JP5238587B2 - 発光装置の作製方法 - Google Patents
発光装置の作製方法 Download PDFInfo
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- JP5238587B2 JP5238587B2 JP2009095766A JP2009095766A JP5238587B2 JP 5238587 B2 JP5238587 B2 JP 5238587B2 JP 2009095766 A JP2009095766 A JP 2009095766A JP 2009095766 A JP2009095766 A JP 2009095766A JP 5238587 B2 JP5238587 B2 JP 5238587B2
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- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 229950005499 carbon tetrachloride Drugs 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 229910000423 chromium oxide Inorganic materials 0.000 description 1
- 238000010549 co-Evaporation Methods 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- XCJYREBRNVKWGJ-UHFFFAOYSA-N copper(II) phthalocyanine Chemical compound [Cu+2].C12=CC=CC=C2C(N=C2[N-]C(C3=CC=CC=C32)=N2)=NC1=NC([C]1C=CC=CC1=1)=NC=1N=C1[C]3C=CC=CC3=C2[N-]1 XCJYREBRNVKWGJ-UHFFFAOYSA-N 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- BHQBDOOJEZXHPS-UHFFFAOYSA-N ctk3i0272 Chemical group C1=CC=CC=C1C(C(=C(C=1C=CC=CC=1)C(=C1C=2C=CC=CC=2)C=2C3=CC=CC=C3C(C=3C4=CC=CC=C4C(C=4C(=C(C=5C=CC=CC=5)C(C=5C=CC=CC=5)=C(C=5C=CC=CC=5)C=4C=4C=CC=CC=4)C=4C=CC=CC=4)=C4C=CC=CC4=3)=C3C=CC=CC3=2)C=2C=CC=CC=2)=C1C1=CC=CC=C1 BHQBDOOJEZXHPS-UHFFFAOYSA-N 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 239000000412 dendrimer Substances 0.000 description 1
- 229920000736 dendritic polymer Polymers 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000007607 die coating method Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- HNPSIPDUKPIQMN-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Al]O[Al]=O HNPSIPDUKPIQMN-UHFFFAOYSA-N 0.000 description 1
- 238000003618 dip coating Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 239000003759 ester based solvent Substances 0.000 description 1
- 239000004210 ether based solvent Substances 0.000 description 1
- OGPBJKLSAFTDLK-UHFFFAOYSA-N europium atom Chemical compound [Eu] OGPBJKLSAFTDLK-UHFFFAOYSA-N 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 229910052839 forsterite Inorganic materials 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000007756 gravure coating Methods 0.000 description 1
- 238000007646 gravure printing Methods 0.000 description 1
- RBTKNAXYKSUFRK-UHFFFAOYSA-N heliogen blue Chemical compound [Cu].[N-]1C2=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=NC([N-]1)=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=N2 RBTKNAXYKSUFRK-UHFFFAOYSA-N 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000005453 ketone based solvent Substances 0.000 description 1
- 239000003446 ligand Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 239000001989 lithium alloy Substances 0.000 description 1
- PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Chemical compound [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 description 1
