JP6642999B2 - 有機el素子の製造方法 - Google Patents
有機el素子の製造方法 Download PDFInfo
- Publication number
- JP6642999B2 JP6642999B2 JP2015156081A JP2015156081A JP6642999B2 JP 6642999 B2 JP6642999 B2 JP 6642999B2 JP 2015156081 A JP2015156081 A JP 2015156081A JP 2015156081 A JP2015156081 A JP 2015156081A JP 6642999 B2 JP6642999 B2 JP 6642999B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- substrate
- organic
- electrode
- light emitting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 39
- 239000000463 material Substances 0.000 claims description 112
- 239000000758 substrate Substances 0.000 claims description 89
- 239000002019 doping agent Substances 0.000 claims description 74
- 238000000034 method Methods 0.000 claims description 36
- 238000002347 injection Methods 0.000 claims description 30
- 239000007924 injection Substances 0.000 claims description 30
- 230000005525 hole transport Effects 0.000 claims description 23
- 229910052751 metal Inorganic materials 0.000 claims description 21
- 239000002184 metal Substances 0.000 claims description 21
- 238000009792 diffusion process Methods 0.000 claims description 14
- 238000010438 heat treatment Methods 0.000 claims description 4
- 238000005401 electroluminescence Methods 0.000 description 52
- 230000000873 masking effect Effects 0.000 description 7
- 239000003086 colorant Substances 0.000 description 6
- PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Chemical compound [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 description 4
- 230000002265 prevention Effects 0.000 description 4
- OBAJPWYDYFEBTF-UHFFFAOYSA-N 2-tert-butyl-9,10-dinaphthalen-2-ylanthracene Chemical compound C1=CC=CC2=CC(C3=C4C=CC=CC4=C(C=4C=C5C=CC=CC5=CC=4)C4=CC=C(C=C43)C(C)(C)C)=CC=C21 OBAJPWYDYFEBTF-UHFFFAOYSA-N 0.000 description 2
- HXWWMGJBPGRWRS-CMDGGOBGSA-N 4- -2-tert-butyl-6- -4h-pyran Chemical compound O1C(C(C)(C)C)=CC(=C(C#N)C#N)C=C1\C=C\C1=CC(C(CCN2CCC3(C)C)(C)C)=C2C3=C1 HXWWMGJBPGRWRS-CMDGGOBGSA-N 0.000 description 2
- VFUDMQLBKNMONU-UHFFFAOYSA-N 9-[4-(4-carbazol-9-ylphenyl)phenyl]carbazole Chemical group C12=CC=CC=C2C2=CC=CC=C2N1C1=CC=C(C=2C=CC(=CC=2)N2C3=CC=CC=C3C3=CC=CC=C32)C=C1 VFUDMQLBKNMONU-UHFFFAOYSA-N 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- NSABRUJKERBGOU-UHFFFAOYSA-N iridium(3+);2-phenylpyridine Chemical compound [Ir+3].[C-]1=CC=CC=C1C1=CC=CC=N1.[C-]1=CC=CC=C1C1=CC=CC=N1.[C-]1=CC=CC=C1C1=CC=CC=N1 NSABRUJKERBGOU-UHFFFAOYSA-N 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- JKQOBWVOAYFWKG-UHFFFAOYSA-N molybdenum trioxide Chemical compound O=[Mo](=O)=O JKQOBWVOAYFWKG-UHFFFAOYSA-N 0.000 description 2
- 238000005192 partition Methods 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- POXIZPBFFUKMEQ-UHFFFAOYSA-N 2-cyanoethenylideneazanide Chemical group [N-]=C=[C+]C#N POXIZPBFFUKMEQ-UHFFFAOYSA-N 0.000 description 1
