CN105483619B - 移动靶镀膜装置及镀膜方法 - Google Patents

移动靶镀膜装置及镀膜方法 Download PDF

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CN105483619B
CN105483619B CN201610053369.8A CN201610053369A CN105483619B CN 105483619 B CN105483619 B CN 105483619B CN 201610053369 A CN201610053369 A CN 201610053369A CN 105483619 B CN105483619 B CN 105483619B
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target source
temperature
target
infrared
coating apparatus
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CN105483619A (zh
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钱国平
井杨坤
吴成业
王备
季雨
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BOE Technology Group Co Ltd
Hefei Xinsheng Optoelectronics Technology Co Ltd
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BOE Technology Group Co Ltd
Hefei Xinsheng Optoelectronics Technology Co Ltd
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Priority to CN201610053369.8A priority Critical patent/CN105483619B/zh
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Priority to RU2017133532A priority patent/RU2727235C2/ru
Priority to PCT/CN2017/000038 priority patent/WO2017128928A1/zh
Priority to EP17743543.5A priority patent/EP3412794B1/en
Priority to JP2017544609A priority patent/JP2019502813A/ja
Priority to US15/552,184 priority patent/US20180044785A1/en
Priority to BR112017020578-5A priority patent/BR112017020578A2/zh
Priority to KR1020177025829A priority patent/KR20170117184A/ko
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Abstract

移动靶镀膜装置,包括靶源、靶源承载部、用于检测靶源表面温度的红外温度探测部、用于加热靶源的红外加热部、控制部;靶源承载部承载靶源并可驱动靶源在三维方向自由移动;红外温度探测部和红外加热部与控制部信号连接,控制部接收红外温度探测部的探测信号,判断靶源表面温度是否均匀,当控制部判断靶源表面某部分温度低于其他部分的温度且温度差值超过设定值时,则控制红外加热部加热温度较低的部分靶源表面,至靶源表面温度均匀时停止加热。

Description

移动靶镀膜装置及镀膜方法
技术领域
本公开涉及移动靶镀膜装置及镀膜方法,尤其涉及具备红外温度探测部、红外加热部的移动靶镀膜装置及镀膜方法。
背景技术
