JP2009120946A - 成膜方法および発光装置の作製方法 - Google Patents
成膜方法および発光装置の作製方法 Download PDFInfo
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- JP2009120946A JP2009120946A JP2008271476A JP2008271476A JP2009120946A JP 2009120946 A JP2009120946 A JP 2009120946A JP 2008271476 A JP2008271476 A JP 2008271476A JP 2008271476 A JP2008271476 A JP 2008271476A JP 2009120946 A JP2009120946 A JP 2009120946A
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- BHQBDOOJEZXHPS-UHFFFAOYSA-N ctk3i0272 Chemical group C1=CC=CC=C1C(C(=C(C=1C=CC=CC=1)C(=C1C=2C=CC=CC=2)C=2C3=CC=CC=C3C(C=3C4=CC=CC=C4C(C=4C(=C(C=5C=CC=CC=5)C(C=5C=CC=CC=5)=C(C=5C=CC=CC=5)C=4C=4C=CC=CC=4)C=4C=CC=CC=4)=C4C=CC=CC4=3)=C3C=CC=CC3=2)C=2C=CC=CC=2)=C1C1=CC=CC=C1 BHQBDOOJEZXHPS-UHFFFAOYSA-N 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 239000000412 dendrimer Substances 0.000 description 1
- 229920000736 dendritic polymer Polymers 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000007607 die coating method Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- HNPSIPDUKPIQMN-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Al]O[Al]=O HNPSIPDUKPIQMN-UHFFFAOYSA-N 0.000 description 1
- 238000003618 dip coating Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 239000003759 ester based solvent Substances 0.000 description 1
- 239000004210 ether based solvent Substances 0.000 description 1
- OGPBJKLSAFTDLK-UHFFFAOYSA-N europium atom Chemical compound [Eu] OGPBJKLSAFTDLK-UHFFFAOYSA-N 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 238000007756 gravure coating Methods 0.000 description 1
- 238000007646 gravure printing Methods 0.000 description 1
- RBTKNAXYKSUFRK-UHFFFAOYSA-N heliogen blue Chemical compound [Cu].[N-]1C2=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=NC([N-]1)=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=N2 RBTKNAXYKSUFRK-UHFFFAOYSA-N 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000005453 ketone based solvent Substances 0.000 description 1
- 239000003446 ligand Substances 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 239000001989 lithium alloy Substances 0.000 description 1
- PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Chemical compound [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- WOYDRSOIBHFMGB-UHFFFAOYSA-N n,9-diphenyl-n-(9-phenylcarbazol-3-yl)carbazol-3-amine Chemical compound C1=CC=CC=C1N(C=1C=C2C3=CC=CC=C3N(C=3C=CC=CC=3)C2=CC=1)C1=CC=C(N(C=2C=CC=CC=2)C=2C3=CC=CC=2)C3=C1 WOYDRSOIBHFMGB-UHFFFAOYSA-N 0.000 description 1
- AJNJGJDDJIBTBP-UHFFFAOYSA-N n-(9,10-diphenylanthracen-2-yl)-n,9-diphenylcarbazol-3-amine Chemical compound C1=CC=CC=C1N(C=1C=C2C(C=3C=CC=CC=3)=C3C=CC=CC3=C(C=3C=CC=CC=3)C2=CC=1)C1=CC=C(N(C=2C=CC=CC=2)C=2C3=CC=CC=2)C3=C1 AJNJGJDDJIBTBP-UHFFFAOYSA-N 0.000 description 1
