半導体装置の製造方法及び半導体装置 |
| PCT/JP2012/080795 WO2013168314A1 (ja) | 2012-05-08 | 2012-11-28 | 半導体装置の製造方法及び半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP5340511B1 true JP5340511B1 (ja) | 2013-11-13 |
| JPWO2013168314A1 JPWO2013168314A1 (ja) | 2015-12-24 |
Family
ID=49550943
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013516886A Active JP5340511B1 (ja) | 2012-05-08 | 2012-11-28 | 半導体装置の製造方法及び半導体装置 |
Country Status (7)
| Country | Link |
|---|---|
| JP (1) | JP5340511B1 (zh) |
| CN (1) | CN103518254B (zh) |
| DE (1) | DE112012003178B4 (zh) |
| FR (1) | FR2990561B1 (zh) |
| NL (1) | NL2010635C2 (zh) |
| TW (1) | TWI553738B (zh) |
| WO (1) | WO2013168314A1 (zh) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPWO2013168521A1 (ja) * | 2012-05-08 | 2016-01-07 | 新電元工業株式会社 | 樹脂封止型半導体装置及びその製造方法 |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6588028B2 (ja) * | 2014-10-31 | 2019-10-09 | 新電元工業株式会社 | 半導体装置の製造方法及びレジストガラス |
| US9978882B2 (en) | 2014-11-13 | 2018-05-22 | Shindengen Electric Manufacturing Co., Ltd. | Method of manufacturing semiconductor device and glass film forming apparatus |
| WO2017134808A1 (ja) * | 2016-02-05 | 2017-08-10 | 新電元工業株式会社 | 半導体装置の製造方法 |
| WO2018096643A1 (ja) * | 2016-11-25 | 2018-05-31 | 新電元工業株式会社 | 半導体装置の製造方法及び半導体装置 |
| CN108604550B (zh) * | 2016-11-25 | 2021-08-31 | 新电元工业株式会社 | 半导体装置的制造方法以及半导体装置 |
| JP6396598B1 (ja) * | 2017-04-19 | 2018-09-26 | 新電元工業株式会社 | 半導体装置の製造方法 |
| FR3079662B1 (fr) * | 2018-03-30 | 2020-02-28 | Soitec | Substrat pour applications radiofrequences et procede de fabrication associe |
| JP7461210B2 (ja) | 2020-05-14 | 2024-04-03 | 株式会社日立製作所 | 半導体装置の製造方法 |
Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5240071A (en) * | 1975-09-26 | 1977-03-28 | Hitachi Ltd | Semiconductor device |
| JPS5393783A (en) * | 1977-01-26 | 1978-08-17 | Nec Home Electronics Ltd | Mesa type semiconductor device |
| JPS5526656A (en) * | 1978-08-17 | 1980-02-26 | Hitachi Ltd | Semiconductor element coverd with glass |
| JPS57202742A (en) * | 1981-06-09 | 1982-12-11 | Toshiba Corp | Glass for semiconductor coating |
| JPH01186629A (ja) * | 1988-01-14 | 1989-07-26 | Rohm Co Ltd | メサ型半導体素子の製造方法 |
| JPH02163938A (ja) * | 1988-12-16 | 1990-06-25 | Fuji Electric Co Ltd | 半導体素子の製造方法 |
| JP2004087955A (ja) * | 2002-08-28 | 2004-03-18 | Shindengen Electric Mfg Co Ltd | 半導体装置の製造方法及び半導体装置 |
| JP2005525287A (ja) * | 2002-05-15 | 2005-08-25 | フエロ コーポレーション | 鉛およびカドミウムフリーのエレクトロニクス用オーバーグレーズが塗付された電子デバイス |
| JP2005298259A (ja) * | 2004-04-09 | 2005-10-27 | Murata Mfg Co Ltd | ガラスセラミック原料組成物、ガラスセラミック焼結体およびガラスセラミック多層基板 |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1180908A (en) | 1966-11-17 | 1970-02-11 | English Electric Co Ltd | Improvements in or relating to processes for Forming an Insulating Coating on Silicon, and to Coated Silicon |
| JPS5951137B2 (ja) | 1976-09-16 | 1984-12-12 | 三菱電機株式会社 | 半導体装置の製造方法 |
| FR2458144A1 (fr) * | 1979-05-29 | 1980-12-26 | Thomson Csf | Structure de passivation d'un affleurement de jonction semi-conductrice et son procede de fabrication |
| FR2487576A1 (fr) * | 1980-07-24 | 1982-01-29 | Thomson Csf | Procede de fabrication de diodes mesa glassivees |
| US4727048A (en) * | 1981-03-16 | 1988-02-23 | Fairchild Camera & Instrument Corporation | Process for making isolated semiconductor structure |
| DE3247938A1 (de) * | 1982-12-24 | 1984-07-05 | SEMIKRON Gesellschaft für Gleichrichterbau u. Elektronik mbH, 8500 Nürnberg | Halbleiterbauelement hoher sperrspannungsbelastbarkeit |
