JP2007173145A - 転写用基板、転写方法、および有機電界発光素子の製造方法 - Google Patents
転写用基板、転写方法、および有機電界発光素子の製造方法 Download PDFInfo
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Abstract
【解決手段】支持基板11と、支持基板11上に形成された光熱変換層12と、光熱変換層12上に形成された有機材料で構成された転写層14とを備えた転写用基板1において、光熱変換層12と転写層14との間に、光熱変換層12を構成する材料の拡散を防止する拡散防止層13を設けた。拡散防止層13はシリコンの窒化物またはシリコンの酸化物からなる。光熱変換層12は金属材料を用いて構成されている。
【選択図】図1
Description
ここで、材料の拡散とは、材料の少なくとも一部が、当初の領域を越えて存在することを意味し、材料が広がった範囲や広がった材料の量は問わない。
図1は、実施形態の転写用基板1の構成を説明するための断面構成図である。この図に示す転写用基板1は、例えば有機電界発光素子の発光層を形成するためのものであり、支持基板11上に、光熱変換層12、拡散防止層13、および転写層14をこの順に形成してなる。
転写層14gは、例えば上記ADNに、緑色発光性のゲスト材料であるクマリン6を5重量%で混合した材料によって構成され、30nm程度の膜厚で蒸着成膜されていることとする。
図2〜図4は、上述した構成の転写用基板1(1b,1g,1r)を用いた転写方法、およびこの転写方法を用いた有機電界発光素子の製造方法を含む表示装置の製造方法を示す断面工程図である。以下、これらの断面工程図に基づいて、工程手順を説明する。
表示装置を構成する青色発光素子41bを、下記(1)〜(4)の手順で作製した。
実施例1(1)の転写用基板1bの作製工程において、光熱変換層12上に、酸化シリコン(SiO2)からなる拡散防止層13を100nmの膜厚でCVD法によって成膜し、その上に青色転写層14bを成膜した事以外は、実施例1と同様にして青色発光素子41bを作製した。
実施例1(1)の転写用基板1bの作製工程において、光熱変換層12上に、拡散防止層13を成膜せず、青色転写層14bを直接成膜したこと以外は、実施例1と同様にして青色発光素子41bを作製した。
実施例1(1)の転写用基板1bの作製手順において、転写層の材料構成を換えたこと以外は、実施例1と同様の手順で緑色発光素子41gを作製した。
実施例3(1)における転写用基板1gの作製工程において、光熱変換層12上に、拡散防止層13を形成せず、緑色転写層14gを直接成膜したこと以外は、実施例4と同様にして緑色発光素子41gを作製した。
実施例1(1)の転写用基板1bの作製手順において、転写層の材料構成を換えたこと以外は、実施例1と同様の手順で赤色発光素子41rを作製した。
実施例4(1)の転写用基板1rの作製工程において、光熱変換層12上に、拡散防止層13を成膜せず、光熱変換層12上に赤色転写層14rを直接成膜したこと以外は、実施例1と同様にして赤色発光素子41rを作製した。
以上のような実施例1〜4および比較例1〜3については、それぞれの例と同様の工程で各発光層を転写形成した状態において、二次イオン質量分析(SIMS)による発光層への光熱変換層(Mo)の拡散の有無を調べた。この結果、比較例1〜3では、発光層の領域において光熱変換層を構成する元素(Mo)が検出され、光熱変換層の発光層側(転写層側)への拡散が確認された。これに対して実施例1〜4では、発光層の領域において光熱変換層を構成する元素(Mo)の拡散は確認されなかった。これにより、光熱変換層と転写層との間に、拡散防止層を設けることによる光熱変換層の拡散防止の効果が確認された。
Claims (6)
- 支持基板上に、光熱変換層、および有機材料からなる転写層がこの順に形成された転写用基板において、
前記光熱変換層と前記転写層との間に、当該光熱変換層を構成する材料の拡散を防止する拡散防止層が設けられている
ことを特徴とする転写用基板。 - 請求項1記載の転写用基板において、
前記拡散防止層がシリコンの窒化物またはシリコンの酸化物からなる
ことを特徴とする転写用基板。 - 請求項1記載の転写用基板において、
前記光熱変換層は金属材料を用いて構成されている
ことを特徴とする転写用基板。 - 請求項1記載の転写用基板において、
前記転写層は、発光材料を含有する
ことを特徴とする転写用基板。 - 支持基板上に、光熱変換層、拡散防止層、および有機材料からなる転写層をこの順に形成してなる転写用基板を、被転写基板に対して当該転写層を向けた状態で対向配置し、
前記支持基板側から光を照射することにより、前記光熱変換層を構成する材料の前記転写層側への拡散を防止しつつ、当該光熱変換層において前記光を熱変換することにより当該転写層を前記被転写基板側に熱転写する
ことを特徴とする転写方法。 - 基板上に下部電極をパターン形成した後、前記下部電極上に少なくとも発光層を含む有機層を成膜し、次に有機層を介して前記下部電極上に積層する状態で上部電極を形成する有機電界発光素子の製造方法において、
基板上に下部電極をパターン形成した後、
支持基板上に光熱変換層、拡散防止層、および発光材料を含む有機材料で構成された転写層をこの順に形成してなる転写用基板を、前記基板に対して当該転写層を向けた状態で対向配置し、
前記支持基板側から光を照射することにより、前記光熱変換層を構成する材料の前記転写層側への拡散を防止しつつ、当該光熱変換層において前記光を熱変換することにより当該転写層を前記下部電極上に熱転写して前記発光層を形成する
ことを特徴とする有機電界発光素子の製造方法。
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US11/615,213 US7553602B2 (en) | 2005-12-26 | 2006-12-22 | Transfer substrate, transfer method, and organic electroluminescent device manufacturing method |
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TWI335190B (en) | 2010-12-21 |
US20080124647A1 (en) | 2008-05-29 |
US7553602B2 (en) | 2009-06-30 |
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