- UMFJAHHVKNCGLG-UHFFFAOYSA-N n-Nitrosodimethylamine Chemical compound CN(C)N=O UMFJAHHVKNCGLG-UHFFFAOYSA-N 0.000 description 1
- VZYZZKOUCVXTOJ-UHFFFAOYSA-N n-[4-[4-(n-(9,9-dimethylfluoren-2-yl)anilino)phenyl]phenyl]-9,9-dimethyl-n-phenylfluoren-2-amine Chemical group C1=C2C(C)(C)C3=CC=CC=C3C2=CC=C1N(C=1C=CC(=CC=1)C=1C=CC(=CC=1)N(C=1C=CC=CC=1)C=1C=C2C(C)(C)C3=CC=CC=C3C2=CC=1)C1=CC=CC=C1 VZYZZKOUCVXTOJ-UHFFFAOYSA-N 0.000 description 1
- COVCYOMDZRYBNM-UHFFFAOYSA-N n-naphthalen-1-yl-9-phenyl-n-(9-phenylcarbazol-3-yl)carbazol-3-amine Chemical compound C1=CC=CC=C1N1C2=CC=C(N(C=3C=C4C5=CC=CC=C5N(C=5C=CC=CC=5)C4=CC=3)C=3C4=CC=CC=C4C=CC=3)C=C2C2=CC=CC=C21 COVCYOMDZRYBNM-UHFFFAOYSA-N 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910000484 niobium oxide Inorganic materials 0.000 description 1
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 description 1
- HCIIFBHDBOCSAF-UHFFFAOYSA-N octaethylporphyrin Chemical compound N1C(C=C2C(=C(CC)C(C=C3C(=C(CC)C(=C4)N3)CC)=N2)CC)=C(CC)C(CC)=C1C=C1C(CC)=C(CC)C4=N1 HCIIFBHDBOCSAF-UHFFFAOYSA-N 0.000 description 1
- 239000012788 optical film Substances 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- DYIZHKNUQPHNJY-UHFFFAOYSA-N oxorhenium Chemical compound [Re]=O DYIZHKNUQPHNJY-UHFFFAOYSA-N 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 238000010422 painting Methods 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- NFHFRUOZVGFOOS-UHFFFAOYSA-N palladium;triphenylphosphane Chemical compound [Pd].C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 NFHFRUOZVGFOOS-UHFFFAOYSA-N 0.000 description 1
- SLIUAWYAILUBJU-UHFFFAOYSA-N pentacene Chemical compound C1=CC=CC2=CC3=CC4=CC5=CC=CC=C5C=C4C=C3C=C21 SLIUAWYAILUBJU-UHFFFAOYSA-N 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 125000002080 perylenyl group Chemical group C1(=CC=C2C=CC=C3C4=CC=CC5=CC=CC(C1=C23)=C45)* 0.000 description 1
- CSHWQDPOILHKBI-UHFFFAOYSA-N peryrene Natural products C1=CC(C2=CC=CC=3C2=C2C=CC=3)=C3C2=CC=CC3=C1 CSHWQDPOILHKBI-UHFFFAOYSA-N 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000011295 pitch Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- HRGDZIGMBDGFTC-UHFFFAOYSA-N platinum(2+) Chemical compound [Pt+2] HRGDZIGMBDGFTC-UHFFFAOYSA-N 0.000 description 1
- 229920000172 poly(styrenesulfonic acid) Polymers 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- VLRICFVOGGIMKK-UHFFFAOYSA-N pyrazol-1-yloxyboronic acid Chemical compound OB(O)ON1C=CC=N1 VLRICFVOGGIMKK-UHFFFAOYSA-N 0.000 description 1
- 238000010791 quenching Methods 0.000 description 1
- 230000000171 quenching effect Effects 0.000 description 1