- YOZHUJDVYMRYDM-UHFFFAOYSA-N 4-(4-anilinophenyl)-3-naphthalen-1-yl-n-phenylaniline Chemical compound C=1C=C(C=2C(=CC(NC=3C=CC=CC=3)=CC=2)C=2C3=CC=CC=C3C=CC=2)C=CC=1NC1=CC=CC=C1 YOZHUJDVYMRYDM-UHFFFAOYSA-N 0.000 description 1
- RFVBBELSDAVRHM-UHFFFAOYSA-N 9,10-dinaphthalen-2-yl-2-phenylanthracene Chemical compound C1=CC=CC=C1C1=CC=C(C(C=2C=C3C=CC=CC3=CC=2)=C2C(C=CC=C2)=C2C=3C=C4C=CC=CC4=CC=3)C2=C1 RFVBBELSDAVRHM-UHFFFAOYSA-N 0.000 description 1
- 229910001316 Ag alloy Inorganic materials 0.000 description 1
- XPYYCRWXOCVWCW-UHFFFAOYSA-N FC=1C(=C(C=C(C1)F)[Ir]C=1C(=NC=CC1)C(=O)O)C1=C(C=CC=C1)C1=NC=CC=C1 Chemical compound FC=1C(=C(C=C(C1)F)[Ir]C=1C(=NC=CC1)C(=O)O)C1=C(C=CC=C1)C1=NC=CC=C1 XPYYCRWXOCVWCW-UHFFFAOYSA-N 0.000 description 1
- 229910001111 Fine metal Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- -1 aluminum silver Chemical compound 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- RBTKNAXYKSUFRK-UHFFFAOYSA-N heliogen blue Chemical compound [Cu].[N-]1C2=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=NC([N-]1)=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=N2 RBTKNAXYKSUFRK-UHFFFAOYSA-N 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910000476 molybdenum oxide Inorganic materials 0.000 description 1
- PQQKPALAQIIWST-UHFFFAOYSA-N oxomolybdenum Chemical compound [Mo]=O PQQKPALAQIIWST-UHFFFAOYSA-N 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000003303 reheating Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
- 238000010792 warming Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/30—Devices specially adapted for multicolour light emission
- H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
- H10K50/125—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/14—Carrier transporting layers
- H10K50/15—Hole transporting layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/14—Carrier transporting layers
- H10K50/15—Hole transporting layers
- H10K50/155—Hole transporting layers comprising dopants
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/14—Carrier transporting layers
- H10K50/15—Hole transporting layers
- H10K50/157—Hole transporting layers between the light-emitting layer and the cathode
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/14—Carrier transporting layers
- H10K50/16—Electron transporting layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/17—Carrier injection layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/17—Carrier injection layers
- H10K50/171—Electron injection layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/81—Anodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/82—Cathodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/18—Deposition of organic active material using non-liquid printing techniques, e.g. thermal transfer printing from a donor sheet
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/40—Thermal treatment, e.g. annealing in the presence of a solvent vapour
