WO2012053532A1 - 有機膜形成装置及び有機膜形成方法 - Google Patents
有機膜形成装置及び有機膜形成方法 Download PDFInfo
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- WO2012053532A1 WO2012053532A1 PCT/JP2011/074003 JP2011074003W WO2012053532A1 WO 2012053532 A1 WO2012053532 A1 WO 2012053532A1 JP 2011074003 W JP2011074003 W JP 2011074003W WO 2012053532 A1 WO2012053532 A1 WO 2012053532A1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
- H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
- G03F7/2014—Contact or film exposure of light sensitive plates such as lithographic plates or circuit boards, e.g. in a vacuum frame
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
- H10K71/164—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/40—Thermal treatment, e.g. annealing in the presence of a solvent vapour
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/40—Thermal treatment, e.g. annealing in the presence of a solvent vapour
- H10K71/421—Thermal treatment, e.g. annealing in the presence of a solvent vapour using coherent electromagnetic radiation, e.g. laser annealing
Definitions
- the present invention relates to an organic film forming apparatus and an organic film forming method, and more particularly to a technical field in which an organic material is deposited on an object to be formed and then cured to form an organic film.
- Patent Document 1 proposes that the sealing layer of the organic EL element is a laminated film in which at least a barrier layer, an organic layer, and a barrier layer are sequentially formed.
- Patent Document 2 includes a chamber for depositing an organic material of an organic film, a chamber for curing the organic material, and a chamber for depositing an inorganic film, and the organic film and the inorganic film can be continuously formed.
- Membrane devices have been proposed.
- a method is proposed in which an organic film is deposited by passing an object to be formed under the organic material deposition mechanism and then passing under the curing mechanism to cure the organic material.
- the temperature of the film formation target fluctuates during the movement, and the deposited organic material re-evaporates. Further, since the film formation target is moved, it is difficult to form a pattern using a mask.
- the present invention has been created to solve the above-described disadvantages of the prior art, and its purpose is to adhere an organic material and then cure the organic material while the film formation target is kept stationary.
- An organic film forming apparatus and an organic film forming method capable of forming a film are provided.
- the present invention is an organic film forming apparatus for forming an organic film of a photoreactive material that is cured when irradiated with light, and includes a vacuum chamber and a plurality of devices disposed in the vacuum chamber.
- An organic film forming apparatus comprising: a light irradiation device that emits light toward the mask while moving between the shower plate and the substrate stage; and a heating device that raises the temperature of the shower plate.
- the present invention includes a shield plate that surrounds a portion near the substrate stage in a space between the shower plate and the substrate stage, and a shield plate heating device that heats the shield plate, and the shield plate.
- the photoreactive material is configured to be discharged from the shower plate toward a film formation space that is surrounded by a space, and an exhaust port for evacuating the inside of the vacuum chamber is provided outside the film formation space. It is the organic film formation apparatus provided in.
- the present invention is configured such that the light irradiation device passes between the shield plate and the shower plate and passes between the substrate stage and the shower plate from the outside of the film formation space.
- Organic film forming apparatus is an organic film forming method for forming an organic film of a photoreactive material that cures when irradiated with light on the surface of an object to be formed, which is formed on a substrate stage disposed in a vacuum chamber. A film object is placed, a mask is placed in contact with the surface of the film formation object, the film formation object is cooled, and the vacuum chamber is evacuated to evacuate the photoreactive material from above the mask.
- the light irradiation device that emits light emits the light while moving on the mask, and is incident on the liquid film positioned on the surface of the film formation target exposed on the bottom of the opening, An organic film of the photoreactive material is formed by curing the liquid film.
- a film forming method In the present invention, the space on the substrate stage is surrounded by a shield plate, the outside of the film formation space surrounded by the shield plate in the vacuum chamber is evacuated, and the photoreaction is performed while heating the shield plate.
- This is an organic film forming method for filling the film formation space with a conductive material.
- the present invention is an organic film forming method in which evacuation in the vacuum chamber is stopped when light is emitted from the light irradiation device to irradiate the liquid film.
- UV light that cures the organic material can be irradiated while the film formation target is kept stationary, preventing re-evaporation of the organic material due to changes in the temperature of the film formation target, and masking. Pattern deposition using can be performed.
- reference numeral 10 denotes an organic film forming apparatus according to the present invention
- reference numeral 5 denotes a film formation target on which an organic film is formed on the surface by the organic film forming apparatus 10.