- HCWCAKKEBCNQJP-UHFFFAOYSA-N magnesium orthosilicate Chemical compound [Mg+2].[Mg+2].[O-][Si]([O-])([O-])[O-] HCWCAKKEBCNQJP-UHFFFAOYSA-N 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- WOYDRSOIBHFMGB-UHFFFAOYSA-N n,9-diphenyl-n-(9-phenylcarbazol-3-yl)carbazol-3-amine Chemical compound C1=CC=CC=C1N(C=1C=C2C3=CC=CC=C3N(C=3C=CC=CC=3)C2=CC=1)C1=CC=C(N(C=2C=CC=CC=2)C=2C3=CC=CC=2)C3=C1 WOYDRSOIBHFMGB-UHFFFAOYSA-N 0.000 description 1
- AJNJGJDDJIBTBP-UHFFFAOYSA-N n-(9,10-diphenylanthracen-2-yl)-n,9-diphenylcarbazol-3-amine Chemical compound C1=CC=CC=C1N(C=1C=C2C(C=3C=CC=CC=3)=C3C=CC=CC3=C(C=3C=CC=CC=3)C2=CC=1)C1=CC=C(N(C=2C=CC=CC=2)C=2C3=CC=CC=2)C3=C1 AJNJGJDDJIBTBP-UHFFFAOYSA-N 0.000 description 1
- UMFJAHHVKNCGLG-UHFFFAOYSA-N n-Nitrosodimethylamine Chemical compound CN(C)N=O UMFJAHHVKNCGLG-UHFFFAOYSA-N 0.000 description 1
- VZYZZKOUCVXTOJ-UHFFFAOYSA-N n-[4-[4-(n-(9,9-dimethylfluoren-2-yl)anilino)phenyl]phenyl]-9,9-dimethyl-n-phenylfluoren-2-amine Chemical group C1=C2C(C)(C)C3=CC=CC=C3C2=CC=C1N(C=1C=CC(=CC=1)C=1C=CC(=CC=1)N(C=1C=CC=CC=1)C=1C=C2C(C)(C)C3=CC=CC=C3C2=CC=1)C1=CC=CC=C1 VZYZZKOUCVXTOJ-UHFFFAOYSA-N 0.000 description 1
- COVCYOMDZRYBNM-UHFFFAOYSA-N n-naphthalen-1-yl-9-phenyl-n-(9-phenylcarbazol-3-yl)carbazol-3-amine Chemical compound C1=CC=CC=C1N1C2=CC=C(N(C=3C=C4C5=CC=CC=C5N(C=5C=CC=CC=5)C4=CC=3)C=3C4=CC=CC=C4C=CC=3)C=C2C2=CC=CC=C21 COVCYOMDZRYBNM-UHFFFAOYSA-N 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910000484 niobium oxide Inorganic materials 0.000 description 1
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 description 1
- HCIIFBHDBOCSAF-UHFFFAOYSA-N octaethylporphyrin Chemical compound N1C(C=C2C(=C(CC)C(C=C3C(=C(CC)C(=C4)N3)CC)=N2)CC)=C(CC)C(CC)=C1C=C1C(CC)=C(CC)C4=N1 HCIIFBHDBOCSAF-UHFFFAOYSA-N 0.000 description 1
- 239000012788 optical film Substances 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- DYIZHKNUQPHNJY-UHFFFAOYSA-N oxorhenium Chemical compound [Re]=O DYIZHKNUQPHNJY-UHFFFAOYSA-N 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 238000010422 painting Methods 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- NFHFRUOZVGFOOS-UHFFFAOYSA-N palladium;triphenylphosphane Chemical compound [Pd].C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 NFHFRUOZVGFOOS-UHFFFAOYSA-N 0.000 description 1
- SLIUAWYAILUBJU-UHFFFAOYSA-N pentacene Chemical compound C1=CC=CC2=CC3=CC4=CC5=CC=CC=C5C=C4C=C3C=C21 SLIUAWYAILUBJU-UHFFFAOYSA-N 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
- 125000002080 perylenyl group Chemical group C1(=CC=C2C=CC=C3C4=CC=CC5=CC=CC(C1=C23)=C45)* 0.000 description 1
- CSHWQDPOILHKBI-UHFFFAOYSA-N peryrene Natural products C1=CC(C2=CC=CC=3C2=C2C=CC=3)=C3C2=CC=CC3=C1 CSHWQDPOILHKBI-UHFFFAOYSA-N 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- HRGDZIGMBDGFTC-UHFFFAOYSA-N platinum(2+) Chemical compound [Pt+2] HRGDZIGMBDGFTC-UHFFFAOYSA-N 0.000 description 1
