KR20100123698A - 임프린트 리소그래피에서 압출물 감소 - Google Patents

임프린트 리소그래피에서 압출물 감소 Download PDF

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Publication number
KR20100123698A
KR20100123698A KR1020107018535A KR20107018535A KR20100123698A KR 20100123698 A KR20100123698 A KR 20100123698A KR 1020107018535 A KR1020107018535 A KR 1020107018535A KR 20107018535 A KR20107018535 A KR 20107018535A KR 20100123698 A KR20100123698 A KR 20100123698A
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South Korea
Prior art keywords
energy
substrate
mesa
wavelength
polymerizable material
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Ceased
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KR1020107018535A
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English (en)
Korean (ko)
Inventor
니야즈 쿠스나트디노브
크리스토퍼 이. 존스
조셉 지. 페레즈
드웨인 엘. 라브레이크
이안 매튜 맥마킨
Original Assignee
몰레큘러 임프린츠 인코퍼레이티드
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Publication of KR20100123698A publication Critical patent/KR20100123698A/ko
Ceased legal-status Critical Current

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C59/00—Surface shaping of articles, e.g. embossing; Apparatus therefor
    • B29C59/02—Surface shaping of articles, e.g. embossing; Apparatus therefor by mechanical means, e.g. pressing
    • B29C59/026—Surface shaping of articles, e.g. embossing; Apparatus therefor by mechanical means, e.g. pressing of layered or coated substantially flat surfaces
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03C—PHOTOSENSITIVE MATERIALS FOR PHOTOGRAPHIC PURPOSES; PHOTOGRAPHIC PROCESSES, e.g. CINE, X-RAY, COLOUR, STEREO-PHOTOGRAPHIC PROCESSES; AUXILIARY PROCESSES IN PHOTOGRAPHY
    • G03C5/00—Photographic processes or agents therefor; Regeneration of such processing agents
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D5/00—Processes for applying liquids or other fluent materials to surfaces to obtain special surface effects, finishes or structures
    • B05D5/005—Repairing damaged coatings
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Mechanical Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Shaping Of Tube Ends By Bending Or Straightening (AREA)
  • Micromachines (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
KR1020107018535A 2008-02-08 2009-02-09 임프린트 리소그래피에서 압출물 감소 Ceased KR20100123698A (ko)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
US2715308P 2008-02-08 2008-02-08
US61/027,153 2008-02-08
US9409208P 2008-09-04 2008-09-04
US61/094,092 2008-09-04
US12/367,079 US8361371B2 (en) 2008-02-08 2009-02-06 Extrusion reduction in imprint lithography
US12/367,079 2009-02-06

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020167011654A Division KR102065400B1 (ko) 2008-02-08 2009-02-09 임프린트 리소그래피에서 압출물 감소

Publications (1)

Publication Number Publication Date
KR20100123698A true KR20100123698A (ko) 2010-11-24

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ID=40938224

Family Applications (3)

Application Number Title Priority Date Filing Date
KR1020197030480A Active KR102171030B1 (ko) 2008-02-08 2009-02-09 임프린트 리소그래피에서 압출물 감소
KR1020167011654A Active KR102065400B1 (ko) 2008-02-08 2009-02-09 임프린트 리소그래피에서 압출물 감소
KR1020107018535A Ceased KR20100123698A (ko) 2008-02-08 2009-02-09 임프린트 리소그래피에서 압출물 감소

Family Applications Before (2)

Application Number Title Priority Date Filing Date
KR1020197030480A Active KR102171030B1 (ko) 2008-02-08 2009-02-09 임프린트 리소그래피에서 압출물 감소
KR1020167011654A Active KR102065400B1 (ko) 2008-02-08 2009-02-09 임프린트 리소그래피에서 압출물 감소

Country Status (7)

Country Link
US (2) US8361371B2 (enExample)
EP (1) EP2240826A4 (enExample)
JP (1) JP5216871B2 (enExample)
KR (3) KR102171030B1 (enExample)
CN (1) CN101939704B (enExample)
TW (1) TWI430015B (enExample)
WO (1) WO2009099666A1 (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20200055096A (ko) * 2017-10-17 2020-05-20 캐논 가부시끼가이샤 임프린트 장치, 및 물품의 제조 방법
KR20200121389A (ko) * 2018-03-19 2020-10-23 어플라이드 머티어리얼스, 인코포레이티드 심이 없는 대면적 임프린트를 생성하기 위한 방법들 및 장치
KR20230058550A (ko) * 2017-10-17 2023-05-03 매직 립, 인코포레이티드 중합체 생성물들을 주조하기 위한 방법들 및 장치들
US11904522B2 (en) 2017-09-29 2024-02-20 Canon Kabushiki Kaisha Imprint apparatus and method for manufacturing article

