JPS5526656A - Semiconductor element coverd with glass - Google Patents
Semiconductor element coverd with glassInfo
- Publication number
- JPS5526656A JPS5526656A JP9947178A JP9947178A JPS5526656A JP S5526656 A JPS5526656 A JP S5526656A JP 9947178 A JP9947178 A JP 9947178A JP 9947178 A JP9947178 A JP 9947178A JP S5526656 A JPS5526656 A JP S5526656A
- Authority
- JP
- Japan
- Prior art keywords
- glass
- semiconductor element
- sio
- zno
- composition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Formation Of Insulating Films (AREA)
Abstract
PURPOSE: To reduce a strain caused between a glass and element by making up the glass for covering the PN junction exposed portion of a semiconductor element of ZnO, B2O3 and SiO2 and setting the total amount of the above compounds over 99wt% while keeping the addition under 0.1wt%.
CONSTITUTION: To protect the exposed PN junction portion of a semiconductor element, the exposed portion is covered with the composition including ZnO, B2O3 and SiO2 by setting the total amount of those above 99.9%. A heat expansion coefficient of the glass is defined at 28 to 45×10-7/°C, the composition of the three components is defined as follows. That is, the three components composition comprising the ZnO, B2O3 and SiO2 may be indicated at a wt %, they are included within a range as shown in the Figure. According to such a construction, a heat expansion coefficient of the glass is similar to that of Si so that the strain is reduced to prevent cracking. A baking is performed at 670 to 730°C.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9947178A JPS5526656A (en) | 1978-08-17 | 1978-08-17 | Semiconductor element coverd with glass |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9947178A JPS5526656A (en) | 1978-08-17 | 1978-08-17 | Semiconductor element coverd with glass |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5526656A true JPS5526656A (en) | 1980-02-26 |
Family
ID=14248220
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP9947178A Pending JPS5526656A (en) | 1978-08-17 | 1978-08-17 | Semiconductor element coverd with glass |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5526656A (en) |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4993399B1 (en) * | 2011-05-23 | 2012-08-08 | 新電元工業株式会社 | Semiconductor junction protecting glass composition, semiconductor device manufacturing method, and semiconductor device |
WO2012160962A1 (en) * | 2011-05-23 | 2012-11-29 | 新電元工業株式会社 | Semiconductor device production method and semiconductor device |
WO2012160632A1 (en) * | 2011-05-23 | 2012-11-29 | 新電元工業株式会社 | Glass composition for semiconductor junction protection, method for manufacturing semiconductor device, and semiconductor device |
JP5340511B1 (en) * | 2012-05-08 | 2013-11-13 | 新電元工業株式会社 | Semiconductor device manufacturing method and semiconductor device |
WO2013168521A1 (en) * | 2012-05-08 | 2013-11-14 | 新電元工業株式会社 | Resin-sealed semiconductor device and production method therefor |
JP5655139B2 (en) * | 2011-05-23 | 2015-01-14 | 新電元工業株式会社 | Semiconductor device manufacturing method and semiconductor device |
JP5655140B2 (en) * | 2011-05-23 | 2015-01-14 | 新電元工業株式会社 | Semiconductor device manufacturing method and semiconductor device |
US9159549B2 (en) | 2011-05-26 | 2015-10-13 | Shindengen Electric Manufacturing Co., Ltd. | Glass composition for protecting semiconductor junction, method of manufacturing semiconductor device and semiconductor device |
JP5827398B2 (en) * | 2012-05-08 | 2015-12-02 | 新電元工業株式会社 | Method for manufacturing glass composition for protecting semiconductor junction, method for manufacturing semiconductor device, and semiconductor device |
JPWO2013168623A1 (en) * | 2012-05-08 | 2016-01-07 | 新電元工業株式会社 | Semiconductor junction protecting glass composition, semiconductor device manufacturing method, and semiconductor device |
-
1978
- 1978-08-17 JP JP9947178A patent/JPS5526656A/en active Pending
Cited By (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5655140B2 (en) * | 2011-05-23 | 2015-01-14 | 新電元工業株式会社 | Semiconductor device manufacturing method and semiconductor device |
WO2012160962A1 (en) * | 2011-05-23 | 2012-11-29 | 新電元工業株式会社 | Semiconductor device production method and semiconductor device |
WO2012160632A1 (en) * | 2011-05-23 | 2012-11-29 | 新電元工業株式会社 | Glass composition for semiconductor junction protection, method for manufacturing semiconductor device, and semiconductor device |
WO2012160631A1 (en) * | 2011-05-23 | 2012-11-29 | 新電元工業株式会社 | Glass composition for semiconductor junction protection, method for manufacturing semiconductor device, and semiconductor device |
WO2012160961A1 (en) * | 2011-05-23 | 2012-11-29 | 新電元工業株式会社 | Semiconductor device production method and semiconductor device |
JP5139596B2 (en) * | 2011-05-23 | 2013-02-06 | 新電元工業株式会社 | Semiconductor junction protecting glass composition, semiconductor device manufacturing method, and semiconductor device |
JP4993399B1 (en) * | 2011-05-23 | 2012-08-08 | 新電元工業株式会社 | Semiconductor junction protecting glass composition, semiconductor device manufacturing method, and semiconductor device |
JP5655139B2 (en) * | 2011-05-23 | 2015-01-14 | 新電元工業株式会社 | Semiconductor device manufacturing method and semiconductor device |
US9941112B2 (en) | 2011-05-26 | 2018-04-10 | Shindengen Electric Manufacturing Co., Ltd | Method of manufacturing semiconductor device and semiconductor device |
US9159549B2 (en) | 2011-05-26 | 2015-10-13 | Shindengen Electric Manufacturing Co., Ltd. | Glass composition for protecting semiconductor junction, method of manufacturing semiconductor device and semiconductor device |
WO2013168521A1 (en) * | 2012-05-08 | 2013-11-14 | 新電元工業株式会社 | Resin-sealed semiconductor device and production method therefor |
WO2013168314A1 (en) * | 2012-05-08 | 2013-11-14 | 新電元工業株式会社 | Semiconductor device production method and semiconductor device |
JP5827398B2 (en) * | 2012-05-08 | 2015-12-02 | 新電元工業株式会社 | Method for manufacturing glass composition for protecting semiconductor junction, method for manufacturing semiconductor device, and semiconductor device |
JP5827397B2 (en) * | 2012-05-08 | 2015-12-02 | 新電元工業株式会社 | Resin-sealed semiconductor device and method for manufacturing resin-sealed semiconductor device |
JPWO2013168623A1 (en) * | 2012-05-08 | 2016-01-07 | 新電元工業株式会社 | Semiconductor junction protecting glass composition, semiconductor device manufacturing method, and semiconductor device |
US9698069B2 (en) | 2012-05-08 | 2017-07-04 | Shindengen Electric Manufacturing Co., Ltd. | Glass composition for protecting semiconductor junction, method of manufacturing semiconductor device and semiconductor device |
JP5340511B1 (en) * | 2012-05-08 | 2013-11-13 | 新電元工業株式会社 | Semiconductor device manufacturing method and semiconductor device |
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