TWI470727B - 附有接著劑之晶片的製造方法 - Google Patents
附有接著劑之晶片的製造方法 Download PDFInfo
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- TWI470727B TWI470727B TW97113902A TW97113902A TWI470727B TW I470727 B TWI470727 B TW I470727B TW 97113902 A TW97113902 A TW 97113902A TW 97113902 A TW97113902 A TW 97113902A TW I470727 B TWI470727 B TW I470727B
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- Prior art keywords
- wafer
- layer
- adhesive
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- adhesion layer
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Description
本發明係有關在晶片的一面設置接著劑之附有接著劑之晶片的製造方法,尤其是有關自經研磨成極薄晶圓而無損地製造各自獨立之附有接著劑之晶片的方法。
在將半導體晶片搭載於半導體裝置用基板的情形下,薄膜狀接著劑可使用為接著晶片(die bond)之用途。薄膜狀接著劑(film shaped die bonding agent)係預先貼附於半導體晶圓,與半導體晶圓一起切割(dicing)來製造附有接著劑之晶片。由於薄膜狀接著劑與糊狀接著劑不同,不會自晶片溢出也不會因塗佈不均而使晶片傾斜,故尤適合使用為堆疊複數之半導體晶片的晶片堆疊型(chip stacking)半導體裝置之晶片間使用的接著劑。
此外,攜帶式電子機器與IC卡等日漸普及,對半導體零件係期望更進一步地薄型化。因此,有將以往厚度為350μm左右的半導體晶片,薄化至厚度50至100μm或更薄的需要。當然即使是如此之極薄的半導體晶片,亦期望為具有膜狀接著劑之附有接著劑之晶片。
另外,薄膜狀接著劑為了切割晶圓而有以與切割片(dicing sheet)層積之形式供給的情形。在如此之情形下,切割片之黏著劑層與薄膜狀黏著劑層即成為拾取(pick upp))時之剝離界面。為了以拾取針拾取接著於該剝離界面之晶片,而需要較一般更強地往上頂起,在極薄的晶片會有晶
片破損的顧慮。此外,如此之薄膜狀接著劑係藉由對晶圓熱壓(thermal compression)而接著。由於經過從加熱及加壓、或者是層積後的過程,切割片之黏著劑層與薄膜狀接著劑層之界面的接著力有上升的傾向,故而使安全地拾取晶片變得更加困難。
另一方面,亦有販賣不使用切割片,而具有對基材層積可剝離之接著劑層的切割.接著晶片兼用之接著片。在如此之接著片方面,雖然沒有因層積黏著劑層與接著劑層而造成界面的接著力上升的問題,但卻有要獲得安定之拾取力而不得不將可使用期間設為較短的問題。
如此在拾取力大的情形下。就算晶片沒有外觀上的破損,而使用內部受損之晶片的半導體裝置,會成為引起因受到熱歷程(thermal history)造成之封裝破裂(package crack)等缺乏信賴性的品質。
在此,為了解決這樣的問題,而檢討不進行以細針往上頂之附有接著劑的拾取方法。(參照專利文獻1)此等方法係使用多孔材料(porous material)之抽吸台(suction table)取代黏著片,在拾取晶片時停止抽吸台之吸附來消除晶片之保持力。可是,在此方法中並無法堵塞住晶片間的縫隙而使空氣漏洩,再者漏洩量會隨著拾取晶片而增大。因此對於未拾取而留下的晶片之保持力降低,會出現因振動造成晶片位置偏移,使吸具(collet)無法抓住晶片的問題。
[專利文獻1]日本國特開2003-179126號公報
本發明係有鑑於上述問題而研創者,目的在於提供一種附有接著劑之晶片的製造方法,在無需將晶片往上頂的同時,伴隨著在拾取的操作中使未經拾取之晶片的保持力不會產生變動之拾取。
為了達成上述目的之有關本發明的附有接著劑之晶片的製造方法,該方法係為:對於切斷裝置及拾取裝置之兩者在以個別形成的定位夾具(jig)之密著層上作成經層積著接著晶片接著劑層以及晶圓的狀態,經由將上述晶圓以及上述接著晶片接著劑層藉切斷裝置完全切斷而形成晶片,其後,將固定了上述晶片之上述定位夾具從上述切斷裝置移載至上述拾取裝置,在上述拾取裝置上而使上述定位夾具之上述密著層變形,藉此而將上述晶片與上述接著晶片接著劑層一起自上述定位夾具拾取;其中,上述定位夾具包含:上述密著層與在一面具有複數之凸出物且在該一面之外緣部具有與該凸出物約為相同高度的側壁之夾具基座,上述密著層層積於具有上述夾具基座之上述凸出物的面上,並接著在上述側壁的上面,而在具有上述夾具基座之上述凸出物的面,藉由上述密著層、上述凸出物、以及上述側壁而形成區塊空間,在上述夾具基座,設置貫通外部與上述區塊空間之至少1個貫通孔,介由上述定位夾具之上述貫通孔而抽吸上述區塊空間內的空氣,藉此可使上述密著層產生變形。
在此,本案發明宜作成在上述定位夾具之上述密著層上隔著剝離片而依序層積上述接著晶片接著劑層以及上述
晶圓之狀態。
