JP5196838B2 - 接着剤付きチップの製造方法 - Google Patents

接着剤付きチップの製造方法 Download PDF

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Publication number
JP5196838B2
JP5196838B2 JP2007108150A JP2007108150A JP5196838B2 JP 5196838 B2 JP5196838 B2 JP 5196838B2 JP 2007108150 A JP2007108150 A JP 2007108150A JP 2007108150 A JP2007108150 A JP 2007108150A JP 5196838 B2 JP5196838 B2 JP 5196838B2
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Japan
Prior art keywords
chip
adhesive layer
wafer
jig
adhesive
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JP2007108150A
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English (en)
Japanese (ja)
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JP2008270345A (ja
Inventor
丈士 瀬川
直史 泉
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Lintec Corp
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Lintec Corp
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Priority to JP2007108150A priority Critical patent/JP5196838B2/ja
Priority to CN2008800122285A priority patent/CN101657890B/zh
Priority to US12/596,047 priority patent/US8691666B2/en
Priority to PCT/JP2008/057312 priority patent/WO2008129976A1/ja
Priority to KR1020097023805A priority patent/KR101399690B1/ko
Priority to TW97113902A priority patent/TWI470727B/zh
Publication of JP2008270345A publication Critical patent/JP2008270345A/ja
Application granted granted Critical
Publication of JP5196838B2 publication Critical patent/JP5196838B2/ja
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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Dicing (AREA)
  • Die Bonding (AREA)
JP2007108150A 2007-04-17 2007-04-17 接着剤付きチップの製造方法 Active JP5196838B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2007108150A JP5196838B2 (ja) 2007-04-17 2007-04-17 接着剤付きチップの製造方法
CN2008800122285A CN101657890B (zh) 2007-04-17 2008-04-15 带粘接剂芯片的制造方法
US12/596,047 US8691666B2 (en) 2007-04-17 2008-04-15 Method for producing chip with adhesive applied
PCT/JP2008/057312 WO2008129976A1 (ja) 2007-04-17 2008-04-15 接着剤付きチップの製造方法
KR1020097023805A KR101399690B1 (ko) 2007-04-17 2008-04-15 접착제 부착 칩의 제조방법
TW97113902A TWI470727B (zh) 2007-04-17 2008-04-17 附有接著劑之晶片的製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007108150A JP5196838B2 (ja) 2007-04-17 2007-04-17 接着剤付きチップの製造方法

Publications (2)

Publication Number Publication Date
JP2008270345A JP2008270345A (ja) 2008-11-06
JP5196838B2 true JP5196838B2 (ja) 2013-05-15

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Application Number Title Priority Date Filing Date
JP2007108150A Active JP5196838B2 (ja) 2007-04-17 2007-04-17 接着剤付きチップの製造方法

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US (1) US8691666B2 (zh)
JP (1) JP5196838B2 (zh)
KR (1) KR101399690B1 (zh)
CN (1) CN101657890B (zh)
TW (1) TWI470727B (zh)
WO (1) WO2008129976A1 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10586677B1 (en) 2018-09-12 2020-03-10 Kabushiki Kaisha Toshiba Semiconductor apparatus and charged particle ray exposure apparatus

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4107417B2 (ja) * 2002-10-15 2008-06-25 日東電工株式会社 チップ状ワークの固定方法
JP5318557B2 (ja) * 2008-12-24 2013-10-16 信越ポリマー株式会社 保持治具
KR101071180B1 (ko) * 2009-04-03 2011-10-10 한국생산기술연구원 반도체 웨이퍼 관통 비아홀 내의 금속 필링장치 및 이를 이용한 필링방법
JP5744434B2 (ja) * 2010-07-29 2015-07-08 日東電工株式会社 加熱剥離シート一体型半導体裏面用フィルム、半導体素子の回収方法、及び半導体装置の製造方法
JP5419226B2 (ja) 2010-07-29 2014-02-19 日東電工株式会社 フリップチップ型半導体裏面用フィルム及びその用途
JP5757649B2 (ja) * 2011-02-14 2015-07-29 信越ポリマー株式会社 保持治具
JP5767052B2 (ja) * 2011-07-29 2015-08-19 リンテック株式会社 転写装置および転写方法
JP2013102126A (ja) * 2011-10-14 2013-05-23 Fuji Electric Co Ltd 半導体装置の製造方法および半導体装置の製造装置
JP2013191781A (ja) * 2012-03-14 2013-09-26 Fuji Electric Co Ltd 半導体製造装置および半導体製造装置の制御方法
US9484260B2 (en) * 2012-11-07 2016-11-01 Semiconductor Components Industries, Llc Heated carrier substrate semiconductor die singulation method
US9136173B2 (en) * 2012-11-07 2015-09-15 Semiconductor Components Industries, Llc Singulation method for semiconductor die having a layer of material along one major surface
KR102077248B1 (ko) * 2013-01-25 2020-02-13 삼성전자주식회사 기판 가공 방법
US9902092B2 (en) * 2013-11-26 2018-02-27 Taiwan Semiconductor Manufacturing Company, Ltd. Vacuum carrier module, method of using and process of making the same
CN104724336B (zh) * 2013-12-19 2017-01-04 福士瑞精密工业(晋城)有限公司 下料机构
JP6176883B2 (ja) * 2014-07-09 2017-08-09 信越ポリマー株式会社 薄板の保持治具
US9196520B1 (en) * 2014-08-01 2015-11-24 Freescale Semiconductor, Inc. Tape release systems and methods for semiconductor dies
US9478453B2 (en) 2014-09-17 2016-10-25 International Business Machines Corporation Sacrificial carrier dicing of semiconductor wafers
US10446728B2 (en) * 2014-10-31 2019-10-15 eLux, Inc. Pick-and remove system and method for emissive display repair
JP6510461B2 (ja) * 2016-05-25 2019-05-08 日本特殊陶業株式会社 基板保持装置
EP3546540A4 (en) * 2016-11-25 2020-10-14 Mitsui Chemicals Tohcello, Inc. ADHESIVE LAMINATE FILM AND ELECTRONIC DEVICE PRODUCTION PROCESS
JP6399124B2 (ja) * 2017-03-07 2018-10-03 大日本印刷株式会社 粘着剤硬化装置および粘着剤硬化方法
US10373869B2 (en) 2017-05-24 2019-08-06 Semiconductor Components Industries, Llc Method of separating a back layer on a substrate using exposure to reduced temperature and related apparatus
CN110556399B (zh) * 2018-05-31 2020-10-27 浙江清华柔性电子技术研究院 柔性器件的过渡装置、制备方法及柔性器件贴片的方法
KR102594542B1 (ko) * 2018-10-31 2023-10-26 세메스 주식회사 다이 이젝팅 장치
DE102018221148A1 (de) 2018-12-06 2020-06-10 Heraeus Deutschland GmbH & Co. KG Verfahren zum Herstellen eines Substratadapters und Substratadapter zum Verbinden mit einem Elektronikbauteil
CN113165121B (zh) * 2019-03-26 2023-12-05 琳得科株式会社 半导体装置的制造方法以及层叠体
TWI749465B (zh) * 2020-02-14 2021-12-11 聚積科技股份有限公司 積體電路的轉移封裝方法

