JP2010034007A - 転写シートおよび転写シートの形成方法 - Google Patents
転写シートおよび転写シートの形成方法 Download PDFInfo
- Publication number
- JP2010034007A JP2010034007A JP2008197709A JP2008197709A JP2010034007A JP 2010034007 A JP2010034007 A JP 2010034007A JP 2008197709 A JP2008197709 A JP 2008197709A JP 2008197709 A JP2008197709 A JP 2008197709A JP 2010034007 A JP2010034007 A JP 2010034007A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- transfer
- transfer sheet
- passive
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims description 33
- 238000013518 transcription Methods 0.000 title abstract 8
- 230000035897 transcription Effects 0.000 title abstract 8
- 239000000758 substrate Substances 0.000 claims abstract description 38
- 238000006243 chemical reaction Methods 0.000 claims abstract description 32
- 239000007769 metal material Substances 0.000 claims abstract description 27
- 239000011368 organic material Substances 0.000 claims abstract description 14
- 230000001590 oxidative effect Effects 0.000 claims abstract description 5
- 229910052751 metal Inorganic materials 0.000 claims description 27
- 239000002184 metal Substances 0.000 claims description 27
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 8
- 229910052782 aluminium Inorganic materials 0.000 claims description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 8
- 239000011651 chromium Substances 0.000 claims description 8
- 239000001301 oxygen Substances 0.000 claims description 8
- 229910052760 oxygen Inorganic materials 0.000 claims description 8
- 238000004140 cleaning Methods 0.000 claims description 7
- 229910052804 chromium Inorganic materials 0.000 claims description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 238000003860 storage Methods 0.000 abstract description 9
- 238000002161 passivation Methods 0.000 abstract description 4
- 239000010410 layer Substances 0.000 description 159
- 239000012044 organic layer Substances 0.000 description 20
- 239000010408 film Substances 0.000 description 19
- 239000000463 material Substances 0.000 description 11
- 230000015572 biosynthetic process Effects 0.000 description 10
- 230000005525 hole transport Effects 0.000 description 7
- 230000000052 comparative effect Effects 0.000 description 4
- 238000007740 vapor deposition Methods 0.000 description 4
- 239000011521 glass Substances 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- OBAJPWYDYFEBTF-UHFFFAOYSA-N 2-tert-butyl-9,10-dinaphthalen-2-ylanthracene Chemical compound C1=CC=CC2=CC(C3=C4C=CC=CC4=C(C=4C=C5C=CC=CC5=CC=4)C4=CC=C(C=C43)C(C)(C)C)=CC=C21 OBAJPWYDYFEBTF-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical compound C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 238000010301 surface-oxidation reaction Methods 0.000 description 2
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical group [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 2
- 125000001637 1-naphthyl group Chemical group [H]C1=C([H])C([H])=C2C(*)=C([H])C([H])=C([H])C2=C1[H] 0.000 description 1
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 235000010290 biphenyl Nutrition 0.000 description 1
- 239000004305 biphenyl Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Chemical compound [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000004064 recycling Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000010955 robust manufacturing process Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 229910001256 stainless steel alloy Inorganic materials 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41M—PRINTING, DUPLICATING, MARKING, OR COPYING PROCESSES; COLOUR PRINTING
- B41M5/00—Duplicating or marking methods; Sheet materials for use therein
- B41M5/26—Thermography ; Marking by high energetic means, e.g. laser otherwise than by burning, and characterised by the material used
- B41M5/40—Thermography ; Marking by high energetic means, e.g. laser otherwise than by burning, and characterised by the material used characterised by the base backcoat, intermediate, or covering layers, e.g. for thermal transfer dye-donor or dye-receiver sheets; Heat, radiation filtering or absorbing means or layers; combined with other image registration layers or compositions; Special originals for reproduction by thermography
- B41M5/42—Intermediate, backcoat, or covering layers
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/048—Coating on selected surface areas, e.g. using masks using irradiation by energy or particles
