JPS5526656A - Semiconductor element coverd with glass - Google Patents

Semiconductor element coverd with glass

Info

Publication number
JPS5526656A
JPS5526656A JP9947178A JP9947178A JPS5526656A JP S5526656 A JPS5526656 A JP S5526656A JP 9947178 A JP9947178 A JP 9947178A JP 9947178 A JP9947178 A JP 9947178A JP S5526656 A JPS5526656 A JP S5526656A
Authority
JP
Japan
Prior art keywords
glass
semiconductor element
sio
zno
composition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9947178A
Other languages
Japanese (ja)
Inventor
Masanobu Hanazono
Masaaki Takahashi
Shinichi Hara
Yutaka Misawa
Komei Yatsuno
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP9947178A priority Critical patent/JPS5526656A/en
Publication of JPS5526656A publication Critical patent/JPS5526656A/en
Pending legal-status Critical Current

Links

Landscapes

  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE: To reduce a strain caused between a glass and element by making up the glass for covering the PN junction exposed portion of a semiconductor element of ZnO, B2O3 and SiO2 and setting the total amount of the above compounds over 99wt% while keeping the addition under 0.1wt%.
CONSTITUTION: To protect the exposed PN junction portion of a semiconductor element, the exposed portion is covered with the composition including ZnO, B2O3 and SiO2 by setting the total amount of those above 99.9%. A heat expansion coefficient of the glass is defined at 28 to 45×10-7/°C, the composition of the three components is defined as follows. That is, the three components composition comprising the ZnO, B2O3 and SiO2 may be indicated at a wt %, they are included within a range as shown in the Figure. According to such a construction, a heat expansion coefficient of the glass is similar to that of Si so that the strain is reduced to prevent cracking. A baking is performed at 670 to 730°C.
COPYRIGHT: (C)1980,JPO&Japio
JP9947178A 1978-08-17 1978-08-17 Semiconductor element coverd with glass Pending JPS5526656A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9947178A JPS5526656A (en) 1978-08-17 1978-08-17 Semiconductor element coverd with glass

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9947178A JPS5526656A (en) 1978-08-17 1978-08-17 Semiconductor element coverd with glass

Publications (1)

Publication Number Publication Date
JPS5526656A true JPS5526656A (en) 1980-02-26

Family

ID=14248220

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9947178A Pending JPS5526656A (en) 1978-08-17 1978-08-17 Semiconductor element coverd with glass

Country Status (1)

Country Link
JP (1) JPS5526656A (en)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4993399B1 (en) * 2011-05-23 2012-08-08 新電元工業株式会社 Semiconductor junction protecting glass composition, semiconductor device manufacturing method, and semiconductor device
WO2012160962A1 (en) * 2011-05-23 2012-11-29 新電元工業株式会社 Semiconductor device production method and semiconductor device
WO2012160632A1 (en) * 2011-05-23 2012-11-29 新電元工業株式会社 Glass composition for semiconductor junction protection, method for manufacturing semiconductor device, and semiconductor device
JP5340511B1 (en) * 2012-05-08 2013-11-13 新電元工業株式会社 Semiconductor device manufacturing method and semiconductor device
WO2013168521A1 (en) * 2012-05-08 2013-11-14 新電元工業株式会社 Resin-sealed semiconductor device and production method therefor
JP5655139B2 (en) * 2011-05-23 2015-01-14 新電元工業株式会社 Semiconductor device manufacturing method and semiconductor device
JP5655140B2 (en) * 2011-05-23 2015-01-14 新電元工業株式会社 Semiconductor device manufacturing method and semiconductor device
US9159549B2 (en) 2011-05-26 2015-10-13 Shindengen Electric Manufacturing Co., Ltd. Glass composition for protecting semiconductor junction, method of manufacturing semiconductor device and semiconductor device
JP5827398B2 (en) * 2012-05-08 2015-12-02 新電元工業株式会社 Method for manufacturing glass composition for protecting semiconductor junction, method for manufacturing semiconductor device, and semiconductor device
JPWO2013168623A1 (en) * 2012-05-08 2016-01-07 新電元工業株式会社 Semiconductor junction protecting glass composition, semiconductor device manufacturing method, and semiconductor device

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5655140B2 (en) * 2011-05-23 2015-01-14 新電元工業株式会社 Semiconductor device manufacturing method and semiconductor device
WO2012160962A1 (en) * 2011-05-23 2012-11-29 新電元工業株式会社 Semiconductor device production method and semiconductor device
WO2012160632A1 (en) * 2011-05-23 2012-11-29 新電元工業株式会社 Glass composition for semiconductor junction protection, method for manufacturing semiconductor device, and semiconductor device
WO2012160631A1 (en) * 2011-05-23 2012-11-29 新電元工業株式会社 Glass composition for semiconductor junction protection, method for manufacturing semiconductor device, and semiconductor device
WO2012160961A1 (en) * 2011-05-23 2012-11-29 新電元工業株式会社 Semiconductor device production method and semiconductor device
JP5139596B2 (en) * 2011-05-23 2013-02-06 新電元工業株式会社 Semiconductor junction protecting glass composition, semiconductor device manufacturing method, and semiconductor device
JP4993399B1 (en) * 2011-05-23 2012-08-08 新電元工業株式会社 Semiconductor junction protecting glass composition, semiconductor device manufacturing method, and semiconductor device
JP5655139B2 (en) * 2011-05-23 2015-01-14 新電元工業株式会社 Semiconductor device manufacturing method and semiconductor device
US9941112B2 (en) 2011-05-26 2018-04-10 Shindengen Electric Manufacturing Co., Ltd Method of manufacturing semiconductor device and semiconductor device
US9159549B2 (en) 2011-05-26 2015-10-13 Shindengen Electric Manufacturing Co., Ltd. Glass composition for protecting semiconductor junction, method of manufacturing semiconductor device and semiconductor device
WO2013168521A1 (en) * 2012-05-08 2013-11-14 新電元工業株式会社 Resin-sealed semiconductor device and production method therefor
WO2013168314A1 (en) * 2012-05-08 2013-11-14 新電元工業株式会社 Semiconductor device production method and semiconductor device
JP5827398B2 (en) * 2012-05-08 2015-12-02 新電元工業株式会社 Method for manufacturing glass composition for protecting semiconductor junction, method for manufacturing semiconductor device, and semiconductor device
JP5827397B2 (en) * 2012-05-08 2015-12-02 新電元工業株式会社 Resin-sealed semiconductor device and method for manufacturing resin-sealed semiconductor device
JPWO2013168623A1 (en) * 2012-05-08 2016-01-07 新電元工業株式会社 Semiconductor junction protecting glass composition, semiconductor device manufacturing method, and semiconductor device
US9698069B2 (en) 2012-05-08 2017-07-04 Shindengen Electric Manufacturing Co., Ltd. Glass composition for protecting semiconductor junction, method of manufacturing semiconductor device and semiconductor device
JP5340511B1 (en) * 2012-05-08 2013-11-13 新電元工業株式会社 Semiconductor device manufacturing method and semiconductor device

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