JP5216871B2 - インプリント・リソグラフィにおけるはみ出し低減 - Google Patents
インプリント・リソグラフィにおけるはみ出し低減 Download PDFInfo
- Publication number
- JP5216871B2 JP5216871B2 JP2010545889A JP2010545889A JP5216871B2 JP 5216871 B2 JP5216871 B2 JP 5216871B2 JP 2010545889 A JP2010545889 A JP 2010545889A JP 2010545889 A JP2010545889 A JP 2010545889A JP 5216871 B2 JP5216871 B2 JP 5216871B2
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- polymerizable material
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- 238000001459 lithography Methods 0.000 title claims description 25
- 230000009467 reduction Effects 0.000 title description 2
- 239000000463 material Substances 0.000 claims description 92
- 239000000758 substrate Substances 0.000 claims description 82
- 238000000034 method Methods 0.000 claims description 42
- 238000000059 patterning Methods 0.000 claims description 7
- 230000000737 periodic effect Effects 0.000 claims 2
- 238000001914 filtration Methods 0.000 description 17
- 230000015572 biosynthetic process Effects 0.000 description 15
- 239000012530 fluid Substances 0.000 description 13
- 230000000873 masking effect Effects 0.000 description 10
- 238000003491 array Methods 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 230000000903 blocking effect Effects 0.000 description 4
- 238000013461 design Methods 0.000 description 4
- 239000010408 film Substances 0.000 description 4
- 238000009825 accumulation Methods 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 230000004044 response Effects 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 230000007480 spreading Effects 0.000 description 2
- 238000003892 spreading Methods 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000003618 dip coating Methods 0.000 description 1
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 1
- 238000000203 droplet dispensing Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 229920002313 fluoropolymer Polymers 0.000 description 1
- 239000005350 fused silica glass Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- 230000037361 pathway Effects 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
Images
Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03C—PHOTOSENSITIVE MATERIALS FOR PHOTOGRAPHIC PURPOSES; PHOTOGRAPHIC PROCESSES, e.g. CINE, X-RAY, COLOUR, STEREO-PHOTOGRAPHIC PROCESSES; AUXILIARY PROCESSES IN PHOTOGRAPHY
- G03C5/00—Photographic processes or agents therefor; Regeneration of such processing agents
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D5/00—Processes for applying liquids or other fluent materials to surfaces to obtain special surface effects, finishes or structures
- B05D5/005—Repairing damaged coatings
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C59/00—Surface shaping of articles, e.g. embossing; Apparatus therefor
- B29C59/02—Surface shaping of articles, e.g. embossing; Apparatus therefor by mechanical means, e.g. pressing
- B29C59/026—Surface shaping of articles, e.g. embossing; Apparatus therefor by mechanical means, e.g. pressing of layered or coated substantially flat surfaces
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Nanotechnology (AREA)
- Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Theoretical Computer Science (AREA)
- Mathematical Physics (AREA)
- Mechanical Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Shaping Of Tube Ends By Bending Or Straightening (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Micromachines (AREA)
Applications Claiming Priority (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US2715308P | 2008-02-08 | 2008-02-08 | |
| US61/027,153 | 2008-02-08 | ||
| US9409208P | 2008-09-04 | 2008-09-04 | |
| US61/094,092 | 2008-09-04 | ||
| US12/367,079 | 2009-02-06 | ||
