JP5193503B2 - 貫通電極付き基板及びその製造方法 - Google Patents

貫通電極付き基板及びその製造方法 Download PDF

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Publication number
JP5193503B2
JP5193503B2 JP2007148182A JP2007148182A JP5193503B2 JP 5193503 B2 JP5193503 B2 JP 5193503B2 JP 2007148182 A JP2007148182 A JP 2007148182A JP 2007148182 A JP2007148182 A JP 2007148182A JP 5193503 B2 JP5193503 B2 JP 5193503B2
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Japan
Prior art keywords
electrode
substrate
hole
layer
resin
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JP2007148182A
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English (en)
Japanese (ja)
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JP2008300782A (ja
JP2008300782A5 (https=
Inventor
孝治 山野
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Shinko Electric Industries Co Ltd
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Shinko Electric Industries Co Ltd
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Priority to JP2007148182A priority Critical patent/JP5193503B2/ja
Priority to KR1020080051603A priority patent/KR20080106844A/ko
Priority to TW097120562A priority patent/TW200850096A/zh
Priority to US12/132,187 priority patent/US8349733B2/en
Priority to EP08157592A priority patent/EP2001274A3/en
Priority to CNA2008101086822A priority patent/CN101320695A/zh
Publication of JP2008300782A publication Critical patent/JP2008300782A/ja
Publication of JP2008300782A5 publication Critical patent/JP2008300782A5/ja
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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
    • H05K3/06—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/021—Manufacture or treatment of interconnections within wafers or substrates
    • H10W20/023—Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
    • H05K3/4038—Through-connections; Vertical interconnect access [VIA] connections
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
    • H05K3/42—Plated through-holes or plated via connections
    • H05K3/423—Plated through-holes or plated via connections characterised by electroplating method
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/46—Manufacturing multilayer circuits
    • H05K3/4602—Manufacturing multilayer circuits characterized by a special circuit board as base or central core whereon additional circuit layers are built or additional circuit boards are laminated
    • H05K3/4605—Manufacturing multilayer circuits characterized by a special circuit board as base or central core whereon additional circuit layers are built or additional circuit boards are laminated made from inorganic insulating material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/021—Manufacture or treatment of interconnections within wafers or substrates
    • H10W20/023—Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias
    • H10W20/0261—Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias characterised by the filling method or the material of the conductive fill
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/021—Manufacture or treatment of interconnections within wafers or substrates
    • H10W20/023—Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias
    • H10W20/0265—Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias characterised by the sidewall insulation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/01—Manufacture or treatment
    • H10W70/05—Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers
    • H10W70/095—Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers of vias therein
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/03—Use of materials for the substrate
    • H05K1/0306—Inorganic insulating substrates, e.g. ceramic, glass
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/09—Shape and layout
    • H05K2201/09209—Shape and layout details of conductors
    • H05K2201/09654—Shape and layout details of conductors covering at least two types of conductors provided for in H05K2201/09218 - H05K2201/095
    • H05K2201/0979—Redundant conductors or connections, i.e. more than one current path between two points
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/03—Metal processing
    • H05K2203/0376—Etching temporary metallic carrier substrate
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/06—Lamination
    • H05K2203/063—Lamination of preperforated insulating layer
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/07—Treatments involving liquids, e.g. plating, rinsing
    • H05K2203/0703—Plating
    • H05K2203/0733—Method for plating stud vias, i.e. massive vias formed by plating the bottom of a hole without plating on the walls
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/20—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern by affixing prefabricated conductor pattern
    • H05K3/205—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern by affixing prefabricated conductor pattern using a pattern electroplated or electroformed on a metallic carrier
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/46—Manufacturing multilayer circuits
    • H05K3/4644—Manufacturing multilayer circuits by building the multilayer layer by layer, i.e. build-up multilayer circuits
    • H05K3/4647—Manufacturing multilayer circuits by building the multilayer layer by layer, i.e. build-up multilayer circuits by applying an insulating layer around previously made via studs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/67—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
    • H10W70/69—Insulating materials thereof
    • H10W70/698—Semiconductor materials that are electrically insulating, e.g. undoped silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/401—Package configurations characterised by multiple insulating or insulated package substrates, interposers or RDLs

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrostatic, Electromagnetic, Magneto- Strictive, And Variable-Resistance Transducers (AREA)
  • Pressure Sensors (AREA)
  • Printers Or Recording Devices Using Electromagnetic And Radiation Means (AREA)
  • Printing Elements For Providing Electric Connections Between Printed Circuits (AREA)
JP2007148182A 2007-06-04 2007-06-04 貫通電極付き基板及びその製造方法 Active JP5193503B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2007148182A JP5193503B2 (ja) 2007-06-04 2007-06-04 貫通電極付き基板及びその製造方法
KR1020080051603A KR20080106844A (ko) 2007-06-04 2008-06-02 관통 전극을 갖는 기판의 제조 방법
US12/132,187 US8349733B2 (en) 2007-06-04 2008-06-03 Manufacturing method of substrate with through electrode
TW097120562A TW200850096A (en) 2007-06-04 2008-06-03 Manufacturing method of substrate with through electrode
EP08157592A EP2001274A3 (en) 2007-06-04 2008-06-04 Manufacturing method of substrate with through electrodes
CNA2008101086822A CN101320695A (zh) 2007-06-04 2008-06-04 带穿通电极的基板的制造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007148182A JP5193503B2 (ja) 2007-06-04 2007-06-04 貫通電極付き基板及びその製造方法