| US4714687A (en) | 1986-10-27 | 1987-12-22 | Corning Glass Works | Glass-ceramics suitable for dielectric substrates |
| JPH05336463A (ja) | 1992-06-03 | 1993-12-17 | Sony Corp | テレビジョン受像機 |
| JP3339549B2 (ja) | 1996-10-14 | 2002-10-28 | 株式会社日立製作所 | ガラス被覆半導体装置及びその製造方法 |
| JP2001220230A (ja) | 2000-02-09 | 2001-08-14 | Murata Mfg Co Ltd | 誘電体磁器組成物 |
| JP2002016272A (ja) | 2000-06-30 | 2002-01-18 | Kyocera Corp | 光電変換装置 |
| JP3943341B2 (ja) | 2001-02-23 | 2007-07-11 | 日本電気硝子株式会社 | ガラスセラミックス組成物 |
| DE102006013077A1 (de) * | 2006-03-22 | 2007-09-27 | Semikron Elektronik Gmbh & Co. Kg | Leistungshalbleiterbauelement mit Sekundärpassivierungsschicht und zugehöriges Herstellungsverfahren |
| US7843302B2 (en) * | 2006-05-08 | 2010-11-30 | Ibiden Co., Ltd. | Inductor and electric power supply using it |
| DE102006062428B4 (de) * | 2006-12-27 | 2012-10-18 | Schott Ag | Verfahren zur Herstellung eines mit einem bleifreien Glas passiviertenelektronischen Bauelements sowie elektronisches Bauelement mit aufgebrachtem bleifreien Glas und dessen Verwendung |
| KR101683882B1 (ko) * | 2009-12-24 | 2016-12-21 | 엘지이노텍 주식회사 | 고효율 실리콘 태양전지 전면전극 형성용 페이스트 조성물 및 이를 포함하는 실리콘 태양전지 |
| JP5416631B2 (ja) * | 2010-03-25 | 2014-02-12 | 株式会社日立製作所 | アルミニウム電極配線用のガラス組成物と導電性ペースト、そのアルミニウム電極配線を具備する電子部品、及び、この電子部品の製造方法 |
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2012
- 2012-11-28 JP JP2013516886A patent/JP5340511B1/ja active Active
- 2012-11-28 WO PCT/JP2012/080795 patent/WO2013168314A1/ja active Application Filing
- 2012-11-28 DE DE112012003178.4T patent/DE112012003178B4/de active Active
- 2012-11-28 CN CN201280005993.0A patent/CN103518254B/zh active Active
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2013
- 2013-04-15 TW TW102113292A patent/TWI553738B/zh active
- 2013-04-15 NL NL2010635A patent/NL2010635C2/en active
- 2013-05-07 FR FR1354172A patent/FR2990561B1/fr active Active
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5240071A (en) * | 1975-09-26 | 1977-03-28 | Hitachi Ltd | Semiconductor device |
| JPS5393783A (en) * | 1977-01-26 | 1978-08-17 | Nec Home Electronics Ltd | Mesa type semiconductor device |
| JPS5526656A (en) * | 1978-08-17 | 1980-02-26 | Hitachi Ltd | Semiconductor element coverd with glass |
| JPS57202742A (en) * | 1981-06-09 | 1982-12-11 | Toshiba Corp | Glass for semiconductor coating |
| JPH01186629A (ja) * | 1988-01-14 | 1989-07-26 | Rohm Co Ltd | メサ型半導体素子の製造方法 |
| JPH02163938A (ja) * | 1988-12-16 | 1990-06-25 | Fuji Electric Co Ltd | 半導体素子の製造方法 |
| JP2005525287A (ja) * | 2002-05-15 | 2005-08-25 | フエロ コーポレーション | 鉛およびカドミウムフリーのエレクトロニクス用オーバーグレーズが塗付された電子デバイス |
| JP2004087955A (ja) * | 2002-08-28 | 2004-03-18 | Shindengen Electric Mfg Co Ltd | 半導体装置の製造方法及び半導体装置 |
| JP2005298259A (ja) * | 2004-04-09 | 2005-10-27 | Murata Mfg Co Ltd | ガラスセラミック原料組成物、ガラスセラミック焼結体およびガラスセラミック多層基板 |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPWO2013168521A1 (ja) * | 2012-05-08 | 2016-01-07 | 新電元工業株式会社 | 樹脂封止型半導体装置及びその製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201401379A (zh) | 2014-01-01 |
| TWI553738B (zh) | 2016-10-11 |
| CN103518254A (zh) | 2014-01-15 |
| CN103518254B (zh) | 2016-07-20 |
| DE112012003178B4 (de) | 2022-12-08 |
| FR2990561B1 (fr) | 2016-09-16 |
| WO2013168314A1 (ja) | 2013-11-14 |
| NL2010635A (en) | 2013-11-11 |
| DE112012003178T5 (de) | 2014-04-10 |
| FR2990561A1 (fr) | 2013-11-15 |
| JPWO2013168314A1 (ja) | 2015-12-24 |
| NL2010635C2 (en) | 2015-04-13 |
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