JPWO2020195808A1 - - Google Patents
Info
- Publication number
- JPWO2020195808A1 JPWO2020195808A1 JP2021508991A JP2021508991A JPWO2020195808A1 JP WO2020195808 A1 JPWO2020195808 A1 JP WO2020195808A1 JP 2021508991 A JP2021508991 A JP 2021508991A JP 2021508991 A JP2021508991 A JP 2021508991A JP WO2020195808 A1 JPWO2020195808 A1 JP WO2020195808A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/50—Working by transmitting the laser beam through or within the workpiece
- B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
- H01L2221/68336—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding involving stretching of the auxiliary support post dicing
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Optics & Photonics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Chemical & Material Sciences (AREA)
- Plasma & Fusion (AREA)
- Mechanical Engineering (AREA)
- Dicing (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2019058591 | 2019-03-26 | ||
PCT/JP2020/010413 WO2020195808A1 (ja) | 2019-03-26 | 2020-03-11 | 半導体装置の製造方法及び積層体 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPWO2020195808A1 true JPWO2020195808A1 (zh) | 2020-10-01 |
Family
ID=72608689
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2021508991A Pending JPWO2020195808A1 (zh) | 2019-03-26 | 2020-03-11 |
Country Status (5)
Country | Link |
---|---|
JP (1) | JPWO2020195808A1 (zh) |
KR (1) | KR20210142584A (zh) |
CN (1) | CN113165121B (zh) |
TW (1) | TW202101551A (zh) |
WO (1) | WO2020195808A1 (zh) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7366435B2 (ja) * | 2021-01-15 | 2023-10-23 | 古河電気工業株式会社 | ウェハ研削用粘着テープおよびウェハの加工方法 |
Family Cites Families (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH028014A (ja) * | 1988-06-28 | 1990-01-11 | Toshiba Corp | 半導体基板のブレーキング装置 |
JPH04252036A (ja) * | 1991-01-10 | 1992-09-08 | Fujitsu Ltd | 半導体装置 |
US5939777A (en) * | 1996-12-06 | 1999-08-17 | Texas Instruments Incorporated | High aspect ratio integrated circuit chip and method for producing the same |
JPH10242084A (ja) * | 1997-02-24 | 1998-09-11 | Lintec Corp | ウェハ貼着用粘着シートおよび電子部品の製造方法 |
JP2000061785A (ja) * | 1998-08-24 | 2000-02-29 | Nitto Denko Corp | 保護シート貼付半導体ウエハ及び半導体ウエハの研削方法 |
JP2004165570A (ja) * | 2002-11-15 | 2004-06-10 | Nitto Denko Corp | 半導体ウエハからの保護テープ除去方法およびその装置 |
JP2005175384A (ja) * | 2003-12-15 | 2005-06-30 | Nitto Denko Corp | 保護テープの貼付方法及び剥離方法 |
JP4689972B2 (ja) * | 2004-05-26 | 2011-06-01 | リンテック株式会社 | ウエハ処理装置及びウエハ処理方法 |
JP2006100413A (ja) * | 2004-09-28 | 2006-04-13 | Tokyo Seimitsu Co Ltd | フィルム貼付方法およびフィルム貼付装置 |
CN101297393B (zh) * | 2005-11-24 | 2010-05-12 | 株式会社瑞萨科技 | 半导体器件的制造方法 |
JP4791843B2 (ja) * | 2006-02-14 | 2011-10-12 | 株式会社ディスコ | 接着フィルム付きデバイスの製造方法 |
JP5196838B2 (ja) * | 2007-04-17 | 2013-05-15 | リンテック株式会社 | 接着剤付きチップの製造方法 |
JP2009176977A (ja) * | 2008-01-25 | 2009-08-06 | Seiko Epson Corp | 半導体チップ及びその製造方法 |
JP2009200140A (ja) * | 2008-02-20 | 2009-09-03 | Disco Abrasive Syst Ltd | 半導体チップの製造方法 |
US8043940B2 (en) * | 2008-06-02 | 2011-10-25 | Renesas Electronics Corporation | Method for manufacturing semiconductor chip and semiconductor device |
JP5158896B2 (ja) * | 2010-08-09 | 2013-03-06 | 古河電気工業株式会社 | 半導体チップの製造方法 |
JP6033116B2 (ja) * | 2013-02-22 | 2016-11-30 | 株式会社ディスコ | 積層ウェーハの加工方法および粘着シート |
KR102528047B1 (ko) * | 2015-05-25 | 2023-05-02 | 린텍 가부시키가이샤 | 반도체 장치의 제조 방법 |
JP6614865B2 (ja) * | 2015-09-01 | 2019-12-04 | リンテック株式会社 | シート貼付装置およびシート貼付方法 |
JP6713212B2 (ja) | 2016-07-06 | 2020-06-24 | 株式会社ディスコ | 半導体デバイスチップの製造方法 |
JP6775880B2 (ja) * | 2016-09-21 | 2020-10-28 | 株式会社ディスコ | ウェーハの加工方法 |
JP2018133496A (ja) * | 2017-02-16 | 2018-08-23 | パナソニックIpマネジメント株式会社 | 素子チップの製造方法 |
-
2020
- 2020-03-11 JP JP2021508991A patent/JPWO2020195808A1/ja active Pending
- 2020-03-11 KR KR1020217014295A patent/KR20210142584A/ko unknown
- 2020-03-11 WO PCT/JP2020/010413 patent/WO2020195808A1/ja active Application Filing
- 2020-03-11 CN CN202080006808.4A patent/CN113165121B/zh active Active
- 2020-03-18 TW TW109108956A patent/TW202101551A/zh unknown
Also Published As
Publication number | Publication date |
---|---|
CN113165121A (zh) | 2021-07-23 |
WO2020195808A1 (ja) | 2020-10-01 |
KR20210142584A (ko) | 2021-11-25 |
CN113165121B (zh) | 2023-12-05 |
TW202101551A (zh) | 2021-01-01 |
Similar Documents
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