TWI749465B - 積體電路的轉移封裝方法 - Google Patents

積體電路的轉移封裝方法 Download PDF

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TWI749465B
TWI749465B TW109104736A TW109104736A TWI749465B TW I749465 B TWI749465 B TW I749465B TW 109104736 A TW109104736 A TW 109104736A TW 109104736 A TW109104736 A TW 109104736A TW I749465 B TWI749465 B TW I749465B
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pins
bonding
integrated circuit
bare chips
transfer
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TW202131481A (zh
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楊立昌
林益勝
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聚積科技股份有限公司
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Priority to CN202110029388.8A priority patent/CN113270332A/zh
Priority to US17/248,374 priority patent/US11715644B2/en
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Abstract

一種積體電路的轉移封裝方法包含一提供步驟、一轉移步驟，及一鍵合步驟。該提供步驟是提供多個裸晶片，及一包括多個鍵合區的導線架，該導線架的每一該鍵合區具有一晶片座、多支與該晶片座連接的引腳，及多個分別設置在每一該引腳上且位在該晶片座的焊墊。該轉移步驟將部份的該等裸晶片分別轉移至該導線架對應的該等晶片座上。該鍵合步驟以覆晶方式將該等裸晶片對位在該等引腳的該等焊墊上，並透過熱壓方式直接將該等裸晶片分別鍵合在該等晶片座。

