TWI430015B - 銘印方法及圖案化方法 - Google Patents

銘印方法及圖案化方法 Download PDF

Info

Publication number
TWI430015B
TWI430015B TW098104081A TW98104081A TWI430015B TW I430015 B TWI430015 B TW I430015B TW 098104081 A TW098104081 A TW 098104081A TW 98104081 A TW98104081 A TW 98104081A TW I430015 B TWI430015 B TW I430015B
Authority
TW
Taiwan
Prior art keywords
energy
platform
polymerizable material
substrate
wavelength
Prior art date
Application number
TW098104081A
Other languages
English (en)
Chinese (zh)
Other versions
TW200938949A (en
Inventor
尼耶茲 庫斯納迪諾夫
克里斯多佛Ｅ 強尼斯
約瑟芬Ｇ 普瑞茲
德威恩Ｌ 拉布拉克
伊恩Ｍ 麥馬金
Original Assignee
分子壓模公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 分子壓模公司 filed Critical 分子壓模公司
Publication of TW200938949A publication Critical patent/TW200938949A/zh
Application granted granted Critical
Publication of TWI430015B publication Critical patent/TWI430015B/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03C—PHOTOSENSITIVE MATERIALS FOR PHOTOGRAPHIC PURPOSES; PHOTOGRAPHIC PROCESSES, e.g. CINE, X-RAY, COLOUR, STEREO-PHOTOGRAPHIC PROCESSES; AUXILIARY PROCESSES IN PHOTOGRAPHY
    • G03C5/00—Photographic processes or agents therefor; Regeneration of such processing agents
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C59/00—Surface shaping of articles, e.g. embossing; Apparatus therefor
    • B29C59/02—Surface shaping of articles, e.g. embossing; Apparatus therefor by mechanical means, e.g. pressing
    • B29C59/026—Surface shaping of articles, e.g. embossing; Apparatus therefor by mechanical means, e.g. pressing of layered or coated substantially flat surfaces
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D5/00—Processes for applying liquids or other fluent materials to surfaces to obtain special surface effects, finishes or structures
    • B05D5/005—Repairing damaged coatings
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Shaping Of Tube Ends By Bending Or Straightening (AREA)
  • Micromachines (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
TW098104081A 2008-02-08 2009-02-09 銘印方法及圖案化方法 TWI430015B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US2715308P 2008-02-08 2008-02-08
US9409208P 2008-09-04 2008-09-04

Publications (2)

Publication Number Publication Date
TW200938949A TW200938949A (en) 2009-09-16
TWI430015B true TWI430015B (zh) 2014-03-11

Family

ID=40938224

Family Applications (1)

Application Number Title Priority Date Filing Date
TW098104081A TWI430015B (zh) 2008-02-08 2009-02-09 銘印方法及圖案化方法

Country Status (7)

Country Link
US (2) US8361371B2 (enExample)
EP (1) EP2240826A4 (enExample)
JP (1) JP5216871B2 (enExample)
KR (3) KR20100123698A (enExample)
CN (1) CN101939704B (enExample)
TW (1) TWI430015B (enExample)
WO (1) WO2009099666A1 (enExample)