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/80—Manufacture or treatment specially adapted for the organic devices covered by this subclass using temporary substrates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2101/00—Properties of the organic materials covered by group H10K85/00
- H10K2101/10—Triplet emission
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/1201—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/841—Applying alternating current [AC] during manufacturing or treatment
Description
図1〜図6は、有機EL素子の製造工程を示す、有機EL素子の断面図である。また、図7は、本発明に係る有機EL素子の製造方法を示すフローチャートである。以下、図7のフローチャートを用いて、図1〜図6に示す断面図を適宜参照しながら、有機EL素子の製造方法を説明する。
ドーパント材は、一定温度以上の熱がある領域に拡散し、図3(b)に示されるように、電流が流れた領域を中心に、赤色発光層300aが形成される。
上記実施の形態に示したように、本実施の形態に係る有機EL素子の製造方法においては、有機EL素子において元々発光のために用いる電極から、有機EL素子の各層の積層方向に電流を流すことにより、ジュール熱を発生させて、接触させたドーパント材を拡散させることができる。したがって、本発明に係る有機EL素子の製造方法は、発光のために用いる電極を用いることにより、余分な電極を基板上に形成する手間及びそのためのコスト増を回避することができる。さらには、各発光層用に設けられる電極を用いることにより、その電極から電流を流すことで、適切な個所にジュール熱を発生させて、必要な個所にドーパント材を拡散させることができるので、マスキングの必要性もない。
上記実施の形態に本発明に係る発明の一実施態様を説明したが、本発明に係る思想がこれに限られないことは言うまでもない。以下、本発明に係る思想として含まれる各種変形例について説明する。
ここに、本発明に係る有機EL素子の製造方法の一態様とその効果について説明する。
101a 赤色発光層用電極(第1の電極)
101b 緑色発光層用電極(第1の電極)
101c 青色発光層用電極(第1の電極)
102 隔壁
103 ホール注入層
104 ホール輸送層
105 ホスト材料層
200a 赤色発光層用ドナー基板
200b 緑色発光層用ドナー基板
200c 青色発光層用ドナー基板
201 基板
202 金属層
203a 赤色ドーパント材料層
203b 緑色ドーパント材料層
203c 青色ドーパント材料層
300a 赤色発光層
300b 緑色発光層
300c 青色発光層
610 電子輸送層
620 電子注入層
630 電極(第2の電極)
800 キャリアインジェクション層
900 拡散防止層
Claims (5)
- 基板に、構成される画素の色に対応した第1の電極を設ける第1電極形成ステップと、
前記基板の前記第1の電極が設けられている側に、ホール注入層を成膜するホール注入層成膜ステップと、
前記基板の前記ホール注入層が成膜されている側に、ホール輸送層を成膜するホール輸送層成膜ステップと、
前記基板の前記ホール輸送層が成膜されている側に、ドーパント材を拡散させるためのホスト材料層を成膜するホスト材料層成膜ステップと、
金属層にドーパント材が成膜されるとともに前記金属層と前記ドーパント材の間に電子注入層が備えられるドナー基板のドーパント材側を、前記ホスト材料層に接触させる接触ステップと、
前記ドーパント材に対応する色の画素に対応した第1の電極と前記金属層との間に、積層方向に、電流を印加する電流印加ステップと、
前記ドナー基板を前記基板から離間させる離間ステップと、
前記ドーパント材が拡散されたホスト材料層が成膜されている側に、第2の電極を設ける第2電極形成ステップと、
を含む有機EL素子の製造方法。 - 前記有機EL素子の製造方法は、更に、
前記離間ステップと前記電極形成ステップとの間に、
前記基板の前記ホスト材料層側に、電子輸送層を成膜する電子輸送層成膜ステップと、
前記基板の前記電子輸送層が成膜されている側に、電子注入層を成膜する電子注入層成膜ステップとを含む
ことを特徴とする請求項1に記載の有機EL素子の製造方法。 - 前記有機EL素子の製造方法は、更に、
前記ホール輸送層成膜ステップと前記ホスト材料層成膜ステップとの間に、前記基板の前記ホール輸送層が成膜されている側に、前記ドーパント材が前記ホール輸送層に拡散することを防止する拡散防止層を成膜する拡散防止層成膜ステップを含む
ことを特徴とする請求項1又は2に記載の有機EL素子の製造方法。 - 前記有機EL素子の製造方法は、更に、
前記第2の電極が形成された後に、前記基板を加熱する加熱ステップを含む
ことを特徴とする請求項3に記載の有機EL素子の製造方法。 - 前記有機EL素子の製造方法は、更に、
前記接触ステップと、前記電流印加ステップと、前記離間ステップとを、発光色に応じたドナー基板ごとに実行する
ことを特徴とする請求項1〜4のいずれか一項に記載の有機EL素子の製造方法。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015156081A JP6642999B2 (ja) | 2015-08-06 | 2015-08-06 | 有機el素子の製造方法 |
US15/747,816 US10276836B2 (en) | 2015-08-06 | 2016-07-08 | Method of manufacturing organic EL element |
PCT/JP2016/070217 WO2017022404A1 (ja) | 2015-08-06 | 2016-07-08 | 有機el素子の製造方法 |