Publications (3)

Publication Number Publication Date
JP2008300782A JP2008300782A (ja) 2008-12-11
JP2008300782A5 JP2008300782A5 (https=) 2010-05-20
JP5193503B2 true JP5193503B2 (ja) 2013-05-08

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007148182A Active JP5193503B2 (ja) 2007-06-04 2007-06-04 貫通電極付き基板及びその製造方法

Country Status (6)

Country Link
US (1) US8349733B2 (https=)
EP (1) EP2001274A3 (https=)
JP (1) JP5193503B2 (https=)
KR (1) KR20080106844A (https=)
CN (1) CN101320695A (https=)
TW (1) TW200850096A (https=)

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US8288872B2 (en) * 2008-08-05 2012-10-16 Taiwan Semiconductor Manufacturing Company, Ltd. Through silicon via layout
US8294240B2 (en) * 2009-06-08 2012-10-23 Qualcomm Incorporated Through silicon via with embedded decoupling capacitor
KR101095373B1 (ko) * 2010-04-22 2011-12-16 재단법인 서울테크노파크 장벽층을 갖는 범프를 포함하는 반도체칩 및 그 제조방법
JP5547566B2 (ja) * 2010-06-29 2014-07-16 株式会社アドバンテスト 貫通配線基板の製造方法
JP5485818B2 (ja) * 2010-06-29 2014-05-07 株式会社アドバンテスト 貫通配線基板および製造方法
KR20120012602A (ko) * 2010-08-02 2012-02-10 삼성전자주식회사 반도체 장치, 그 제조 방법 및 반도체 패키지의 제조 방법
US8472207B2 (en) * 2011-01-14 2013-06-25 Harris Corporation Electronic device having liquid crystal polymer solder mask and outer sealing layers, and associated methods
US8693203B2 (en) 2011-01-14 2014-04-08 Harris Corporation Method of making an electronic device having a liquid crystal polymer solder mask laminated to an interconnect layer stack and related devices
JP2012156327A (ja) 2011-01-26 2012-08-16 Elpida Memory Inc 半導体装置、及び積層型半導体装置
KR101806806B1 (ko) 2011-12-20 2017-12-11 삼성전자주식회사 전자 소자 탑재용 기판의 제조방법
JP5878362B2 (ja) * 2011-12-22 2016-03-08 新光電気工業株式会社 半導体装置、半導体パッケージ及び半導体装置の製造方法
TWI475623B (zh) * 2011-12-27 2015-03-01 財團法人工業技術研究院 堆疊式半導體結構的接合結構及其形成方法
CN104051369A (zh) * 2014-07-02 2014-09-17 上海朕芯微电子科技有限公司 一种用于2.5d封装的中间互联层及其制备方法
JP2016039512A (ja) * 2014-08-08 2016-03-22 キヤノン株式会社 電極が貫通配線と繋がったデバイス、及びその製造方法
US10431533B2 (en) * 2014-10-31 2019-10-01 Ati Technologies Ulc Circuit board with constrained solder interconnect pads
KR102494336B1 (ko) * 2015-10-07 2023-02-01 삼성전기주식회사 인쇄회로기판 및 그 제조방법
WO2017164043A1 (ja) * 2016-03-25 2017-09-28 住友精密工業株式会社 充填方法
US20190140167A1 (en) * 2017-11-07 2019-05-09 Everspin Technologies, Inc. Angled surface removal process and structure relating thereto
CN108122835B (zh) * 2017-12-12 2020-11-20 华进半导体封装先导技术研发中心有限公司 转接板的制造方法及其所制造的转接板
WO2022158109A1 (ja) * 2021-01-19 2022-07-28 ソニーセミコンダクタソリューションズ株式会社 半導体装置、および、半導体装置の製造方法
CN113021172A (zh) * 2021-03-25 2021-06-25 中国电子科技集团公司第五十四研究所 一种带腔ltcc基板的研磨抛光方法

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US7863189B2 (en) * 2007-01-05 2011-01-04 International Business Machines Corporation Methods for fabricating silicon carriers with conductive through-vias with low stress and low defect density
JP5302522B2 (ja) * 2007-07-02 2013-10-02 スパンション エルエルシー 半導体装置及びその製造方法

Also Published As

Publication number Publication date
EP2001274A2 (en) 2008-12-10
JP2008300782A (ja) 2008-12-11
US20080299768A1 (en) 2008-12-04
KR20080106844A (ko) 2008-12-09
CN101320695A (zh) 2008-12-10
EP2001274A3 (en) 2009-11-11
US8349733B2 (en) 2013-01-08
TW200850096A (en) 2008-12-16

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