- the organic film forming apparatus 10 includes a vacuum chamber 11 to which a vacuum pump 12 is connected, a substrate stage 14 on which a film formation target 5 is disposed, and light in a state of either or both of a gaseous state and a microdroplet state. And a raw material supply device 18 for supplying the reactive material to the shower plate 15 together with the carrier gas.
- the shower plate 15 is hollow inside, and the photoreactive material supplied together with the carrier gas from the raw material supply device 18 is introduced into the hollow portion.
- the shower plate 15 is provided with a plurality of discharge ports 16 connected to a hollow portion on one side, and the photoreactive material is discharged from the discharge port 16.
- the surface of the shower plate 15 provided with the discharge port 16 and the surface of the substrate stage 14 on which the film formation target 5 is disposed are located inside the vacuum chamber 11 and are disposed so as to face each other.
- the photoreactive material When the photoreactive material is supplied from the material supply device 18 to the shower plate 15 together with the carrier gas, the light is directed from the discharge port 16 of the shower plate 15 toward the surface on which the film formation target 5 of the substrate stage 14 is disposed.
- a gas or microdroplet of reactive material is configured to be released.
- a shield plate 21 is provided inside the vacuum chamber 11, and a portion of the space between the substrate stage 14 and the shower plate 15 that is closer to the substrate stage 14 than the shower plate 15 is surrounded by the shield plate 21. ing.
- an exhaust port 13 is provided on the wall surface of the vacuum chamber 11 that is outside the film formation space 22, and a vacuum disposed outside the vacuum chamber 11.
- the pump 12 is connected to the exhaust port 13.
- the outside of the film formation space 22 is evacuated by the vacuum pump 12. Since the film formation space 22 is connected to a space outside the film formation space 22 in the vacuum chamber 11, the film formation space 22 is also evacuated.
- a gap is provided between the shield plate 21 and the shower plate 15.
- a light irradiation device 24 that emits light is arranged inside the vacuum chamber 11.
- the light irradiation device 24 is attached to the moving device 25, and enters and exits the inside and outside of the film formation space 22 through the gap between the shield plate 21 and the shower plate 15 inside the vacuum chamber 11. It is possible to pass through the inside of the film formation space 22.
- the light irradiation device 24 passes between the shower plate 15 and the substrate stage 14.
- the light emitted from the light irradiation device 24 is ultraviolet (Ultra violet rays).
- the acrylic resin material is irradiated with light having a wavelength that cures the acrylic resin.
- light of 200 nm to 450 nm is irradiated.
- a mask 31 is disposed in the film formation space 22.
- the mask 31 is held by a mask holding device 32 in parallel with the surface of the film formation target 5 placed on the substrate stage 14.
- the mask holding device 32 is provided with a curing moving device 33.
- the curing moving device 33 moves the mask holding device 32 together with the mask 31, changes the distance between the film forming target 5 on the substrate stage 14 and the mask 31, and forms the film forming target 5 and the mask 31. And the film forming object 5 and the mask 31 can be separated from each other.
- the curing moving device 33 changes the distance between the film formation target 5 on the substrate stage 14 and the mask 31 to bring the film formation target 5 and the mask 31 into close contact with each other. It is sufficient if the object 5 and the mask 31 can be separated from each other. That is, the present invention is not limited to the above configuration, and the curing moving device 33 may be provided on the substrate stage 14 and configured to move the substrate stage 14 together with the film formation target 5. It may be provided in both of the mask holding devices 32 so that both the substrate stage 14 and the mask holding device 32 are moved.
- the mask 31 is a thin metal plate, and one or more predetermined openings 34 are formed. When the mask 31 and the film formation target 5 are in close contact with each other, the surface of the film formation target 5 is formed on the bottom surface of the opening 34. Is partially exposed.
- the film formation target 5 is loaded from a processing apparatus (not shown) connected to the organic film forming apparatus 10 and placed on the substrate stage 14. State.
- a cooling device 35 is provided inside the substrate stage 14.
- a circulation device 30 is provided outside the vacuum chamber 11, and the cooled cooling medium is supplied to the cooling device 35 by the circulation device 30, and the substrate stage 14 is cooled to a predetermined temperature.
- the cooling medium flows through the substrate stage 14 and is heated, the cooling medium returns to the circulation device 30 to be cooled and supplied to the substrate stage 14.
- the operation of the cooling device 35 is maintained when the film formation target is placed on the substrate stage 14 for processing, the film formation target 5 on the substrate stage 14 is passed through the substrate stage 14 by the cooling device 35. And cooled to a predetermined temperature.