| US12/367,079 US8361371B2 (en) | 2008-02-08 | 2009-02-06 | Extrusion reduction in imprint lithography |
| PCT/US2009/000803 WO2009099666A1 (en) | 2008-02-08 | 2009-02-09 | Extrusion reduction in imprint lithography |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2011521438A JP2011521438A (ja) | 2011-07-21 |
| JP2011521438A5 JP2011521438A5 (enExample) | 2012-03-22 |
| JP5216871B2 true JP5216871B2 (ja) | 2013-06-19 |
Family
ID=40938224
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2010545889A Active JP5216871B2 (ja) | 2008-02-08 | 2009-02-09 | インプリント・リソグラフィにおけるはみ出し低減 |
Country Status (7)
| Country | Link |
|---|---|
| US (2) | US8361371B2 (enExample) |
| EP (1) | EP2240826A4 (enExample) |
| JP (1) | JP5216871B2 (enExample) |
| KR (3) | KR102065400B1 (enExample) |
| CN (1) | CN101939704B (enExample) |
| TW (1) | TWI430015B (enExample) |
| WO (1) | WO2009099666A1 (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10118317B2 (en) | 2015-05-27 | 2018-11-06 | Toshiba Memory Corporation | Template and pattern formation method |
Families Citing this family (44)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2150398A2 (en) * | 2007-04-23 | 2010-02-10 | Tessera North America, Inc. | Mass production of micro-optical devices, corresponding tools, and resultant structures |
| JP5238742B2 (ja) * | 2010-03-19 | 2013-07-17 | 株式会社東芝 | 加工方法および加工装置 |
| JP5836652B2 (ja) | 2011-06-10 | 2015-12-24 | キヤノン株式会社 | インプリント方法、インプリント装置及び物品の製造方法 |
| JP5906598B2 (ja) * | 2011-08-03 | 2016-04-20 | 大日本印刷株式会社 | 半導体インプリント用テンプレート |
| JP2013038117A (ja) * | 2011-08-04 | 2013-02-21 | Jx Nippon Oil & Energy Corp | 微細パターンを転写するための転写ヘッド及びそれを用いた微細パターンの形成方法 |
| JP6200135B2 (ja) * | 2012-07-24 | 2017-09-20 | キヤノン株式会社 | インプリント装置、インプリント方法、および、物品製造方法 |
| US20140205702A1 (en) * | 2013-01-24 | 2014-07-24 | Kabushiki Kaisha Toshiba | Template, manufacturing method of the template, and position measuring method in the template |
| US20140209567A1 (en) * | 2013-01-29 | 2014-07-31 | Kabushiki Kaisha Toshiba | Template, manufacturing method of the template, and strain measuring method in the template |
| JP5851442B2 (ja) * | 2013-03-25 | 2016-02-03 | 株式会社東芝 | モールド及びその製造方法 |
| JP6361238B2 (ja) * | 2013-04-23 | 2018-07-25 | 大日本印刷株式会社 | インプリント用モールドおよびインプリント方法 |
| FR3010829B1 (fr) * | 2013-09-19 | 2017-01-27 | St Microelectronics Sa | Procede de realisation d'un filtre optique au sein d'un circuit integre, et circuit integre correspondant |
| WO2015089158A1 (en) * | 2013-12-10 | 2015-06-18 | Canon Nanotechnologies, Inc. | Imprint lithography template and method for zero-gap imprinting |
| US10265724B2 (en) * | 2014-04-01 | 2019-04-23 | Dai Nippon Printing Co., Ltd. | Imprint mold and imprint method |
| US10211051B2 (en) | 2015-11-13 | 2019-02-19 | Canon Kabushiki Kaisha | Method of reverse tone patterning |
| JP6571028B2 (ja) * | 2016-03-08 | 2019-09-04 | 東芝メモリ株式会社 | パターン形成方法 |
| US10035296B2 (en) | 2016-10-13 | 2018-07-31 | Canon Kabushiki Kaisha | Methods for controlling spread of imprint material |
| US10627715B2 (en) | 2016-10-31 | 2020-04-21 | Canon Kabushiki Kaisha | Method for separating a nanoimprint template from a substrate |
| US10549313B2 (en) | 2016-10-31 | 2020-02-04 | Canon Kabushiki Kaisha | Edge field imprint lithography |
| JP7027099B2 (ja) * | 2017-09-29 | 2022-03-01 | キヤノン株式会社 | インプリント装置及び物品の製造方法 |
| WO2019078060A1 (ja) * | 2017-10-17 | 2019-04-25 | キヤノン株式会社 | インプリント装置、及び、物品の製造方法 |
| JP6686090B2 (ja) * | 2017-10-23 | 2020-04-22 | キヤノン株式会社 | インプリント装置及び物品の製造方法 |
| JP6650980B2 (ja) * | 2017-10-17 | 2020-02-19 | キヤノン株式会社 | インプリント装置、及び、物品の製造方法 |
| CN111247623B (zh) * | 2017-10-17 | 2024-03-08 | 佳能株式会社 | 压印装置和物品制造方法 |
| CN115257026A (zh) * | 2017-10-17 | 2022-11-01 | 奇跃公司 | 用于铸造聚合物产品的方法和装置 |