- 125000002943 quinolinyl group Chemical group N1=C(C=CC2=CC=CC=C12)* 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 229910003449 rhenium oxide Inorganic materials 0.000 description 1
- 229910001925 ruthenium oxide Inorganic materials 0.000 description 1
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 description 1
- 229910002027 silica gel Inorganic materials 0.000 description 1
- 239000000741 silica gel Substances 0.000 description 1
- 238000003980 solgel method Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- IFLREYGFSNHWGE-UHFFFAOYSA-N tetracene Chemical compound C1=CC=CC2=CC3=CC4=CC=CC=C4C=C3C=C21 IFLREYGFSNHWGE-UHFFFAOYSA-N 0.000 description 1
- UGNWTBMOAKPKBL-UHFFFAOYSA-N tetrachloro-1,4-benzoquinone Chemical compound ClC1=C(Cl)C(=O)C(Cl)=C(Cl)C1=O UGNWTBMOAKPKBL-UHFFFAOYSA-N 0.000 description 1
- VZGDMQKNWNREIO-UHFFFAOYSA-N tetrachloromethane Chemical compound ClC(Cl)(Cl)Cl VZGDMQKNWNREIO-UHFFFAOYSA-N 0.000 description 1
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 1
- 125000001544 thienyl group Chemical group 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 229910000314 transition metal oxide Inorganic materials 0.000 description 1
- ODHXBMXNKOYIBV-UHFFFAOYSA-N triphenylamine Chemical compound C1=CC=CC=C1N(C=1C=CC=CC=1)C1=CC=CC=C1 ODHXBMXNKOYIBV-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 description 1
- 239000010457 zeolite Substances 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- OYQCBJZGELKKPM-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O-2].[Zn+2].[O-2].[In+3] OYQCBJZGELKKPM-UHFFFAOYSA-N 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
- GWDUZCIBPDVBJM-UHFFFAOYSA-L zinc;2-(2-hydroxyphenyl)-3h-1,3-benzothiazole-2-carboxylate Chemical compound [Zn+2].OC1=CC=CC=C1C1(C([O-])=O)SC2=CC=CC=C2N1.OC1=CC=CC=C1C1(C([O-])=O)SC2=CC=CC=C2N1 GWDUZCIBPDVBJM-UHFFFAOYSA-L 0.000 description 1
- QEPMORHSGFRDLW-UHFFFAOYSA-L zinc;2-(2-hydroxyphenyl)-3h-1,3-benzoxazole-2-carboxylate Chemical compound [Zn+2].OC1=CC=CC=C1C1(C([O-])=O)OC2=CC=CC=C2N1.OC1=CC=CC=C1C1(C([O-])=O)OC2=CC=CC=C2N1 QEPMORHSGFRDLW-UHFFFAOYSA-L 0.000 description 1
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Abstract
【解決手段】被成膜基板と、被成膜基板よりも小さい面積のシャドーマスクを用い、被成膜基板とシャドーマスクとの位置合わせを行い、被成膜基板の少なくとも一部に蒸着材料を成膜する工程を複数回行う。蒸着源としては、光吸収層と蒸着材料を有する支持基板を用いることが好ましい。
【選択図】図1
Description
本発明に係る成膜方法および発光装置の作製方法を、図1〜図4を用いて説明する。
本実施の形態では、蒸着材料が設けられた支持基板および成膜方法について、より詳細に説明する。
本実施の形態では、実施の形態1および実施の形態2で説明した成膜方法を用いてフルカラー表示装置を作製する方法について説明する。
本実施の形態では、本発明を適用して、発光素子および発光装置を作製する方法について説明する。
本実施の形態では、本発明を適用して作製した発光装置を用いて完成させた様々な電子機器について、図13を用いて説明する。
102 平板
103 被成膜基板保持手段
104 シャドーマスク
105 マスクフレーム
106 シャドーマスク保持手段
107 支持基板
108 蒸着材料
109 支持基板保持手段
121 成膜ユニット
122 カメラ
123 窓
124 ランプ
125 光源保持手段
134 レーザ
135 光学系
141 第1の成膜領域
142 第2の成膜領域
143 第3の成膜領域