Description

積體電路的轉移封裝方法
本發明是有關於一種半導體製程方法，特別是指一種積體電路的轉移封裝方法。
在積體電路(integrated circuits，IC)的前段生產製程所生產的裸晶片(die)主要是經由晶圓製作、電路設計，及晶圓切割等步驟製作而成，隨後將各別的裸晶片透過打線接合(wire bonding)或覆晶接合(flip chip bonding)方式電連接至一導線架(lead frame)上，最後再進行整體的封裝製程。
其中，將裸晶片透過打線接合(wire bonding)電連接至導線架的製程中，除了需要考量焊線選用的成本與其長度造成的訊號傳遞影響之外，其製程繁複也是此接合方式的缺點；而透過覆晶接合(flip chip bonding)方式將裸晶片電連接至導線架的製程中，雖然省略了焊線而無須進行打線步驟，但需要先對裸晶片進行凸塊製程(bumping)，也就是在裸晶片上先形成例如由錫球構成的凸塊，才能透過凸塊與導線架焊接接合。
因此，無論是打線接合需使用焊線進行打線，或覆晶接合(flip chip bonding)需先行進行凸塊製程(bumping)，均導致現有裸晶片在接合至導電架的製程中，無法有效提升其製程效率。
因此，本發明的目的，即在提供一種積體電路的轉移封裝方法。
於是，本發明積體電路的轉移封裝方法包含一提供步驟、一轉移步驟，及一鍵合步驟。
該提供步驟是提供多個裸晶片，及一包括多個鍵合區的導線架，該導線架的每一該鍵合區具有一晶片座、多支與該晶片座連接的引腳，及多個分別設置在每一該引腳上且位在該晶片座的焊墊。
該轉移步驟將部份的該等裸晶片分別轉移至該導線架對應的該等晶片座上。
該鍵合步驟以覆晶(flip chip)方式將該等裸晶片對位在該等引腳的該等焊墊上，並透過熱壓方式直接將該等裸晶片分別鍵合在該等晶片座。
本發明之功效在於，先行提供在該等引腳上設置有焊墊的導線架，並一次將多個裸晶片以覆晶(flip chip)方式進行轉移而對位在對應的焊墊上，再透過熱壓方式直接將該等裸晶片分別鍵合在該等晶片座，省略現有凸塊製程(bumping)有效提升製程效率。
在本發明被詳細描述前，應當注意在以下的說明內容中，類似的元件是以相同的編號來表示。
參閱圖1至圖3，本發明積體電路的轉移封裝方法包含一提供步驟101、一轉移步驟102、一鍵合步驟103、一封裝步驟104，及一剪切步驟105。
該提供步驟101提供多個裸晶片2，及一導線架(lead frame)3。該等裸晶片2是由一已製作具有微電路的晶圓(wafer)20上分割而得，也就是說，該等裸晶片2可視為一未封裝的積體電路(IC)。
該導線架3適用於供該等裸晶片2設置及後續封裝使用，該導線架3為金屬製且呈片狀，該導線架3包括多個陣列排列的鍵合區30，且每一該鍵合區30具有一晶片座31、多支由與該晶片座31連接的引腳32，及多個分別設置在每一該引腳32上且位在該晶片座31的焊墊33。
具體地說，本實施例中所提供的該導線架3的該等引腳32是內伸至該晶片座31而與該晶片座31連接，並在該等引腳32與該晶片座31的連接處分別設置位在該晶片座31設的該等焊墊33；其中，該等引腳32的數量沒有特別限制，鄰近的該鍵合區30的該等引腳32數量可以相同也可以不同，於本實施例中，該導線架3的的每一個鍵合區30的該等引腳32數量是以二十四支為例做說明，但不以此為限，此外，該等焊墊33的構成材料則是以焊錫為例做說明。
參閱圖1、圖2及圖4，該轉移步驟102主要是將部份的該等裸晶片2分別轉移至該導線架3對應的該等晶片座31上。詳細地說，先將該晶圓20固定於一例如藍膜(blue tape)的膠層(圖未示)，並對該晶圓20進行切割而形成多個裸晶片2，接著再將膠層上的該等裸晶片2轉移至一暫時基板(圖未示)上，隨後透過一吸取裝置4將該暫時基板上的該等裸晶片2轉移至該等晶片座31上，從而完成該轉移步驟102。
參閱圖1、圖4及圖5，在完成該轉移步驟102而將該等裸晶片2轉移到該晶片座3上方後，接著進行該鍵合步驟103，以覆晶(flip chip)方式將該等裸晶片2對位在該等引腳32的該等焊墊33上，並透過熱壓方式直接將該等裸晶片2分別鍵合(bonding)在該等晶片座3上，即可完成該鍵合步驟103。
透過先提供在該等引腳32上設置有焊墊33的導線架3，並一次將多個裸晶片2進行轉移而以覆晶(flip chip)方式對位在對應的焊墊33上，再直接以熱壓方式將該等裸晶片2進行鍵合(bonding)在該等晶片座31，省略現有的凸塊製程(bumping)，從而有效提升積體電路的轉移封裝整體的製程效率。
在轉移並透過熱壓鍵合該等裸晶片2於該導線架3上後，接著即可進行該封裝步驟104，也就是進行封膠(molding)步驟，將具有多個鍵合完成的裸晶片2的導線架3置於一壓模機(圖未示)，透過例如樹脂的封裝膠5包覆該等裸晶片2而露出該等引腳32，從而完成該封裝步驟104。
參閱圖1、圖5，及圖6，待該封裝步驟104完成後，即可進行最後的該剪切步驟105，剪切該等引腳32讓具有該封裝膠5的的該等裸晶片2彼此分開，並對該等引腳32進行彎曲成型，而得到一封裝完成且具有多個引腳32的積體電路6。
綜上所述，本發明積體電路的轉移封裝方法，先行提供具有多支引腳32的導電架3，且先在該等引腳32上設置有焊墊33，再一次將多個裸晶片2以覆晶(flip chip)方式進行轉移而對位在對應的焊墊33上，隨即透過熱壓方式將該等裸晶片2直接鍵合在該等晶片座33，省略現有凸塊製程(bumping)，從而有效提升積體電路的轉移封裝整體的製程效率。，故確實能達成本發明的目的。
惟以上所述者，僅為本發明的實施例而已，當不能以此限定本發明實施的範圍，凡是依本發明申請專利範圍及專利說明書內容所作的簡單的等效變化與修飾，皆仍屬本發明專利涵蓋的範圍內。
101:提供步驟 102:轉移步驟 103:鍵合步驟 104:封裝步驟 105:剪切步驟 2:裸晶片 20:晶圓 3:導線架 30:鍵合區 31:晶片座 32:引腳 33:焊墊 4:吸取裝置 5:封裝膠 6:積體電路
本發明的其他的特徵及功效，將於參照圖式的實施方式中清楚地呈現，其中： 圖1是一流程圖，說明本發明積體電路的轉移封裝方法的一實施例； 圖2是一俯視示意圖，說明本發明積體電路的轉移封裝方法的一提供步驟中提供的多個裸晶片； 圖3是一俯視示意圖，說明本發明積體電路的轉移封裝方法的該提供步驟中提供的一導線架； 圖4是一局部剖視示意圖，說明本發明積體電路的轉移封裝方法的一轉移步驟與一鍵合步驟； 圖5是一剖視示意圖，輔助圖4說明本發明積體電路的轉移封裝方法的一封裝步驟；及 圖6是一立體示意圖，說明本發明積體電路的轉移封裝方法實施一剪切步驟所得的一積體電路。
101:提供步驟
102:轉移步驟
103:鍵合步驟
104:封裝步驟
105:剪切步驟

Claims (4)

  1. 一種積體電路的轉移封裝方法，包含：一提供步驟，提供多個裸晶片，及一包括多個鍵合區的導線架，該導線架的每一該鍵合區具有一晶片座、多支與該晶片座連接的引腳，及多個分別設置在每一該引腳上且位在該晶片座的焊墊；一轉移步驟，先將部分的該等裸晶片轉移至一暫時基板，再透過一吸取裝置將該暫時基板上部份的該等裸晶片分別轉移至該導線架對應的該等晶片座上；及一鍵合步驟，以覆晶方式將該等裸晶片對位在該等引腳的該等焊墊上，並透過熱壓方式直接將該等裸晶片分別鍵合在該等晶片座。
  2. 如請求項1所述的積體電路的轉移封裝方法，還包含一實施在該鍵合步驟之後的封裝步驟，將封裝膠覆蓋該等裸晶片並露出該等引腳。
  3. 如請求項2所述的積體電路的轉移封裝方法，還包含一實施在該封裝步驟之後的剪切步驟，剪切該等引腳而得到一具有多個引腳的積體電路。
  4. 如請求項1所述的積體電路的轉移封裝方法，其中，該裸晶片為一未封裝的積體電路。
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