KR1020177037378A KR20180038419A (ko) | 2015-08-06 | 2016-07-08 | 유기 el소자의 제조 방법 |
CN201680037703.9A CN107710877B (zh) | 2015-08-06 | 2016-07-08 | 有机el元件的制造方法 |
TW105124435A TWI698155B (zh) | 2015-08-06 | 2016-08-02 | 有機el元件之製造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015156081A JP6642999B2 (ja) | 2015-08-06 | 2015-08-06 | 有機el素子の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2017033903A JP2017033903A (ja) | 2017-02-09 |
JP6642999B2 true JP6642999B2 (ja) | 2020-02-12 |
Family
ID=57942938
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2015156081A Expired - Fee Related JP6642999B2 (ja) | 2015-08-06 | 2015-08-06 | 有機el素子の製造方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US10276836B2 (ja) |
JP (1) | JP6642999B2 (ja) |
KR (1) | KR20180038419A (ja) |
CN (1) | CN107710877B (ja) |
TW (1) | TWI698155B (ja) |
WO (1) | WO2017022404A1 (ja) |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6641859B1 (en) * | 2000-06-08 | 2003-11-04 | Eastman Kodak Company | Method of making an emissive layer for an organic light-emitting device |
JP2002260856A (ja) | 2001-03-05 | 2002-09-13 | Victor Co Of Japan Ltd | 有機エレクトロルミネセンス素子の製造方法 |
JP2003092182A (ja) * | 2001-09-18 | 2003-03-28 | Matsushita Electric Ind Co Ltd | 発光素子およびその製造方法 |
JP4352379B2 (ja) | 2003-07-18 | 2009-10-28 | 日本ビクター株式会社 | 有機エレクトロルミネセンス素子の製造方法及び製造装置 |
US7316874B2 (en) | 2004-03-23 | 2008-01-08 | E. I. Du Pont De Nemours And Company | Process and donor elements for transferring thermally sensitive materials to substrates by thermal imaging |
KR100731728B1 (ko) * | 2004-08-27 | 2007-06-22 | 삼성에스디아이 주식회사 | 레이저 전사용 도너 기판 및 이를 이용한 유기 전계 발광소자의 제조 방법 |
KR20060089839A (ko) | 2005-02-04 | 2006-08-09 | 삼성에스디아이 주식회사 | 패터닝된 유기전계발광소자의 제조 방법 |
JP2007173145A (ja) * | 2005-12-26 | 2007-07-05 | Sony Corp | 転写用基板、転写方法、および有機電界発光素子の製造方法 |
JP2009043572A (ja) | 2007-08-09 | 2009-02-26 | Sony Corp | 蒸発源、蒸発源の製造方法、及び有機el表示装置の製造方法 |
JP5292263B2 (ja) * | 2008-12-05 | 2013-09-18 | 株式会社半導体エネルギー研究所 | 成膜方法及び発光素子の作製方法 |
JP2010192826A (ja) * | 2009-02-20 | 2010-09-02 | Sony Corp | ドナー基板および表示装置の製造方法 |
KR101570535B1 (ko) * | 2009-05-12 | 2015-11-20 | 엘지디스플레이 주식회사 | 유기발광다이오드 표시장치의 제조방법 |
KR101245220B1 (ko) | 2009-11-06 | 2013-03-19 | 엘지디스플레이 주식회사 | 유기발광다이오드 표시장치의 제조방법 |
JP5003826B2 (ja) * | 2009-12-03 | 2012-08-15 | 東レ株式会社 | ドナー基板、パターニング方法およびデバイスの製造方法 |
KR101193185B1 (ko) * | 2009-12-29 | 2012-10-19 | 삼성디스플레이 주식회사 | 패턴 형성 방법 및 유기 발광 소자의 제조방법 |
JP5444096B2 (ja) | 2010-04-13 | 2014-03-19 | 株式会社野村総合研究所 | 情報分析装置 |
KR101368158B1 (ko) | 2010-10-21 | 2014-03-03 | 엘지디스플레이 주식회사 | 유기발광 다이오드 표시장치 및 그 제조방법 |
JP5515025B2 (ja) | 2011-10-06 | 2014-06-11 | 株式会社ブイ・テクノロジー | マスク、それに使用するマスク用部材、マスクの製造方法及び有機el表示用基板の製造方法 |
JP6194493B2 (ja) * | 2012-03-30 | 2017-09-13 | 株式会社ブイ・テクノロジー | 薄膜パターン形成方法 |
-
2015
- 2015-08-06 JP JP2015156081A patent/JP6642999B2/ja not_active Expired - Fee Related
-
2016