Families Citing this family (45)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8303866B2 (en) * 2007-04-23 2012-11-06 Digitaloptics Corporation East Mass production of micro-optical devices, corresponding tools, and resultant structures
JP5238742B2 (ja) * 2010-03-19 2013-07-17 株式会社東芝 加工方法および加工装置
JP5836652B2 (ja) 2011-06-10 2015-12-24 キヤノン株式会社 インプリント方法、インプリント装置及び物品の製造方法
JP5906598B2 (ja) * 2011-08-03 2016-04-20 大日本印刷株式会社 半導体インプリント用テンプレート
JP2013038117A (ja) * 2011-08-04 2013-02-21 Jx Nippon Oil & Energy Corp 微細パターンを転写するための転写ヘッド及びそれを用いた微細パターンの形成方法
JP6200135B2 (ja) * 2012-07-24 2017-09-20 キヤノン株式会社 インプリント装置、インプリント方法、および、物品製造方法
US20140205702A1 (en) * 2013-01-24 2014-07-24 Kabushiki Kaisha Toshiba Template, manufacturing method of the template, and position measuring method in the template
US20140209567A1 (en) * 2013-01-29 2014-07-31 Kabushiki Kaisha Toshiba Template, manufacturing method of the template, and strain measuring method in the template
JP5851442B2 (ja) * 2013-03-25 2016-02-03 株式会社東芝 モールド及びその製造方法
JP6361238B2 (ja) * 2013-04-23 2018-07-25 大日本印刷株式会社 インプリント用モールドおよびインプリント方法
FR3010829B1 (fr) * 2013-09-19 2017-01-27 St Microelectronics Sa Procede de realisation d'un filtre optique au sein d'un circuit integre, et circuit integre correspondant
KR102241025B1 (ko) * 2013-12-10 2021-04-16 캐논 나노테크놀로지즈 인코퍼레이티드 임프린트 리소그래피 주형 및 제로-갭 임프린팅 방법
WO2015151323A1 (ja) * 2014-04-01 2015-10-08 大日本印刷株式会社 インプリント用モールドおよびインプリント方法
JP6448469B2 (ja) 2015-05-27 2019-01-09 東芝メモリ株式会社 テンプレートおよびパターン形成方法
US10211051B2 (en) 2015-11-13 2019-02-19 Canon Kabushiki Kaisha Method of reverse tone patterning
JP6571028B2 (ja) * 2016-03-08 2019-09-04 東芝メモリ株式会社 パターン形成方法
US10035296B2 (en) 2016-10-13 2018-07-31 Canon Kabushiki Kaisha Methods for controlling spread of imprint material
US10627715B2 (en) 2016-10-31 2020-04-21 Canon Kabushiki Kaisha Method for separating a nanoimprint template from a substrate
US10549313B2 (en) 2016-10-31 2020-02-04 Canon Kabushiki Kaisha Edge field imprint lithography
JP7027099B2 (ja) * 2017-09-29 2022-03-01 キヤノン株式会社 インプリント装置及び物品の製造方法
JP6650980B2 (ja) * 2017-10-17 2020-02-19 キヤノン株式会社 インプリント装置、及び、物品の製造方法
JP6686090B2 (ja) * 2017-10-23 2020-04-22 キヤノン株式会社 インプリント装置及び物品の製造方法
CA3076669A1 (en) 2017-10-17 2019-04-25 Magic Leap, Inc. Methods and apparatuses for casting polymer products
WO2019078060A1 (ja) * 2017-10-17 2019-04-25 キヤノン株式会社 インプリント装置、及び、物品の製造方法
KR102426957B1 (ko) * 2017-10-17 2022-08-01 캐논 가부시끼가이샤 임프린트 장치, 및 물품의 제조 방법
US10663869B2 (en) * 2017-12-11 2020-05-26 Canon Kabushiki Kaisha Imprint system and imprinting process with spatially non-uniform illumination
JP7030533B2 (ja) * 2018-01-15 2022-03-07 キオクシア株式会社 インプリント装置、インプリント方法、及び半導体装置の製造方法
US11194247B2 (en) 2018-01-31 2021-12-07 Canon Kabushiki Kaisha Extrusion control by capillary force reduction
US10948818B2 (en) * 2018-03-19 2021-03-16 Applied Materials, Inc. Methods and apparatus for creating a large area imprint without a seam
US10976657B2 (en) 2018-08-31 2021-04-13 Canon Kabushiki Kaisha System and method for illuminating edges of an imprint field with a gradient dosage
JP6593504B2 (ja) * 2018-09-05 2019-10-23 大日本印刷株式会社 インプリントモールド、インプリントモールド用ブランクス、並びにインプリントモールド用基板の製造方法及びインプリントモールドの製造方法
US11281095B2 (en) 2018-12-05 2022-03-22 Canon Kabushiki Kaisha Frame curing template and system and method of using the frame curing template
JP2020096138A (ja) * 2018-12-14 2020-06-18 キヤノン株式会社 インプリント装置、情報処理装置及び物品の製造方法
US10901327B2 (en) * 2018-12-20 2021-01-26 Canon Kabushiki Kaisha Automatic defect analyzer for nanoimprint lithography using image analysis
JP7237646B2 (ja) * 2019-02-26 2023-03-13 キヤノン株式会社 インプリント方法、インプリント装置、および物品の製造方法
JP7267801B2 (ja) 2019-03-26 2023-05-02 キヤノン株式会社 インプリント装置、インプリント方法、および物品の製造方法
JP7327973B2 (ja) * 2019-03-29 2023-08-16 キヤノン株式会社 インプリント装置、インプリント方法、および物品の製造方法
JP2020179370A (ja) * 2019-04-26 2020-11-05 キヤノン株式会社 吐出材吐出装置、およびインプリント装置
US11181819B2 (en) * 2019-05-31 2021-11-23 Canon Kabushiki Kaisha Frame curing method for extrusion control
US11429022B2 (en) 2019-10-23 2022-08-30 Canon Kabushiki Kaisha Systems and methods for curing a shaped film
US11327409B2 (en) 2019-10-23 2022-05-10 Canon Kabushiki Kaisha Systems and methods for curing an imprinted field
JP7379091B2 (ja) 2019-10-30 2023-11-14 キヤノン株式会社 インプリント装置、インプリント方法、及び物品の製造方法
US11366384B2 (en) 2019-12-18 2022-06-21 Canon Kabushiki Kaisha Nanoimprint lithography system and method for adjusting a radiation pattern that compensates for slippage of a template
JP7433949B2 (ja) * 2020-02-06 2024-02-20 キヤノン株式会社 インプリント装置、インプリント方法及び物品の製造方法
US11747731B2 (en) 2020-11-20 2023-09-05 Canon Kabishiki Kaisha Curing a shaped film using multiple images of a spatial light modulator