Families Citing this family (41)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2150398A2 (en) * 2007-04-23 2010-02-10 Tessera North America, Inc. Mass production of micro-optical devices, corresponding tools, and resultant structures
JP5238742B2 (ja) * 2010-03-19 2013-07-17 株式会社東芝 加工方法および加工装置
JP5836652B2 (ja) 2011-06-10 2015-12-24 キヤノン株式会社 インプリント方法、インプリント装置及び物品の製造方法
JP5906598B2 (ja) * 2011-08-03 2016-04-20 大日本印刷株式会社 半導体インプリント用テンプレート
JP2013038117A (ja) * 2011-08-04 2013-02-21 Jx Nippon Oil & Energy Corp 微細パターンを転写するための転写ヘッド及びそれを用いた微細パターンの形成方法
JP6200135B2 (ja) * 2012-07-24 2017-09-20 キヤノン株式会社 インプリント装置、インプリント方法、および、物品製造方法
US20140205702A1 (en) * 2013-01-24 2014-07-24 Kabushiki Kaisha Toshiba Template, manufacturing method of the template, and position measuring method in the template
US20140209567A1 (en) * 2013-01-29 2014-07-31 Kabushiki Kaisha Toshiba Template, manufacturing method of the template, and strain measuring method in the template
JP5851442B2 (ja) * 2013-03-25 2016-02-03 株式会社東芝 モールド及びその製造方法
JP6361238B2 (ja) * 2013-04-23 2018-07-25 大日本印刷株式会社 インプリント用モールドおよびインプリント方法
FR3010829B1 (fr) * 2013-09-19 2017-01-27 St Microelectronics Sa Procede de realisation d'un filtre optique au sein d'un circuit integre, et circuit integre correspondant
US10124529B2 (en) * 2013-12-10 2018-11-13 Canon Nanotechnologies, Inc. Imprint lithography template and method for zero-gap imprinting
KR102311479B1 (ko) * 2014-04-01 2021-10-13 다이니폰 인사츠 가부시키가이샤 임프린트용 몰드 및 임프린트 방법
JP6448469B2 (ja) 2015-05-27 2019-01-09 東芝メモリ株式会社 テンプレートおよびパターン形成方法
US10211051B2 (en) 2015-11-13 2019-02-19 Canon Kabushiki Kaisha Method of reverse tone patterning
JP6571028B2 (ja) * 2016-03-08 2019-09-04 東芝メモリ株式会社 パターン形成方法
US10035296B2 (en) 2016-10-13 2018-07-31 Canon Kabushiki Kaisha Methods for controlling spread of imprint material
US10627715B2 (en) 2016-10-31 2020-04-21 Canon Kabushiki Kaisha Method for separating a nanoimprint template from a substrate
US10549313B2 (en) 2016-10-31 2020-02-04 Canon Kabushiki Kaisha Edge field imprint lithography
JP6686090B2 (ja) * 2017-10-23 2020-04-22 キヤノン株式会社 インプリント装置及び物品の製造方法
JP6650980B2 (ja) * 2017-10-17 2020-02-19 キヤノン株式会社 インプリント装置、及び、物品の製造方法
WO2019078060A1 (ja) * 2017-10-17 2019-04-25 キヤノン株式会社 インプリント装置、及び、物品の製造方法
US10663869B2 (en) * 2017-12-11 2020-05-26 Canon Kabushiki Kaisha Imprint system and imprinting process with spatially non-uniform illumination
JP7030533B2 (ja) * 2018-01-15 2022-03-07 キオクシア株式会社 インプリント装置、インプリント方法、及び半導体装置の製造方法
US11194247B2 (en) * 2018-01-31 2021-12-07 Canon Kabushiki Kaisha Extrusion control by capillary force reduction
US10976657B2 (en) 2018-08-31 2021-04-13 Canon Kabushiki Kaisha System and method for illuminating edges of an imprint field with a gradient dosage
JP6593504B2 (ja) * 2018-09-05 2019-10-23 大日本印刷株式会社 インプリントモールド、インプリントモールド用ブランクス、並びにインプリントモールド用基板の製造方法及びインプリントモールドの製造方法
US11281095B2 (en) 2018-12-05 2022-03-22 Canon Kabushiki Kaisha Frame curing template and system and method of using the frame curing template
JP2020096138A (ja) * 2018-12-14 2020-06-18 キヤノン株式会社 インプリント装置、情報処理装置及び物品の製造方法
US10901327B2 (en) * 2018-12-20 2021-01-26 Canon Kabushiki Kaisha Automatic defect analyzer for nanoimprint lithography using image analysis
JP7237646B2 (ja) * 2019-02-26 2023-03-13 キヤノン株式会社 インプリント方法、インプリント装置、および物品の製造方法
JP7267801B2 (ja) 2019-03-26 2023-05-02 キヤノン株式会社 インプリント装置、インプリント方法、および物品の製造方法
JP7327973B2 (ja) * 2019-03-29 2023-08-16 キヤノン株式会社 インプリント装置、インプリント方法、および物品の製造方法
JP2020179370A (ja) * 2019-04-26 2020-11-05 キヤノン株式会社 吐出材吐出装置、およびインプリント装置
US11181819B2 (en) 2019-05-31 2021-11-23 Canon Kabushiki Kaisha Frame curing method for extrusion control
US11327409B2 (en) 2019-10-23 2022-05-10 Canon Kabushiki Kaisha Systems and methods for curing an imprinted field
US11429022B2 (en) 2019-10-23 2022-08-30 Canon Kabushiki Kaisha Systems and methods for curing a shaped film
JP7379091B2 (ja) 2019-10-30 2023-11-14 キヤノン株式会社 インプリント装置、インプリント方法、及び物品の製造方法
US11366384B2 (en) 2019-12-18 2022-06-21 Canon Kabushiki Kaisha Nanoimprint lithography system and method for adjusting a radiation pattern that compensates for slippage of a template
JP7433949B2 (ja) * 2020-02-06 2024-02-20 キヤノン株式会社 インプリント装置、インプリント方法及び物品の製造方法
US11747731B2 (en) 2020-11-20 2023-09-05 Canon Kabishiki Kaisha Curing a shaped film using multiple images of a spatial light modulator