| US10663869B2 (en) * | 2017-12-11 | 2020-05-26 | Canon Kabushiki Kaisha | Imprint system and imprinting process with spatially non-uniform illumination |
| JP7030533B2 (ja) * | 2018-01-15 | 2022-03-07 | キオクシア株式会社 | インプリント装置、インプリント方法、及び半導体装置の製造方法 |
| US11194247B2 (en) | 2018-01-31 | 2021-12-07 | Canon Kabushiki Kaisha | Extrusion control by capillary force reduction |
| US10948818B2 (en) | 2018-03-19 | 2021-03-16 | Applied Materials, Inc. | Methods and apparatus for creating a large area imprint without a seam |
| US10976657B2 (en) | 2018-08-31 | 2021-04-13 | Canon Kabushiki Kaisha | System and method for illuminating edges of an imprint field with a gradient dosage |
| JP6593504B2 (ja) * | 2018-09-05 | 2019-10-23 | 大日本印刷株式会社 | インプリントモールド、インプリントモールド用ブランクス、並びにインプリントモールド用基板の製造方法及びインプリントモールドの製造方法 |
| US11281095B2 (en) * | 2018-12-05 | 2022-03-22 | Canon Kabushiki Kaisha | Frame curing template and system and method of using the frame curing template |
| JP2020096138A (ja) * | 2018-12-14 | 2020-06-18 | キヤノン株式会社 | インプリント装置、情報処理装置及び物品の製造方法 |
| US10901327B2 (en) * | 2018-12-20 | 2021-01-26 | Canon Kabushiki Kaisha | Automatic defect analyzer for nanoimprint lithography using image analysis |
| JP7237646B2 (ja) * | 2019-02-26 | 2023-03-13 | キヤノン株式会社 | インプリント方法、インプリント装置、および物品の製造方法 |
| JP7267801B2 (ja) | 2019-03-26 | 2023-05-02 | キヤノン株式会社 | インプリント装置、インプリント方法、および物品の製造方法 |
| JP7327973B2 (ja) * | 2019-03-29 | 2023-08-16 | キヤノン株式会社 | インプリント装置、インプリント方法、および物品の製造方法 |
| JP2020179370A (ja) * | 2019-04-26 | 2020-11-05 | キヤノン株式会社 | 吐出材吐出装置、およびインプリント装置 |
| US11181819B2 (en) * | 2019-05-31 | 2021-11-23 | Canon Kabushiki Kaisha | Frame curing method for extrusion control |
| US11327409B2 (en) | 2019-10-23 | 2022-05-10 | Canon Kabushiki Kaisha | Systems and methods for curing an imprinted field |
| US11429022B2 (en) | 2019-10-23 | 2022-08-30 | Canon Kabushiki Kaisha | Systems and methods for curing a shaped film |
| JP7379091B2 (ja) | 2019-10-30 | 2023-11-14 | キヤノン株式会社 | インプリント装置、インプリント方法、及び物品の製造方法 |
| US11366384B2 (en) | 2019-12-18 | 2022-06-21 | Canon Kabushiki Kaisha | Nanoimprint lithography system and method for adjusting a radiation pattern that compensates for slippage of a template |
| JP7433949B2 (ja) * | 2020-02-06 | 2024-02-20 | キヤノン株式会社 | インプリント装置、インプリント方法及び物品の製造方法 |
| US11747731B2 (en) | 2020-11-20 | 2023-09-05 | Canon Kabishiki Kaisha | Curing a shaped film using multiple images of a spatial light modulator |
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2009
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- 2009-02-09 CN CN200980104592.9A patent/CN101939704B/zh active Active
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- 2009-02-09 TW TW098104081A patent/TWI430015B/zh active
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- 2009-02-09 KR KR1020197030480A patent/KR102171030B1/ko active Active
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10118317B2 (en) | 2015-05-27 | 2018-11-06 | Toshiba Memory Corporation | Template and pattern formation method |
Also Published As
| Publication number | Publication date |
|---|---|
| US20130241109A1 (en) | 2013-09-19 |
| TW200938949A (en) | 2009-09-16 |
| CN101939704A (zh) | 2011-01-05 |
| KR102065400B1 (ko) | 2020-01-13 |
| US8361371B2 (en) | 2013-01-29 |
| US20090200710A1 (en) | 2009-08-13 |
| KR102171030B1 (ko) | 2020-10-28 |
| KR20160054631A (ko) | 2016-05-16 |
| TWI430015B (zh) | 2014-03-11 |
| WO2009099666A1 (en) | 2009-08-13 |
| JP2011521438A (ja) | 2011-07-21 |
| US8641958B2 (en) | 2014-02-04 |
| KR20100123698A (ko) | 2010-11-24 |
| EP2240826A4 (en) | 2012-08-01 |
| CN101939704B (zh) | 2014-03-12 |
| KR20190120443A (ko) | 2019-10-23 |
| EP2240826A1 (en) | 2010-10-20 |
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