此外,本案發明亦可作成在上述定位夾具之上述密著層上隔著保護用黏著片而依序層積上述晶圓以及上述接著晶片接著劑層之狀態。
再者,本案發明亦可作成在上述定位夾具之上述密著層上依序層積上述晶圓以及上述接著晶片接著劑層,還有用以保護上述接著晶片接著劑層之剝離片的狀態。
如此在本發明中,亦可適用於將晶圓在定位夾具上完全切斷而形成晶片的情形。
此外,本案發明係為:對於切斷裝置及拾取裝置之兩者在以個別形成的定位夾具之密著層上作成經層積接著晶片接著劑層以及經單片化之晶圓的狀態,經由配合晶片的外形而藉切斷裝置完全切斷上述接著晶片接著劑層,其後,將固定了上述接著晶片接著層及個別晶片化的晶圓之上述定位夾具從上述切斷裝置移載至上述拾取裝置,在上述拾取裝置上而使上述定位夾具之上述密著層變形,藉此而將上述晶片與上述接著晶片接著劑層一起自上述定位夾具拾取;其中,上述定位夾具包含:上述密著層與在一面具有複數之凸出物且在該一面之外緣部具有與該凸出物約為相同高度的側壁之夾具基座;上述密著層層積於具有上述夾具基座之上述凸出物的面上,並接著在上述側壁的上面,而在具有上述夾具基座之上述凸出物的面,藉由上述密著層、上述凸出物、以及上述側壁而形成區塊空間,在上述夾具基座,設置貫通外部與上述區塊空間之至少1個貫通孔,介由上述定位夾具之上述貫通孔而抽吸上述區塊空間內的空氣,藉此可使上述密著層產生變形。
在此,本發明宜作成在上述定位夾具之上述密著層上
隔著剝離片而依序層積上述接著晶片接著劑層以及上述經單片化之晶圓之狀態。
再者,本發明亦可作成在上述定位夾具之上述密著層上隔著保護用黏著片而依序層積上述經單片化之晶圓以及上述接著晶片接著劑層之狀態。
此外,本發明係亦可作成在上述定位夾具之上述密著層上依序層積上述經單片化之上述晶圓以及上述接著晶片接著劑層,還有用以保護上述接著晶片接著劑層之剝離片的狀態。
如此在本發明中,亦可適用於預先在其他步驟中將經單片化為複數個晶片之晶圓載置於定位夾具的情形。
根據本發明之附有接著劑之晶片的製造方法,由於不需要藉由細針而頂起晶片,僅以吸具之抽吸力而拾取晶片,故不會使晶片受損。此外,由於即使持續拾取晶片也不會改變與留在夾具上之晶片的密著狀態,故不需要為了不使晶片位置偏移而在拾取的後半階段中進行調整吸附力的作業。
因此,即使為經極薄加工之晶片亦可進行晶片之拾取,可安全地移往接著晶片步驟。
以下,參照圖式說明有關本發明之實施例。
第1圖係顯示使用於本發明之定位夾具者,第1圖之
定位夾具係在本發明之附有接著劑之晶片的製造方法中使用。
如第1圖所示,使用於本發明之定位夾具3係由夾具基座30與密著層31構成。就夾具基座30的形狀而言,可舉出略圓形、略橢圓形、略矩形、以及略多角形,而以略圓形為佳。在夾具基座30之單面,如第1圖以及第2圖所示,複數的凸出物36係留有間隔地朝上方突出而形成。凸出物36之形狀並無特別限定,但以圓柱形或圓錐梯形為佳。此外,在具有此凸出物36之面的外緣部,係形成有與凸出物36約為相同高度的側壁35。此外,在具有夾具基座30之凸出物36的面上層積有密著層31。此密著層3311係接著在側壁35之上面,此外,凸出物36之上面與密著層31可接著亦可不接著。在具有夾具基座30之凸出物36的面,係藉由凸出物36、側壁35、以及密著層31而形成區塊空間37。而此等之區塊空間37全部連通。
另一方面,在不具有夾具基座30之凸出物36的面,貫通此面側之外部與區塊空間37之貫通孔38係設置於夾具基座30之厚度方向。貫通孔38在夾具基座30中設置至少1個即可,亦可設置複數個。此外,在夾具基座30之水平方向設置貫通孔38,代替不具有夾具基座30之凸出物36的面的貫通孔38,亦可在側壁35設置開口部。在此貫通孔38之開口部,以連接自由裝卸之真空裝置的方式,藉此排出區塊空間37內之氣體而可使密著層31變形為凹凸狀。
夾具基座30的材質,只要為機械強度優異者便無特別限定,例如,可舉出聚碳酸酯、聚丙烯、聚乙烯、聚對苯二甲酸乙二酯樹脂、丙烯酸樹脂、聚氯乙烯等熱塑性樹脂;鋁合金、鎂合金、不鏽鋼等金屬材料;玻璃等之無機材料;玻璃纖維強化環氧樹脂等之有機無機複合材料等。夾具基座30之彎曲彈性率以1GPa以上為佳。只要具有如此之彎曲彈性率,不用使夾具基座30之厚度成為必要厚度以上便可賦予剛硬性。藉由使用如此之材料,在從使晶片密著於定位夾具3到搭載至拾取裝置為止的搬運中不會彎曲,不會引起晶片之位置偏移或脫落。
夾具基座30之外徑係以與半導體晶圓之外徑略同或較半導體晶圓之外徑大者為佳。只要夾具基座30具有可對應半導體晶圓之規格尺寸之最大徑(例如直徑300mm)的外徑,便可適用於較其小之所有的半導體晶圓。此外,夾具基座30的厚度係以0.5至2.0mm為佳,以0.5至0.8mm為較佳。若夾具基座30之厚度在上述範圍,則在晶圓之背面研磨後不使晶圓彎曲且可充分地支撐。
凸出物36以及側壁35之高度係以0.05至0.5mm為較佳。此外,凸出物36之上面的徑係以0.05至1.0mm為佳。再者,凸出物之間隔(凸出物之中心間距)係以0.2至2.0mm為佳。若凸出物36之大小以及凸出物之間隔在上述範圍內,則可藉由區塊空間37內之除氣使密著層31充分地變形成凹凸狀,而可容易地從密著層31取下半導體晶片。再者,即使在反複進行密著層31之凹凸變形後,亦可
不斷地復原為原本之平坦的狀態。
貫通孔38之直徑並無特別限定,但以在2mm以下為佳。