Family Cites Families (65)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2701765B2 (ja) * 1994-12-28 1998-01-21 日本電気株式会社 半導体装置の製造方法
EP1001311A1 (en) 1998-11-16 2000-05-17 International Business Machines Corporation Patterning device
US6334960B1 (en) * 1999-03-11 2002-01-01 Board Of Regents, The University Of Texas System Step and flash imprint lithography
WO2002008835A2 (en) * 2000-07-16 2002-01-31 Board Of Regents, The University Of Texas System High-resolution overlay alignment methods and systems for imprint lithography
US20050160011A1 (en) * 2004-01-20 2005-07-21 Molecular Imprints, Inc. Method for concurrently employing differing materials to form a layer on a substrate
EP2270592B1 (en) * 2000-07-17 2015-09-02 Board of Regents, The University of Texas System Method of forming a pattern on a substrate
EP2306242A3 (en) * 2000-10-12 2011-11-02 Board of Regents, The University of Texas System Method of forming a pattern on a substrate
US6653030B2 (en) 2002-01-23 2003-11-25 Hewlett-Packard Development Company, L.P. Optical-mechanical feature fabrication during manufacture of semiconductors and other micro-devices and nano-devices that include micron and sub-micron features
US6926929B2 (en) * 2002-07-09 2005-08-09 Molecular Imprints, Inc. System and method for dispensing liquids
US7019819B2 (en) * 2002-11-13 2006-03-28 Molecular Imprints, Inc. Chucking system for modulating shapes of substrates
US7077992B2 (en) * 2002-07-11 2006-07-18 Molecular Imprints, Inc. Step and repeat imprint lithography processes
US7442336B2 (en) * 2003-08-21 2008-10-28 Molecular Imprints, Inc. Capillary imprinting technique
US6932934B2 (en) * 2002-07-11 2005-08-23 Molecular Imprints, Inc. Formation of discontinuous films during an imprint lithography process
US6900881B2 (en) * 2002-07-11 2005-05-31 Molecular Imprints, Inc. Step and repeat imprint lithography systems
US6916584B2 (en) * 2002-08-01 2005-07-12 Molecular Imprints, Inc. Alignment methods for imprint lithography
US7027156B2 (en) * 2002-08-01 2006-04-11 Molecular Imprints, Inc. Scatterometry alignment for imprint lithography
US7019656B2 (en) * 2002-08-06 2006-03-28 Kendro Laboratory Products, Inc. Empty gas supply tank pending warning
US7071088B2 (en) * 2002-08-23 2006-07-04 Molecular Imprints, Inc. Method for fabricating bulbous-shaped vias
US6936194B2 (en) * 2002-09-05 2005-08-30 Molecular Imprints, Inc. Functional patterning material for imprint lithography processes
US7434512B2 (en) * 2002-09-09 2008-10-14 International Business Machines Corporation Printing in a medium
US20040065252A1 (en) * 2002-10-04 2004-04-08 Sreenivasan Sidlgata V. Method of forming a layer on a substrate to facilitate fabrication of metrology standards
US6980282B2 (en) * 2002-12-11 2005-12-27 Molecular Imprints, Inc. Method for modulating shapes of substrates
US6871558B2 (en) * 2002-12-12 2005-03-29 Molecular Imprints, Inc. Method for determining characteristics of substrate employing fluid geometries
WO2004086471A1 (en) * 2003-03-27 2004-10-07 Korea Institute Of Machinery & Materials Uv nanoimprint lithography process using elementwise embossed stamp and selectively additive pressurization
US6777147B1 (en) * 2003-05-21 2004-08-17 International Business Machines Corporation Method for evaluating the effects of multiple exposure processes in lithography
TWI228638B (en) * 2003-06-10 2005-03-01 Ind Tech Res Inst Method for and apparatus for bonding patterned imprint to a substrate by adhering means
US7136150B2 (en) * 2003-09-25 2006-11-14 Molecular Imprints, Inc. Imprint lithography template having opaque alignment marks
US8211214B2 (en) * 2003-10-02 2012-07-03 Molecular Imprints, Inc. Single phase fluid imprint lithography method
US7090716B2 (en) * 2003-10-02 2006-08-15 Molecular Imprints, Inc. Single phase fluid imprint lithography method
US20050084804A1 (en) * 2003-10-16 2005-04-21 Molecular Imprints, Inc. Low surface energy templates
US20050098534A1 (en) 2003-11-12 2005-05-12 Molecular Imprints, Inc. Formation of conductive templates employing indium tin oxide