Family Cites Families (65)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2701765B2 (ja) * 1994-12-28 1998-01-21 日本電気株式会社 半導体装置の製造方法
EP1001311A1 (en) 1998-11-16 2000-05-17 International Business Machines Corporation Patterning device
US6334960B1 (en) * 1999-03-11 2002-01-01 Board Of Regents, The University Of Texas System Step and flash imprint lithography
SG142150A1 (en) * 2000-07-16 2008-05-28 Univ Texas High-resolution overlay alignment systems for imprint lithography
CN1262883C (zh) * 2000-07-17 2006-07-05 得克萨斯州大学系统董事会 影印用于平版印刷工艺中的自动化液体分配的方法和系统
US20050160011A1 (en) * 2004-01-20 2005-07-21 Molecular Imprints, Inc. Method for concurrently employing differing materials to form a layer on a substrate
AU2001297642A1 (en) * 2000-10-12 2002-09-04 Board Of Regents, The University Of Texas System Template for room temperature, low pressure micro- and nano-imprint lithography
US6653030B2 (en) 2002-01-23 2003-11-25 Hewlett-Packard Development Company, L.P. Optical-mechanical feature fabrication during manufacture of semiconductors and other micro-devices and nano-devices that include micron and sub-micron features
US6926929B2 (en) * 2002-07-09 2005-08-09 Molecular Imprints, Inc. System and method for dispensing liquids
US7019819B2 (en) * 2002-11-13 2006-03-28 Molecular Imprints, Inc. Chucking system for modulating shapes of substrates
US7442336B2 (en) * 2003-08-21 2008-10-28 Molecular Imprints, Inc. Capillary imprinting technique
US6932934B2 (en) * 2002-07-11 2005-08-23 Molecular Imprints, Inc. Formation of discontinuous films during an imprint lithography process
US6900881B2 (en) * 2002-07-11 2005-05-31 Molecular Imprints, Inc. Step and repeat imprint lithography systems
US7077992B2 (en) * 2002-07-11 2006-07-18 Molecular Imprints, Inc. Step and repeat imprint lithography processes
US7027156B2 (en) * 2002-08-01 2006-04-11 Molecular Imprints, Inc. Scatterometry alignment for imprint lithography
US6916584B2 (en) * 2002-08-01 2005-07-12 Molecular Imprints, Inc. Alignment methods for imprint lithography
US7019656B2 (en) * 2002-08-06 2006-03-28 Kendro Laboratory Products, Inc. Empty gas supply tank pending warning
US7071088B2 (en) * 2002-08-23 2006-07-04 Molecular Imprints, Inc. Method for fabricating bulbous-shaped vias
US6936194B2 (en) * 2002-09-05 2005-08-30 Molecular Imprints, Inc. Functional patterning material for imprint lithography processes
DE60310443T2 (de) * 2002-09-09 2007-10-11 International Business Machines Corp. Druckverfahren mit gummistempel
US20040065252A1 (en) * 2002-10-04 2004-04-08 Sreenivasan Sidlgata V. Method of forming a layer on a substrate to facilitate fabrication of metrology standards
US6980282B2 (en) * 2002-12-11 2005-12-27 Molecular Imprints, Inc. Method for modulating shapes of substrates
US6871558B2 (en) * 2002-12-12 2005-03-29 Molecular Imprints, Inc. Method for determining characteristics of substrate employing fluid geometries
US6943117B2 (en) * 2003-03-27 2005-09-13 Korea Institute Of Machinery & Materials UV nanoimprint lithography process using elementwise embossed stamp and selectively additive pressurization
US6777147B1 (en) * 2003-05-21 2004-08-17 International Business Machines Corporation Method for evaluating the effects of multiple exposure processes in lithography
TWI228638B (en) * 2003-06-10 2005-03-01 Ind Tech Res Inst Method for and apparatus for bonding patterned imprint to a substrate by adhering means
US7136150B2 (en) * 2003-09-25 2006-11-14 Molecular Imprints, Inc. Imprint lithography template having opaque alignment marks
US7090716B2 (en) * 2003-10-02 2006-08-15 Molecular Imprints, Inc. Single phase fluid imprint lithography method
US8211214B2 (en) * 2003-10-02 2012-07-03 Molecular Imprints, Inc. Single phase fluid imprint lithography method
US20050084804A1 (en) * 2003-10-16 2005-04-21 Molecular Imprints, Inc. Low surface energy templates
US20050098534A1 (en) 2003-11-12 2005-05-12 Molecular Imprints, Inc. Formation of conductive templates employing indium tin oxide
US20050106321A1 (en) * 2003-11-14 2005-05-19 Molecular Imprints, Inc. Dispense geometery to achieve high-speed filling and throughput
