NL2010635C2 - Method of manufacturing semiconductor device and semiconductor device. - Google Patents
Method of manufacturing semiconductor device and semiconductor device. Download PDFInfo
- Publication number
- NL2010635C2 NL2010635C2 NL2010635A NL2010635A NL2010635C2 NL 2010635 C2 NL2010635 C2 NL 2010635C2 NL 2010635 A NL2010635 A NL 2010635A NL 2010635 A NL2010635 A NL 2010635A NL 2010635 C2 NL2010635 C2 NL 2010635C2
- Authority
- NL
- Netherlands
- Prior art keywords
- semiconductor device
- semiconductor
- glass
- manufacturing
- layer
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 499
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 182
- 239000011521 glass Substances 0.000 claims abstract description 452
- 239000000203 mixture Substances 0.000 claims abstract description 194
- 239000000463 material Substances 0.000 claims abstract description 80
- 239000002994 raw material Substances 0.000 claims abstract description 60
- 229910011255 B2O3 Inorganic materials 0.000 claims abstract description 25
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims abstract description 23
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 17
- 229910052745 lead Inorganic materials 0.000 claims abstract description 17
- 229910052744 lithium Inorganic materials 0.000 claims abstract description 17
- 229910052787 antimony Inorganic materials 0.000 claims abstract description 16
- 229910052785 arsenic Inorganic materials 0.000 claims abstract description 16
- 229910052708 sodium Inorganic materials 0.000 claims abstract description 16
- 239000000945 filler Substances 0.000 claims abstract description 14
- 238000002844 melting Methods 0.000 claims abstract description 12
- 230000008018 melting Effects 0.000 claims abstract description 12
- 229910052593 corundum Inorganic materials 0.000 claims abstract 4
- 229910001845 yogo sapphire Inorganic materials 0.000 claims abstract 4
- 238000000034 method Methods 0.000 claims description 67
- 229910052784 alkaline earth metal Inorganic materials 0.000 claims description 23
- 150000001342 alkaline earth metals Chemical class 0.000 claims description 23
- 239000002245 particle Substances 0.000 claims description 18
- 230000003647 oxidation Effects 0.000 claims description 15
- 238000007254 oxidation reaction Methods 0.000 claims description 15
- 229910052700 potassium Inorganic materials 0.000 claims description 15
- 238000001962 electrophoresis Methods 0.000 claims description 12
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 10
- 239000002518 antifoaming agent Substances 0.000 claims description 3
- 239000011230 binding agent Substances 0.000 claims description 3
- 229910052748 manganese Inorganic materials 0.000 claims description 3
- 229910052715 tantalum Inorganic materials 0.000 claims description 3
- 229910052718 tin Inorganic materials 0.000 claims description 3
- 229910052720 vanadium Inorganic materials 0.000 claims description 3
- 230000007704 transition Effects 0.000 claims 8
- 238000000151 deposition Methods 0.000 claims 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims 1
- 239000003795 chemical substances by application Substances 0.000 claims 1
- 238000009413 insulation Methods 0.000 abstract description 101
- 229910052681 coesite Inorganic materials 0.000 abstract description 6
- 229910052906 cristobalite Inorganic materials 0.000 abstract description 6
- 229910052682 stishovite Inorganic materials 0.000 abstract description 6
- 229910052905 tridymite Inorganic materials 0.000 abstract description 6
- 229910000287 alkaline earth metal oxide Inorganic materials 0.000 abstract 1
- 239000010419 fine particle Substances 0.000 abstract 1
- 239000000155 melt Substances 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 238000005245 sintering Methods 0.000 abstract 1
- 238000011156 evaluation Methods 0.000 description 43
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 38
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 37
