JP5180012B2 - 発光装置の作製方法 - Google Patents

発光装置の作製方法 Download PDF

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Publication number
JP5180012B2
JP5180012B2 JP2008226583A JP2008226583A JP5180012B2 JP 5180012 B2 JP5180012 B2 JP 5180012B2 JP 2008226583 A JP2008226583 A JP 2008226583A JP 2008226583 A JP2008226583 A JP 2008226583A JP 5180012 B2 JP5180012 B2 JP 5180012B2
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JP
Japan
Prior art keywords
substrate
light
layer
emitting device
vapor deposition
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Expired - Fee Related
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JP2008226583A
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English (en)
Japanese (ja)
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JP2009087930A (ja
JP2009087930A5 (enExample
Inventor
吉晴 平形
寿雄 池田
浩平 横山
陽輔 佐藤
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2008226583A priority Critical patent/JP5180012B2/ja
Publication of JP2009087930A publication Critical patent/JP2009087930A/ja
Publication of JP2009087930A5 publication Critical patent/JP2009087930A5/ja
Application granted granted Critical
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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04Coating on selected surface areas, e.g. using masks
    • C23C14/048Coating on selected surface areas, e.g. using masks using irradiation by energy or particles
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10Deposition of organic active material
    • H10K71/18Deposition of organic active material using non-liquid printing techniques, e.g. thermal transfer printing from a donor sheet
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/40Thermal treatment, e.g. annealing in the presence of a solvent vapour
    • H10K71/421Thermal treatment, e.g. annealing in the presence of a solvent vapour using coherent electromagnetic radiation, e.g. laser annealing
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/60Forming conductive regions or layers, e.g. electrodes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Toxicology (AREA)
  • Optics & Photonics (AREA)
  • Health & Medical Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electroluminescent Light Sources (AREA)
JP2008226583A 2007-09-13 2008-09-04 発光装置の作製方法 Expired - Fee Related JP5180012B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008226583A JP5180012B2 (ja) 2007-09-13 2008-09-04 発光装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2007237493 2007-09-13
JP2007237493 2007-09-13
JP2008226583A JP5180012B2 (ja) 2007-09-13 2008-09-04 発光装置の作製方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2012107224A Division JP5244996B2 (ja) 2007-09-13 2012-05-09 照明装置の作製方法

Publications (3)

Publication Number Publication Date
JP2009087930A JP2009087930A (ja) 2009-04-23
JP2009087930A5 JP2009087930A5 (enExample) 2011-09-22
JP5180012B2 true JP5180012B2 (ja) 2013-04-10

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JP2008226583A Expired - Fee Related JP5180012B2 (ja) 2007-09-13 2008-09-04 発光装置の作製方法
JP2012107224A Expired - Fee Related JP5244996B2 (ja) 2007-09-13 2012-05-09 照明装置の作製方法

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JP2012107224A Expired - Fee Related JP5244996B2 (ja) 2007-09-13 2012-05-09 照明装置の作製方法

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US (1) US20090075214A1 (enExample)
JP (2) JP5180012B2 (enExample)
KR (1) KR20090028413A (enExample)

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US8425974B2 (en) * 2007-11-29 2013-04-23 Semiconductor Energy Laboratory Co., Ltd. Evaporation donor substrate and method for manufacturing light-emitting device
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US8182863B2 (en) * 2008-03-17 2012-05-22 Semiconductor Energy Laboratory Co., Ltd. Deposition method and manufacturing method of light-emitting device
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JP5159689B2 (ja) * 2008-04-25 2013-03-06 株式会社半導体エネルギー研究所 発光装置の作製方法
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KR102325208B1 (ko) 2014-08-12 2021-11-12 삼성디스플레이 주식회사 도너마스크, 이를 이용한 유기발광 디스플레이 장치 제조방법 및 유기발광 디스플레이 장치
KR20160030002A (ko) 2014-09-05 2016-03-16 삼성디스플레이 주식회사 도너마스크 및 이를 이용한 유기발광 디스플레이 장치 제조방법
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Also Published As

Publication number Publication date
JP2009087930A (ja) 2009-04-23
KR20090028413A (ko) 2009-03-18
US20090075214A1 (en) 2009-03-19
JP2012178357A (ja) 2012-09-13
JP5244996B2 (ja) 2013-07-24

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