TWI303467B - Serially-connected organic light emitting device and method of manufacturing the same - Google Patents
Serially-connected organic light emitting device and method of manufacturing the same Download PDFInfo
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Description
•1303467 •九、發明說明： - 【發明所屬之技術領域】 ， 本發明係有關一種串聯式有機發光元件、其面板及其 形成方法，更特別有關一種雷射製程應用於圖案化上述元 件之連接層。 【先前技#f】 自1987年起，有機電激發光元件或聚合物電激發光 元件（organic electroluminescent devices or polymer Φ electroluminescent devices)被開發後，便引起業界的注 意。由於有機電激發光元件具有高亮度、輕薄、自發光、 低消耗功率、不需背光源、無視角限制、製程簡易、及高 反應速率寻優良特性’已被視為平面顯示器的明日之星。 電激發光的原理為一有機半導體薄膜元件，在外加電 場作用下’電子與電洞分別由陰極與陽極注入，並在此元 件中進行傳遞’當電子、電洞在發光層相遇後，電子及電 洞再結合（recombination)形成一激發子（exciton)，激發子 φ 在電場作用下將能量傳遞給發光分子，發光分子便將能量 以光的形式釋放出來。一般簡單的元件結構為在陽極 (indium tin oxide ;簡稱ITO)上蒸鍍電洞傳輸層 (hole-transporting layer)，接著蒸鍍發光層（emitting layer) ’ 再条鐘電子傳輸層（electron-transporting layer)，最 後於電子傳輸層上条鑛電極做為陰極。也有^一些多層結構 元件，是將適當的有機材料蒸鍍於陽極與電洞傳輸材料之 間當作電洞注入層（hole-injection layer)或是在陰極與電 子傳輸材料之間當作電子注入層（electron-inj ection layer)• 1303467 • Nine, invention description: - [Technical field of the invention], the present invention relates to a tandem organic light-emitting element, a panel thereof and a method of forming the same, and more particularly to a laser process for patterning the connection of the above components Floor. [Previous technology #f] Since 1987, organic electroluminescent devices or polymer Φ electroluminescent devices have been developed, which has drawn attention from the industry. Since the organic electroluminescent device has high brightness, light weight, self-illumination, low power consumption, no backlight, no viewing angle limitation, simple process, and high reaction rate, it has been regarded as the future star of flat panel displays. The principle of electroluminescence is an organic semiconductor thin film element. Under the action of an external electric field, 'electrons and holes are injected from the cathode and the anode respectively, and are transmitted in this element.' When electrons and holes meet at the luminescent layer, electrons and The cavity recombination forms an exciton, and the exciton φ transmits energy to the luminescent molecule under the action of an electric field, and the luminescent molecule releases the energy in the form of light. A generally simple component structure is to vapor-deposit a hole-transporting layer on an indium tin oxide (ITO), followed by evaporation of an emission layer' electron-transporting layer. Layer), and finally the strip electrode on the electron transport layer serves as a cathode. There are also some multilayer structural elements that are used to evaporate a suitable organic material between the anode and the hole transport material as a hole-injection layer or as an electron injection between the cathode and the electron transport material. Electron-injection layer