利用有机材料的光电器件近年来获得了越来越多的重视。主要原因在于,制造这种器件所使用的许多材料相对便宜,因此与采用无机材料的光电器件相比,有机光电器件潜在地具有成本优势。另外,有机材料的固有性能,例如其柔性,可使得它们非常适合于特定的应用,例如基于柔性基底的发光器件。有机光电器件的实例包括有机发光器件(OLED)、有机光敏晶体管、有机光生伏打电池和有机光检测器。例如,对于OLED来说,有机材料相对于非有机材料具有性能和制备工艺方面的优势。例如,通常可容易地采用合适的掺杂剂微调有机发射层发光时的波长。
有机光电器件,例如薄膜晶体管(TFT)、发光二极管(LED)和光生伏打(PV)电池在过去十年来赢得了研究者相当大的关注。有机半导体可沉积在各种基底上,当与无机半导体相比时,这将潜在地简化并降低制造成本。虽然具备上述优势,但有机半导体独特的加工要求也可能会限制其应用。例如,发光器件和光生伏打(PV)电池典型地由夹在导电电极之间的共轭聚合物或单体的薄膜组成。对于全色显示器和多晶体管电路来说,活性有机层本身还必须被横向构图。然而,典型的有机层太脆,以致于无法耐受常规的半导体加工方法,例如光刻法、等离子体加工或反应性离子蚀刻等。因此研究人员开发了许多制造和构图技术来适应有机材料这些独特的性质,这些技术主要强调加工的容易程度和低成本。
发明内容
本发明的实施例提供一种移动靶镀膜装置,包括靶源、靶源承载部、用于检测所述靶源表面温度的红外温度探测部、用于加热所述靶源的红外加热部、控制部;其中,所述靶源承载部承载所述靶源并可驱动所述靶源在三维方向自由移动;所述红外温度探测部和所述红外加热部与所述控制部信号连接,所述控制部接收所述红外温度探测部的探测信号,判断所述靶源表面温度是否均匀,当所述控制部判断所述靶源表面某部分温度低于其他部分的温度且温度差值超过设定值时,则控制所述红外加热部加热所述温度较低的部分靶源表面,至所述靶源表面温度均匀时停止加热。
在本发明的实施例提供的移动靶镀膜装置中,例如,所述红外温度探测部和所述红外加热部与所述靶源承载部连接,且随其同步移动。
在本发明的实施例提供的移动靶镀膜装置中,例如,所述靶源表面与所述红外加热部表面平行;所述靶源表面在所述红外加热部表面所在的平面上的投影在所述红外加热部表面的范围内,或者所述红外加热部表面在所述靶源表面所在的平面上的投影在所述靶源表面的范围内。
在本发明的实施例提供的移动靶镀膜装置中,例如,所述红外温度探测部设置在所述靶源表面与所述红外加热部表面之间。
在本发明的实施例提供的移动靶镀膜装置中,例如,所述靶源面积小于或等于所述红外加热部面积。
在本发明的实施例提供的移动靶镀膜装置中,例如,所述红外加热部由多个红外加热辐射片组成,当所述控制部判断所述靶源表面某部分温度低于其他部分的温度且温度差值超过设定值时,所述控制部启动与所述温度较低的部分靶源表面相对的红外加热辐射片,加热所述温度较低的部分靶源表面,至所述靶源表面温度均匀时停止加热。
在本发明的实施例提供的移动靶镀膜装置中,例如,在所述每个红外加热辐射片上设置有辐射汇聚结构。
在本发明的实施例提供的移动靶镀膜装置中,例如,所述红外加热部包括一个红外加热辐射片,当所述控制部判断所述靶源表面某部分温度低于其他部分的温度、且温度差值超过设定值时,所述控制部控制所述红外加热辐射片转向并加热所述温度较低的部分靶源表面,至所述靶源表面温度均匀时停止加热。
在本发明的实施例提供的移动靶镀膜装置中,例如,其中所述靶源表面为一整体。或者,所述靶源表面由多个分立的子靶源组成。
在本发明的实施例提供的移动靶镀膜装置中,例如,所述多个分立的子靶源排布为环形。
在本发明的实施例提供的移动靶镀膜装置中,例如,所述靶源承载部包括导轨和靶源支撑件,当所述靶源需要移动时,所述靶源支撑件在所述导轨上移动。
在本发明的实施例提供的移动靶镀膜装置中,例如,所述导轨为磁悬浮轨道,且所述磁悬浮轨道和所述靶源支撑件之间产生电磁排斥力,将所述靶源支撑件托起到悬浮状态。
在本发明的实施例提供的移动靶镀膜装置中,例如,所述导轨为气垫轨道,所述气垫轨道上设置有朝向所述靶源支撑件的多个气孔,所述气垫轨道上的多个气孔喷出高速气体,将所述靶源支撑件托起到悬浮状态。
在本发明的实施例提供的移动靶镀膜装置中,例如,所述靶源平行于地面设置,所述红外加热部设置在所述靶源上方。
在本发明的实施例提供的移动靶镀膜装置中,例如,所述红外加热部平行于地面设置,所述靶源设置在所述红外加热部上方。