- 229910052710 silicon Inorganic materials 0.000 description 37
- 239000010703 silicon Substances 0.000 description 37
- 238000009792 diffusion process Methods 0.000 description 30
- 229910000480 nickel oxide Inorganic materials 0.000 description 26
- 239000000758 substrate Substances 0.000 description 26
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 21
- 239000011787 zinc oxide Substances 0.000 description 19
- 229910052796 boron Inorganic materials 0.000 description 17
- 239000000126 substance Substances 0.000 description 17
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 16
- QVQLCTNNEUAWMS-UHFFFAOYSA-N barium oxide Inorganic materials [Ba]=O QVQLCTNNEUAWMS-UHFFFAOYSA-N 0.000 description 16
- 239000012535 impurity Substances 0.000 description 16
- 238000002161 passivation Methods 0.000 description 15
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 14
- 230000009471 action Effects 0.000 description 14
- 238000012360 testing method Methods 0.000 description 14
- 238000002425 crystallisation Methods 0.000 description 13
- 230000008025 crystallization Effects 0.000 description 13
- 239000011347 resin Substances 0.000 description 12
- 229920005989 resin Polymers 0.000 description 12
- 238000007747 plating Methods 0.000 description 11
- 230000015556 catabolic process Effects 0.000 description 10
- 229910004009 SiCy Inorganic materials 0.000 description 9
- 238000000465 moulding Methods 0.000 description 9
- 229920002120 photoresistant polymer Polymers 0.000 description 9
- 230000000694 effects Effects 0.000 description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 7
- 238000007796 conventional method Methods 0.000 description 7
- 239000001301 oxygen Substances 0.000 description 7
- 229910052760 oxygen Inorganic materials 0.000 description 7
- 238000005520 cutting process Methods 0.000 description 6
- 238000009826 distribution Methods 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 229910052725 zinc Inorganic materials 0.000 description 4
- 239000011701 zinc Substances 0.000 description 4
- -1 CaCCg Chemical compound 0.000 description 3
- 238000000137 annealing Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000012299 nitrogen atmosphere Substances 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 238000007650 screen-printing Methods 0.000 description 3
- 238000004528 spin coating Methods 0.000 description 3
- 238000003892 spreading Methods 0.000 description 3
- 230000007480 spreading Effects 0.000 description 3
- 238000004017 vitrification Methods 0.000 description 3
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 2
- QZPSXPBJTPJTSZ-UHFFFAOYSA-N aqua regia Chemical compound Cl.O[N+]([O-])=O QZPSXPBJTPJTSZ-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 2
- 229910001882 dioxygen Inorganic materials 0.000 description 2
- 230000002708 enhancing effect Effects 0.000 description 2
- 238000011049 filling Methods 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 238000012856 packing Methods 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 238000007788 roughening Methods 0.000 description 2
- 238000009987 spinning Methods 0.000 description 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- HAYXDMNJJFVXCI-UHFFFAOYSA-N arsenic(5+) Chemical compound [As+5] HAYXDMNJJFVXCI-UHFFFAOYSA-N 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000007572 expansion measurement Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 239000002241 glass-ceramic Substances 0.000 description 1
- YEXPOXQUZXUXJW-UHFFFAOYSA-N lead(II) oxide Inorganic materials [Pb]=O YEXPOXQUZXUXJW-UHFFFAOYSA-N 0.000 description 1
- VTHJTEIRLNZDEV-UHFFFAOYSA-L magnesium dihydroxide Chemical compound [OH-].[OH-].[Mg+2] VTHJTEIRLNZDEV-UHFFFAOYSA-L 0.000 description 1
- 229910001862 magnesium hydroxide Inorganic materials 0.000 description 1
- 235000012254 magnesium hydroxide Nutrition 0.000 description 1