Client’s Docket No.:AU0510029 ^ TT*s Docket No:0632-A50670-TW/fmal/hsuhuche 1303467 或是在發光層與電子傳輸材料之間當作電洞阻擋層 . (hole-blocking layer)，藉以提高載子注入效率，進而達到 降低驅動電廢或增加載子再結合機率等目的。 串聯式的OLED，顧名思義即為將一連串複數個 0LED以串聯方式連接在一起，每一個OLED單元間以連 接層連結。為了使串聯式的0LED效能增高，連結層必須 同時具備有傳遞電子至電子傳輸層及傳遞電洞至電洞傳 輸層之能力，通常來說，連結層需同時具備高光學穿透度 及高載子傳遞速率兩個條件以確保串聯式OLED發揮其 • 預期功效。 連接層可為摻雜有機層，其中，該有機層需包含至少 一個N型摻雜有機層或P型摻雜有機層或其組合，當N 型摻雜有機層及P型摻雜有機層相連結在一起時，會因形 • 成P-N junction而有更大之效益。N型摻雜有機層代表該 有機層在受摻雜後可具有半導體之特性，且主要作用為傳 遞電子；P型摻雜有機層代表該有機層在受摻雜後可具有 半導體之特性，且主要作用為傳遞電洞。 _ 串聯式OLED之操作穩定性有相當大的程度是取決 於連接層之安定性，操作電壓也會視連接層是否能提供足 夠之電子、電洞注入能力而有所變動。當兩種不同之物質 之位置非常接近時，有可能因溫度或電場的關係而產生擴 散的情況進而使介面模糊，當我們利用N型摻雜或P型 摻雜來製作串聯式OLED時，連接層之注入能力就有可能 因相互擴散現象而減弱，尤其是串聯式OLED之操作電場 又較一般OLED結構高，因此更可能發生此一現象。 另外，串聯式OLED之連接層亦可為高功函數（高於Client's Docket No.: AU0510029 ^ TT*s Docket No:0632-A50670-TW/fmal/hsuhuche 1303467 Or as a hole-blocking layer between the light-emitting layer and the electron transporting material. The carrier injection efficiency, in order to achieve the purpose of reducing the drive electric waste or increasing the carrier recombination probability. Tandem OLEDs, as the name implies, connect a series of multiple LEDs in series, with each OLED unit connected by a connection layer. In order to increase the efficiency of the series OLED, the bonding layer must have the ability to transfer electrons to the electron transport layer and transfer holes to the hole transport layer. Generally, the link layer needs to have high optical transmittance and high load at the same time. The sub-transport rate is conditional to ensure that the tandem OLED performs its intended function. The connection layer may be a doped organic layer, wherein the organic layer needs to include at least one N-type doped organic layer or P-type doped organic layer or a combination thereof, when the N-type doped organic layer and the P-type doped organic layer phase When connected together, it will have greater benefits due to the shape of the PN junction. The N-type doped organic layer represents that the organic layer may have semiconductor characteristics after being doped, and mainly functions to transfer electrons; the P-type doped organic layer represents that the organic layer may have semiconductor characteristics after being doped, and The main role is to transmit holes. _ The operational stability of tandem OLEDs is quite large depending on the stability of the connection layer. The operating voltage also varies depending on whether the connection layer can provide sufficient electron and hole injection capability. When the positions of two different substances are very close, there is a possibility of diffusion due to temperature or electric field, and then the interface is blurred. When we use N-type doping or P-type doping to make a series OLED, the connection is made. The injection capability of the layer may be weakened by the phenomenon of mutual diffusion. In particular, the operating electric field of the tandem OLED is higher than that of the general OLED structure, so this phenomenon is more likely to occur. In addition, the connection layer of the tandem OLED can also be a high work function (higher than