在本发明的实施例提供的移动靶镀膜装置中,例如,所述靶源和所述红外加热部均垂直于地面设置。
在本发明的实施例提供的移动靶镀膜装置中,例如,所述红外温度探测部包括红外摄像管。
本发明的实施例还提供一种采用移动靶镀膜装置镀膜的方法,所述移动靶镀膜装置包括:靶源、靶源承载部、用于检测靶源表面温度的红外温度探测部、用于加热靶源的红外加热部、控制部,其中,所述靶源承载部承载所述靶源并可驱动所述靶源在三维方向自由移动,所述红外温度探测部和所述红外加热部与所述控制部信号连接,所述方法包括:所述控制部接收所述红外温度探测部的探测信号,判断所述靶源表面温度是否均匀;当所述控制部判断所述靶源表面某部分温度低于其他部分的温度且温度差值超过设定值时,则控制所述红外加热部加热所述温度较低的部分靶源表面,至所述靶源表面温度均匀时停止加热。
附图说明
为了更清楚地说明本发明实施例的技术方案,下面将对实施例的附图作简单地介绍,显而易见地,下面描述中的附图仅仅涉及本发明的一些实施例,而非对本发明的限制。
图1为本发明一实施例提供的移动靶镀膜装置结构示意图;
图2为本发明又一实施例提供的移动靶镀膜装置结构示意图;
图3为本发明一实施例提供的移动靶镀膜装置中靶源和红外加热部的俯视图;
图4为本发明又一实施例提供的移动靶镀膜装置中靶源和红外加热部的俯视图;
图5为本发明一实施例提供的移动靶镀膜装置中的红外加热辐射片、旋转电机结构示意图。
具体实施方式
为使本发明实施例的目的、技术方案和优点更加清楚,下面将结合本发明实施例的附图,对本发明实施例的技术方案进行清楚、完整地描述。显然,所描述的实施例是本发明的一部分实施例,而不是全部的实施例。基于所描述的本发明的实施例,本领域普通技术人员在无需创造性劳动的前提下所获得的所有其他实施例,都属于本发明保护的范围。
除非另作定义,本公开所使用的技术术语或者科学术语应当为本发明所属领域内具有一般技能的人士所理解的通常意义。本发明专利申请说明书以及权利要求书中使用的“第一”“第二”以及类似的词语并不表示任何顺序、数量或者重要性,而只是用来区分不同的组成部分。同样,“一个”或者“一”等类似词语也不表示数量限制,而是表示存在至少一个。“连接”或者“相连”等类似的词语并非限定于物理的或者机械的连接,而是可以包括电性的连接,不管是直接的还是间接的。
在有机发光器件的制备中,利用移动靶进行镀膜是一种可以提高靶材使用率的方法。但已有的方法中,膜结晶温度的变化导致成膜的均一性变差。本发明的实施例结合使用红外加热部和红外温度探测部,可确保移动靶源表面温度稳定,整个镀膜过程中没有温度异常,保证了镀膜的均一性。
本公开的实施例提供了一种移动靶镀膜装置,其包括靶源、靶源承载部、用于检测靶源表面温度的红外温度探测部、用于加热靶源的红外加热部、控制部。靶源承载部承载靶源并可驱动靶源在三维方向自由移动;红外温度探测部和红外加热部与控制部信号连接,控制部接收红外温度探测部的探测信号,判断靶源表面温度是否均匀,当控制部判断靶源表面某部分温度低于其他部分的温度且温度差值超过设定值时,则控制红外加热部加热温度较低的部分靶源表面,至靶源表面温度均匀时停止加热。
图1为本发明一实施例提供的移动靶镀膜装置示意图。如图所示,该移动靶镀膜装置包括靶源1、靶源承载部2、用于检测靶源表面温度的红外温度探测部3、用于加热靶源的红外加热部4和控制部10,其中控制部10可以包括信号连接部5、信号处理部6;在一个示例中,该控制部10还可以包括执行部7。
靶源承载部2在其承载面上承载靶源1,并可驱动靶源1例如在移动靶镀膜装置内部空间内的三维方向上自由移动。在图中所示的实施例中,待镀膜的基板8设置在靶源1与红外加热部4之间,且与靶源1平行设置。基板8的面积一般大于等于靶源1的面积。在其他示例中,例如图2所示,红外加热部4设置在待镀膜的基板8与靶源1之间,只要不遮挡从靶源1溅射出来的物质沉积到待镀膜的基板8之上即可。
该移动靶镀膜装置在镀膜时,可以采用两种方式。在第一种方式中,靶源1固定于某一处对对应位置处的基板8进行镀膜,当该对应位置处的基板8的膜厚达到设定厚度时,靶源承载部2驱动靶源1移动至另一处继续重复上述过程。在第二种方式中,靶源承载部2驱动靶源1不断移动,对基板8不同位置进行扫描式的镀膜。驱动靶源承载部2的动力例如可来自步进电机,并且驱动机构还可以包括导轨、螺杆、齿轮等部件。