- 239000000347 magnesium hydroxide Substances 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3157—Partial encapsulation or coating
- H01L23/3178—Coating or filling in grooves made in the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/6609—Diodes
- H01L29/66136—PN junction diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Formation Of Insulating Films (AREA)
- Glass Compositions (AREA)
- Thyristors (AREA)
Applications Claiming Priority (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012061779 | 2012-05-08 | ||
| PCT/JP2012/061780 WO2012160962A1 (ja) | 2011-05-23 | 2012-05-08 | 半導体装置の製造方法及び半導体装置 |
| JP2012061780 | 2012-05-08 | ||
| PCT/JP2012/061779 WO2012160961A1 (ja) | 2011-05-23 | 2012-05-08 | 半導体装置の製造方法及び半導体装置 |
| PCT/JP2012/080795 WO2013168314A1 (ja) | 2012-05-08 | 2012-11-28 | 半導体装置の製造方法及び半導体装置 |
| JP2012080795 | 2012-11-28 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| NL2010635A NL2010635A (en) | 2013-11-11 |
| NL2010635C2 true NL2010635C2 (en) | 2015-04-13 |
Family
ID=49550943
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL2010635A NL2010635C2 (en) | 2012-05-08 | 2013-04-15 | Method of manufacturing semiconductor device and semiconductor device. |
Country Status (7)
| Country | Link |
|---|---|
| JP (1) | JP5340511B1 (zh) |
| CN (1) | CN103518254B (zh) |
| DE (1) | DE112012003178B4 (zh) |
| FR (1) | FR2990561B1 (zh) |
| NL (1) | NL2010635C2 (zh) |
| TW (1) | TWI553738B (zh) |
| WO (1) | WO2013168314A1 (zh) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPWO2013168521A1 (ja) * | 2012-05-08 | 2016-01-07 | 新電元工業株式会社 | 樹脂封止型半導体装置及びその製造方法 |
| JP6588028B2 (ja) * | 2014-10-31 | 2019-10-09 | 新電元工業株式会社 | 半導体装置の製造方法及びレジストガラス |
| US9978882B2 (en) | 2014-11-13 | 2018-05-22 | Shindengen Electric Manufacturing Co., Ltd. | Method of manufacturing semiconductor device and glass film forming apparatus |
| WO2017134808A1 (ja) * | 2016-02-05 | 2017-08-10 | 新電元工業株式会社 | 半導体装置の製造方法 |
| WO2018096643A1 (ja) * | 2016-11-25 | 2018-05-31 | 新電元工業株式会社 | 半導体装置の製造方法及び半導体装置 |
| CN108604550B (zh) * | 2016-11-25 | 2021-08-31 | 新电元工业株式会社 | 半导体装置的制造方法以及半导体装置 |
| JP6396598B1 (ja) * | 2017-04-19 | 2018-09-26 | 新電元工業株式会社 | 半導体装置の製造方法 |
| FR3079662B1 (fr) * | 2018-03-30 | 2020-02-28 | Soitec | Substrat pour applications radiofrequences et procede de fabrication associe |
| JP7461210B2 (ja) | 2020-05-14 | 2024-04-03 | 株式会社日立製作所 | 半導体装置の製造方法 |
Family Cites Families (26)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1180908A (en) | 1966-11-17 | 1970-02-11 | English Electric Co Ltd | Improvements in or relating to processes for Forming an Insulating Coating on Silicon, and to Coated Silicon |
| JPS5240071A (en) * | 1975-09-26 | 1977-03-28 | Hitachi Ltd | Semiconductor device |
| JPS5951137B2 (ja) | 1976-09-16 | 1984-12-12 | 三菱電機株式会社 | 半導体装置の製造方法 |
| JPS5393783A (en) * | 1977-01-26 | 1978-08-17 | Nec Home Electronics Ltd | Mesa type semiconductor device |
| JPS5526656A (en) * | 1978-08-17 | 1980-02-26 | Hitachi Ltd | Semiconductor element coverd with glass |
| FR2458144A1 (fr) * | 1979-05-29 | 1980-12-26 | Thomson Csf | Structure de passivation d'un affleurement de jonction semi-conductrice et son procede de fabrication |
| FR2487576A1 (fr) * | 1980-07-24 | 1982-01-29 | Thomson Csf | Procede de fabrication de diodes mesa glassivees |
| US4727048A (en) * | 1981-03-16 | 1988-02-23 | Fairchild Camera & Instrument Corporation | Process for making isolated semiconductor structure |
| JPS57202742A (en) * | 1981-06-09 | 1982-12-11 | Toshiba Corp | Glass for semiconductor coating |
| DE3247938A1 (de) * | 1982-12-24 | 1984-07-05 | SEMIKRON Gesellschaft für Gleichrichterbau u. Elektronik mbH, 8500 Nürnberg | Halbleiterbauelement hoher sperrspannungsbelastbarkeit |
| US4714687A (en) | 1986-10-27 | 1987-12-22 | Corning Glass Works | Glass-ceramics suitable for dielectric substrates |
| JPH01186629A (ja) * | 1988-01-14 | 1989-07-26 | Rohm Co Ltd | メサ型半導体素子の製造方法 |
| JPH02163938A (ja) * | 1988-12-16 | 1990-06-25 | Fuji Electric Co Ltd | 半導体素子の製造方法 |