- 229920000172 poly(styrenesulfonic acid) Polymers 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- VLRICFVOGGIMKK-UHFFFAOYSA-N pyrazol-1-yloxyboronic acid Chemical compound OB(O)ON1C=CC=N1 VLRICFVOGGIMKK-UHFFFAOYSA-N 0.000 description 1
- 238000010791 quenching Methods 0.000 description 1
- 230000000171 quenching effect Effects 0.000 description 1
- 125000002943 quinolinyl group Chemical group N1=C(C=CC2=CC=CC=C12)* 0.000 description 1
- 239000003507 refrigerant Substances 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910003449 rhenium oxide Inorganic materials 0.000 description 1
- 239000010979 ruby Substances 0.000 description 1
- 229910001750 ruby Inorganic materials 0.000 description 1
- 229910001925 ruthenium oxide Inorganic materials 0.000 description 1
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 229910002027 silica gel Inorganic materials 0.000 description 1
- 239000000741 silica gel Substances 0.000 description 1
- 238000003980 solgel method Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- IFLREYGFSNHWGE-UHFFFAOYSA-N tetracene Chemical compound C1=CC=CC2=CC3=CC4=CC=CC=C4C=C3C=C21 IFLREYGFSNHWGE-UHFFFAOYSA-N 0.000 description 1
- UGNWTBMOAKPKBL-UHFFFAOYSA-N tetrachloro-1,4-benzoquinone Chemical compound ClC1=C(Cl)C(=O)C(Cl)=C(Cl)C1=O UGNWTBMOAKPKBL-UHFFFAOYSA-N 0.000 description 1
- VZGDMQKNWNREIO-UHFFFAOYSA-N tetrachloromethane Chemical compound ClC(Cl)(Cl)Cl VZGDMQKNWNREIO-UHFFFAOYSA-N 0.000 description 1
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 1
- 125000001544 thienyl group Chemical group 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 229910000314 transition metal oxide Inorganic materials 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- ODHXBMXNKOYIBV-UHFFFAOYSA-N triphenylamine Chemical compound C1=CC=CC=C1N(C=1C=CC=CC=1)C1=CC=CC=C1 ODHXBMXNKOYIBV-UHFFFAOYSA-N 0.000 description 1
- 238000005019 vapor deposition process Methods 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 description 1
- 239000010457 zeolite Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- OYQCBJZGELKKPM-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O-2].[Zn+2].[O-2].[In+3] OYQCBJZGELKKPM-UHFFFAOYSA-N 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
- GWDUZCIBPDVBJM-UHFFFAOYSA-L zinc;2-(2-hydroxyphenyl)-3h-1,3-benzothiazole-2-carboxylate Chemical compound [Zn+2].OC1=CC=CC=C1C1(C([O-])=O)SC2=CC=CC=C2N1.OC1=CC=CC=C1C1(C([O-])=O)SC2=CC=CC=C2N1 GWDUZCIBPDVBJM-UHFFFAOYSA-L 0.000 description 1
- QEPMORHSGFRDLW-UHFFFAOYSA-L zinc;2-(2-hydroxyphenyl)-3h-1,3-benzoxazole-2-carboxylate Chemical compound [Zn+2].OC1=CC=CC=C1C1(C([O-])=O)OC2=CC=CC=C2N1.OC1=CC=CC=C1C1(C([O-])=O)OC2=CC=CC=C2N1 QEPMORHSGFRDLW-UHFFFAOYSA-L 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/048—Coating on selected surface areas, e.g. using masks using irradiation by energy or particles
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/18—Deposition of organic active material using non-liquid printing techniques, e.g. thermal transfer printing from a donor sheet