Client，s Docket No.:AU0510029 TT5s Docket No:0632-A50670-TW/flnal/hsuhuche 6 1303467 4eV)之金屬或金屬化合物，其電阻高於lOOkncU.S. Ser. 〜 No. 10/857,516提供形成連接層之材質，可有效增加串聯 式OLED之穩定性。由於連接層之電阻較有機材料低，載 子可輕易地注入，但其亦會導致晝素間之串音 (crosstalk)。為避免串音，必需將鄰側晝素間之橫向電 流降低至驅動畫素所需電流之10%，而連接層之橫向電 阻至少為串聯電阻之8倍。常見OLED之靜態電阻約為數 千歐姆，而串聯式OLED之電阻約為1萬至數萬歐姆，因 此連接層之橫向電阻必需高於10萬歐姆。由於面電阻決 ❿ 定於材料性質及膜厚，當金屬作為連接層時，必須將金屬 的厚度降至非常薄以提高其電阻，但太薄之連接層易導致 再現性不佳。另一種方式係以圖案化之方式將不同晝素間 • 之連接層阻斷，而現有之圖案化製程需依賴蔭罩（shadow * mask)。由於重量的關係，大尺寸的隆罩於蒸鍛時將彎曲 並產生對準等問題，因此無法應用於大尺寸面板製程中。 【發明内容】 為克服上述問題，本發明提供一種串聯式有機發光元 ® 件之形成方法，係以雷射製程圖案化連接層，包括提供一 基板；於該基板上依序形成一陽極、第一有機發光單元、 一連接層、第二有機發光單元、及一陰極；以及以一雷射 製程，圖案化該連接層。 本發明亦提供一種串聯式有機發光元件，包括一對電 極，位於一基板上；一對有機發光單元，夹設於該對電極 之間；一圖案化連接層，夾設於該對有機發光單元間，以 電性連接該對有機發光單元；及複數絕緣殘餘物，位於該Client, s Docket No.: AU0510029 TT5s Docket No: 0632-A50670-TW/flnal/hsuhuche 6 1303467 4eV) A metal or metal compound with a resistance higher than lOOkncU.S. Ser. ~ No. 10/857,516 provides a connection The material of the layer can effectively increase the stability of the tandem OLED. Since the resistance of the connection layer is lower than that of the organic material, the carrier can be easily injected, but it also causes crosstalk between the elements. To avoid crosstalk, it is necessary to reduce the lateral current between adjacent pixels to 10% of the current required to drive the pixels, and the lateral resistance of the connection layer is at least 8 times the series resistance. The static resistance of a typical OLED is about several thousand ohms, while the resistance of a series OLED is about 10,000 to tens of thousands of ohms, so the lateral resistance of the connection layer must be higher than 100,000 ohms. Since the sheet resistance is determined by the nature of the material and the film thickness, when the metal is used as a connecting layer, the thickness of the metal must be reduced to a very thin thickness to increase its electrical resistance, but a too thin connecting layer is liable to cause poor reproducibility. Another way is to block the connection layer between different elements in a patterned manner, and the existing patterning process relies on a shadow * mask. Due to the weight, the large-sized hood will be bent and cause alignment problems during steaming, and thus cannot be applied to a large-sized panel process. SUMMARY OF THE INVENTION In order to overcome the above problems, the present invention provides a method for forming a tandem organic light-emitting element® by patterning a connection layer by a laser process, including providing a substrate; forming an anode on the substrate in sequence An organic light emitting unit, a connecting layer, a second organic light emitting unit, and a cathode; and patterning the connecting layer in a laser process. The invention also provides a tandem organic light emitting device, comprising a pair of electrodes on a substrate; a pair of organic light emitting units sandwiched between the pair of electrodes; and a patterned connecting layer sandwiched between the pair of organic light emitting units Electrically connecting the pair of organic light-emitting units; and a plurality of insulating residues, located
Client’s Docket No.:AU0510029 TT5s Docket No:0632-A50670-TW/fmal/hsuhuche 7 •1303467 圖案化連接層之周圍。 - 本發明更提供一種面板之形成方法，包括提供一面板 半成品，該面板半成品包括一基板、一對電極，位於該基 板上、一對發光單元，位於該對電極之間、及一連接層， 位於該對發光單元之間；以及提供一能量於該面板半成 — 品，以圖案化該連接層而形成一圖案化連接層，使得該圖 案化連接層之周圍具有複數絕緣殘餘物。 【實施方式】 Φ 如第1圖所示，係本發明以雷射製程圖案化串聯式有 機發光元件之連接層的示意圖。首先提供一基板10，基 板之材質一般為玻璃等無機材質，亦可為塑膠、橡膠、聚 • 酯、或聚碳酸酯等可撓性材質。接著於基板10上形成透 . 明導電層，較佳為銦錫氧化物、銦鋅氧化物、鋁鋅氧化物 或上述材質之組合，其厚度約介於500-2000埃，其形成 方式為蒸鍍或濺鍍。接著圖案化透明導電層，移除非晝素 區II之透明導電層，保留晝素區I之透明導電層以作為 陽極11。值得注意的是，本案之OLED可為主動式或被動 ® 式之OLED，因此形成透明電極之前亦可形成驅動電路或 主動元件，如薄膜電晶體。 