如此之夾具基座30係例如,可將熱塑性之樹脂材料使用模具加熱成形,使夾具基座的底部、側壁35、以及凸出物36一體化而製造,亦可在平面圓形板上形成側壁35以及凸出物36來製造,或可在凹形圓板之凹部內表面形成凸出物來製造。就凸出物的形成方法而言,可舉出藉由電鑄法使金屬析出成預定形狀的方法;藉由網版印刷形成凸出物的方法;在平面圓形板上層積光阻,並曝光、顯影而形成凸出物的方法。此外,藉由蝕刻侵蝕去除金屬製平面圓形板的表面而留下凸出物形成部分的方法或藉由噴砂去除平面圓形板之表面而留下凸出物形成部分的方法等,而可藉此製造夾具基座30。另外,貫通孔38係可在形成凸出物36前預先形成,亦可在形成凸出物之後形成。此外,亦可與夾具基座之成型同時形成。
就配置在夾具基座30上之密著層31的材質而言,可舉出可撓性、柔軟性、耐熱性、彈性、黏著性等優良之,聚胺甲酸酯系、丙烯酸系、氟系、或矽氧系之彈性體。如有必要,可在在此彈性體中添加增強性填料或疏水性氧化矽等之各種添加劑。
密著層31係以與夾具基座30為略相同形狀之平板者為佳,密著層31之外徑係以與夾具基座30之外徑為略相同者為佳。厚度係以20至200μm為佳。在密著層31之厚
度未滿20μm時,對於抽吸之重複進行而缺乏機械性的耐久性。另一方面,若密著層31之厚度超過200μm,則有因抽吸而剝離明顯地耗費時間的情形而為不佳。
此外,密著層31之拉伸破斷強度係以在5MPa以上為佳,拉伸破斷伸長率係以在500%以上為佳。若拉伸破斷強度與拉伸破斷伸長率在以上的範圍內,即使在不斷重複密著層31之變形的情形下,也不會產生密著層31之破斷或鬆弛,而可復原為原本平坦的狀態。
此外,密著層31之彎曲彈性率係以在10至100MPa的範圍為佳。在密著層31之彎曲彈性率未滿10MPa時,密著層31之與凸出物36的接點以外的部分係受重力而彎曲,有不能密合於晶片的情形。另一方面,若超過100MPa,即難以引起因抽吸所造成之變形,而有變得無法使晶片容易地剝離的情形。
此外,接觸密著層31之半導體晶圓之側的面,其剪斷密著力以在35N以上為佳。在本發明中之剪切密著力係指在密著層31與矽晶圓的鏡面之間測定的值,該剪切密著力為在將密著層31貼附於具有長30mm×寬30mm×厚3mm之大小的公知玻璃板並配置於矽構成之鏡面晶圓上,在玻璃板與密著層31之全體施加900g之荷重5秒鐘,且將玻璃板與鏡面晶圓平行地施加荷重按壓的情形下,測定開始動作時之荷重者。
再者,密著層31之密著力可望在2N/25mm以下。在超過於此的值時,密著層31與配置於其上之晶片的密著變
得過大而成為結塊(blocking)狀態,即有因抽吸使晶片之剝離無法進行的顧慮。另外,在本發明中所謂之密著力,係指在晶圓之鏡面貼附密著層31,並將其剝離時的剝離強度。
如此之密著層31係藉由例如,壓光法(colander method)、加壓法、鍍膜法、或印刷法,預先製作由上述彈性體構成之薄膜,可藉由將此彈性體接著於夾具基座30之至少側壁35的上面而形成,藉此形成區塊空間37。就接著上述密著層31的方法而言,可舉出介著由丙烯酸樹脂、聚酯樹脂、環氧樹脂、矽氧樹脂、或彈性體樹脂構成之接著劑接著的方法;或在密著層31為熱封性時藉由熱封接著的方法。
在密著層31之表面,亦可施以非黏著處理,尤其以只有在變形為凹凸狀時與半導體晶片接觸之凸出物36上部的密著層表面,進行非黏著處理為佳。若如此進行處理,密著層31變形前係以密著層表面未經非黏著處理的部分密著於半導體晶片,由於變形成凹凸狀之密著層31係以凸出物36上部之表面,亦即僅以非黏著性之凸部表面與半導體晶片接觸,故可更容易地從密著層31取下半導體晶片。就非黏著處理的方法而言,可舉出例如,藉由真空裝置抽吸區塊空間37內的空氣使密著層31變形成凹凸狀,並將凸部前端藉由磨刀石輥等進行物理性地糙面化的方法;UV處理之方法;層積非黏著性橡膠的方法;以及塗佈非黏著性塗料的方法等。非黏著部之表面粗度,係以平均粗度Ra
在1.6μm以上為佳,以在1.6至12.5μm為較佳。藉由使非黏著部以上述範圍之表面粗度而粗糙化,密著層31不會劣化,並可更容易地從密著層31取下半導體晶片。
在本發明中,預先準備如上述方式形成之定位夾具3。
如第3圖(A)至(C)所示,在本發明中,最後與晶片1133一起經拾取之接著晶片接著劑層24係以由接著片20提供為佳。亦即,接著片20係具有在具備矽氧等之剝離層之剝離片22上層積著可剝離之接著晶片接著劑層24之層的構造。為了接著片20之保存或露出面的保護,在接著晶片接著劑層24的反面亦可層積別的剝離片。
接著晶片接著劑層24係由熱硬化性或熱塑性的樹脂組成物構成,藉由將該樹脂組成物的塗佈液塗佈於剝離片22或是別的剝離片上而形成層的同時,製造接著片20。
由使用於本發明之熱硬化性之樹脂組成物構成的接著晶片接著劑層24,係可舉出例如黏結劑樹脂與熱硬化性樹脂的混合物。
就構成熱硬化性之樹脂組成物的黏結劑樹脂而言,可舉出例如丙烯酸樹脂、聚酯樹脂、聚乙烯醚樹脂、胺甲酸酯樹脂、聚醯胺樹脂等。就熱硬化性樹脂而言,使用例如環氧樹脂、丙烯酸樹脂、聚醯亞胺樹脂、酚樹脂、脲樹脂、三聚氰胺樹脂、間苯二酚樹脂等,而宜為環氧樹脂。再者,亦可使用用以使熱硬化性樹脂硬化的硬化劑。此外為了在常溫為黏著性之接著晶片接著劑層24控制與剝離片22的
剝離性,以調配聚胺甲酸酯系丙烯酸酯寡聚物等之紫外線硬化性樹脂為佳。若調配紫外線硬化性樹脂,則剝離片22係在紫外線照射前與接著晶片接著劑層24良好地密著,而在紫外線照射後變得容易剝離。