US20050189676A1 (en) * 2004-02-27 2005-09-01 Molecular Imprints, Inc. Full-wafer or large area imprinting with multiple separated sub-fields for high throughput lithography
JP4481698B2 (ja) * 2004-03-29 2010-06-16 キヤノン株式会社 加工装置
JP2005294468A (ja) 2004-03-31 2005-10-20 Canon Inc 位置決め装置、露光装置及びデバイス製造方法
US7140861B2 (en) * 2004-04-27 2006-11-28 Molecular Imprints, Inc. Compliant hard template for UV imprinting
US20050276919A1 (en) * 2004-06-01 2005-12-15 Molecular Imprints, Inc. Method for dispensing a fluid on a substrate
KR101193918B1 (ko) * 2004-06-03 2012-10-29 몰레큘러 임프린츠 인코퍼레이티드 나노-스케일 제조공정을 위한 유체 배분방법과 필요에 따른액적 배분방법
US20050270516A1 (en) * 2004-06-03 2005-12-08 Molecular Imprints, Inc. System for magnification and distortion correction during nano-scale manufacturing
US20070228593A1 (en) * 2006-04-03 2007-10-04 Molecular Imprints, Inc. Residual Layer Thickness Measurement and Correction
US7309225B2 (en) * 2004-08-13 2007-12-18 Molecular Imprints, Inc. Moat system for an imprint lithography template
US7547504B2 (en) * 2004-09-21 2009-06-16 Molecular Imprints, Inc. Pattern reversal employing thick residual layers
US20060062922A1 (en) * 2004-09-23 2006-03-23 Molecular Imprints, Inc. Polymerization technique to attenuate oxygen inhibition of solidification of liquids and composition therefor
US7244386B2 (en) * 2004-09-27 2007-07-17 Molecular Imprints, Inc. Method of compensating for a volumetric shrinkage of a material disposed upon a substrate to form a substantially planar structure therefrom
EP1825502A4 (en) * 2004-12-01 2008-01-23 Molecular Imprints Inc EXPOSURE METHOD FOR HEAT MANAGEMENT FOR IMPRINT LITHOGRAPHIC PROCESSES
US7811505B2 (en) * 2004-12-07 2010-10-12 Molecular Imprints, Inc. Method for fast filling of templates for imprint lithography using on template dispense
US20060177532A1 (en) * 2005-02-04 2006-08-10 Molecular Imprints, Inc. Imprint lithography method to control extrusion of a liquid from a desired region on a substrate
US20060177535A1 (en) * 2005-02-04 2006-08-10 Molecular Imprints, Inc. Imprint lithography template to facilitate control of liquid movement
US7762186B2 (en) * 2005-04-19 2010-07-27 Asml Netherlands B.V. Imprint lithography
US20070228608A1 (en) * 2006-04-03 2007-10-04 Molecular Imprints, Inc. Preserving Filled Features when Vacuum Wiping
US20060266916A1 (en) * 2005-05-25 2006-11-30 Molecular Imprints, Inc. Imprint lithography template having a coating to reflect and/or absorb actinic energy
JP4290177B2 (ja) * 2005-06-08 2009-07-01 キヤノン株式会社 モールド、アライメント方法、パターン形成装置、パターン転写装置、及びチップの製造方法
JP2007027361A (ja) * 2005-07-15 2007-02-01 Toppan Printing Co Ltd インプリント用モールド
US7316554B2 (en) * 2005-09-21 2008-01-08 Molecular Imprints, Inc. System to control an atmosphere between a body and a substrate
JP2007109986A (ja) * 2005-10-14 2007-04-26 Victor Co Of Japan Ltd 微細パターンの形成方法
US7906058B2 (en) * 2005-12-01 2011-03-15 Molecular Imprints, Inc. Bifurcated contact printing technique
US7670530B2 (en) 2006-01-20 2010-03-02 Molecular Imprints, Inc. Patterning substrates employing multiple chucks
US7517211B2 (en) * 2005-12-21 2009-04-14 Asml Netherlands B.V. Imprint lithography
US8142850B2 (en) * 2006-04-03 2012-03-27 Molecular Imprints, Inc. Patterning a plurality of fields on a substrate to compensate for differing evaporation times
US8850980B2 (en) * 2006-04-03 2014-10-07 Canon Nanotechnologies, Inc. Tessellated patterns in imprint lithography
US7780893B2 (en) * 2006-04-03 2010-08-24 Molecular Imprints, Inc. Method of concurrently patterning a substrate having a plurality of fields and a plurality of alignment marks
US7462028B2 (en) * 2006-04-03 2008-12-09 Molecular Imprints, Inc. Partial vacuum environment imprinting
US20080303187A1 (en) * 2006-12-29 2008-12-11 Molecular Imprints, Inc. Imprint Fluid Control
US20090014917A1 (en) * 2007-07-10 2009-01-15 Molecular Imprints, Inc. Drop Pattern Generation for Imprint Lithography
US20090053535A1 (en) * 2007-08-24 2009-02-26 Molecular Imprints, Inc. Reduced Residual Formation in Etched Multi-Layer Stacks