接著形成發光單元12A，其結構及組成將詳述於後。 在此步驟後，毯覆性地形成一連接層（未圖示）於有機發光 單元12 A上，其材質可為無機導電物如化經、銘、或上 述之組合。連接層之厚度較佳介於50-5QQ埃。值得一提 的是，習知技藝為了提高連接層的橫向電阻，通常應用蔭 罩以形成圖案化的連接層。但本發明較佳實施例中，並不Client’s Docket No.: AU0510029 TT5s Docket No: 0632-A50670-TW/fmal/hsuhuche 7 • 1303467 Around the patterned connection layer. The present invention further provides a method for forming a panel, comprising providing a panel semi-finished product, the panel semi-finished product comprising a substrate, a pair of electrodes, a pair of light emitting units located on the substrate, between the pair of electrodes, and a connecting layer. Located between the pair of light emitting units; and providing an energy to the panel semi-finished product to pattern the connecting layer to form a patterned connecting layer such that the patterned connecting layer has a plurality of insulating residues around the patterned connecting layer. [Embodiment] Φ As shown in Fig. 1, a schematic diagram of a connection layer for patterning a tandem organic light-emitting element in a laser process according to the present invention is shown. First, a substrate 10 is provided. The material of the substrate is generally an inorganic material such as glass, and may be a flexible material such as plastic, rubber, polyester, or polycarbonate. Then, a transparent conductive layer is formed on the substrate 10, preferably indium tin oxide, indium zinc oxide, aluminum zinc oxide or a combination of the above materials, and the thickness thereof is about 500-2000 angstroms, and the formation method is steaming. Plating or sputtering. Next, the transparent conductive layer is patterned to remove the transparent conductive layer of the non-alkali region II, and the transparent conductive layer of the halogen region I is retained as the anode 11. It is worth noting that the OLED of this case can be an active or passive ® type OLED, so that a driving circuit or an active component such as a thin film transistor can be formed before forming a transparent electrode. Next, the light-emitting unit 12A is formed, the structure and composition of which will be described later. After this step, a connection layer (not shown) is formed on the organic light-emitting unit 12 A in a blanket manner, and the material thereof may be an inorganic conductive material such as a chemical, a combination, or a combination thereof. The thickness of the tie layer is preferably between 50 and 5 QQ. It is worth mentioning that in order to increase the lateral resistance of the connecting layer, conventional masks are often used to form a patterned connecting layer. However, in the preferred embodiment of the invention,
Client’s Docket No.:AU0510029 TVs Docket No:0632-A50670-TW/fmal/hsuhuche 8 • 1303467 1 需在此時圖案化連接層，因此不需額外的蔭罩，同時也避 . 免大尺寸面板常出現因蔭罩之重力彎曲所導致的對準問 _ 題。此外，也可省略將蔭罩插入蒸鍍腔之製程整合步驟。 在形成上述連接層後，形成有機發光單元12B於連接 層上，其結構與組成與有機發光單元12A同樣詳述於後。 接著以蒸鍍或濺鍍法形成約介於500-2000埃之導電層 (例如無機導電層）於上述結構上作為陰極14，其組成可 為無機導電物如氣化鋰、紹、或上述之組合。至此，已完 成一面板半成品，在基板上依序形成有對電極11、14、 ❿ 對發光單元12A、12B，位於該對電極11與14之間、以 及連接層13A，位於對發光單元12A與12B之間。 最後為本發明之關鍵步驟，以雷射15圖案化該連接 _ 層，此圖案化步驟可不需於真空環境操作。圖案化之方式 • 包括單束雷射燒結部份連接層，以形成至少一絕緣殘餘物 13B於非晝素區II，換句話說，即形成至少一絕緣殘餘物 13B位於該圖案化連接層13A之周圍，並保留原來的連接 層13A於晝素區I。較佳實施例中，為提高雷射製程圖案 $ 化的速度，可將單束雷射並排形成如第2圖所示之並排雷 射21，將光罩22對準欲圖案化之元件23後，以固定或 非固定速率移動並排雷射21，達成圖案化的效果。