靶源承载部2可以采用低阻轨道。例如,如图1所示,靶源承载部2包括磁悬浮轨道22和靶源支撑件21。当靶源1需要移动时,磁悬浮轨道22和靶源支撑件21之间将产生电磁排斥力,将靶源支撑件21托起到悬浮状态。在此状态下,可以驱动靶源支撑件21在X轴和/或Y轴方向运动。靶源支撑件21设置为可升降,例如通过螺杆方式,或者通过齿轮齿条的方式等。
图2为本发明另一实施例提供的移动靶镀膜装置示意图。与图1所示的实施例相比,在图2所示的实施例中,靶源承载部2包括气垫轨道24和靶源支撑件23,气垫轨道24上设置有朝向靶源支撑件23的多个气孔25,当靶源1需要移动时,气垫轨道24上的多个气孔25将喷出高速气体,将靶源支撑件23托起到悬浮状态。在此状态下,可以驱动靶源支撑件23在X轴和/或Y轴方向运动。靶源支撑件23设置为可升降,例如通过螺杆方式,或者通过齿轮齿条的方式等。
靶源承载部2的运行速度和加速度是影响靶源承载部2运行效率的参数;更快的运行速度和更大的加速度可以有效地降低单次移动的时间。由于靶源支撑件21/23和上述磁悬浮轨道或者气垫轨道22/24分离,有效提高了运行速度。同时由于在图1和图2的实施例中,对靶源承载部2运动时的摩擦力较小,靶源承载部2的速度更加容易快速提升。与此相对,已有的普通靶源承载系统轨道阻力大,当搬运靶源的任务较繁重的时候,靶源承载系统本身会遇到经常性的停车,这时过快的速度和过大的加速度会加快部件的磨损。但本发明实施例采用的磁悬浮轨道系统或气垫轨道系统克服了这种问题。磁悬浮轨道系统或气垫轨道系统,由于轨道与靶源支撑件分离,消除了机械摩擦、降低了噪音、减少了设备的机械磨损。
例如,红外温度探测部3和红外加热部4可以与靶源承载部2连接,此种情况下,当靶源承载部2移动时,红外温度探测部3和红外加热部4随其同步移动。这样设置可以保证红外温度探测部3能够准确探测靶源1表面的温度,以及保证红外加热部4准确地对靶源1表面特定位置加热。当然,红外温度探测部3和红外加热部4也可以与靶源承载部2分离设置,此种情况下,当靶源承载部2移动时,红外温度探测部3和红外加热部4与其同步移动,或者调整相应的检测角度以及加热角度等。
信号连接部5连接(耦接)红外温度探测部3和信号处理部6。信号连接部5还连接(耦接)信号处理部6和执行部7。信号连接部5例如可以传递电信号或者光信号,例如为导线或光纤等。信号连接部5将红外温度探测部3探测到的靶源1表面的温度信息传送给信号处理部6,信号处理部6处理完该温度信息后,信号连接部5再将信号处理部6的指令信息发送给执行部7,执行部7可以控制/驱动红外加热部4。
信号处理部6根据接收的来自于红外温度探测部3的检测结果,判断靶源1表面温度是否均匀。当信号处理部6判断靶源1表面某部分温度低于其他部分的温度且温度差值超过设定值时,信号处理部6向执行部7发出指令,执行部7控制红外加热部4加热温度较低的部分靶源表面,直至靶源1表面温度均匀时停止加热。上述温度差的设定值可根据实际需要的精度来设置,例如设定为5℃、1℃、0.5℃、0.1℃等。靶源表面温度均匀的判断标准也可根据实际需要来设定。例如可以设定靶源表面各部分之间的温度差小于5℃、1℃、0.5℃或0.1℃时,认为靶源表面温度均匀。
例如,靶源1具有一基本平坦的靶源表面,红外加热部4也可具有一基本平坦的红外加热部表面,此时可使得靶源表面与红外加热部表面平行;靶源表面在红外加热部表面所在的平面上的投影在红外加热部表面的范围内,或者红外加热部表面在靶源表面所在的平面上的投影在靶源表面的范围内;红外温度探测部3设置在靶源1表面与红外加热部4表面之间。
例如,靶源1面积小于或等于红外加热部4面积。如图3、4所示是靶源1和红外加热部4的俯视图。如图3所示,靶源1和红外加热部4面积相等,并且正对着设置。因此,俯视图中靶源1和红外加热部4重合。如图4所示,靶源1面积小于红外加热部4面积,并且正对着设置。因此,俯视图中靶源1在红外加热部4的范围内。