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4778326A (en) * 1983-05-24 1988-10-18 Vichem Corporation Method and means for handling semiconductor and similar electronic devices
JP2680364B2 (ja) * 1988-08-05 1997-11-19 株式会社日立製作所 半導体装置の製造方法
JPH0689912A (ja) * 1992-09-08 1994-03-29 Fujitsu Ltd 半導体チップ剥離治具及び半導体チップの剥離方法
JP2001060618A (ja) 1999-08-20 2001-03-06 Canon Inc 基板吸着保持方法、基板吸着保持装置および該基板吸着保持装置を用いた露光装置ならびにデバイスの製造方法
JP3748375B2 (ja) * 2000-11-24 2006-02-22 シャープ株式会社 半導体チップのピックアップ装置
JP4266106B2 (ja) * 2001-09-27 2009-05-20 株式会社東芝 粘着性テープの剥離装置、粘着性テープの剥離方法、半導体チップのピックアップ装置、半導体チップのピックアップ方法及び半導体装置の製造方法
JP4137471B2 (ja) * 2002-03-04 2008-08-20 東京エレクトロン株式会社 ダイシング方法、集積回路チップの検査方法及び基板保持装置
TWI225279B (en) * 2002-03-11 2004-12-11 Hitachi Ltd Semiconductor device and its manufacturing method
CN1669119A (zh) * 2002-07-17 2005-09-14 松下电器产业株式会社 拾取半导体芯片的方法和设备及为此使用的吸引和剥落工具
JP4447206B2 (ja) * 2002-10-18 2010-04-07 株式会社ディスコ 半導体ウエーハ保護ユニット及び半導体ウエーハ処理方法
SG116533A1 (en) * 2003-03-26 2005-11-28 Toshiba Kk Semiconductor manufacturing apparatus and method of manufacturing semiconductor device.
JP4599075B2 (ja) * 2003-03-26 2010-12-15 株式会社東芝 半導体製造装置及び半導体装置の製造方法
JP2004311576A (ja) * 2003-04-03 2004-11-04 Toshiba Corp 半導体装置の製造方法
JP4405211B2 (ja) * 2003-09-08 2010-01-27 パナソニック株式会社 半導体チップの剥離装置、剥離方法、及び半導体チップの供給装置
JP4776189B2 (ja) * 2004-08-03 2011-09-21 古河電気工業株式会社 ウエハ加工用テープ
JP2006245351A (ja) * 2005-03-04 2006-09-14 Nitta Ind Corp 半導体チップの製造方法
KR20080050387A (ko) * 2005-07-28 2008-06-05 쿄세라 코포레이션 시료 유지 도구, 이것을 이용한 시료 흡착 장치, 및 이것을이용한 시료 처리 방법
US7875501B2 (en) * 2006-03-15 2011-01-25 Shin-Etsu Polymer Co., Ltd. Holding jig, semiconductor wafer grinding method, semiconductor wafer protecting structure and semiconductor wafer grinding method and semiconductor chip fabrication method using the structure
JP2008103493A (ja) 2006-10-18 2008-05-01 Lintec Corp チップのピックアップ方法及びピックアップ装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10586677B1 (en) 2018-09-12 2020-03-10 Kabushiki Kaisha Toshiba Semiconductor apparatus and charged particle ray exposure apparatus

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