由使用於本發明之熱硬化性之樹脂組成物構成的接著晶片接著劑層24,係於常溫可為黏著性亦可為非黏著性。常溫為黏著性之接著晶片接著劑層24,係可在至接著晶片之暫時接著(temporary bonding)為止的溫度為室溫或較低溫下之加熱處理進行接著,由於與使接著晶片接著劑層24完全熱硬化之條件的差異很大,故溫度管理變得容易進行。此外,常溫為非黏著性之接著晶片接著劑層24,係由於在接著晶片的瞬間沒有完成暫時接著而不易混入空氣。接著晶片接著劑層24主要為,所使用之黏結劑樹脂為黏著性者即成為黏著性,使用非黏著性者便成為非黏著性。
接著晶片接著劑層24的厚度,係依經由配線基板等之接著晶片進行接著的對象物之表面形狀而不同,通常為3至100μm,宜為10至50μm。
就剝離片22而言,係使用聚乙烯薄膜、聚丙烯薄模、聚丁烯薄膜、聚丁二烯薄膜、聚甲基戊烯薄膜、聚氯乙烯薄膜、氯乙烯共聚物薄膜、聚胺甲酸酯薄膜、乙烯乙酸乙烯酯薄膜、離子聚合物樹脂薄膜、乙烯.(甲基)丙烯酸共聚物薄膜、乙烯.(甲基)丙烯酸酯共聚物薄膜、氟樹脂薄膜等較軟質之樹脂製薄膜;或聚對苯二甲酸乙二酯薄膜、聚萘二甲酸乙二酯薄膜、聚對苯二甲酸丁二酯薄膜、聚苯乙烯
薄膜、聚碳酸酯薄膜、聚醯亞胺薄膜等較硬質之樹脂製薄膜。
就使用於剝離片22之樹脂製薄膜而言,可為從上述薄膜中選擇之單層薄膜,亦可為積層薄膜。此外亦可使用此等之交聯薄膜。在將剝離片22層積於接著晶片接著劑層24並直接層積於定位夾具3之密著層31而使用時,可使用較軟質之樹脂製薄膜使剝離片22受到與密著層31之相同抽吸而變形。而剝離片22不層積於定位夾具3之密著層31時,可使用較硬質的樹脂製薄膜。
由於剝離片22可與接著晶片接著劑層24剝離,故接觸接著晶片接著劑層24的面以顯示低表面張力為佳,例如期望為40mN/m以下。表面張力低之樹脂製薄膜可適當地選擇材質而得,此外亦可在樹脂製薄膜的表面塗佈矽氧樹脂等之剝離劑施以剝離處理而獲得。
剝離片22之膜厚,通常為10至500μm,宜為15至300μm,尤宜為20至250μm左右。
就本發明中所使用之晶圓1而言,可舉出從矽或化合物半導體到半導體晶圓、玻璃、或陶瓷等絕緣材料所構成之晶圓。在使用半導體晶圓作為晶圓1的情形,係例如在表面側形成電路的同時背面側為經研磨加工的狀態,如第4圖所示,可使用未以切割等進行單片化前的晶圓。晶圓1例如在100μm以下之極薄厚度者由於即使是本身重量也容易破損,故尤其可受惠於本發明之效果。
此外,在本發明中,將保持切割前之晶圓的輪廓形狀直接連電路一起切斷的晶片13之集合體的狀態稱為經單片化之晶圓(單片化晶圓80)。
在本發明之實施型態中使用的保護用黏著片25,係可適當選擇由該業者於市面販售之晶圓研磨用黏著膠帶(BG膠帶)來使用。具體而言,將樹脂製薄膜作為基材,在基材的單面使紫外線硬化型等再剝離性優良的黏著劑層為黏著片。
將保護用黏著片25隔在定位夾具3之密著層31與晶圓1之間層積而使用時,可使用較軟質的樹脂製薄膜作為基材使得保護用黏著片25受到與密著層31同樣的抽吸而變形。而保護用黏著片25不層積於定位夾具3之密著層31時,可使用較硬質之樹脂製薄膜作為基材。
本發明之第1實施態樣係由以下三個步驟所構成:如第3圖(A)所示,在定位夾具3之密著層31上隔著剝離片22成為依序層積接著晶片接著劑層24與晶圓1之狀態的步驟(步驟1A);如第3圖(B)所示,完全地切斷上述晶圓1以及上述接著晶片接著劑層24而形成晶片13的步驟(步驟1B);以及如第3圖(C)所示,藉由上述定位夾具3之上述密著層31的變形,將上述晶片13與上述接著晶片接著劑層24一起自上述定位夾具3拾取的步驟(步驟1C)。
供給於本實施型態的晶圓1,係在表面進行電路的形
成後進行背面研磨。在進行背面研磨步驟時,如第5圖所示,在晶圓1之電路面1a貼附有用以保護電路的保護用黏著片25,如第6圖所示,藉由背面研磨(back grind)裝置26研磨晶圓1之背面,使晶圓1調整至例如50μm左右之極薄厚度。接著,如第7圖所示,在晶圓1的研磨面層積著接著片20之接著晶片接著劑層24側,保護用黏著片25係從晶圓1之電路面1a剝離去除。再使晶圓1上之剝離片22側與定位夾具3係以與密著層31面對面接觸,而可成為第3圖(A)所示之步驟1A中之積層順序的狀態。
接著,如第3圖(B)所示,進行完全地切斷晶圓1以及接著晶片接著劑層24而形成晶片13的步驟(步驟1B),形成晶片13。切斷係可藉由一般的刀片切割法進行,亦可藉由雷射切割法進行。此外,亦可藉由將晶圓1以及接著晶片接著劑層24以專用刀片進行之雙切割(dual dicing)法進行。
將固定於定位夾具3之晶圓1以定位夾具3為下方搭載於切斷器等切斷裝置的處理台。只要是不會使晶圓1脫落且不會被定位夾具3之貫通孔38所抽吸的構造,便可直接使用具備具有一般晶圓固定手段之以往使用的處理台之切斷裝置。在處理台由多孔狀素材構成的情形,只要遮蔽直接接觸於貫通孔38的部分之抽吸即可。如此,以與習知方法幾乎相同的手段與方法進行切斷的步驟。另外,由於接著晶片接著劑層24與密著層31係隔介剝離片22而層積,故可切入至剝離片22之層,可為了提升生產性而降低
切入深度之精度以提升速度。
接著,如第3圖(C)所示,藉由使定位夾具3之密著層31變形的方式,將晶片13與接著晶片接著劑層24一起自定位夾具3拾取的步驟(步驟1C)。
固定晶片13之定位夾具3係自切斷裝置移載至拾取裝置,以進行拾取步驟(步驟1C)。在本實施形態使用之拾取裝置,係使用用以處理定位夾具3之專用的裝置,具體而言,使用記載於由本發明之申請人提出申請之日本國特願2006-283983之拾取裝置。該申請案之拾取裝置100,如第8圖所示,係具有將定位夾具3固定之工作台51與抽吸保持晶片13之吸具70,工作台51係具有將定位夾具3固定之吸附部50;以及連接至定位夾具3之貫通孔38並用以抽吸區塊空間37之抽吸部52出現開口,成為可分別獨立吸附之構造。