US20050106321A1 (en) * 2003-11-14 2005-05-19 Molecular Imprints, Inc. Dispense geometery to achieve high-speed filling and throughput
US20050189676A1 (en) * 2004-02-27 2005-09-01 Molecular Imprints, Inc. Full-wafer or large area imprinting with multiple separated sub-fields for high throughput lithography
JP4481698B2 (ja) * 2004-03-29 2010-06-16 キヤノン株式会社 加工装置
JP2005294468A (ja) 2004-03-31 2005-10-20 Canon Inc 位置決め装置、露光装置及びデバイス製造方法
US7140861B2 (en) * 2004-04-27 2006-11-28 Molecular Imprints, Inc. Compliant hard template for UV imprinting
US20050276919A1 (en) * 2004-06-01 2005-12-15 Molecular Imprints, Inc. Method for dispensing a fluid on a substrate
US20050270516A1 (en) * 2004-06-03 2005-12-08 Molecular Imprints, Inc. System for magnification and distortion correction during nano-scale manufacturing
ATE477515T1 (de) * 2004-06-03 2010-08-15 Molecular Imprints Inc Fluidausgabe und tropfenausgabe nach bedarf für die herstellung im nanobereich
US20070228593A1 (en) * 2006-04-03 2007-10-04 Molecular Imprints, Inc. Residual Layer Thickness Measurement and Correction
US7309225B2 (en) * 2004-08-13 2007-12-18 Molecular Imprints, Inc. Moat system for an imprint lithography template
US7547504B2 (en) * 2004-09-21 2009-06-16 Molecular Imprints, Inc. Pattern reversal employing thick residual layers
US20060062922A1 (en) * 2004-09-23 2006-03-23 Molecular Imprints, Inc. Polymerization technique to attenuate oxygen inhibition of solidification of liquids and composition therefor
US7244386B2 (en) * 2004-09-27 2007-07-17 Molecular Imprints, Inc. Method of compensating for a volumetric shrinkage of a material disposed upon a substrate to form a substantially planar structure therefrom
JP5198071B2 (ja) * 2004-12-01 2013-05-15 モレキュラー・インプリンツ・インコーポレーテッド インプリントリソグラフィ・プロセスにおける熱管理のための露光方法
US7811505B2 (en) * 2004-12-07 2010-10-12 Molecular Imprints, Inc. Method for fast filling of templates for imprint lithography using on template dispense
US20060177532A1 (en) * 2005-02-04 2006-08-10 Molecular Imprints, Inc. Imprint lithography method to control extrusion of a liquid from a desired region on a substrate
US20060177535A1 (en) * 2005-02-04 2006-08-10 Molecular Imprints, Inc. Imprint lithography template to facilitate control of liquid movement
US7762186B2 (en) * 2005-04-19 2010-07-27 Asml Netherlands B.V. Imprint lithography
US20070228608A1 (en) * 2006-04-03 2007-10-04 Molecular Imprints, Inc. Preserving Filled Features when Vacuum Wiping
US20060266916A1 (en) * 2005-05-25 2006-11-30 Molecular Imprints, Inc. Imprint lithography template having a coating to reflect and/or absorb actinic energy
JP4290177B2 (ja) * 2005-06-08 2009-07-01 キヤノン株式会社 モールド、アライメント方法、パターン形成装置、パターン転写装置、及びチップの製造方法
JP2007027361A (ja) * 2005-07-15 2007-02-01 Toppan Printing Co Ltd インプリント用モールド
US7670534B2 (en) * 2005-09-21 2010-03-02 Molecular Imprints, Inc. Method to control an atmosphere between a body and a substrate
JP2007109986A (ja) * 2005-10-14 2007-04-26 Victor Co Of Japan Ltd 微細パターンの形成方法
US7906058B2 (en) * 2005-12-01 2011-03-15 Molecular Imprints, Inc. Bifurcated contact printing technique
US7670530B2 (en) 2006-01-20 2010-03-02 Molecular Imprints, Inc. Patterning substrates employing multiple chucks
US7517211B2 (en) * 2005-12-21 2009-04-14 Asml Netherlands B.V. Imprint lithography
US8142850B2 (en) * 2006-04-03 2012-03-27 Molecular Imprints, Inc. Patterning a plurality of fields on a substrate to compensate for differing evaporation times
US7780893B2 (en) * 2006-04-03 2010-08-24 Molecular Imprints, Inc. Method of concurrently patterning a substrate having a plurality of fields and a plurality of alignment marks
US8850980B2 (en) * 2006-04-03 2014-10-07 Canon Nanotechnologies, Inc. Tessellated patterns in imprint lithography
US7462028B2 (en) * 2006-04-03 2008-12-09 Molecular Imprints, Inc. Partial vacuum environment imprinting
TW200842934A (en) * 2006-12-29 2008-11-01 Molecular Imprints Inc Imprint fluid control
US20090014917A1 (en) * 2007-07-10 2009-01-15 Molecular Imprints, Inc. Drop Pattern Generation for Imprint Lithography
US20090053535A1 (en) * 2007-08-24 2009-02-26 Molecular Imprints, Inc. Reduced Residual Formation in Etched Multi-Layer Stacks