| JPH05336463A (ja) | 1992-06-03 | 1993-12-17 | Sony Corp | テレビジョン受像機 |
| JP3339549B2 (ja) | 1996-10-14 | 2002-10-28 | 株式会社日立製作所 | ガラス被覆半導体装置及びその製造方法 |
| JP2001220230A (ja) | 2000-02-09 | 2001-08-14 | Murata Mfg Co Ltd | 誘電体磁器組成物 |
| JP2002016272A (ja) | 2000-06-30 | 2002-01-18 | Kyocera Corp | 光電変換装置 |
| JP3943341B2 (ja) | 2001-02-23 | 2007-07-11 | 日本電気硝子株式会社 | ガラスセラミックス組成物 |
| US7740899B2 (en) * | 2002-05-15 | 2010-06-22 | Ferro Corporation | Electronic device having lead and cadmium free electronic overglaze applied thereto |
| JP4022113B2 (ja) * | 2002-08-28 | 2007-12-12 | 新電元工業株式会社 | 半導体装置の製造方法及び半導体装置 |
| JP4736342B2 (ja) * | 2004-04-09 | 2011-07-27 | 株式会社村田製作所 | ガラスセラミック原料組成物、ガラスセラミック焼結体およびガラスセラミック多層基板 |
| DE102006013077A1 (de) * | 2006-03-22 | 2007-09-27 | Semikron Elektronik Gmbh & Co. Kg | Leistungshalbleiterbauelement mit Sekundärpassivierungsschicht und zugehöriges Herstellungsverfahren |
| US7843302B2 (en) * | 2006-05-08 | 2010-11-30 | Ibiden Co., Ltd. | Inductor and electric power supply using it |
| DE102006062428B4 (de) * | 2006-12-27 | 2012-10-18 | Schott Ag | Verfahren zur Herstellung eines mit einem bleifreien Glas passiviertenelektronischen Bauelements sowie elektronisches Bauelement mit aufgebrachtem bleifreien Glas und dessen Verwendung |
| KR101683882B1 (ko) * | 2009-12-24 | 2016-12-21 | 엘지이노텍 주식회사 | 고효율 실리콘 태양전지 전면전극 형성용 페이스트 조성물 및 이를 포함하는 실리콘 태양전지 |
| JP5416631B2 (ja) * | 2010-03-25 | 2014-02-12 | 株式会社日立製作所 | アルミニウム電極配線用のガラス組成物と導電性ペースト、そのアルミニウム電極配線を具備する電子部品、及び、この電子部品の製造方法 |
-
2012
- 2012-11-28 JP JP2013516886A patent/JP5340511B1/ja active Active
- 2012-11-28 WO PCT/JP2012/080795 patent/WO2013168314A1/ja active Application Filing
- 2012-11-28 DE DE112012003178.4T patent/DE112012003178B4/de active Active
- 2012-11-28 CN CN201280005993.0A patent/CN103518254B/zh active Active
-
2013
- 2013-04-15 TW TW102113292A patent/TWI553738B/zh active
- 2013-04-15 NL NL2010635A patent/NL2010635C2/en active
- 2013-05-07 FR FR1354172A patent/FR2990561B1/fr active Active
Also Published As
| Publication number | Publication date |
|---|---|
| TW201401379A (zh) | 2014-01-01 |
| TWI553738B (zh) | 2016-10-11 |
| CN103518254A (zh) | 2014-01-15 |
| CN103518254B (zh) | 2016-07-20 |
| JP5340511B1 (ja) | 2013-11-13 |
| DE112012003178B4 (de) | 2022-12-08 |
| FR2990561B1 (fr) | 2016-09-16 |
| WO2013168314A1 (ja) | 2013-11-14 |
| NL2010635A (en) | 2013-11-11 |
| DE112012003178T5 (de) | 2014-04-10 |
| FR2990561A1 (fr) | 2013-11-15 |
| JPWO2013168314A1 (ja) | 2015-12-24 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| NL2010635C2 (en) | Method of manufacturing semiconductor device and semiconductor device. | |
| US9941112B2 (en) | Method of manufacturing semiconductor device and semiconductor device | |
| US9698069B2 (en) | Glass composition for protecting semiconductor junction, method of manufacturing semiconductor device and semiconductor device | |
| US9455231B2 (en) | Resin-sealed semiconductor device and method of manufacturing the same | |
| US9236318B1 (en) | Glass composition for protecting semiconductor junction, method of manufacturing semiconductor device and semiconductor device | |
| US9006113B2 (en) | Glass composition for protecting semiconductor junction, method of manufacturing semiconductor device and semiconductor device | |
| US10186425B2 (en) | Method of manufacturing semiconductor device and resist glass | |
| US9190365B2 (en) | Glass composition for protecting semiconductor junction, method of manufacturing semiconductor device and semiconductor device | |
| US9099483B2 (en) | Glass composition for protecting semiconductor junction, method of manufacturing semiconductor device and semiconductor device | |
| WO2012160962A1 (ja) | 半導体装置の製造方法及び半導体装置 | |
| JP5655140B2 (ja) | 半導体装置の製造方法及び半導体装置 | |
| JP5848821B2 (ja) | 半導体接合保護用ガラス組成物、半導体装置の製造方法、半導体装置及び半導体接合保護用ガラス組成物の製造方法 | |
| JP5655139B2 (ja) | 半導体装置の製造方法及び半導体装置 | |
| JPWO2013168521A1 (ja) | 樹脂封止型半導体装置及びその製造方法 |