例如,红外加热部4由多个红外加热辐射片组成。如图3、4所示,红外加热部4由A1-E5共25个红外加热辐射片组成,本发明不限于如图所示的红外加热辐射片的形状和排布。当信号处理部6判断靶源1表面某部分温度低于其他部分的温度且温度差值超过设定值时,信号处理部6向执行部7发出指令,执行部7启动与温度较低的部分靶源表面相对的红外加热辐射片,加热温度较低的部分靶源1表面,至靶源1表面温度均匀时停止加热。例如,信号处理部6探测到靶源1左上角的温度低于其他部分的温度且温度差值超过了设定值,如图3所示,则向执行部7发出指令,执行部7启动与靶源1左上角相对的红外加热辐射片,也即红外加热辐射片A1,加热温度较低的靶源左上角,直至靶源表面温度均匀时停止加热。在一个示例中,红外加热部4的各个红外加热辐射片的表面还可以设置辐射汇聚结构(例如透镜或反射部),从而可以更好地针对靶源1的局部进行加热。
例如,如图5所示,红外加热部4也可以包括一个红外加热辐射片41,执行部7包括一个旋转电机71,红外加热辐射片41与旋转电机71相连,信号处理部6构造为判断靶源表面温度是否均匀,当信号处理部6判断靶源表面某部分P温度低于其他部分的温度且温度差值超过设定值时,信号处理部6向执行部7发出指令,旋转电机71控制与其相连的红外加热辐射片41转向并加热温度较低的部分靶源表面P,至靶源表面温度均匀时停止加热。
在上述实施例中,还可以设置一个例如风扇等以配合红外加热部4工作,以促进温度的均一性。
例如,靶源1表面可以为一整体。或者,靶源1表面也可以由多个分立的子靶源组成;又例如,这些子靶源排布在环形驱动带上,从而可以轮流使用这些子靶源,更进一步保证沉积的均匀性。
例如,如图1、2所示,靶源1可以平行于地面设置,红外加热部4可以设置在靶源1上方。或者,红外加热部4可以平行于地面设置,靶源1可以设置在红外加热部4上方。又或者,靶源1和红外加热部4均垂直于地面设置。
例如,红外温度探测部3包括红外摄像管等。
例如,信号处理部6包括中央处理单元(CPU)、图像处理单元(GPU)、数字信号处理器(DSP)、可编程逻辑控制器等,如果需要还可以包括存储器、输入/输出设备(例如显示器、触摸屏、触摸板、键盘、鼠标等)等。
例如,执行部7包括继电器、驱动电极等。
本发明上述实施例的移动靶镀膜装置可以适用于各种镀膜方式,包括但不限于磁控溅射法、真空蒸镀法等。该移动靶镀膜装置也适用于各种材料薄膜的制备,例如阳极膜包括但不限于氧化铟锡膜(ITO)、氧化锌锡膜(IZO)等。在本发明上述实施例提供的移动靶镀膜装置中,红外温度探测部3实时检测靶源1表面的温度,红外加热部4根据探测到的温度分布信息,及时加热靶源1表面温度较低的部分,保证了镀膜过程中靶源1表面温度均一,能够得到整版电阻分布均匀的阳极膜。在本发明的一个实施例中,阳极膜的电阻率达到2×10-4Ω/cm、透过率达到90%以上;工作效率、阳极膜的产品质量都大大提高;节约生产成本,使用寿命延长2倍以上,并且节能环保。
以上仅是本发明的示范性实施方式,而非用于限制本发明的保护范围,本发明的保护范围由所附的权利要求确定。

Claims (19)

1.一种移动靶镀膜装置,包括靶源、靶源承载部、用于检测所述靶源表面温度的红外温度探测部、用于加热所述靶源的红外加热部、控制部;
其特征在于,所述靶源承载部承载所述靶源并可驱动所述靶源在三维方向自由移动;
所述红外温度探测部和所述红外加热部与所述控制部信号连接,所述控制部接收所述红外温度探测部的探测信号,判断所述靶源表面温度是否均匀,
当所述控制部判断所述靶源表面某部分温度低于其他部分的温度且温度差值超过设定值时,则控制所述红外加热部加热所述温度较低的部分靶源表面,至所述靶源表面温度均匀时停止加热。
2.根据权利要求1所述的移动靶镀膜装置,其中,所述红外温度探测部和所述红外加热部与所述靶源承载部连接,且随其同步移动。
3.根据权利要求1所述的移动靶镀膜装置,其中,所述靶源表面与所述红外加热部表面平行;
所述靶源表面在所述红外加热部表面所在的平面上的投影在所述红外加热部表面的范围内,或者所述红外加热部表面在所述靶源表面所在的平面上的投影在所述靶源表面的范围内。
4.根据权利要求1所述的移动靶镀膜装置,其中,所述红外温度探测部设置在所述靶源表面与所述红外加热部表面之间。
5.根据权利要求3所述的移动靶镀膜装置,其中,所述靶源面积小于或等于所述红外加热部面积。
6.根据权利要求1-5任一项所述的移动靶镀膜装置,其中,所述红外加热部由多个红外加热辐射片组成,
当所述控制部判断所述靶源表面某部分温度低于其他部分的温度且温度差值超过设定值时,所述控制部启动与所述温度较低的部分靶源表面相对的红外加热辐射片,加热所述温度较低的部分靶源表面,至所述靶源表面温度均匀时停止加热。
