KR20210142584A - 반도체 장치의 제조 방법 및 적층체 - Google Patents

반도체 장치의 제조 방법 및 적층체 Download PDF

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Publication number
KR20210142584A
KR20210142584A KR1020217014295A KR20217014295A KR20210142584A KR 20210142584 A KR20210142584 A KR 20210142584A KR 1020217014295 A KR1020217014295 A KR 1020217014295A KR 20217014295 A KR20217014295 A KR 20217014295A KR 20210142584 A KR20210142584 A KR 20210142584A
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KR
South Korea
Prior art keywords
wafer
adhesive sheet
semiconductor device
manufacturing
region
Prior art date
Application number
KR1020217014295A
Other languages
English (en)
Korean (ko)
Inventor
유스케 후미타
신야 다큐
가즈토 아이자와
유야 하세가와
Original Assignee
린텍 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 린텍 가부시키가이샤 filed Critical 린텍 가부시키가이샤
Publication of KR20210142584A publication Critical patent/KR20210142584A/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/50—Working by transmitting the laser beam through or within the workpiece
    • B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H01L2221/68336—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding involving stretching of the auxiliary support post dicing

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Chemical & Material Sciences (AREA)
  • Dicing (AREA)
KR1020217014295A 2019-03-26 2020-03-11 반도체 장치의 제조 방법 및 적층체 KR20210142584A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2019058591 2019-03-26
JPJP-P-2019-058591 2019-03-26
PCT/JP2020/010413 WO2020195808A1 (ja) 2019-03-26 2020-03-11 半導体装置の製造方法及び積層体

Publications (1)

Publication Number Publication Date
KR20210142584A true KR20210142584A (ko) 2021-11-25

Family

ID=72608689

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020217014295A KR20210142584A (ko) 2019-03-26 2020-03-11 반도체 장치의 제조 방법 및 적층체

Country Status (5)

Country Link
JP (1) JPWO2020195808A1 (zh)
KR (1) KR20210142584A (zh)
CN (1) CN113165121B (zh)
TW (1) TW202101551A (zh)
WO (1) WO2020195808A1 (zh)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7366435B2 (ja) * 2021-01-15 2023-10-23 古河電気工業株式会社 ウェハ研削用粘着テープおよびウェハの加工方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018006653A (ja) 2016-07-06 2018-01-11 株式会社ディスコ 半導体デバイスチップの製造方法

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Publication number Priority date Publication date Assignee Title
JPH028014A (ja) * 1988-06-28 1990-01-11 Toshiba Corp 半導体基板のブレーキング装置
JPH04252036A (ja) * 1991-01-10 1992-09-08 Fujitsu Ltd 半導体装置
KR19980063858A (ko) * 1996-12-06 1998-10-07 윌리엄비.켐플러 높은 종횡비를 갖는 집적 회로 칩 및 그 제조 방법
JPH10242084A (ja) * 1997-02-24 1998-09-11 Lintec Corp ウェハ貼着用粘着シートおよび電子部品の製造方法
JP2000061785A (ja) * 1998-08-24 2000-02-29 Nitto Denko Corp 保護シート貼付半導体ウエハ及び半導体ウエハの研削方法
JP2004165570A (ja) * 2002-11-15 2004-06-10 Nitto Denko Corp 半導体ウエハからの保護テープ除去方法およびその装置
JP2005175384A (ja) * 2003-12-15 2005-06-30 Nitto Denko Corp 保護テープの貼付方法及び剥離方法
JP4689972B2 (ja) * 2004-05-26 2011-06-01 リンテック株式会社 ウエハ処理装置及びウエハ処理方法
JP2006100413A (ja) * 2004-09-28 2006-04-13 Tokyo Seimitsu Co Ltd フィルム貼付方法およびフィルム貼付装置
WO2007060724A1 (ja) * 2005-11-24 2007-05-31 Renesas Technology Corp. 半導体装置の製造方法
JP4791843B2 (ja) * 2006-02-14 2011-10-12 株式会社ディスコ 接着フィルム付きデバイスの製造方法
JP5196838B2 (ja) * 2007-04-17 2013-05-15 リンテック株式会社 接着剤付きチップの製造方法
JP2009176977A (ja) * 2008-01-25 2009-08-06 Seiko Epson Corp 半導体チップ及びその製造方法
JP2009200140A (ja) * 2008-02-20 2009-09-03 Disco Abrasive Syst Ltd 半導体チップの製造方法
US8043940B2 (en) * 2008-06-02 2011-10-25 Renesas Electronics Corporation Method for manufacturing semiconductor chip and semiconductor device
JP5158896B2 (ja) * 2010-08-09 2013-03-06 古河電気工業株式会社 半導体チップの製造方法
JP6033116B2 (ja) * 2013-02-22 2016-11-30 株式会社ディスコ 積層ウェーハの加工方法および粘着シート
SG11201709671YA (en) * 2015-05-25 2017-12-28 Lintec Corp Semiconductor device manufacturing method
JP6614865B2 (ja) * 2015-09-01 2019-12-04 リンテック株式会社 シート貼付装置およびシート貼付方法
JP6775880B2 (ja) * 2016-09-21 2020-10-28 株式会社ディスコ ウェーハの加工方法
JP2018133496A (ja) * 2017-02-16 2018-08-23 パナソニックＩｐマネジメント株式会社 素子チップの製造方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018006653A (ja) 2016-07-06 2018-01-11 株式会社ディスコ 半導体デバイスチップの製造方法

Also Published As

Publication number Publication date
JPWO2020195808A1 (zh) 2020-10-01
CN113165121A (zh) 2021-07-23
CN113165121B (zh) 2023-12-05
WO2020195808A1 (ja) 2020-10-01
TW202101551A (zh) 2021-01-01

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