- the film formation target 5 When the film formation target 5 is placed on the substrate stage 14, the film formation target 5 is stopped at a position set in advance by the positioning device, and the space between the mask 31 and the film formation target 5 is set in advance. Alignment is performed by setting the relative positional relationship.
- the alignment device 29 is provided, and after the film formation target 5 is placed on the substrate stage 14, the film formation target 5 and the mask 31 are photographed by the alignment device 29, and the film formation target 5
- One or both of the substrate stage 14 and the mask holding device 32 may be moved so that the alignment marks respectively provided on the mask 31 and the mask 31 coincide with each other. In that case, the distance between the film forming object 5 and the mask 31 is moved while maintaining the distance between the mask 31 and the film forming object 5 so as to have a predetermined relative positional relationship.
- the curing moving device 33 moves either one or both of the substrate stage 14 and the mask holding device 32 to reduce the distance between the substrate stage 13 and the mask 31. As shown in FIG. 2, the mask 31 and the film formation target 5 come into contact with each other.
- the raw material supply device 18 is provided with a liquid photoreactive material 19 containing an acrylic resin raw material and a photoreaction initiator.
- the photoreactive material 19 includes a UV curable monomer (for example, neopentyl glycol diacrylate) or a UV curable oligomer (for example, epoxy) having at least one polymerizable functional group (for example, vinyl group) in one molecule. Acrylate, urethane acrylate).
- the photoreactive material 19 is made into fine droplets, or the gas of the photoreactive material 19 is generated, and the photoreactivity in the state of either or both of the microdroplets and the gas is generated. Material is supplied to the shower plate 15.
- the inside of the vacuum chamber 11 is evacuated from the exhaust port 13 by the vacuum pump 12 to be in a vacuum atmosphere, and the valve 17 provided on the shower plate 15 is opened while the inside of the vacuum chamber 11 is evacuated from the exhaust port 13. Then, the photoreactive material is discharged from the discharge port 16 of the shower plate 15 together with the carrier gas toward the film formation space 22.
- the substrate stage 14 is cooled by the cooling device 35. Therefore, the film formation target 5 is cooled by the cooling device 35 via the substrate stage 14.
- the film formation target 5 is cooled to a temperature lower than the evaporation temperature of the photoreactive material, and is cooled to a temperature of 30 ° C. or lower, for example. It is preferable if the cooling device 35 is configured to cool the film formation target 5 to a temperature of 0 ° C. or lower.
- the inside of the vacuum chamber 11 is evacuated from the exhaust port 13 located outside the film formation space 22, and is released into the film formation space 22.
- the photoreactive material gas and the carrier gas contact the surface of the film formation target 5 located below the bottom surface of the opening 34 of the mask 31, they adhere to the contacted area, and the opening of the surface of the film formation target 5 is open.
- a thin film (liquid film) of a liquid photoreactive material is formed in a portion located below the bottom surface of 34.
- the surface of the mask 31 has a property that the photoreactive material does not easily adhere, and the photoreactive material that has not adhered to the mask 31 and the film formation target 5 fills the film formation space 22 and is shielded. It flows out through the gap between the plate 21 and the shower plate 15, reaches the exhaust port 13 and is evacuated.
- the shower plate 15 is heated by a shower plate heating device 37.
- the surface on which the discharge port 16 is formed is heated to a temperature equal to or higher than the evaporation temperature in the vacuum atmosphere of the photoreactive material.
- the shield plate 21 and the inner wall surface of the vacuum chamber 11 are also heated to a temperature equal to or higher than the evaporation temperature in the vacuum atmosphere of the photoreactive material by the shield plate heating device 38 and the vacuum chamber heating device 39.
- the film formation target 5 is cooled, and a thin film (liquid film) of a liquid photoreactive material is formed on the surface of the film formation target 5.
- the release of the photoreactive material and the carrier gas is stopped, and the vacuum exhaust inside the vacuum chamber 11 from the exhaust port 13 is also stopped.
- the inside of the vacuum chamber 11 is set to a pressure of 10 Pa or more and several 100 Pa or less, and the film formation target 5 is cooled, so that a thin film (liquid film) of a liquid photoreactive material is used. ) Does not evaporate. Therefore, the film thickness value of the thin film (liquid film) of the liquid photoreactive material is not reduced.
- the light irradiation device 24 is located outside the shield plate 21 and outside the space between the substrate stage 14 and the shower plate 15. It is located where the photoreactive material emitted from the discharge port 16 does not hit.
