Classifications

• • G—PHYSICS
  • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
  • G03C—PHOTOSENSITIVE MATERIALS FOR PHOTOGRAPHIC PURPOSES; PHOTOGRAPHIC PROCESSES, e.g. CINE, X-RAY, COLOUR, STEREO-PHOTOGRAPHIC PROCESSES; AUXILIARY PROCESSES IN PHOTOGRAPHY
  • G03C5/00—Photographic processes or agents therefor; Regeneration of such processing agents
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
  • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
  • B05D5/00—Processes for applying liquids or other fluent materials to surfaces to obtain special surface effects, finishes or structures
  • B05D5/005—Repairing damaged coatings
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
  • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
  • B29C59/00—Surface shaping of articles, e.g. embossing; Apparatus therefor
  • B29C59/02—Surface shaping of articles, e.g. embossing; Apparatus therefor by mechanical means, e.g. pressing
  • B29C59/026—Surface shaping of articles, e.g. embossing; Apparatus therefor by mechanical means, e.g. pressing of layered or coated substantially flat surfaces
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B82—NANOTECHNOLOGY
  • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
  • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B82—NANOTECHNOLOGY
  • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
  • B82Y40/00—Manufacture or treatment of nanostructures
• • G—PHYSICS
  • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
  • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
  • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
  • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
  • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
• • G—PHYSICS
  • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
  • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
  • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
  • G03F7/20—Exposure; Apparatus therefor
  • G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure

Definitions

• An imprint lithography technique disclosed in each of the aforementioned U.S. patent publications and patent includes formation of a relief pattern in a formable (polymerizable) layer and transferring a pattern corresponding to the relief pattern into an underlying substrate.
• the substrate may be coupled to a motion stage to obtain a desired positioning to facilitate the patterning process.
• the patterning process uses a template spaced apart from the substrate and a formable liquid applied between the template and the substrate.
• the formable liquid is solidified to form a rigid layer that has a pattern conforming to a shape of the surface of the template that contacts the formable liquid.
• the template is separated from the rigid layer such that the template and the substrate are spaced apart.
• the substrate and the solidified layer are then subjected to additional processes to transfer a relief image into the substrate that corresponds to the pattern in the solidified layer.
• FIG. 5A and 5B illustrate simplified side view of an exemplary masking system for use in a lithographic system.
• FIG. 6 illustrates a flow chart of an exemplary method for preventing extrusion formation during imprint lithography using a masking system.
• FIG. 7C illustrates a flow chart of an exemplary method for preventing extrusion formation using a filtering system.
• energy 40a passing through mask 102 may reflect and/or diffract as it propagates.
• energy 40a passing through mask 102 may diffract as it propagates the separation distance between mask 102 and template 18.
• Such reflection and/or diffraction may result in blurring.
• projection optics for lithography may be used to reduce or eliminate blurring.
• projection option for 0.5 ⁇ m lithography may be used.
• mask 102 may be placed in close proximity to template 18 to reduce and/or eliminate blurring.
• Filters 132 and 134 may be any suitable filter (e.g., optical filter).
• second filter 134 may be positioned adjacent to template 18.
• band 132 is greater than a length L 4 of second filter 134.
• length L 4 of second filter 134 may be less than length L 3 of first filter 132 creating a band 104b.
• Band 104b may have a width W 2 .
• a minimal width W 2 of band 104b may be between approximately 2-10 ⁇ m. It should be noted that the width w 2 may be larger depending on application and design considerations. [0048] Positioning of the first filter 132 relative to the second filter 134 may create band 104b.
• FIGS. 10A and 10B illustrate an exemplary system 250 to block one or more curved areas 252 of substrate 12 to provide step-to-edge exposure control during edge-field imprinting.
• system 250 includes an electrochromic film 254. At least one region 256 of electrochromic film 254 may turn opaque to energy 40 in response to voltage.
• FIG. 11 illustrates maze pattern 300 having square features 304.
• Square features 304 have a length L 7 (e.g., 2 ⁇ m) a width W 7 (e.g., 2 ⁇ m), and a height h 7 (e.g., 100 nm).
• Features 304 may be distanced apart from other features by a distance d 7 (e.g., 0.8 ⁇ m).
• Features 304 may be aligned as illustrated in FIG. 11A or staggered as illustrated in FIG. 11 B.
• Features may be patterned on substrate 12 using techniques including, but no limited to, imprint lithography,
• fill factor f is a ratio between the total area of features 304 within a portion of maze pattern 300 and the entire area of that portion of maze pattern
• fractal structures 500 may be used in system 10.
• fractal structures 500 may be patterned on template mesa 20 to reduce and/or prevent propagation of polymerizable material 34 during imprinting.
• fractal structures 500 may reduce or increase the total length of the periphery of all the features 502 in the area under consideration for polymerizable material 34, increase surface energy of polymerizable material 34 due to increased/decreased capillary paths, and/or absorb excess volume V of polymerizable material 34 resulting in reduced propagation of polymerizable material 34.
• polymerizable material 34 may have a high surface energy when in contact with fractal structure 500.
• bridges 504 between features 502 of fractal pattern 500 may act as gas barriers.
• propagation of polymerizable material 34 may be reduced.
• reducing the size of features 502 may improve gas trapping.
• fractal pattern 500b of FIG. 17A provides iterations of features 502 with reduced linear sizes towards the center.
• Polymerizable material 34 may fill the smaller areas faster due to stronger capillary forces (e.g. material fills at faster rate in the center region). This may lead to entrapment of gas in the larger areas where polymerizable material 34 may still be flowing.

Landscapes

• Engineering & Computer Science (AREA)
• Physics & Mathematics (AREA)
• Chemical & Material Sciences (AREA)
• Nanotechnology (AREA)
• General Physics & Mathematics (AREA)
• Crystallography & Structural Chemistry (AREA)
• Condensed Matter Physics & Semiconductors (AREA)
• Manufacturing & Machinery (AREA)
• Theoretical Computer Science (AREA)
• Mathematical Physics (AREA)
• Mechanical Engineering (AREA)
• Computer Hardware Design (AREA)
• Microelectronics & Electronic Packaging (AREA)
• Power Engineering (AREA)
• Shaping Of Tube Ends By Bending Or Straightening (AREA)
• Micromachines (AREA)
• Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Priority Applications (5)

Applications Claiming Priority (6)

Publications (1)

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ID=40938224

Family Applications (1)

Country Status (7)

Cited By (6)

Families Citing this family (39)

Citations (3)

Family Cites Families (62)

• 2009
  • 2009-02-06 US US12/367,079 patent/US8361371B2/en active Active
  • 2009-02-09 KR KR1020107018535A patent/KR20100123698A/ko not_active Ceased
  • 2009-02-09 CN CN200980104592.9A patent/CN101939704B/zh active Active
  • 2009-02-09 EP EP09707380A patent/EP2240826A4/en not_active Withdrawn
  • 2009-02-09 KR KR1020167011654A patent/KR102065400B1/ko active Active
  • 2009-02-09 JP JP2010545889A patent/JP5216871B2/ja active Active
  • 2009-02-09 TW TW098104081A patent/TWI430015B/zh active
  • 2009-02-09 KR KR1020197030480A patent/KR102171030B1/ko active Active
  • 2009-02-09 WO PCT/US2009/000803 patent/WO2009099666A1/en not_active Ceased
• 2013
  • 2013-01-17 US US13/743,772 patent/US8641958B2/en active Active

Patent Citations (3)

Non-Patent Citations (1)

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