JPS5529161A - Glass for semiconductor passivation - Google Patents

Glass for semiconductor passivation

Info

Publication number
JPS5529161A
JPS5529161A JP10259578A JP10259578A JPS5529161A JP S5529161 A JPS5529161 A JP S5529161A JP 10259578 A JP10259578 A JP 10259578A JP 10259578 A JP10259578 A JP 10259578A JP S5529161 A JPS5529161 A JP S5529161A
Authority
JP
Japan
Prior art keywords
pbo
weight
glass
sio
melting point
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10259578A
Other languages
Japanese (ja)
Other versions
JPS6148774B2 (en
Inventor
Katsuhiro Ono
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP10259578A priority Critical patent/JPS5529161A/en
Publication of JPS5529161A publication Critical patent/JPS5529161A/en
Publication of JPS6148774B2 publication Critical patent/JPS6148774B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE: To lower the glass baking temperature by adding the powder of aluminium titanate etc. to the low melting point glass consisting of two components PbO and B2O3, or of three components PbO, B2O3 and SiO2 with a prescribed composition and thus regulating the thermal expansion coefficient.
CONSTITUTION: For making the low melting point glass consisting of two components PbO and B2O3, PbO will be made more than 30 weight %. And if said glass consists of three components PbO, B2O3 and SiO2,PbO will be made more than 35 weight %, B2O3 more than 10 weight % and SiO2 less than 10 weight %. Next, to the low melting point glass prepared as mentioned above, the powder of 1-10μm grain size such as aluminum titanate, zirconium phosphate, cordierite etc., which will be filler, will be added up to the weight less than about half of the glass and thoroughly stirred. In this way the coefficient of thermal expansion will be regulated 45×10-7W55×10-7/°C and the baking temperature will be lowered down to about 450°C which is not detrimental to the electrode fixed on the semiconductor element.
COPYRIGHT: (C)1980,JPO&Japio
JP10259578A 1978-08-22 1978-08-22 Glass for semiconductor passivation Granted JPS5529161A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10259578A JPS5529161A (en) 1978-08-22 1978-08-22 Glass for semiconductor passivation

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10259578A JPS5529161A (en) 1978-08-22 1978-08-22 Glass for semiconductor passivation

Publications (2)

Publication Number Publication Date
JPS5529161A true JPS5529161A (en) 1980-03-01
JPS6148774B2 JPS6148774B2 (en) 1986-10-25

Family

ID=14331580

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10259578A Granted JPS5529161A (en) 1978-08-22 1978-08-22 Glass for semiconductor passivation

Country Status (1)

Country Link
JP (1) JPS5529161A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1258911A2 (en) * 2001-03-27 2002-11-20 Sharp Kabushiki Kaisha Method of using titanium doped aluminium oxide for passivation of ferroelectric materials and devices including the same

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0713381U (en) * 1993-08-10 1995-03-07 悦郎 手塚 Golf gloves

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51130172A (en) * 1975-04-22 1976-11-12 Jenaer Glaswerk Schott & Gen Glass for making semiconductor surface nonconductive

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51130172A (en) * 1975-04-22 1976-11-12 Jenaer Glaswerk Schott & Gen Glass for making semiconductor surface nonconductive

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1258911A2 (en) * 2001-03-27 2002-11-20 Sharp Kabushiki Kaisha Method of using titanium doped aluminium oxide for passivation of ferroelectric materials and devices including the same
EP1258911A3 (en) * 2001-03-27 2007-02-21 Sharp Kabushiki Kaisha Method of using titanium doped aluminium oxide for passivation of ferroelectric materials and devices including the same

Also Published As

Publication number Publication date
JPS6148774B2 (en) 1986-10-25

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