- 2016-07-08 WO PCT/JP2016/070217 patent/WO2017022404A1/ja active Application Filing
- 2016-07-08 KR KR1020177037378A patent/KR20180038419A/ko unknown
- 2016-07-08 US US15/747,816 patent/US10276836B2/en not_active Expired - Fee Related
- 2016-07-08 CN CN201680037703.9A patent/CN107710877B/zh not_active Expired - Fee Related
- 2016-08-02 TW TW105124435A patent/TWI698155B/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
WO2017022404A1 (ja) | 2017-02-09 |
TW201707511A (zh) | 2017-02-16 |
CN107710877A (zh) | 2018-02-16 |
US20180233706A1 (en) | 2018-08-16 |
KR20180038419A (ko) | 2018-04-16 |
CN107710877B (zh) | 2019-06-11 |
TWI698155B (zh) | 2020-07-01 |
US10276836B2 (en) | 2019-04-30 |
JP2017033903A (ja) | 2017-02-09 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US20050196893A1 (en) | Method of fabricating organic light emitting display | |
US8227816B2 (en) | Organic light emitting display device | |
JP2005235741A (ja) | 有機電界発光表示装置及びその製造方法 | |
US20170018742A1 (en) | Method of manufacturing a stacked organic light emitting diode, stacked oled device, and apparatus for manufacturing thereof | |
US10797258B2 (en) | System and method for matching electrode resistances in OLED light panels | |
KR101794293B1 (ko) | 유기 발광 다이오드 제조 방법 | |
JP2016111016A (ja) | Oledの作製方法 | |
JP6642999B2 (ja) | 有機el素子の製造方法 | |
US11462599B2 (en) | Display panel with a thermal insulation layer, manufacturing method thereof, and display apparatus | |
US20090186148A1 (en) | Method of fabricating organic light emitting device | |
US9825243B2 (en) | Methods for fabricating OLEDs on non-uniform substrates and devices made therefrom | |
US9484546B2 (en) | OLED with compact contact design and self-aligned insulators | |
US9412947B2 (en) | OLED fabrication using laser transfer | |
US9125256B2 (en) | Illumination device | |
US20160133841A1 (en) | Method of manufacturing organic light emitting diode display | |
JP2023060678A (ja) | メタルグリッド透明電極を用いた有機エレクトロルミネッセンス素子 | |
WO2016019650A1 (zh) | 制备有机发光器件的方法、制备有机发光显示面板的方法 | |
KR20130057279A (ko) | 유기박막 전사장치와 이를 이용한 유기박막 전사방법 | |
JP2014089901A (ja) | 有機el素子 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20160601 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20180522 |
|
RD02 | Notification of acceptance of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7422 Effective date: 20180522 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20190604 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20190703 |
|
RD04 | Notification of resignation of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7424 Effective date: 20190926 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20191224 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20200106 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6642999 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
LAPS | Cancellation because of no payment of annual fees |