JPS5529161A - Glass for semiconductor passivation - Google Patents
Glass for semiconductor passivationInfo
- Publication number
- JPS5529161A JPS5529161A JP10259578A JP10259578A JPS5529161A JP S5529161 A JPS5529161 A JP S5529161A JP 10259578 A JP10259578 A JP 10259578A JP 10259578 A JP10259578 A JP 10259578A JP S5529161 A JPS5529161 A JP S5529161A
- Authority
- JP
- Japan
- Prior art keywords
- pbo
- weight
- glass
- sio
- melting point
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Formation Of Insulating Films (AREA)
Abstract
PURPOSE: To lower the glass baking temperature by adding the powder of aluminium titanate etc. to the low melting point glass consisting of two components PbO and B2O3, or of three components PbO, B2O3 and SiO2 with a prescribed composition and thus regulating the thermal expansion coefficient.
CONSTITUTION: For making the low melting point glass consisting of two components PbO and B2O3, PbO will be made more than 30 weight %. And if said glass consists of three components PbO, B2O3 and SiO2,PbO will be made more than 35 weight %, B2O3 more than 10 weight % and SiO2 less than 10 weight %. Next, to the low melting point glass prepared as mentioned above, the powder of 1-10μm grain size such as aluminum titanate, zirconium phosphate, cordierite etc., which will be filler, will be added up to the weight less than about half of the glass and thoroughly stirred. In this way the coefficient of thermal expansion will be regulated 45×10-7W55×10-7/°C and the baking temperature will be lowered down to about 450°C which is not detrimental to the electrode fixed on the semiconductor element.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10259578A JPS5529161A (en) | 1978-08-22 | 1978-08-22 | Glass for semiconductor passivation |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10259578A JPS5529161A (en) | 1978-08-22 | 1978-08-22 | Glass for semiconductor passivation |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5529161A true JPS5529161A (en) | 1980-03-01 |
JPS6148774B2 JPS6148774B2 (en) | 1986-10-25 |
Family
ID=14331580
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10259578A Granted JPS5529161A (en) | 1978-08-22 | 1978-08-22 | Glass for semiconductor passivation |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5529161A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1258911A2 (en) * | 2001-03-27 | 2002-11-20 | Sharp Kabushiki Kaisha | Method of using titanium doped aluminium oxide for passivation of ferroelectric materials and devices including the same |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0713381U (en) * | 1993-08-10 | 1995-03-07 | 悦郎 手塚 | Golf gloves |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS51130172A (en) * | 1975-04-22 | 1976-11-12 | Jenaer Glaswerk Schott & Gen | Glass for making semiconductor surface nonconductive |
-
1978
- 1978-08-22 JP JP10259578A patent/JPS5529161A/en active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS51130172A (en) * | 1975-04-22 | 1976-11-12 | Jenaer Glaswerk Schott & Gen | Glass for making semiconductor surface nonconductive |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1258911A2 (en) * | 2001-03-27 | 2002-11-20 | Sharp Kabushiki Kaisha | Method of using titanium doped aluminium oxide for passivation of ferroelectric materials and devices including the same |
EP1258911A3 (en) * | 2001-03-27 | 2007-02-21 | Sharp Kabushiki Kaisha | Method of using titanium doped aluminium oxide for passivation of ferroelectric materials and devices including the same |
Also Published As
Publication number | Publication date |
---|---|
JPS6148774B2 (en) | 1986-10-25 |
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