定位夾具3係在拾取裝置100之工作台51使貫通孔38與抽吸部52一致並以由吸附部50吸附著定位夾具3本體的方式而固定。若將源自真空裝置4之負壓介由抽吸部52以及貫通孔38施加至區塊空間37,則密著層31即朝向區塊空間37側變形。在此,由於使用較軟質之樹脂製薄膜作為剝離片22,故如第3圖(C)所示,剝離片22亦隨著密著層31而變形。由於接著於晶片13之接著晶片接著劑層24不能變形,故如第9圖所示,剝離片22與接著晶片接著劑層24的界面係以只有凸出物36的位置為點接觸的狀態而剝離。
在此即使進行拾取而使定位夾具3上之晶片13的存在面積比例有很大的變化,晶片13的保持力係與接觸之密著層31的面積成比例。由於點接觸於個別之晶片13的密著層31之面積不會因拾取之進行而變化,故其保持力到最後仍為一定。
之後,吸具70係移動至預定之1個晶片13的位置並面對晶片面,藉由在吸具70施加負壓的方式,晶片13以層積接著晶片接著劑層24的狀態由吸具70所吸附保持(拾取)。
經拾取之晶片13可在引線框架等電路基板進行直接接著晶片,亦可先保持在晶片分類(die sort)膠帶等晶片載體材料,並進行保管輸送,亦可進行接著晶片。
另外,在上述之實施形態中,雖顯示使定位夾具3與接著晶片接著劑層24,成為經隔著剝離片22層積之狀態的方法,但亦可為成為不隔著剝離片22而直接層積之狀態的方法。在此情形下,只要使接著片20貼附於晶圓1後將剝離片22剝離即可。在此情形下,切割之切入深度,係以成為晶圓1與密著層31之界面的方式精密地進行。
此外,在上述之實施形態中,雖於步驟途中剝離保護用黏著片25,以露出晶圓1之電路面1a的狀態進行切斷,但亦可不剝離保護用黏著片25而在拾取步驟前後或是進行接著晶片後將保護用黏著片25剝離。在此情形下,保護用黏著片25係於切斷步驟中與晶圓1和接著晶片黏著劑層24同樣地經切斷,而可防止切削屑或刀片破損時之碎片等
造成晶圓1之電路面的損傷。經切斷之保護用黏著片25係可使用其他剝離用之黏著膠帶進行剝離。
再者,在上述之實施形態中,雖顯示在晶圓1之背面研磨面設置接著晶片接著劑層24的構成,但亦可為接著晶片接著劑層24係貼附於晶圓1之電路面1a之構成的方法。在此情形下,接著晶片步驟係使用電路基板與晶片1133之電路面相對面之覆晶接合(flip chip bonding)法,接著晶片接著劑層24發揮底部填充(underfill)的功能。
此外,在上述之實施形態中,雖使用在晶圓1側先貼附接著晶片接著劑層24後,再與定位夾具3層積的方法,但亦可將接著晶片接著劑層24先與定位夾具3層積後,於接著晶片接著劑層24的面層積晶圓1的方法。
接著說明有關本發明之第2實施形態。
本發明之第2實施形態係由以下三個步驟所構成:如第10圖(A)所示,在定位夾具3之密著層31上隔著保護用黏著片25成為依序層積晶圓1以及接著晶片接著劑層24之狀態的步驟(步驟2A);如第10圖(B)所示,完全地切斷上述晶圓1以及上述接著晶片接著劑層24而形成晶片1133的步驟(步驟2B);以及如第10圖(C)所示,藉由上述定位夾具3之上述密著層31的變形,將上述晶片13與上述接著晶片接著劑層24一起自上述定位夾具3拾取的步驟(步驟2C)。
在本實施形態中亦藉由與第1實施形態相同的手法,
準備使用保護用黏著片25研磨至極薄的晶圓1,在背面研磨面貼附接著片20。接著,使貼附在晶圓1之電路面1laa之保護用黏著片25側與定位夾具3以面對面方式接觸密著層31,而可成為步驟2A(第10圖(A))中之積層順序的狀態。另外,接著片20中之剝離片22並不剝離。
接著,進行完全地切斷晶圓1以及接著晶片接著劑層24而形成晶片13的步驟(步驟2B),形成晶片13。在本實施形態中之切斷係可直接使用前述之第1實施形態的切斷手段、方法。另外,由於剝離片22層積在接著晶片接著劑層24上故亦切斷剝離片22。剝離片22係在切斷步驟之期間,發揮自切削屑的污染等保護接著晶片接著劑層24的功能。
此外,由於晶圓1與密著層31係隔著保護用黏著片25而層積,故可切入至保護用黏著片25之層,並可為了提升生產性而降低切入深度之精度以提升速度。在切斷步驟結束之後,使用剝離用之黏著膠帶等剝離去除接著晶片接著劑層24上之剝離片22。
接著,藉由使定位夾具3之密著層31變形的方式,進行將晶片13與接著晶片接著劑層24一起自定位夾具3拾取的步驟(步驟2C)。在本實施形態使用之拾取裝置,亦可使用與在第1實施形態使用者相同的裝置。
定位夾具3係在拾取裝置100之工作台51使貫通孔38與抽吸部52成為一致並以由吸附部50吸附定位夾具3本體的方式固定。若將源自真空裝置4之負壓介由抽吸部
52以及貫通孔38施加至區塊空間37,則密著層31即朝向區塊空間37側變形。在此,由於保護用黏著片25係使用較軟質之樹脂製薄膜作為其素材,故保護用黏著片25亦隨著密著層31而變形。由於晶片13本身不能變形,故保護用黏著片25係以只有凸出物36的位置為點接觸的狀態剝離(第10圖(C))。
之後,吸具70係移動至預定之1個晶片的位置並面對晶片上之接著晶片接著劑層24之面,藉由在吸具70施加負壓的方式,晶片13以層積接著晶片接著劑層24的狀態由吸具70吸附保持(拾取)。
