KR102065400B1 - 임프린트 리소그래피에서 압출물 감소 - Google Patents

임프린트 리소그래피에서 압출물 감소 Download PDF

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KR102065400B1
KR102065400B1 KR1020167011654A KR20167011654A KR102065400B1 KR 102065400 B1 KR102065400 B1 KR 102065400B1 KR 1020167011654 A KR1020167011654 A KR 1020167011654A KR 20167011654 A KR20167011654 A KR 20167011654A KR 102065400 B1 KR102065400 B1 KR 102065400B1
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mesa
substrate
feature
polymerizable material
template
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KR20160054631A (ko
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니야즈 쿠스나트디노브
크리스토퍼 이. 존스
조셉 지. 페레즈
드웨인 엘. 라브레이크
이안 매튜 맥마킨
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캐논 나노테크놀로지즈 인코퍼레이티드
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03C—PHOTOSENSITIVE MATERIALS FOR PHOTOGRAPHIC PURPOSES; PHOTOGRAPHIC PROCESSES, e.g. CINE, X-RAY, COLOUR, STEREO-PHOTOGRAPHIC PROCESSES; AUXILIARY PROCESSES IN PHOTOGRAPHY
    • G03C5/00—Photographic processes or agents therefor; Regeneration of such processing agents
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D5/00—Processes for applying liquids or other fluent materials to surfaces to obtain special surface effects, finishes or structures
    • B05D5/005—Repairing damaged coatings
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C59/00—Surface shaping of articles, e.g. embossing; Apparatus therefor
    • B29C59/02—Surface shaping of articles, e.g. embossing; Apparatus therefor by mechanical means, e.g. pressing
    • B29C59/026—Surface shaping of articles, e.g. embossing; Apparatus therefor by mechanical means, e.g. pressing of layered or coated substantially flat surfaces
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Mechanical Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Shaping Of Tube Ends By Bending Or Straightening (AREA)
  • Micromachines (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
KR1020167011654A 2008-02-08 2009-02-09 임프린트 리소그래피에서 압출물 감소 Active KR102065400B1 (ko)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
US2715308P 2008-02-08 2008-02-08
US61/027,153 2008-02-08
US9409208P 2008-09-04 2008-09-04
US61/094,092 2008-09-04
US12/367,079 2009-02-06
US12/367,079 US8361371B2 (en) 2008-02-08 2009-02-06 Extrusion reduction in imprint lithography
PCT/US2009/000803 WO2009099666A1 (en) 2008-02-08 2009-02-09 Extrusion reduction in imprint lithography

Related Parent Applications (1)

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KR1020107018535A Division KR20100123698A (ko) 2008-02-08 2009-02-09 임프린트 리소그래피에서 압출물 감소

Related Child Applications (1)

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KR1020197030480A Division KR102171030B1 (ko) 2008-02-08 2009-02-09 임프린트 리소그래피에서 압출물 감소

Publications (2)

Publication Number Publication Date
KR20160054631A KR20160054631A (ko) 2016-05-16
KR102065400B1 true KR102065400B1 (ko) 2020-01-13

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KR1020107018535A Ceased KR20100123698A (ko) 2008-02-08 2009-02-09 임프린트 리소그래피에서 압출물 감소
KR1020167011654A Active KR102065400B1 (ko) 2008-02-08 2009-02-09 임프린트 리소그래피에서 압출물 감소
KR1020197030480A Active KR102171030B1 (ko) 2008-02-08 2009-02-09 임프린트 리소그래피에서 압출물 감소

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Country Status (7)

Country Link
US (2) US8361371B2 (enExample)
EP (1) EP2240826A4 (enExample)
JP (1) JP5216871B2 (enExample)
KR (3) KR20100123698A (enExample)
CN (1) CN101939704B (enExample)
TW (1) TWI430015B (enExample)
WO (1) WO2009099666A1 (enExample)

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EP2240826A4 (en) 2012-08-01
JP2011521438A (ja) 2011-07-21
US8361371B2 (en) 2013-01-29
KR20160054631A (ko) 2016-05-16
US20090200710A1 (en) 2009-08-13
TWI430015B (zh) 2014-03-11
KR102171030B1 (ko) 2020-10-28
CN101939704B (zh) 2014-03-12
CN101939704A (zh) 2011-01-05
JP5216871B2 (ja) 2013-06-19
WO2009099666A1 (en) 2009-08-13
TW200938949A (en) 2009-09-16
KR20190120443A (ko) 2019-10-23
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KR20100123698A (ko) 2010-11-24
US20130241109A1 (en) 2013-09-19

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