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/17—Passive-matrix OLED displays
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/30—Devices specially adapted for multicolour light emission
- H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/40—Thermal treatment, e.g. annealing in the presence of a solvent vapour
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Electroluminescent Light Sources (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Description
本実施の形態1では、蒸着用基板を用いた成膜方法について説明する。なお、本実施の形態1では、蒸着用基板上に蒸着材料をパターン形成し、これを用いて発光素子のEL層を形成する場合について説明する。
本実施の形態2では、実施の形態1で示した蒸着用基板を用いた成膜方法において、蒸着用基板に第1の光の光源としてレーザ光を照射する場合に用いる装置について説明する。
本実施の形態3では、実施の形態1で示した蒸着用基板を用いた成膜方法において、パターン形成された材料層を有する蒸着用基板に第2の光の光源としてランプ光を照射する場合に用いる装置について説明する。
本実施の形態4では、実施の形態1で示した蒸着用基板を複数用いて、発光素子のEL層を形成することにより、フルカラー表示が可能な発光装置の作製方法について説明する。
本実施の形態では、本発明の一態様を適用して、発光素子および発光装置を作製する方法について説明する。
本実施の形態6では、実施の形態5で説明した発光素子を用いて形成される発光装置について説明する。
本実施の形態では、本発明の一態様を適用して作製した発光装置を用いて完成させた様々な電子機器について、図12を用いて説明する。
102 開口部
103 反射層
104 光吸収層
105、105a、105b 材料層
106 第2の基板
107 第1の光
201 第3の基板
202 第1の電極
204 第2の光
205、206、207、208 EL層
400 第2の基板
401 第1の基板
403 レーザ発振装置
404 第1の光学系
405 第2の光学系
406 第3の光学系
407 反射ミラー
408 位置アライメント機構
409 第1の基板ステージ
410 反射層
411 光吸収層
412 材料層
413 開口部
416 制御装置
501 成膜室
502 ゲート弁
503 排気機構
504 基板ステージ
505 基板支持機構
506 制御装置
507 撮像素子(位置アライメント機構)
510 光源
511 第1の基板
512 第3の基板
513 材料層
601 反射層(R)
602 開口部
603 反射層(G)
604 反射層(B)
611 EL層(R)
612 EL層(G)
613 EL層(B)
614 絶縁物
701 反射層
702 開口部
711 EL層(R)
712 EL層(G)
713 EL層(B)
801 第1の基板
802 第1の電極
803 EL層
804 第2の電極
811 正孔注入層
812 正孔輸送層
813 発光層
814 電子輸送層
815 電子注入層
901 基板
904 絶縁層
913 第1の電極
914 隔壁
915R EL層(赤)
915G EL層(緑)
915B EL層(青)
916 第2の電極
921 発光領域
922 隔壁
1002 データ線
1003 走査線
1004 隔壁
1005 領域
1006 入力端子
1007 入力端子
1008 接続配線
1100 EL層
1101 駆動回路部(ソース側駆動回路)
1102 画素部
1103 駆動回路部(ゲート側駆動回路)
1104 封止基板
1105 シール材
1107 空間
1108 配線
1109 FPC(フレキシブルプリントサーキット)
1110 素子基板
1111 スイッチング用TFT
1112 電流制御用TFT
1113 第1の電極
1114 絶縁物
1115 発光素子
1116 第2の電極
1123 nチャネル型TFT
1124 pチャネル型TFT
1301 本体
1302 筐体
1303 筐体
1304 表示部
1305 スピーカー
1306 マイクロフォン
1307 操作キー
1308 ポインティングデバイス
1309 カメラ用レンズ
1310 外部接続端子
1311 イヤホン端子
1312 キーボード
1313 外部メモリスロット
1314 カメラ用レンズ
1315 ライト
1401 領域a
1402 領域b
8001 筐体
8002 支持台
8003 表示部
8004 スピーカー部
8005 ビデオ入力端子
8101 本体
8102 筐体
8103 表示部
8104 キーボード
8105 外部接続ポート
8106 ポインティングデバイス
8201 本体
8202 表示部
8203 筐体
8204 外部接続ポート
8205 リモコン受信部
8206 受像部
8207 バッテリー
8208 音声入力部
8209 操作キー
8210 接眼部
8301 照明部
8302 傘
8303 可変アーム
8304 支柱
8305 台
8306 電源
8401 本体
8402 筐体
8403 表示部
8404 音声入力部
8405 音声出力部
8406 操作キー
8407 外部接続ポート
8408 アンテナ
Claims (3)
- 第1の基板の上方に第1の層を有し、
前記第1の基板の上方と前記第1の層の上方とに第2の層を有し、
前記第2の層の上方に第3の層を有し、
前記第1の基板は、第1の領域と第2の領域とを有し、
前記第1の層は、前記第1の領域と重ならず、
前記第1の層は、前記第2の領域と重なる第3の領域を有し、
前記第2の層は、前記第1の領域と重なる第4の領域を有し、
前記第2の層は、前記第2の領域と重なる第5の領域を有し、
前記第3の層は、前記第1の領域と重なる第6の領域を有し、
前記第3の層は、前記第2の領域と重なる第7の領域を有する構造体が用意される第1の工程と、
前記第1の基板の下方から第1の光が照射され、前記第3の層の前記第6の領域が蒸発又は昇華され、前記第3の層の前記第7の領域は残存する第2の工程と、