配合 第1圖可清楚明白，雷射自基板10穿入，可燒穿部份有 機發光單元12A及連接層，也可能燒結部份之有機發光單 元12B，但以不燒穿陰極14為原則。為達成上述燒穿距 離的控制，雷射種類較佳為氬雷射（Argon laser)、染料 雷射（dye laser)、氦氖雷射（He-Ne laser)、氬-染料雷 射（Argon-dye laser)、或紅寶石雷射（Ruby laser)等，Client's Docket No.: AU0510029 TVs Docket No:0632-A50670-TW/fmal/hsuhuche 8 • 1303467 1 The connection layer needs to be patterned at this time, so no additional shadow mask is needed, and it is also avoided. The alignment problem caused by the gravity bending of the shadow mask. In addition, the process integration step of inserting the shadow mask into the vapor deposition chamber may also be omitted. After the above-described connection layer is formed, the organic light-emitting unit 12B is formed on the connection layer, and its structure and composition are as detailed later with the organic light-emitting unit 12A. Then, a conductive layer (for example, an inorganic conductive layer) of about 500-2000 angstroms is formed by vapor deposition or sputtering to form a cathode 14 on the above structure, and the composition thereof may be an inorganic conductive material such as lithium hydride, or the above. combination. So far, a panel semi-finished product has been completed, and the counter electrodes 11, 14 and the pair of light-emitting units 12A, 12B are sequentially formed on the substrate, between the pair of electrodes 11 and 14, and the connection layer 13A, which is located at the pair of light-emitting units 12A and Between 12B. Finally, a key step of the invention is to pattern the connection layer with a laser 15, which can be operated without a vacuum environment. Patterning method: comprising a single beam of laser sintered partial connection layer to form at least one insulating residue 13B in the non-alkaline region II, in other words, at least one insulating residue 13B is formed in the patterned connection layer 13A Around it, and retain the original connecting layer 13A in the halogen area I. In a preferred embodiment, in order to increase the speed of the laser process pattern, a single beam of laser light may be formed side by side to form a side-by-side laser 21 as shown in FIG. 2, and the mask 22 is aligned with the component 23 to be patterned. Move the side-by-side laser 21 at a fixed or non-fixed rate to achieve a patterned effect. As can be clearly seen from Fig. 1, the laser penetrates from the substrate 10 to burn through some of the organic light-emitting units 12A and the connection layer, and may also sinter the portion of the organic light-emitting unit 12B, but does not burn through the cathode 14. In order to achieve the above-mentioned control of the burn-through distance, the laser type is preferably an Argon laser, a dye laser, a He-Ne laser, or an Argon-dye laser (Argon- Dye laser), or ruby laser, etc.
Clients Docket No.: AU0510029 TT5s Docket No:0632-A50670-TW/final/hsuhuche 9 1303467 不介於4〇0〜8〇〇nm，較佳功率約介於300-800瓦， 13結構所需之雷射種類、波長或功率視需求而可 凋整，並不侷限於上述種類。Clients Docket No.: AU0510029 TT5s Docket No:0632-A50670-TW/final/hsuhuche 9 1303467 Not between 4〇0~8〇〇nm, better power is about 300-800W, 13 thunder required for structure The type, wavelength, or power of the shot may be reduced as needed, and is not limited to the above categories.
