JP2017033903A - 有機el素子の製造方法 - Google Patents
有機el素子の製造方法 Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 43
- 239000000463 material Substances 0.000 claims abstract description 122
- 239000000758 substrate Substances 0.000 claims abstract description 100
- 239000002019 doping agent Substances 0.000 claims abstract description 79
- 238000002347 injection Methods 0.000 claims abstract description 34
- 239000007924 injection Substances 0.000 claims abstract description 34
- 229910052751 metal Inorganic materials 0.000 claims abstract description 24
- 239000002184 metal Substances 0.000 claims abstract description 24
- 238000000034 method Methods 0.000 claims description 29
- 230000005525 hole transport Effects 0.000 claims description 24
- 238000009792 diffusion process Methods 0.000 claims description 16
- 230000002265 prevention Effects 0.000 claims description 6
- 238000010438 heat treatment Methods 0.000 claims description 5
- 238000000926 separation method Methods 0.000 claims description 4
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 230000008021 deposition Effects 0.000 claims 2
- 230000000873 masking effect Effects 0.000 abstract description 8
- 238000003475 lamination Methods 0.000 abstract description 2
- 238000000151 deposition Methods 0.000 abstract 3
- 239000000243 solution Substances 0.000 abstract 1
- 238000005401 electroluminescence Methods 0.000 description 51
- 239000010408 film Substances 0.000 description 4
- PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Chemical compound [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 description 4
- 239000003086 colorant Substances 0.000 description 3
- OBAJPWYDYFEBTF-UHFFFAOYSA-N 2-tert-butyl-9,10-dinaphthalen-2-ylanthracene Chemical compound C1=CC=CC2=CC(C3=C4C=CC=CC4=C(C=4C=C5C=CC=CC5=CC=4)C4=CC=C(C=C43)C(C)(C)C)=CC=C21 OBAJPWYDYFEBTF-UHFFFAOYSA-N 0.000 description 2
- HXWWMGJBPGRWRS-CMDGGOBGSA-N 4- -2-tert-butyl-6- -4h-pyran Chemical compound O1C(C(C)(C)C)=CC(=C(C#N)C#N)C=C1\C=C\C1=CC(C(CCN2CCC3(C)C)(C)C)=C2C3=C1 HXWWMGJBPGRWRS-CMDGGOBGSA-N 0.000 description 2
- VFUDMQLBKNMONU-UHFFFAOYSA-N 9-[4-(4-carbazol-9-ylphenyl)phenyl]carbazole Chemical group C12=CC=CC=C2C2=CC=CC=C2N1C1=CC=C(C=2C=CC(=CC=2)N2C3=CC=CC=C3C3=CC=CC=C32)C=C1 VFUDMQLBKNMONU-UHFFFAOYSA-N 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- NSABRUJKERBGOU-UHFFFAOYSA-N iridium(3+);2-phenylpyridine Chemical compound [Ir+3].[C-]1=CC=CC=C1C1=CC=CC=N1.[C-]1=CC=CC=C1C1=CC=CC=N1.[C-]1=CC=CC=C1C1=CC=CC=N1 NSABRUJKERBGOU-UHFFFAOYSA-N 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- JKQOBWVOAYFWKG-UHFFFAOYSA-N molybdenum trioxide Chemical compound O=[Mo](=O)=O JKQOBWVOAYFWKG-UHFFFAOYSA-N 0.000 description 2