經拾取之晶片13係可在引線框架等電路基板進行直接接著晶片,亦可先保持在晶片分類膠帶等晶片載體材料,進行保管輸送,再進行接著晶片。
另外,在上述之第2實施形態中,雖顯示使定位夾具3與晶圓1成為隔著保護用黏著片25而層積之狀態的方法,但亦可為以不隔著保護用黏著片25成為直接層積之狀態的方法。在此情形下,只要使接著片20貼附於晶圓1後將保護用黏著片25剝離即可。在此情形下,切割之切入深度,係以成為晶圓1與密著層31之界面的方式精密地進行。此外,在上述之第2實施形態中,雖在切斷步驟後將剝離片22剝離,但亦可在朝定位夾具3之層積前、切斷步驟前、或拾取步驟後進行。
再者,在上述之第2實施形態中,雖顯示在晶圓1之背面研磨面設置接著晶片接著劑層24的構成,但亦可為接
著晶片接著劑層24貼附於晶圓1之電路面1a之構成的方法。在此情形下,接著晶片步驟係使用電路基板與晶片1133之電路面相對之覆晶接合法,使接著晶片接著劑層24發揮底部填充的功能。
此外,在上述之第2實施形態中,雖使用先在晶圓1側貼附接著片20,之後再與定位夾具3層積的方法,但亦可為將晶圓1先層積於定位夾具3後,再於接著片20之接著晶片接著劑層24上層積晶圓1。
接著說明有關本發明之第3實施形態。
本發明之第3實施形態係由以下三個步驟所構成:如第11圖(A)所示,在定位夾具3之密著層31上隔著剝離片22成為依序層積接著晶片接著劑層24以及經單片化之晶圓80之狀態的步驟(步驟3A);如第11圖(B)所示,配合上述晶片之外形完全地切斷上述接著晶片接著劑層24的步驟(步驟3B);以及如第11圖(C)所示,藉由上述定位夾具3之上述密著層31的變形,將上述晶片13與上述接著晶片接著劑層24一起自上述定位夾具3拾取的步驟(步驟3C)。
對本實施形態供給單片化之晶圓80,係先經切割法而獲得。具體而言,在晶圓1的電路面側進行超過目的之晶片厚度的深度之半切穿(half cut)切割,在電路表面貼附保護用黏著片25並將背面側進行研磨至目的之厚度為止,使同時進行薄化與晶圓1之單片化而獲得。先經切割法所獲
得之晶片係不容易產生晶片缺損,此外由於抗折強度較以一般方法所得之晶片強,可獲得信賴性更高之半導體裝置。
接著,接著片20之接著晶片接著劑層24側貼附於經單片化之晶圓80的背面研磨面,再使接著片20之剝離片22與定位夾具3以面對面方式接觸密著層31。在此,如第12圖所示,保護用黏著片25係從晶圓80之電路面剝離去除,而可成為步驟3A(第11圖(A))中之積層順序的狀態。
接著,進行配合經單片化之各晶片的外形完全地切斷接著晶片接著劑層24的步驟(步驟3B)。切斷係可藉由一般的刀片切割法進行,亦可藉由雷射切割法進行。另外,由於接著晶片接著劑層24與密著層31隔著剝離片22而層積,故可切入至剝離片22之層,可為了提升生產性而降低切入深度之精度以提升速度。
接著,藉由使定位夾具3之密著層31變形的方式,進行將晶片13與接著晶片接著劑層24一起自定位夾具3拾取的步驟(步驟3C)。在本實施形態使用之拾取裝置,亦可使用與在第1實施形態使用者相同的裝置。
定位夾具3係在拾取裝置100之工作台51使貫通孔38與吸引部52成為一致並以由吸附部50吸附定位夾具3本體的方式固定。若將源自真空裝置4等之負壓隔介抽吸部52以及貫通孔38施加至區塊空間37,則密著層31即朝向區塊空間37側變形。在此,由於使用較軟質之樹脂製薄膜作為剝離片22,因此剝離片22亦隨著於密著層31而變形。由於晶片13在接著之接著晶片接著劑層24不能變
形,故剝離片22與接著晶片接著劑層24的界面係以只有凸出物36的位置為點接觸的狀態剝離(第11圖(C))。
之後,吸具70係移動至預定之1個晶片13的位置而面對晶片面,藉由在吸具70施加負壓的方式,晶片13以層積接著晶片接著劑層24的狀態由吸具70所吸附保持(拾取)。
經拾取之晶片13可在引線框架等電路基板進行直接接著晶片,亦可先保持在晶片分類膠帶等晶片載體材料,進行保管輸送,再進行接著晶片。
另外,在上述之第3實施形態中,雖藉由先切割法而準備經單片化之晶圓80,但亦可使用藉由其他方法而準備者。具體而言,在晶圓1之電路面貼附保護用黏著片25進行背面研磨,接著固定保護用黏著片25側從晶圓1之研磨面‘進行切割,然後將接著片20之接著晶片接著劑層24側貼附於經單片化之晶圓80的背面研磨面,再使接著片20之剝離片22側與定位夾具3以面對面方式接觸密著層31,之後藉由將保護用黏著片25從晶圓80之電路面剝離去除,而可成為第3實施形態之積層順序的狀態。
此外,在上述之第3實施形態中,雖顯示成為將定位夾具3與接著晶片接著劑層24隔著剝離片22而層積之狀態的方法,但亦可為成為不隔著剝離片22而直接層積之狀態的方法。在此情形下,只要使接著片20貼附於晶圓1後將剝離片22剝離即可。在此情形下,切割之切入深度,係以成為固晶接著劑層24與密著層31之界面的方式精密
地進行。
再者,在上述之第3實施形態中,雖在將晶圓80層積於定位夾具3後剝離保護用黏著片25,但可在將接著片20貼附於晶圓80後進行,此外亦可在結束切斷步驟後且在進行接著晶片前後剝離保護用黏著片25。在結束切斷步驟後進行剝離時,切斷步驟中之保護用黏著片25係於切斷步驟與接著晶片黏著劑層24同樣地經切斷,而可防止切削屑或刀片破損時之破片等造成晶片13之電路面的損傷。經切斷之保護用黏著片25可使用其他剝離用之黏著膠帶進行剝離。