- the light irradiation device 24 After the release of the photoreactive material and the carrier gas from the shower plate 15 is stopped, the light irradiation device 24 starts to emit light (here, ultraviolet light having a wavelength that causes the photoreactive material to react). Light is applied to the surface of the film formation target 5 and the surface of the mask 31 at a location facing the apparatus 24.
- light here, ultraviolet light having a wavelength that causes the photoreactive material to react.
- the light irradiation device 24 starts to move, moves between the mask 31 and the shower plate 15, and faces the film formation target surface 5 exposed on the mask 31 surface and the bottom surface of the opening 34.
- the thin film (liquid film) of the liquid photoreactive material on the surface of the film object 5 is reacted and cured, and the organic film obtained from the photoreactive material is positioned at the opening 34 of the mask 31 on the surface of the film object 5.
- an acrylic resin film is formed. While the depth of the opening 34 of the mask 31 is about 1 mm, the film thickness of the formed organic film is about 1 ⁇ m to 2 ⁇ m.
- the surface of the film formation target 5 is protected. It is used as a protective film that prevents moisture from entering.
- FIG. 3 shows a state in the middle of movement of the light irradiation device 24.
- the surface of the shower plate 15 where the discharge port 16 is provided and the surface of the substrate stage 14 on which the film formation target 5 is disposed are located inside the vacuum chamber 11 and are disposed so as to face each other. 1 to 3, the present invention is not limited to the case where the shower plate 15 is disposed above the substrate stage 14, and the shower plate 15 may be disposed below the substrate stage 14. Alternatively, the shower plate 15 and the substrate stage 14 may be arranged at the same height.
- the photoreactive material 19 is not limited to the organic material containing the acrylic resin raw material and the photoreaction initiator described above, and other organic materials that are cured when irradiated with light can also be used.
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Abstract
Description
特許文献1では、有機EL素子の封止層が少なくともバリア層、有機層、バリア層を順次形成した積層膜とすることが提案されている。
前記シャワープレートと前記基板ステージの間を移動しながら前記マスクに向けて光を放射する光照射装置と、前記シャワープレートを昇温させる加熱装置とを有する有機膜形成装置である。
本発明は、前記シャワープレートと前記基板ステージとの間の空間のうち、前記基板ステージに近い部分の取り囲むシールド板と、前記シールド板を加熱するシールド板用加熱装置とを有し、前記シールド板で取り囲まれた空間である成膜空間に向けて、前記シャワープレートから前記光反応性材料が放出されるように構成され、前記真空槽内を真空排気する排気口は、前記成膜空間の外部に設けられた有機膜形成装置である。
また、本発明は、前記光照射装置は、前記成膜空間の外側から、前記シールド板と前記シャワープレートの間を通って、前記基板ステージと前記シャワープレートとの間を通過するように構成された有機膜形成装置である。