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US11904522B2 (en) 2017-09-29 2024-02-20 Canon Kabushiki Kaisha Imprint apparatus and method for manufacturing article
KR20200055096A (ko) * 2017-10-17 2020-05-20 캐논 가부시끼가이샤 임프린트 장치, 및 물품의 제조 방법
KR20230058550A (ko) * 2017-10-17 2023-05-03 매직 립, 인코포레이티드 중합체 생성물들을 주조하기 위한 방법들 및 장치들
US11787138B2 (en) 2017-10-17 2023-10-17 Magic Leap, Inc. Methods and apparatuses for casting polymer products
US12030269B2 (en) 2017-10-17 2024-07-09 Magic Leap, Inc. Methods and apparatuses for casting polymer products
US12099295B2 (en) 2017-10-17 2024-09-24 Canon Kabushiki Kaisha Imprint apparatuses and article manufacturing methods applying viscosity increases without curing of imprint material
KR20200121389A (ko) * 2018-03-19 2020-10-23 어플라이드 머티어리얼스, 인코포레이티드 심이 없는 대면적 임프린트를 생성하기 위한 방법들 및 장치
US11774851B2 (en) 2018-03-19 2023-10-03 Applied Materials, Inc. Methods and apparatus for creating a large area imprint without a seam

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KR102171030B1 (ko) 2020-10-28
TW200938949A (en) 2009-09-16
KR20160054631A (ko) 2016-05-16
US8641958B2 (en) 2014-02-04
JP5216871B2 (ja) 2013-06-19
KR102065400B1 (ko) 2020-01-13
US8361371B2 (en) 2013-01-29
CN101939704A (zh) 2011-01-05
EP2240826A1 (en) 2010-10-20
KR20190120443A (ko) 2019-10-23
WO2009099666A1 (en) 2009-08-13
US20090200710A1 (en) 2009-08-13
JP2011521438A (ja) 2011-07-21
CN101939704B (zh) 2014-03-12
EP2240826A4 (en) 2012-08-01
TWI430015B (zh) 2014-03-11
US20130241109A1 (en) 2013-09-19

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