々口黛 Q ΠΑ A — 8D圖所示之電子顯微鏡圖，係顯示連接層 處理、，^界區域。第8A圖中之連接層13A未經雷射製程 因此並無產生所謂的絕緣殘餘物13B。第8B-8D係 亡二射製程處理，但8B雖產生鋸齒狀交界8〇，但過低的 :里（1〇瓦）未能將不同晝素區I之間的連接層13A阻斷， 因此無法產生預期之效果，如後所述。而第8C圖（100 瓦）及8D圖（4〇〇瓦）中，由於不同晝素區I之連接層ι3Α 之間已被而電阻之絕緣殘餘物1阻斷，因此不同晝素區 1 ^連接層13A之間的橫向電阻大於100000歐姆，可避 免橫向，電帶來的串音（crosstalk)並提高顯示品質。 如第3圖所示，為本發明較佳實施例中發光單元 12A 12B之详細結構。1〇為前述之基板、η為前述之陽々口黛 Q ΠΑ A — The electron microscope image shown in Fig. 8D shows the connection layer treatment and the boundary area. The connection layer 13A in Fig. 8A is not subjected to a laser process, so that no so-called insulating residue 13B is produced. 8B-8D is a two-shot process, but 8B produces a jagged junction of 8〇, but too low: 1 (W) does not block the connection layer 13A between different halogen regions I, so Unable to produce the desired effect, as described later. In the 8C (100 watts) and 8D (4 watts), since the insulating layer 1 of the different halogen regions I has been blocked by the insulating residue 1 of the resistor, the different pixel regions 1 ^ The lateral resistance between the connection layers 13A is greater than 100,000 ohms, which avoids lateral, electrical crosstalk and improves display quality. As shown in Fig. 3, the detailed structure of the light-emitting unit 12A 12B in the preferred embodiment of the present invention. 1〇 is the aforementioned substrate, η is the aforementioned yang
極、13A、為前述之連接層、14為前述之陰極，其厚度、組 成、形成方法均已詳述於前，在此不再重複。而33A—36A 2 33B.即前述之有機發光單元12Α、ΐ2β。有機發光 單元具有發光層35A、35B，其厚度約介於2〇〇—6〇〇埃， 包括主體材料以及客體材料如磷光摻雜材料。主體材料可 為不對稱之鋁錯合物（如BAlq，雙（2〜甲基—8 —羥基喹啉一 氮1，氧8)-(1，Γ -聯苯-氧4)-鋁鹽或8—(羥基喹啉）—（4— 苯基苯紛）紹鹽）、或味嗤化合物。磷光摻雜材料可為Ir 錯合物或Pt錯合物。連接層37與陽極32或陰極38之間 的發光單元除了發光層35A、35B以外，還可視需要夾設 其他層如電洞注入層33A、33B;電洞傳輪層μα、34B·電The poles, 13A, the aforementioned connecting layer, and 14 are the aforementioned cathodes, and the thickness, composition, and formation method thereof have been described in detail above and will not be repeated here. And 33A-36A 2 33B. That is, the aforementioned organic light-emitting units 12Α, ΐ2β. The organic light-emitting unit has light-emitting layers 35A, 35B having a thickness of about 2 - 6 angstroms, including a host material and a guest material such as a phosphorescent dopant material. The host material may be an asymmetric aluminum complex (such as BAlq, bis(2~methyl-8-hydroxyquinoline-nitrogen 1, oxygen 8)-(1, fluorene-biphenyl-oxygen 4)-aluminum or 8-(hydroxyquinoline)-(4-phenylbenzene) salt or a miso compound. The phosphorescent dopant material can be an Ir complex or a Pt complex. The light-emitting unit between the connection layer 37 and the anode 32 or the cathode 38 may be provided with other layers such as the hole injection layers 33A and 33B in addition to the light-emitting layers 35A and 35B; the hole-passing layer μα, 34B·electricity