- 238000005192 partition Methods 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 2
- POXIZPBFFUKMEQ-UHFFFAOYSA-N 2-cyanoethenylideneazanide Chemical group [N-]=C=[C+]C#N POXIZPBFFUKMEQ-UHFFFAOYSA-N 0.000 description 1
- YOZHUJDVYMRYDM-UHFFFAOYSA-N 4-(4-anilinophenyl)-3-naphthalen-1-yl-n-phenylaniline Chemical compound C=1C=C(C=2C(=CC(NC=3C=CC=CC=3)=CC=2)C=2C3=CC=CC=C3C=CC=2)C=CC=1NC1=CC=CC=C1 YOZHUJDVYMRYDM-UHFFFAOYSA-N 0.000 description 1
- RFVBBELSDAVRHM-UHFFFAOYSA-N 9,10-dinaphthalen-2-yl-2-phenylanthracene Chemical compound C1=CC=CC=C1C1=CC=C(C(C=2C=C3C=CC=CC3=CC=2)=C2C(C=CC=C2)=C2C=3C=C4C=CC=CC4=CC=3)C2=C1 RFVBBELSDAVRHM-UHFFFAOYSA-N 0.000 description 1
- 229910001316 Ag alloy Inorganic materials 0.000 description 1
- XPYYCRWXOCVWCW-UHFFFAOYSA-N FC=1C(=C(C=C(C1)F)[Ir]C=1C(=NC=CC1)C(=O)O)C1=C(C=CC=C1)C1=NC=CC=C1 Chemical compound FC=1C(=C(C=C(C1)F)[Ir]C=1C(=NC=CC1)C(=O)O)C1=C(C=CC=C1)C1=NC=CC=C1 XPYYCRWXOCVWCW-UHFFFAOYSA-N 0.000 description 1
- 229910001111 Fine metal Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- -1 aluminum silver Chemical compound 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- RBTKNAXYKSUFRK-UHFFFAOYSA-N heliogen blue Chemical compound [Cu].[N-]1C2=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=NC([N-]1)=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=N2 RBTKNAXYKSUFRK-UHFFFAOYSA-N 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 229910000476 molybdenum oxide Inorganic materials 0.000 description 1
- PQQKPALAQIIWST-UHFFFAOYSA-N oxomolybdenum Chemical compound [Mo]=O PQQKPALAQIIWST-UHFFFAOYSA-N 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000003303 reheating Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
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Abstract
Description
図1〜図6は、有機EL素子の製造工程を示す、有機EL素子の断面図である。また、図7は、本発明に係る有機EL素子の製造方法を示すフローチャートである。以下、図7のフローチャートを用いて、図1〜図6に示す断面図を適宜参照しながら、有機EL素子の製造方法を説明する。
ドーパント材は、一定温度以上の熱がある領域に拡散し、図3(b)に示されるように、電流が流れた領域を中心に、赤色発光層300aが形成される。
上記実施の形態に示したように、本実施の形態に係る有機EL素子の製造方法においては、有機EL素子において元々発光のために用いる電極から、有機EL素子の各層の積層方向に電流を流すことにより、ジュール熱を発生させて、接触させたドーパント材を拡散させることができる。したがって、本発明に係る有機EL素子の製造方法は、発光のために用いる電極を用いることにより、余分な電極を基板上に形成する手間及びそのためのコスト増を回避することができる。さらには、各発光層用に設けられる電極を用いることにより、その電極から電流を流すことで、適切な個所にジュール熱を発生させて、必要な個所にドーパント材を拡散させることができるので、マスキングの必要性もない。
上記実施の形態に本発明に係る発明の一実施態様を説明したが、本発明に係る思想がこれに限られないことは言うまでもない。以下、本発明に係る思想として含まれる各種変形例について説明する。
ここに、本発明に係る有機EL素子の製造方法の一態様とその効果について説明する。
101a 赤色発光層用電極(第1の電極)
101b 緑色発光層用電極(第1の電極)