此外,在上述之第3實施形態中,雖顯示在單片化晶圓80之背面研磨面設置接著晶片接著劑層24的構成,但亦可為接著晶片接著劑層24貼附於單片化晶圓80之電路面之構成的方法。在此情形下,接著晶片步驟係使用電路基板與晶片13之電路面相對之覆晶接合法,使接著晶片接著劑層24發揮底部填充的功能。
再者,在上述之第3實施形態中,雖使用先在單片化晶圓80側貼附接著晶片接著劑層24後,與定位夾具3層積的方法,但亦可為將接著晶片接著劑層24先層積於定位夾具3後,於接著晶片接著劑層24的面層積單片化晶圓80。
接著說明有關本發明之第4實施形態。
本發明之第4實施形態係由以下三個步驟所構成:如
第13圖(A)所示,在定位夾具3之密著層31上隔著保護用黏著片25成為依序層積經單片化之晶圓80以及接著晶片接著劑層24之狀態的步驟(步驟4A);如第13圖(B)所示,配合上述晶片之外形完全地切斷上述接著晶片接著劑層24的步驟(步驟4B);以及如第13圖(C)所示,藉由上述定位夾具3之上述密著層31的變形,將上述晶片13與上述接著晶片接著劑層24一起自上述定位夾具3拾取的步驟(步驟4C)。
供給本實施形態之經單片化之晶圓80,係與第3實施形態以同樣方式獲得,宜藉由先切割法而獲得。接著,接著片20之接著晶片接著劑層24側貼附於單片化晶圓80的背面研磨面,再使單片化晶圓80上之保護用黏著片25與定位夾具3以面對面方式接觸密著層31,而可成為步驟4A(第13圖(A))中之積層順序的狀態。
接著,進行配合經單片化之各晶片的外形完全地切斷接著晶片接著劑層24的步驟(步驟4B)。切斷係可藉由一般的刀片切割法進行,亦可藉由雷射切割法進行。由於在接著晶片接著劑層24上層積有剝離片22故一併進行切斷。剝離片22係在切斷步驟之期間,發揮防護來自切削屑的污染等之接著晶片接著劑層24的功能。在切斷步驟結束後,使用剝離用之黏著膠帶等將接著晶片接著劑層24上之剝離片22剝離去除。
接著,藉由使定位夾具3之密著層31變形的方式,進行將晶片13與接著晶片接著劑層24一起自定位夾具3拾
取的步驟(步驟4C)。在本實施形態使用之拾取裝置,亦可使用與在第1實施形態使用者相同的裝置。
定位夾具3係在拾取裝置100之工作台51使貫通孔38與抽吸部52成為一致並以由吸附部50吸附定位夾具3本體的方式而固定。若將源自真空裝置4之負壓介由抽吸部52以及貫‘通孔38施加至區塊空間37,則密著層31即朝向區塊空間37側變形。在此,由於保護用黏著片25係使用較軟質之樹脂製薄膜作為其素材,因此保護用黏著片25亦隨著密著層31而變形。由於晶片13本身不能變形,故保護用黏著片25係以只有凸出物36的位置為點接觸的狀態而剝離(第13圖(C))。
之後,吸具70係移動至預定之1個晶片13的位置並面對晶片上之接著晶片接著劑層24的面,藉由在吸具70施加負壓的方式,晶片13以層積接著晶片接著劑層24的狀態而由吸具70吸附保持(拾取)。
經拾取之晶片13係可在引線框架等電路基板進行直接接著晶片,亦可先保持在晶片分類膠帶等晶片載體材料,進行保管輸送,再進行接著晶片。
另外,在上述之第4實施形態中,雖顯示成為將定位夾具3與接著晶片接著劑層24隔著保護用黏著片25而層積之狀態的方法,但亦可為成為不隔著保護用黏著片25而直接層積之狀態的方法。在此情形下,只要使接著片20貼附於單片化晶圓80後將保護用黏著片25剝離即可。此外,在上述之第4實施形態中,雖於切斷步驟進行後將剝
離片22剝離,但可在將接著片20貼附於單片化晶圓80後進行,亦可在結束切斷步驟後且在進行接著晶片前後將剝離片22剝離。
再者,在上述之第4實施形態中,雖顯示在單片化晶圓80之背面研磨面設置接著晶片接著劑層24的構成,但亦可為接著晶片接著劑層24貼附於單片化晶圓80之電路面之構成的方法。在此情形下,接著晶片步驟係使用電路基板與晶片13之電路面相對之覆晶接合法,使接著晶片接著劑層24發揮底部填充的功能。
此外,在上述之第4實施形態中,雖使用在單片化晶圓80側先貼附接著晶片接著劑層24後,與定位夾具3層積的方法,但亦可為將接著晶片接著劑層24先層積於定位夾具3後,再於接著晶片接著劑層24的面層積晶圓80。
即使在本發明中之任何實施形態,皆可只以吸具70之抽吸力拾取晶片13,而晶片13並無因以細針頂起晶片所造成的損傷。此外,由於即使持續拾取晶片13,與殘留在定位夾具3上之晶片13的密著狀態也不會變化,故也不需要在拾取之後半階段以晶片13不會偏移位置的方式調整吸附力的作業。因此,即使為經加工至極薄的晶片1133亦可能進行附有接著劑之晶片13的拾取,而可安全地移送至接著晶片步驟。
1‧‧‧晶圓
1a‧‧‧電路面
3‧‧‧定位夾具
4‧‧‧真空裝置
13‧‧‧晶片
20‧‧‧接著片
22‧‧‧剝離片
24‧‧‧接著晶片接著劑層
25‧‧‧保護用黏著片
26‧‧‧背面研磨
30‧‧‧夾具基座
31‧‧‧密著層
35‧‧‧側壁
36‧‧‧凸出物
37‧‧‧區塊空間
38‧‧‧貫通孔
50‧‧‧吸附部
51‧‧‧工作台
52‧‧‧抽吸部
70‧‧‧吸具
80‧‧‧作為經切斷之晶片的集合體的經單片化之晶圓
100‧‧‧拾取裝置
第1圖係為使用於本發明之附有接著劑之晶片的製造方法之定位夾具的概要剖面圖。
第2圖係為構成第1圖所示之定位夾具的夾具基座之概要平面圖。
第3圖之第3圖(A)係為顯示第1實施態樣之步驟1A的狀態之概要剖面圖;第3圖(B)係為顯示第1實施態樣之步驟1B的狀態之概要剖面圖;第3圖(C)係為顯示第1實施態樣之步驟1C的狀態之概要剖面圖。
第4圖係為使用於本發明之切割前的半導體晶圓之概要平面圖。
