JPS5632751A - Glass for passivation of silicon semiconductor element - Google Patents

Glass for passivation of silicon semiconductor element

Info

Publication number
JPS5632751A
JPS5632751A JP10835979A JP10835979A JPS5632751A JP S5632751 A JPS5632751 A JP S5632751A JP 10835979 A JP10835979 A JP 10835979A JP 10835979 A JP10835979 A JP 10835979A JP S5632751 A JPS5632751 A JP S5632751A
Authority
JP
Japan
Prior art keywords
glass
passivation
zno
protective film
temperature
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10835979A
Other languages
Japanese (ja)
Other versions
JPS6031104B2 (en
Inventor
Katsuhiro Ono
Reiji Okamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP54108359A priority Critical patent/JPS6031104B2/en
Publication of JPS5632751A publication Critical patent/JPS5632751A/en
Publication of JPS6031104B2 publication Critical patent/JPS6031104B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Glass Compositions (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE:To obtain a glass protective film having small heat expansion coefficient and large insulation resistance by employing ZnO, B2O3 and V2O5 specified in composition as glass for the passivation of an Si element. CONSTITUTION:58-67mol% ZnO, 15-23mol% B2O3, and 10-27mol% V2O5 are used as glass for passivation of the Si element. That is, the ingradients thus weighed are sufficiently mixed by a dry mixing process, the mixture is filled in a Pt crucible, and is, in order to prevent the reduction of the V2O5, heated at 1,200 deg.C for 3hr in oxide atmosphere including the O2. Thereafter, this molten mixture is flowed onto a steel plate of room temperature, the obtained crystallizable glass is pulverized as glass of ZnO-B2O3-V2O5, is thereafter screened, and glass for passivation is thus formed. In this manner the temperature at the time of forming a protective film can be less than the alloying temperature of aluminum electrode with Si, the production process can be simplified, and there can further be formed preferable characteristic protective film.
JP54108359A 1979-08-24 1979-08-24 Glass for silicon semiconductor device packaging Expired JPS6031104B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP54108359A JPS6031104B2 (en) 1979-08-24 1979-08-24 Glass for silicon semiconductor device packaging

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP54108359A JPS6031104B2 (en) 1979-08-24 1979-08-24 Glass for silicon semiconductor device packaging

Publications (2)

Publication Number Publication Date
JPS5632751A true JPS5632751A (en) 1981-04-02
JPS6031104B2 JPS6031104B2 (en) 1985-07-20

Family

ID=14482723

Family Applications (1)

Application Number Title Priority Date Filing Date
JP54108359A Expired JPS6031104B2 (en) 1979-08-24 1979-08-24 Glass for silicon semiconductor device packaging

Country Status (1)

Country Link
JP (1) JPS6031104B2 (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6171966U (en) * 1984-10-16 1986-05-16
JPS63193468A (en) * 1987-02-04 1988-08-10 菱星電装株式会社 Flat cable connecting terminal
CN104973785A (en) * 2014-04-03 2015-10-14 博思株式会社 Glass Frit Using Glass Powder With Low Melting Point And Crystalline Ceramic Filler With Low Expansion And Paste Comprising The Same
JPWO2014014113A1 (en) * 2012-07-19 2016-07-07 日立化成株式会社 SOLAR CELL DEVICE, ITS MANUFACTURING METHOD, AND SOLAR CELL MODULE
JPWO2014014112A1 (en) * 2012-07-19 2016-07-07 日立化成株式会社 SOLAR CELL DEVICE, ITS MANUFACTURING METHOD, AND SOLAR CELL MODULE

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6171966U (en) * 1984-10-16 1986-05-16
JPH0314780Y2 (en) * 1984-10-16 1991-04-02
JPS63193468A (en) * 1987-02-04 1988-08-10 菱星電装株式会社 Flat cable connecting terminal
JPWO2014014113A1 (en) * 2012-07-19 2016-07-07 日立化成株式会社 SOLAR CELL DEVICE, ITS MANUFACTURING METHOD, AND SOLAR CELL MODULE
JPWO2014014112A1 (en) * 2012-07-19 2016-07-07 日立化成株式会社 SOLAR CELL DEVICE, ITS MANUFACTURING METHOD, AND SOLAR CELL MODULE
CN104973785A (en) * 2014-04-03 2015-10-14 博思株式会社 Glass Frit Using Glass Powder With Low Melting Point And Crystalline Ceramic Filler With Low Expansion And Paste Comprising The Same
CN104973785B (en) * 2014-04-03 2018-03-13 博思株式会社 Low-melting glass material and the slurry for including the low-melting glass material

Also Published As

Publication number Publication date
JPS6031104B2 (en) 1985-07-20

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