101c 青色発光層用電極(第1の電極)
102 隔壁
103 ホール注入層
104 ホール輸送層
105 ホスト材料層
200a 赤色発光層用ドナー基板
200b 緑色発光層用ドナー基板
200c 青色発光層用ドナー基板
201 基板
202 金属層
203a 赤色ドーパント材料層
203b 緑色ドーパント材料層
203c 青色ドーパント材料層
300a 赤色発光層
300b 緑色発光層
300c 青色発光層
610 電子輸送層
620 電子注入層
630 電極(第2の電極)
800 キャリアインジェクション層
900 拡散防止層
Claims (6)
- 基板に、構成される画素の色に対応した第1の電極を設ける第1電極形成ステップと、
前記基板の前記第1の電極が設けられている側に、ホール注入層を成膜するホール注入層成膜ステップと、
前記基板の前記ホール注入層が成膜されている側に、ホール輸送層を成膜するホール輸送層成膜ステップと、
前記基板の前記ホール輸送層が成膜されている側に、ドーパント材を拡散させるためのホスト材料層を成膜するホスト材料層成膜ステップと、
金属層にドーパント材が成膜されたドナー基板のドーパント材側を、前記ホスト材料層に接触させる接触ステップと、
前記ドーパント材に対応する色の画素に対応した第1の電極と前記金属層との間に、積層方向に、電流を印加する電流印加ステップと、
前記ドナー基板を前記基板から離間させる離間ステップと、
前記ドーパント材が拡散されたホスト材料層が成膜されている側に、第2の電極を設ける第2電極形成ステップと、
を含む有機EL素子の製造方法。 - 前記ドナー基板は、前記金属層と、前記ドーパント材の間に、電子注入層を備える
ことを特徴とする請求項1に記載の有機EL素子の製造方法。 - 前記有機EL素子の製造方法は、更に、
前記離間ステップと前記電極形成ステップとの間に、
前記基板の前記ホスト材料層側に、電子輸送層を成膜する電子輸送層成膜ステップと、
前記基板の前記電子輸送層が成膜されている側に、電子注入層を成膜する電子注入層成膜ステップとを含む
ことを特徴とする請求項1又は2に記載の有機EL素子の製造方法。 - 前記有機EL素子の製造方法は、更に、
前記ホール輸送層成膜ステップと前記ホスト材料層成膜ステップとの間に、前記基板の前記ホール輸送層が成膜されている側に、前記ドーパント材が前記ホール輸送層に拡散することを防止する拡散防止層を成膜する拡散防止層成膜ステップを含む
ことを特徴とする請求項1〜3のいずれか一項に記載の有機EL素子の製造方法。 - 前記有機EL素子の製造方法は、更に、
前記第2の電極が形成された後に、前記基板を加熱する加熱ステップを含む
ことを特徴とする請求項4に記載の有機EL素子の製造方法。 - 前記有機EL素子の製造方法は、更に、
前記接触ステップと、前記電流印加ステップと、前記離間ステップとを、発光色に応じたドナー基板ごとに実行する
ことを特徴とする請求項1〜5のいずれか一項に記載の有機EL素子の製造方法。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015156081A JP6642999B2 (ja) | 2015-08-06 | 2015-08-06 | 有機el素子の製造方法 |
KR1020177037378A KR20180038419A (ko) | 2015-08-06 | 2016-07-08 | 유기 el소자의 제조 방법 |
CN201680037703.9A CN107710877B (zh) | 2015-08-06 | 2016-07-08 | 有机el元件的制造方法 |
US15/747,816 US10276836B2 (en) | 2015-08-06 | 2016-07-08 | Method of manufacturing organic EL element |
PCT/JP2016/070217 WO2017022404A1 (ja) | 2015-08-06 | 2016-07-08 | 有機el素子の製造方法 |
TW105124435A TWI698155B (zh) | 2015-08-06 | 2016-08-02 | 有機el元件之製造方法 |
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JP2015156081A JP6642999B2 (ja) | 2015-08-06 | 2015-08-06 | 有機el素子の製造方法 |
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JP2017033903A true JP2017033903A (ja) | 2017-02-09 |
JP6642999B2 JP6642999B2 (ja) | 2020-02-12 |
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JP (1) | JP6642999B2 (ja) |
KR (1) | KR20180038419A (ja) |
CN (1) | CN107710877B (ja) |
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JP2003092182A (ja) * | 2001-09-18 | 2003-03-28 | Matsushita Electric Ind Co Ltd | 発光素子およびその製造方法 |
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US6641859B1 (en) * | 2000-06-08 | 2003-11-04 | Eastman Kodak Company | Method of making an emissive layer for an organic light-emitting device |