前記第1の基板と第2の基板とが対向するように配置され、前記第1の基板の下方から第2の光が照射され、前記第2の層の前記第4の領域が加熱され、前記第2の層の前記第4の領域から前記第2の層の前記第5の領域に熱が伝導され、前記第3の層の前記第7の領域が蒸発又は昇華され、前記第2の基板の有する被成膜面に第4の層が形成される第3の工程と、を有し、
前記第2の工程において、前記第3の層の前記第6の領域が蒸発又は昇華されることにより、第3の基板の有する被成膜面に第7の層が形成され、
前記第7の層が回収されて再利用され、
前記第3の領域の全体が前記第2の領域と重なり、
前記第4の領域の全体が前記第1の領域と重なり、
前記第1の層は、前記第1の光を反射することができる機能を有し、
前記第2の層は、前記第1の光を吸収することができる機能を有し、
前記第2の層は、前記第2の光を吸収することができる機能を有し、
前記第4の層は、発光素子の一部として機能することができることを特徴とする発光装置の作製方法。 - 第1の基板の上方に第1の層を有し、
前記第1の基板の上方と前記第1の層の上方とに第2の層を有し、
前記第2の層の上方に第3の層を有し、
前記第1の基板は、第1の領域と第2の領域とを有し、
前記第1の層は、前記第1の領域と重ならず、
前記第1の層は、前記第2の領域と重なる第3の領域を有し、
前記第2の層は、前記第1の領域と重なる第4の領域を有し、
前記第2の層は、前記第2の領域と重なる第5の領域を有し、
前記第3の層は、前記第1の領域と重なる第6の領域を有し、
前記第3の層は、前記第2の領域と重なる第7の領域を有する構造体が用意される第1の工程と、
前記第1の基板の下方から第1の光が照射され、前記第3の層の前記第6の領域が蒸発又は昇華され、前記第3の層の前記第7の領域は残存する第2の工程と、
前記第1の基板と第2の基板とが対向するように配置され、前記第1の基板の下方から第2の光が照射され、前記第2の層の前記第4の領域が加熱され、前記第2の層の前記第4の領域から前記第2の層の前記第5の領域に熱が伝導され、前記第3の層の前記第7の領域が蒸発又は昇華され、前記第2の基板の有する被成膜面に第4の層が形成される第3の工程と、を有し、
前記第2の工程において、前記第3の層の前記第6の領域が蒸発又は昇華されることにより、第3の基板の有する被成膜面に第7の層が形成され、
前記第7の層が回収されて再利用され、
前記第3の領域の全体が前記第2の領域と重なり、
前記第4の領域の全体が前記第1の領域と重なり、
前記第1の層は、アルミニウム、銀、金、白金、又は銅のいずれかを有し、
前記第2の層は、モリブデン、チタン、タングステン、又はカーボンのいずれかを有し、
前記第4の層は、発光素子の一部として機能することができることを特徴とする発光装置の作製方法。 - 請求項1又は請求項2において、
前記第3の層は、第5の層を有し、
前記第3の層は、前記第5の層の上方に第6の層を有し、
前記第5の層は、第1の物質を有し、
前記第6の層は、第2の物質を有し、
前記第4の層は、前記第1の物質と前記第2の物質とを有し、
前記第1の物質は、第1の温度で蒸発又は昇華することができ、
前記第2の物質は、第2の温度で蒸発又は昇華することができ、
前記第1の温度は、前記第2の温度よりも低いことを特徴とする発光装置の作製方法。
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US20100194265A1 (en) * | 2007-07-09 | 2010-08-05 | Katholieke Universiteit Leuven | Light-emitting materials for electroluminescent devices |
KR20090028413A (ko) * | 2007-09-13 | 2009-03-18 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 발광장치 제작방법 및 증착용 기판 |
KR20090041314A (ko) * | 2007-10-23 | 2009-04-28 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 증착용 기판 및 발광장치의 제조방법 |
US8153201B2 (en) | 2007-10-23 | 2012-04-10 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing light-emitting device, and evaporation donor substrate |
JP5416987B2 (ja) * | 2008-02-29 | 2014-02-12 | 株式会社半導体エネルギー研究所 | 成膜方法及び発光装置の作製方法 |
JP5159689B2 (ja) * | 2008-04-25 | 2013-03-06 | 株式会社半導体エネルギー研究所 | 発光装置の作製方法 |
KR101065402B1 (ko) * | 2009-08-13 | 2011-09-16 | 삼성모바일디스플레이주식회사 | 유기 발광 표시 장치 |
JP5361690B2 (ja) * | 2009-12-11 | 2013-12-04 | 株式会社半導体エネルギー研究所 | 成膜用基板 |
JP5913974B2 (ja) * | 2011-12-28 | 2016-05-11 | 株式会社アルバック | 有機elデバイスの製造装置、及び有機elデバイスの製造方法 |
KR20150056112A (ko) * | 2013-11-14 | 2015-05-26 | 삼성디스플레이 주식회사 | 막 형성용 마스크, 이를 이용한 막 형성 방법 및 유기 발광 표시 장치의 제조 방법 |
KR101561200B1 (ko) | 2014-05-19 | 2015-10-19 | 주식회사 선익시스템 | 전사를 이용한 기판의 제조방법 및 이에 의해 제조된 기판 |
KR102181239B1 (ko) | 2014-09-03 | 2020-11-23 | 삼성디스플레이 주식회사 | 박막 형성 장치 및 그를 이용한 박막 형성 방법 |
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KR20090041314A (ko) * | 2007-10-23 | 2009-04-28 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 증착용 기판 및 발광장치의 제조방법 |
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