第5圖係為將保護用黏著片貼附於晶圓時之貼附步驟的概要剖面圖。
第6圖係為背面研磨步驟之概要剖面圖。
第7圖係為將接著片貼附於晶圓時之貼附步驟的概要剖面圖。
第8圖係為使用於拾取之拾取裝置的概要剖面圖。
第9圖係為本發明之第1實施態樣中在定位夾具上拾取時的概要剖面圖。
第10圖之第10圖(A)係為顯示第2實施態樣之步驟2A的狀態之概要剖面圖;第10圖(B)係為顯示第2實施態樣之步驟2B的狀態之概要剖面圖;第10圖(C)係為顯示第2實施態樣之步驟2C的狀態之概要剖面圖。
第11圖之第11圖(A)係為顯示第3實施態樣之步驟3A的狀態之概要剖面圖;第11圖(B)係為顯示第3實施態樣之步驟3B的狀態之概要剖面圖;第11圖(C)係為顯示第3實施態樣之步驟3C的狀態之概要剖面圖。
第12圖係為自晶圓剝離保護用黏著片時之剝離步驟的概要剖面圖。
第13圖之第13圖(A)係為顯示第4實施態樣之步驟4A的狀態之概要剖面圖;第13圖(B)係為顯示第4實施態樣之步驟4B的狀態之概要剖面圖;第13圖(C)係為顯示第4實施態樣之步驟4C的狀態之概要剖面圖。
1‧‧‧晶圓
13‧‧‧晶片
Claims (8)
- 一種附有接著劑之晶片的製造方法,該方法係:對於切斷裝置及拾取裝置之兩者在以個別形成的定位夾具之密著層上作成層積著接著晶片接著劑層以及晶圓的狀態,經由將上述晶圓以及上述接著晶片接著劑層藉切斷裝置完全切斷而形成晶片,其後,將固定了上述晶片之上述定位夾具從上述切斷裝置移載至上述拾取裝置,在上述拾取裝置上使上述定位夾具之上述密著層變形,藉此而將上述晶片與上述接著晶片接著劑層一起自上述定位夾具拾取;其中,上述定位夾具包含:上述密著層與在一面具有複數之凸出物且在該一面之外緣部具有與該凸出物約為相同高度的側壁之夾具基座;而上述密著層層積於具有上述夾具基座之上述凸出物的面上,並接著於上述側壁的上面,而在具有上述夾具基座之上述凸出物的面,藉由上述密著層、上述凸出物、以及上述側壁形成區塊空間,在上述夾具基座,設置貫通外部與上述區塊空間之至少1個貫通孔,介由上述定位夾具之上述貫通孔而抽吸上述區塊空間內的空氣,藉此可使上述密著層產生變形。
- 如申請專利範圍第1項之附有接著劑之晶片的製造方法,該方法係在上述定位夾具之上述密著層上隔著剝離片作成依序層積上述接著晶片接著劑層以及上述晶圓之狀態。
- 如申請專利範圍第1項之附有接著劑之晶片的製造方法,該方法係在上述定位夾具之上述密著層上隔著保護用黏著片作成依序層積上述晶圓以及上述接著晶片接著劑層之狀態。
- 如申請專利範圍第1項或第3項之附有接著劑之晶片的製造方法,該方法係在上述定位夾具之上述密著層上作成依序層積上述晶圓以及上述接著晶片接著劑層,還有用以保護上述接著晶片接著劑層之剝離片的狀態。
- 一種附有接著劑之晶片的製造方法,該方法係:對於切斷裝置及拾取裝置之兩者在以個別形成的定位夾具之密著層上作成層積著接著晶片接著劑層以及經單片化之晶圓的狀態,經由配合晶片的外形而藉切斷裝置完全切斷上述接著晶片接著劑層,其後,將固定了上述接著晶片接著層及個別化的晶圓之上述定位夾具從上述切斷裝置移載至上述拾取裝置,在上述拾取裝置上而使上述定位夾具之上述密著層變形,藉此而將上述晶片與上述接著晶片接著劑層一起自上述定位夾具拾取;其中,上述定位夾具包含:上述密著層與在一面具有複數之凸出物且在該一面之外緣部具有與該凸出物約為相同高度的側壁之夾具基座;而上述密著層層積於具有上述夾具基座之上述凸出物的面上,並接著於上述側壁的上面,而在具有上述夾具基座之上述凸出物的面,藉由上述密著層、上述凸出物、以及上述側壁形成區塊空間,在上述夾具基座, 設置貫通外部與上述區塊空間之至少1個貫通孔,介由上述定位夾具之上述貫通孔而抽吸上述區塊空間內的空氣,藉此可使上述密著層產生變形。
- 如申請專利範圍第5項之附有接著劑之晶片的製造方法,該方法係在上述定位夾具之上述密著層上隔著剝離片而作成依序層積上述接著晶片接著劑層以及上述經單片化之晶圓之狀態。
- 如申請專利範圍第5項之附有接著劑之晶片的製造方法,該方法係在上述定位夾具之上述密著層上隔著保護用黏著片作成依序層積上述經單片化之晶圓以及上述接著晶片接著劑層之狀態。
- 如申請專利範圍第5項或第7項之附有接著劑之晶片的製造方法,該方法係在上述定位夾具之上述密著層上作成依序層積上述經單片化之上述晶圓以及上述接著晶片接著劑層,還有用以保護上述接著晶片接著劑層之剝離片的狀態。
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JP2008270345A (ja) | 2008-11-06 |
WO2008129976A1 (ja) | 2008-10-30 |
TW200901365A (en) | 2009-01-01 |
KR101399690B1 (ko) | 2014-06-27 |
US8691666B2 (en) | 2014-04-08 |
CN101657890B (zh) | 2012-06-06 |
US20100144120A1 (en) | 2010-06-10 |
CN101657890A (zh) | 2010-02-24 |
JP5196838B2 (ja) | 2013-05-15 |
KR20100016559A (ko) | 2010-02-12 |
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