Client’s Docket No.:AU0510029 TT5s Docket No:0632-A50670-TW/final/hsuhuche 10 1303467 子傳輸層36A、36B;電子注入層（未圖示）。電洞注入層 33A、33B之厚度約介於500-2000埃，其可為氟碳氫聚合 物、紫質（porphyrin)衍生物或摻雜p-型摻質的氨 (p-doped amine)衍生物，而紫質衍生物可為酜菁金屬 (metallophthalo-cyanine)衍生物，例如酞菁銅（copper phthalocyanine)。電洞傳輸層34A、34B可為胺聚合物如 NPB、TPD、2T-NATA或其衍生物，其厚度較佳介於50〜500 埃。電子注入層（未圖示）可為驗金屬鹵化物、驗土金屬鹵 化物、鹼金屬氧化物或金屬碳酸化合物，例如為敗化鋰 (LiF)、氟化鉋（CsF)、氟化鈉（NaF)、氟化鈣（CaF2)、氧 化鋰（Li2〇)、氧化鉋（Cs2〇)、氧化鈉（Na2〇)、碳酸鋰 (Li2C〇3)、碳酸絶（CS2CO3)或碳酸納（Na2C〇3) ’其厚度較佳 介於5-50埃。值得注意的是，上述結構僅說明有機發光 單元之較佳結構，本發明並不以此為限，熟悉本技藝人士 自可依需要添加其他層如電洞阻擋層（hole blocking layer)等。可以理解的是，本案之有機發光單元在最簡化 的情況下可以只包括一層發光層。 第4-7圖係不同功率雷射製程之數據比較。當雷射製 程完全燒穿連接層產生絕緣殘餘物後，才能達到串聯的效 果。第4、5圖中，當雷射製程的功率只有10瓦時，元件 表現與沒有經雷射處理之元件類似。而經400瓦或500瓦 雷射製程處理後之元件，需要較高之驅動電壓達到一樣的 電流密度或亮度，註明其為串聯。 第6圖中，在一樣的亮度下，經400瓦或500瓦雷射 製程處理後之元件其發光效率明顯較高。第7圖為色度座 標圖（CIE)，經400瓦或500瓦雷射製程處理後之元件，Client's Docket No.: AU0510029 TT5s Docket No: 0632-A50670-TW/final/hsuhuche 10 1303467 Sub-transport layers 36A, 36B; electron injection layer (not shown). The hole injection layers 33A, 33B have a thickness of about 500-2000 angstroms, which may be a fluorohydrocarbon polymer, a porphyrin derivative, or a p-doped amine-derived derivative. And the purpura derivative may be a metallophthalo-cyanine derivative such as copper phthalocyanine. The hole transport layers 34A, 34B may be amine polymers such as NPB, TPD, 2T-NATA or derivatives thereof, preferably having a thickness of from 50 to 500 angstroms. The electron injecting layer (not shown) may be a metal halide, a soil metal halide, an alkali metal oxide or a metal carbonate such as Lithium (LiF), Fluoride (CsF) or sodium fluoride ( NaF), calcium fluoride (CaF2), lithium oxide (Li2〇), oxidized planer (Cs2〇), sodium oxide (Na2〇), lithium carbonate (Li2C〇3), carbonic acid (CS2CO3) or sodium carbonate (Na2C〇) 3) 'The thickness is preferably between 5 and 50 angstroms. It should be noted that the above structure only illustrates the preferred structure of the organic light-emitting unit, and the present invention is not limited thereto. Those skilled in the art can add other layers such as a hole blocking layer and the like as needed. It can be understood that the organic light-emitting unit of the present invention can include only one light-emitting layer in the most simplified case. Figures 4-7 show data comparisons for different power laser processes. The tandem effect can only be achieved when the laser process completely burns through the tie layer to create insulation residues. In Figures 4 and 5, when the power of the laser process is only 10 watts, the component performance is similar to that of the component without laser processing. Components processed after a 400 watt or 500 watt laser process require a higher drive voltage to achieve the same current density or brightness, indicating that they are in series. In Fig. 6, the components with a 400 watt or 500 watt laser process have a significantly higher luminous efficiency at the same brightness. Figure 7 is the chromaticity coordinate map (CIE), which is processed by a 400 watt or 500 watt laser process.