7.根据权利要求6所述的移动靶镀膜装置,其中,在所述每个红外加热辐射片上设置有辐射汇聚结构。
8.根据权利要求1-5的任一项所述的移动靶镀膜装置,其中,所述红外加热部包括一个红外加热辐射片,当所述控制部判断所述靶源表面某部分温度低于其他部分的温度、且温度差值超过设定值时,所述控制部控制所述红外加热辐射片转向并加热所述温度较低的部分靶源表面,至所述靶源表面温度均匀时停止加热。
9.根据权利要求1-5的任一项所述的移动靶镀膜装置,其中所述靶源表面为一整体。
10.根据权利要求1-5的任一项所述的移动靶镀膜装置,其中所述靶源表面由多个分立的子靶源组成。
11.根据权利要求10所述的移动靶镀膜装置,其中所述多个分立的子靶源排布为环形。
12.根据权利要求1-5的任一项所述的移动靶镀膜装置,其中,所述靶源承载部包括导轨和靶源支撑件,当所述靶源需要移动时,所述靶源支撑件在所述导轨上移动。
13.根据权利要求12所述的移动靶镀膜装置,其中,所述导轨为磁悬浮轨道,且所述磁悬浮轨道和所述靶源支撑件之间产生电磁排斥力,将所述靶源支撑件托起到悬浮状态。
14.根据权利要求12所述的移动靶镀膜装置,其中,所述导轨为气垫轨道,所述气垫轨道上设置有朝向所述靶源支撑件的多个气孔,所述气垫轨道上的多个气孔喷出高速气体,将所述靶源支撑件托起到悬浮状态。
15.根据权利要求1-5的任一项所述的移动靶镀膜装置,其中,所述靶源平行于地面设置,所述红外加热部设置在所述靶源上方。
16.根据权利要求1-5的任一项所述的移动靶镀膜装置,其中,所述红外加热部平行于地面设置,所述靶源设置在所述红外加热部上方。
17.根据权利要求1-5的任一项所述的移动靶镀膜装置,其中,所述靶源和所述红外加热部均垂直于地面设置。
18.根据权利要求1-5的任一项所述的移动靶镀膜装置,其中,所述红外温度探测部包括红外摄像管。
19.一种采用移动靶镀膜装置镀膜的方法,所述移动靶镀膜装置包括:靶源、靶源承载部、用于检测靶源表面温度的红外温度探测部、用于加热靶源的红外加热部、控制部,其特征在于,所述靶源承载部承载所述靶源并可驱动所述靶源在三维方向自由移动,所述红外温度探测部和所述红外加热部与所述控制部信号连接,
所述方法包括:所述控制部接收所述红外温度探测部的探测信号,判断所述靶源表面温度是否均匀;当所述控制部判断所述靶源表面某部分温度低于其他部分的温度且温度差值超过设定值时,则控制所述红外加热部加热所述温度较低的部分靶源表面,至所述靶源表面温度均匀时停止加热。
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Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102015112540A1 (de) * 2015-07-30 2017-02-16 Bayerische Motoren Werke Aktiengesellschaft Verfahren und Vorrichtung zum Beschichten einer Oberfläche
CN105483619B (zh) * 2016-01-26 2018-01-02 京东方科技集团股份有限公司 移动靶镀膜装置及镀膜方法
US20190033138A1 (en) * 2017-07-28 2019-01-31 United Technologies Corporation Processes and tooling for temperature controlled plasma spray coating
CN109913832A (zh) * 2017-12-12 2019-06-21 湘潭宏大真空技术股份有限公司 用于大面积玻璃磁控溅射镀膜生产线的溅镀装置
CN109957762B (zh) 2017-12-14 2020-11-27 京东方科技集团股份有限公司 蒸镀方法以及蒸镀装置
CN112015307B (zh) * 2020-09-16 2023-04-14 付小丰 一种多阶红外触摸屏边框
CN113526877B (zh) * 2021-07-27 2023-04-14 中国航发北京航空材料研究院 一种镀膜玻璃的制备方法及装置