JP2002260856A (ja) | 2001-03-05 | 2002-09-13 | Victor Co Of Japan Ltd | 有機エレクトロルミネセンス素子の製造方法 |
JP4352379B2 (ja) | 2003-07-18 | 2009-10-28 | 日本ビクター株式会社 | 有機エレクトロルミネセンス素子の製造方法及び製造装置 |
US7316874B2 (en) | 2004-03-23 | 2008-01-08 | E. I. Du Pont De Nemours And Company | Process and donor elements for transferring thermally sensitive materials to substrates by thermal imaging |
KR100731728B1 (ko) * | 2004-08-27 | 2007-06-22 | 삼성에스디아이 주식회사 | 레이저 전사용 도너 기판 및 이를 이용한 유기 전계 발광소자의 제조 방법 |
KR20060089839A (ko) | 2005-02-04 | 2006-08-09 | 삼성에스디아이 주식회사 | 패터닝된 유기전계발광소자의 제조 방법 |
JP5292263B2 (ja) * | 2008-12-05 | 2013-09-18 | 株式会社半導体エネルギー研究所 | 成膜方法及び発光素子の作製方法 |
KR101570535B1 (ko) * | 2009-05-12 | 2015-11-20 | 엘지디스플레이 주식회사 | 유기발광다이오드 표시장치의 제조방법 |
KR101245220B1 (ko) | 2009-11-06 | 2013-03-19 | 엘지디스플레이 주식회사 | 유기발광다이오드 표시장치의 제조방법 |
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KR101368158B1 (ko) | 2010-10-21 | 2014-03-03 | 엘지디스플레이 주식회사 | 유기발광 다이오드 표시장치 및 그 제조방법 |
JP5515025B2 (ja) | 2011-10-06 | 2014-06-11 | 株式会社ブイ・テクノロジー | マスク、それに使用するマスク用部材、マスクの製造方法及び有機el表示用基板の製造方法 |
JP6194493B2 (ja) * | 2012-03-30 | 2017-09-13 | 株式会社ブイ・テクノロジー | 薄膜パターン形成方法 |
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2016
- 2016-07-08 US US15/747,816 patent/US10276836B2/en not_active Expired - Fee Related
- 2016-07-08 KR KR1020177037378A patent/KR20180038419A/ko unknown
- 2016-07-08 CN CN201680037703.9A patent/CN107710877B/zh not_active Expired - Fee Related
- 2016-07-08 WO PCT/JP2016/070217 patent/WO2017022404A1/ja active Application Filing
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Patent Citations (5)
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JP2003092182A (ja) * | 2001-09-18 | 2003-03-28 | Matsushita Electric Ind Co Ltd | 発光素子およびその製造方法 |
JP2007173145A (ja) * | 2005-12-26 | 2007-07-05 | Sony Corp | 転写用基板、転写方法、および有機電界発光素子の製造方法 |
JP2009043572A (ja) * | 2007-08-09 | 2009-02-26 | Sony Corp | 蒸発源、蒸発源の製造方法、及び有機el表示装置の製造方法 |
JP2010192826A (ja) * | 2009-02-20 | 2010-09-02 | Sony Corp | ドナー基板および表示装置の製造方法 |
JP2011138745A (ja) * | 2009-12-29 | 2011-07-14 | Samsung Mobile Display Co Ltd | パターン形成方法及び有機発光素子の製造方法 |
Also Published As
Publication number | Publication date |
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KR20180038419A (ko) | 2018-04-16 |
CN107710877B (zh) | 2019-06-11 |
TWI698155B (zh) | 2020-07-01 |
US10276836B2 (en) | 2019-04-30 |
TW201707511A (zh) | 2017-02-16 |
CN107710877A (zh) | 2018-02-16 |
US20180233706A1 (en) | 2018-08-16 |
WO2017022404A1 (ja) | 2017-02-09 |
JP6642999B2 (ja) | 2020-02-12 |
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