Client’s Docket N〇.:AU0510029 TT5s Docket No:0632-A50670-TW/fmal/hsuhuche 11 1303467 由於連接層兩邊之有機發光單元因串聯而都發光並產生 干涉，使元件產生色偏移。這表示可藉由調整發光單元的 厚度，使發光偏移至想要的顏色。 本發明已提供串聯式有機發光元件中，圖案化連接層 的方法。雖然本發明已以數個較佳實施例揭露如上’然其 並非用以限定本發明，任何熟習此技藝者，在不脫離本發 明之精神和範圍内，當可作任意之更動與潤飾，因此本發 明之保護範圍當視後附之申請專利範圍所界定者為準。Client's Docket N〇.: AU0510029 TT5s Docket No: 0632-A50670-TW/fmal/hsuhuche 11 1303467 Since the organic light-emitting units on both sides of the connection layer emit light due to the series connection and cause interference, the components are shifted in color. This means that the illumination can be shifted to the desired color by adjusting the thickness of the illumination unit. The present invention has provided a method of patterning a connection layer in a tandem organic light-emitting element. The present invention has been described in terms of several preferred embodiments as described above, but it is not intended to limit the invention, and any one skilled in the art can make any changes and refinements without departing from the spirit and scope of the invention. The scope of the invention is defined by the scope of the appended claims.
Client’s Docket No.:AU0510029 12 TT5s Docket No:0632-A50670-TW/final/hsuhuche ' 1303467 【圖式簡單說明】 顯示本發明串聯式有機發光元件 顯示本發明—較佳實施例之雷射 第1圖係一剖面圖 • 之形成方法； 第2圖係一示意圖Client's Docket No.: AU0510029 12 TT5s Docket No: 0632-A50670-TW/final/hsuhuche ' 1303467 [Simplified Schematic] Displaying the tandem organic light-emitting element of the present invention shows the laser of the present invention - the preferred embodiment a method of forming a cross-sectional view; Figure 2 is a schematic view
苐8A-8D圖係電子顯料於日” _ 例中，以不同功率之+二片’iM示本發明較佳實施 旱之雷射製程圖案化連接層後形成之交界 【主要元件符號說明】苐8A-8D diagram electronic display in the day _ example, with different power + two pieces 'iM shows the preferred implementation of the invention. The boundary formed by the patterning connection layer of the dry laser process [Description of main components]
I〜晝素區； 10〜基板； 12A、12B〜有機發光單元; 13 A〜連接層； 14〜陰極； 21〜並排雷射； 23〜欲圖案化之元件； 33A、33B〜電洞注入層； 35A、35B〜發光層； 80〜13A及13B之交界。 II〜非晝素區； 11〜陽極； 13B〜絕緣殘餘物； 15〜雷射； 22〜光罩； 38〜陰極； MA、MB〜電洞傳輪層· 36A、36B〜電子傳輪層;I ~ halogen region; 10 ~ substrate; 12A, 12B ~ organic light-emitting unit; 13 A ~ connecting layer; 14 ~ cathode; 21 ~ side-by-side laser; 23 ~ element to be patterned; 33A, 33B ~ hole injection layer 35A, 35B~ luminescent layer; the junction of 80~13A and 13B. II~ non-alkaline region; 11~anode; 13B~insulating residue; 15~laser; 22~mask; 38~cathode; MA, MB~ hole transmission layer · 36A, 36B~ electron transfer layer;
Client’s Docket No.:AU0510029 TT?s Docket No:0632-A50670-TW/fmal/hsuhuche 13Client’s Docket No.: AU0510029 TT?s Docket No:0632-A50670-TW/fmal/hsuhuche 13
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