CN116685708A (zh) * 2021-12-27 2023-09-01 华为技术有限公司 一种磁控溅射设备及其控制方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201118192A (en) * 2009-11-24 2011-06-01 Samsung Mobile Display Co Ltd Sputtering apparatus
CN102409301A (zh) * 2010-09-21 2012-04-11 鸿富锦精密工业(深圳)有限公司 磁控溅射靶结构
CN102560441A (zh) * 2010-12-23 2012-07-11 北京北方微电子基地设备工艺研究中心有限责任公司 加热控制方法、装置和系统,加热腔及等离子体设备
CN203826348U (zh) * 2014-05-09 2014-09-10 中芯国际集成电路制造(北京)有限公司 一种晶圆温度监控装置
CN104617008A (zh) * 2013-11-01 2015-05-13 沈阳芯源微电子设备有限公司 晶圆加热装置

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4324631A (en) * 1979-07-23 1982-04-13 Spin Physics, Inc. Magnetron sputtering of magnetic materials
SU1567271A1 (ru) * 1988-06-07 1990-05-30 Ворошиловградский машиностроительный институт Устройство дл извлечени и крутонаклонного транспортировани ферромагнитных предметов
RU2063859C1 (ru) * 1990-10-02 1996-07-20 Иркутское авиационное производственное объединение Транспортирующий спутник
RU2049152C1 (ru) * 1992-03-26 1995-11-27 Научно-производственное объединение "Оптика" Устройство для распыления материалов в вакууме
JP3430277B2 (ja) * 1995-08-04 2003-07-28 東京エレクトロン株式会社 枚葉式の熱処理装置
JPH09263939A (ja) * 1996-03-26 1997-10-07 Sharp Corp 加熱装置
WO2000044822A2 (en) * 1999-01-27 2000-08-03 The United States Of America, As Represented By The Secretary Of The Navy Fabrication of conductive/non-conductive nanocomposites by laser evaporation
US6333493B1 (en) * 1999-09-21 2001-12-25 Kabushiki Kaisha Toshiba Heat treating method and heat treating apparatus
US20020011205A1 (en) * 2000-05-02 2002-01-31 Shunpei Yamazaki Film-forming apparatus, method of cleaning the same, and method of manufacturing a light-emitting device
JP2002220661A (ja) * 2001-01-29 2002-08-09 Sharp Corp スパッタリング装置に用いられるバッキングプレートおよびスパッタリング方法
JP2002289601A (ja) * 2001-03-28 2002-10-04 Hitachi Kokusai Electric Inc 基板処理装置及び方法