200 第1の基板
201 光吸収層
202 材料層
205 シャドーマスク
206 第2の基板
207 第1の電極層
208 絶縁物
211 蒸着材料を含む層
300 基板
302 第1の電極層
304 発光層
306 第2の電極層
308 EL層
322 正孔注入層
324 正孔輸送層
326 電子輸送層
328 電子注入層
411 シャドーマスク
412 開口部
413 絶縁物
421 第1の膜(R)
422 第2の膜(G)
423 第3の膜(B)
431 シャドーマスク
432 開口部
441 第1の膜(R)
442 第2の膜(G)
443 第3の膜(B)
1001 筐体
1002 筐体
1101 表示部
1102 スピーカー
1103 マイクロフォン
1104 操作キー
1105 ポインティングデバイス
1106 カメラ用レンズ
1107 外部接続端子
1108 イヤホン端子
1201 キーボード
1202 外部メモリスロット
1203 カメラ用レンズ
1204 ライト
1501 基板
1504 絶縁層
1513 第1の電極層
1514 隔壁
1516 第2の電極層
1515B EL層
1515G EL層
1515R EL層
1521 発光領域
1522 隔壁
1601 基板
1602 データ線
1603 走査線
1604 隔壁
1605 領域
1606 入力端子
1607 入力端子
1608 接続配線
1609a FPC
1609b FPC
1700 EL層
1701 駆動回路部(ソース側駆動回路)
1702 画素部
1703 駆動回路部(ゲート側駆動回路)
1704 封止基板
1705 シール材
1707 空間
1708 配線
1709 FPC(フレキシブルプリントサーキット)
1710 素子基板
1711 スイッチング用TFT
1712 電流制御用TFT
1713 第1の電極層
1714 絶縁物
1715 発光素子
1716 第2の電極層
1723 nチャネル型TFT
1724 pチャネル型TFT
8001 筐体
8002 支持台
8003 表示部
8004 スピーカー部
8005 ビデオ入力端子
8101 本体
8102 筐体
8103 表示部
8104 キーボード
8105 外部接続ポート
8106 ポインティングデバイス
8201 本体
8202 表示部
8203 筐体
8204 外部接続ポート
8205 リモコン受信部
8206 受像部
8207 バッテリー
8208 音声入力部
8209 操作キー
8210 接眼部
8301 照明部
8302 傘
8303 可変アーム
8304 支柱
8305 台
8306 電源スイッチ
8401 本体
8402 筐体
8403 表示部
8404 音声入力部
8405 音声出力部
8406 操作キー
8407 外部接続ポート
8408 アンテナ
Claims (13)
- 被成膜基板を少なくとも2つの領域に分け、
前記被成膜基板より小さい面積のシャドーマスクを用い、
第1の領域に対してシャドーマスクの位置合わせを行い、前記第1の領域に蒸着材料を成膜し、
第2の領域に対してシャドーマスクの位置合わせを行い、前記第2の領域に蒸着材料を成膜する成膜方法。 - 被成膜基板と、前記被成膜基板より小さい面積のシャドーマスクを用い、
被成膜基板を2以上の領域に分け、1つの領域に対して前記シャドーマスクとの位置合わせを行い、前記1つの領域に蒸着材料を成膜し、未成膜領域にシャドーマスクを移動する工程を複数回行うことを特徴とする成膜方法。 - 被成膜基板と、前記被成膜基板より小さい面積のシャドーマスクと、平面状の蒸着源とを用い、
前記被成膜基板と前記シャドーマスクとの位置合わせを行い、平面状の蒸着源から蒸着材料を気化し、前記被成膜基板の少なくとも一部に前記蒸着材料を成膜する工程を複数回行うことを特徴とする成膜方法。 - 被成膜基板と、前記被成膜基板より小さい面積のシャドーマスクと、支持基板とを用い、
前記被成膜基板と前記シャドーマスクとの位置合わせを行い、
光源ユニットからの光を前記支持基板に照射し、照射光を前記支持基板に設けられた光吸収層に吸収させることにより、前記支持基板に設けられた蒸着材料を加熱し、前記蒸着材料の少なくとも一部を気化させ、前記シャドーマスクの開口部を介して、前記被成膜基板の表面の少なくとも一部に、前記蒸着材料を成膜し、
前記被成膜基板または前記シャドーマスクを移動する工程を複数回行うことを特徴とする成膜方法。 - 請求項4において、
前記シャドーマスクを移動させるときに、前記光源ユニットも移動させることを特徴とする成膜方法。 - 請求項4または請求項5において、
前記光源ユニットから射出された光は、赤外光であることを特徴する成膜方法。 - 請求項4乃至請求項6のいずれか一項において、
前記光吸収層は、前記光源ユニットから射出された光に対して、吸収率が40%以上であることを特徴とする成膜方法。 - 請求項4乃至請求項7のいずれか一項において、
前記光吸収層の膜厚は、200nm以上600nm以下であることを特徴とする成膜方法。 - 請求項4乃至請求項8のいずれか一項において、
前記光吸収層は、窒化タンタル、チタン、カーボンのいずれかを含むことを特徴とする成膜方法。 - 請求項4乃至請求項9のいずれか一項において、
湿式法を用いて、支持基板に蒸着材料を付着させることを特徴とする成膜方法。 - 請求項1乃至請求項10のいずれか一項において、
前記蒸着材料は有機化合物であることを特徴とする成膜方法。 - 第1の電極が形成された被成膜基板を用い、
請求項1乃至請求項11のいずれか一項に記載の成膜方法を用いて、前記第1の電極上に、蒸着材料を含む層を形成した後、第2の電極を形成することを特徴とする発光装置の作製方法。 - 請求項12において、
前記蒸着材料は、発光材料またはキャリア輸送材料であることを特徴とする発光装置の作製方法。
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CN101691652A (zh) | 2010-04-07 |
US20090104721A1 (en) | 2009-04-23 |
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