Also Published As

Publication number Publication date
US20130241109A1 (en) 2013-09-19
US20090200710A1 (en) 2009-08-13
JP5216871B2 (ja) 2013-06-19
EP2240826A1 (en) 2010-10-20
KR20190120443A (ko) 2019-10-23
KR20160054631A (ko) 2016-05-16
KR20100123698A (ko) 2010-11-24
KR102171030B1 (ko) 2020-10-28
US8641958B2 (en) 2014-02-04
KR102065400B1 (ko) 2020-01-13
CN101939704B (zh) 2014-03-12
CN101939704A (zh) 2011-01-05
EP2240826A4 (en) 2012-08-01
TW200938949A (en) 2009-09-16
US8361371B2 (en) 2013-01-29
WO2009099666A1 (en) 2009-08-13
JP2011521438A (ja) 2011-07-21

Similar Documents

Publication Publication Date Title
JP5216871B2 (ja) インプリント・リソグラフィにおけるはみ出し低減
KR101095681B1 (ko) 극자외선 리소그래피를 위한 포토마스크 및 그 제조방법
CN1960855B (zh) Uv刻印用的柔顺性的硬质模板
KR102386069B1 (ko) 공간적으로 비균일한 조명을 사용하는 임프린트 시스템 및 임프린팅 프로세스
TWI601624B (zh) 壓印裝置及製造物品的方法
KR20030080183A (ko) 폴리머 내 피쳐 제조 방법 및 광-기계적 패턴 임프린팅마스크
US20070166874A1 (en) Fabrication Method of Nanoimprint Mold Core
JP2003249444A5 (enExample)
JP5942551B2 (ja) ナノインプリント用マスターテンプレート及びレプリカテンプレートの製造方法
US20090001634A1 (en) Fine resist pattern forming method and nanoimprint mold structure
JP2010258326A (ja) ナノインプリント用モールドおよびその製造方法
KR102196382B1 (ko) 임프린트 물질의 확산을 제어하기 위한 방법
KR102247829B1 (ko) 임프린트 템플레이트 복제 프로세스 중에 압출을 제어하기 위한 방법
KR20180116716A (ko) 임프린트 템플레이트 및 임프린트 패턴 형성 방법
US10976657B2 (en) System and method for illuminating edges of an imprint field with a gradient dosage
JP4939994B2 (ja) パターン形成方法及び半導体装置の製造方法
JP6281592B2 (ja) レプリカテンプレートの製造方法
KR20160088209A (ko) 포토리소그래피 방법
JP5916753B2 (ja) ナノインプリントリソグラフィ方法
TWI771111B (zh) 用於半導體微影製程的光罩、製造光罩的方法、以及半導體微影方法
TW202438294A (zh) 圖案設計方法及模板之製造方法
US20120214103A1 (en) Method for fabricating semiconductor devices with fine patterns
US20050221202A1 (en) Wavelength filtering in nanolithography
TWI477893B (zh) 光罩之製造方法
KR20050013781A (ko) 노광 마스크의 제조 방법