CN1996552B (zh) * 2001-08-31 2012-09-05 克罗辛自动化公司 晶片机
JP2005327846A (ja) * 2004-05-13 2005-11-24 Nippon Telegr & Teleph Corp <Ntt> 基板加熱装置
US7431807B2 (en) * 2005-01-07 2008-10-07 Universal Display Corporation Evaporation method using infrared guiding heater
JP2006225757A (ja) * 2005-01-21 2006-08-31 Mitsubishi Heavy Ind Ltd 真空蒸着装置
US7608308B2 (en) * 2006-04-17 2009-10-27 Imra America, Inc. P-type semiconductor zinc oxide films process for preparation thereof, and pulsed laser deposition method using transparent substrates
RU2350686C2 (ru) * 2007-04-06 2009-03-27 Общество с ограниченной ответственностью "УФ-техника" Способ получения тонких пленок карбида кремния методом вакуумной лазерной абляции
KR20090041316A (ko) * 2007-10-23 2009-04-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 성막 방법 및 발광 장치의 제작 방법
US8150242B2 (en) * 2008-10-31 2012-04-03 Applied Materials, Inc. Use of infrared camera for real-time temperature monitoring and control
JP2010168649A (ja) * 2008-12-26 2010-08-05 Canon Anelva Corp 基板処理装置、成膜方法、電子デバイスの生産方法
US9664974B2 (en) * 2009-03-31 2017-05-30 View, Inc. Fabrication of low defectivity electrochromic devices
CN202643828U (zh) * 2012-06-14 2013-01-02 沈阳新瑞真空设备有限公司 一种磁控溅射阴极移动靶
CN103484826A (zh) * 2012-06-14 2014-01-01 沈阳新瑞真空设备有限公司 一种磁控溅射阴极移动靶
CN105483619B (zh) * 2016-01-26 2018-01-02 京东方科技集团股份有限公司 移动靶镀膜装置及镀膜方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201118192A (en) * 2009-11-24 2011-06-01 Samsung Mobile Display Co Ltd Sputtering apparatus
CN102409301A (zh) * 2010-09-21 2012-04-11 鸿富锦精密工业(深圳)有限公司 磁控溅射靶结构
CN102560441A (zh) * 2010-12-23 2012-07-11 北京北方微电子基地设备工艺研究中心有限责任公司 加热控制方法、装置和系统,加热腔及等离子体设备
CN104617008A (zh) * 2013-11-01 2015-05-13 沈阳芯源微电子设备有限公司 晶圆加热装置
CN203826348U (zh) * 2014-05-09 2014-09-10 中芯国际集成电路制造(北京)有限公司 一种晶圆温度监控装置

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