本発明は、光が照射されると硬化する光反応性材料の有機膜を成膜対象物の表面に形成する有機膜形成方法であって、真空槽内に配置された基板ステージ上に前記成膜対象物を配置し、前記成膜対象物の表面にマスクを接触して配置し、前記成膜対象物を冷却し、前記真空槽内を真空排気しながら、前記マスク上から前記光反応性材料を放出して、前記マスクの開口底面に露出する前記成膜対象物の表面に付着させ、付着した部分に前記光反応性材料の液状膜を形成し、前記真空槽内の真空排気を停止した状態で、光を放射する光照射装置に、前記マスク上を移動させながら前記光を放射させ、前記開口底面に露出する前記成膜対象物表面上に位置する前記液状膜に入射させ、前記液状膜を硬化させて前記光反応性材料の有機膜を形成する有機膜形成方法である。
本発明は、前記基板ステージ上の空間をシールド板で囲っておき、前記真空槽内の前記シールド板で囲まれた成膜空間の外側を真空排気し、前記シールド板を加熱しながら前記光反応性材料を前記成膜空間に充満させる有機膜形成方法である。
本発明は、前記光照射装置から光を放射させて前記液状膜に照射する際、前記真空槽内の真空排気を停止する有機膜形成方法である。
シャワープレート15は、内部が中空であり、原料供給装置18からキャリアガスと共に供給される光反応性材料は、中空部分の中に導入される。シャワープレート15は、一面に中空の部分に接続された複数の放出口16が設けられており、光反応性材料は、放出口16から放出される。
真空槽11の内部には、光を放射する光照射装置24が配置されている。光照射装置24は移動装置25に取り付けられており、真空槽11の内部において、成膜空間22の外部と内部との間を、シールド板21とシャワープレート15との間の隙間を通って出入りでき、成膜空間22の内部を通過できるように構成されている。そのとき、光照射装置24は、シャワープレート15と基板ステージ14との間を通過する。
光照射装置24が放射する光は、紫外線(Ultra violet rays)であり、アクリル樹脂を硬化させる際には、アクリル樹脂の原料に、アクリル樹脂を硬化させる波長の光を照射する。ここでは、200nm~450nmの光を照射する。
冷却媒体は基板ステージ14内を流れて昇温されると、循環装置30に戻って冷却され、基板ステージ14に供給される。
基板ステージ14上に成膜対象物を配置して処理する際に冷却装置35の動作が維持されると、基板ステージ14上の成膜対象物5は、冷却装置35によって、基板ステージ14を介して所定温度に冷却される。
基板ステージ14は、冷却装置35によって、冷却されており、従って、成膜対象物5は、基板ステージ14を介して、冷却装置35によって冷却されている。成膜対象物5は、光反応性材料の蒸発温度よりも低い温度に冷却されており、例えば、30℃以下の温度に冷却されている。冷却装置35は、成膜対象物5を0℃以下の温度に冷却するように構成されていれば、好ましい。
有機膜が開口底面に位置する成膜対象物5表面に形成された後、マスク31と成膜対象物5とを離間させ、有機膜が形成された成膜対象物5を真空槽11の外部に搬出し、未成膜の成膜対象物5を基板ステージ14上に配置して上記と同じ手順で有機膜を形成する。
10……有機膜形成装置
11……真空槽
13……排気口
14……基板ステージ
15……シャワープレート
16……放出口
21……シールド板
22……成膜空間
24……光照射装置
31……マスク
32……マスク保持部
34……開口
35……冷却装置
37……(シャワープレート用)加熱装置
Claims (6)
- 光が照射されると硬化する光反応性材料の有機膜を形成する有機膜形成装置であって、
真空槽と、
前記真空槽内に配置された複数の放出口から光反応性材料を放出するシャワープレートと、
少なくとも前記シャワープレートと対面する面が前記真空槽内に配置された基板ステージと、
前記基板ステージ上に配置された成膜対象物を冷却する冷却装置と、
前記基板ステージ上の前記成膜対象物に配置されるマスクを保持するマスク保持装置と、
前記シャワープレートと前記基板ステージの間を移動しながら前記マスクに向けて光を放射する光照射装置と、
前記シャワープレートを昇温させる加熱装置とを有する有機膜形成装置。 - 前記シャワープレートと前記基板ステージとの間の空間のうち、前記基板ステージに近い部分の取り囲むシールド板と、
前記シールド板を加熱するシールド板用加熱装置とを有し、
前記シールド板で取り囲まれた空間である成膜空間に向けて、前記シャワープレートから前記光反応性材料が放出されるように構成され、
前記真空槽内を真空排気する排気口は、前記成膜空間の外部に設けられた請求項1記載の有機膜形成装置。 - 前記光照射装置は、前記成膜空間の外側から、前記シールド板と前記シャワープレートの間を通って、前記基板ステージと前記シャワープレートとの間を通過するように構成された請求項1又は請求項2のいずれか1項記載の有機膜形成装置。
- 光が照射されると硬化する光反応性材料の有機膜を成膜対象物の表面に形成する有機膜形成方法であって、
真空槽内に配置された基板ステージ上に前記成膜対象物を配置し、
前記成膜対象物の表面にマスクを接触して配置し、
前記成膜対象物を冷却し、前記真空槽内を真空排気しながら、前記マスク上から前記光反応性材料を放出して、前記マスクの開口底面に露出する前記成膜対象物の表面に付着させ、付着した部分に前記光反応性材料の液状膜を形成し、
前記真空槽内の真空排気を停止した状態で、
光を放射する光照射装置に、前記マスク上を移動させながら前記光を放射させ、
前記開口底面に露出する前記成膜対象物表面上に位置する前記液状膜に入射させ、前記液状膜を硬化させて前記光反応性材料の有機膜を形成する有機膜形成方法。 - 前記基板ステージ上の空間をシールド板で囲っておき、
前記真空槽内の前記シールド板で囲まれた成膜空間の外側を真空排気し、
前記シールド板を加熱しながら前記光反応性材料を前記成膜空間に充満させる請求項4記載の有機膜形成方法。 - 前記光照射装置から光を放射させて前記液状膜に照射する際、前記真空槽内の真空排気を停止する請求項4又は請求項5のいずれか1項記載の有機膜形成方法。
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