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/18—Deposition of organic active material using non-liquid printing techniques, e.g. thermal transfer printing from a donor sheet
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/40—Thermal treatment, e.g. annealing in the presence of a solvent vapour
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41M—PRINTING, DUPLICATING, MARKING, OR COPYING PROCESSES; COLOUR PRINTING
- B41M2205/00—Printing methods or features related to printing methods; Location or type of the layers
- B41M2205/02—Dye diffusion thermal transfer printing (D2T2)
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41M—PRINTING, DUPLICATING, MARKING, OR COPYING PROCESSES; COLOUR PRINTING
- B41M2205/00—Printing methods or features related to printing methods; Location or type of the layers
- B41M2205/38—Intermediate layers; Layers between substrate and imaging layer
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41M—PRINTING, DUPLICATING, MARKING, OR COPYING PROCESSES; COLOUR PRINTING
- B41M5/00—Duplicating or marking methods; Sheet materials for use therein
- B41M5/26—Thermography ; Marking by high energetic means, e.g. laser otherwise than by burning, and characterised by the material used
- B41M5/40—Thermography ; Marking by high energetic means, e.g. laser otherwise than by burning, and characterised by the material used characterised by the base backcoat, intermediate, or covering layers, e.g. for thermal transfer dye-donor or dye-receiver sheets; Heat, radiation filtering or absorbing means or layers; combined with other image registration layers or compositions; Special originals for reproduction by thermography
- B41M5/42—Intermediate, backcoat, or covering layers
- B41M5/426—Intermediate, backcoat, or covering layers characterised by inorganic compounds, e.g. metals, metal salts, metal complexes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/31504—Composite [nonstructural laminate]
- Y10T428/31678—Of metal
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Optics & Photonics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
【解決手段】支持基板3上に光熱変換層7を介して不動態層11を設けたことを特徴としている。転写対象となる転写層13は、有機材料からなるもので、不動態層11の形成面上に設けられている。不動態層11は、光熱変換層7上に設けた金属材料層9の表面を酸化してなる。
【選択図】図1
Description
図1は、実施形態の転写シートの断面模式図である。この図に示すように、転写シート1は、支持基板3上に、反射防止層5、光熱変換層7、金属材料層9、不動態層11、および転写層13がこの順に積層されてなる。以下、各層の詳細を、支持基板3側から順に説明する。
図2には、以上のような構成の転写シート1を用いた有機電界発光素子の形成を示す断面工程図である。以下、図2に基づいて有機電界発光素子の形成手順を説明する。
図3は、以上のような転写に用いる転写シートの形成手順を、転写シートのリサイクル使用も考慮した形成手順として示したフローチャートである。以下、図3のフローチャートに基づいて図1を参照しつつ、転写シートのリサイクルも含めた形成手順を説明する。
Claims (8)
- 支持基板と、
前記支持基板上に設けられた光熱変換層と、
前記光熱変換層上に設けられた不動態層とを備えた
転写シート。 - 前記不動態層が形成された面上に、有機材料からなる転写層が設けられた
請求項1に記載の転写シート。 - 前記不動態層は、前記光熱変換層上に設けた金属材料層の表面を酸化してなる
請求項1または2に記載の転写シート。 - 前記不動態層は、前記光熱変換層上に設けた金属材料層の表面を酸化してなり、
前記金属材料層は、不動態を形成すると共に水分と酸素の一方または両方と反応する金属を用いて構成された
請求項1〜3の何れか1項に記載の転写シート。 - 前記不動態層は、前記光熱変換層上に設けたアルミニウム(Al)、クロム(Cr)、鉄(Fe)、およびニッケル(Ni)のうちの少なくとも1つを含む金属材料層の表面を酸化してなる
請求項1〜4の何れか1項に記載の転写シート。 - 支持基板上に光熱変換層を形成する工程と、
前記光熱変換層の上部に不動態層を形成する工程とを行う
転写シートの形成方法。 - 前記不動態層が形成された面をプラズマ洗浄処理する工程と、
前記プラズマ洗浄処理した面上に有機材料からなる転写層を形成する工程とを行なう
請求項6に記載の転写シートの形成方法。 - 前記不動態層を形成する工程では、前記光熱変換層上に金属材料層を形成してその表面を酸化して不動態化する
請求項6または7に記載の転写シートの形成方法。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008197709A JP2010034007A (ja) | 2008-07-31 | 2008-07-31 | 転写シートおよび転写シートの形成方法 |
US12/509,122 US8435611B2 (en) | 2008-07-31 | 2009-07-24 | Transfer sheet and method for forming the same |
CN200910160874A CN101640185A (zh) | 2008-07-31 | 2009-07-30 | 转写片及其形成方法 |
US13/420,336 US8697183B2 (en) | 2008-07-31 | 2012-03-14 | Method for forming transfer sheet |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008197709A JP2010034007A (ja) | 2008-07-31 | 2008-07-31 | 転写シートおよび転写シートの形成方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2010034007A true JP2010034007A (ja) | 2010-02-12 |
Family
ID=41608643
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008197709A Pending JP2010034007A (ja) | 2008-07-31 | 2008-07-31 | 転写シートおよび転写シートの形成方法 |
Country Status (3)
Country | Link |
---|---|
US (2) | US8435611B2 (ja) |
JP (1) | JP2010034007A (ja) |
CN (1) | CN101640185A (ja) |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003234185A (ja) * | 2001-12-27 | 2003-08-22 | Eastman Kodak Co | 有機発光ダイオードデバイスの製造方法 |
JP2005019955A (ja) * | 2003-05-30 | 2005-01-20 | Seiko Epson Corp | 薄膜パターンの形成方法及びデバイスの製造方法、電気光学装置及び電子機器 |
JP2005149834A (ja) * | 2003-11-13 | 2005-06-09 | Dainippon Printing Co Ltd | パターニング用基板およびその製造方法 |
JP2005183381A (ja) * | 2003-12-22 | 2005-07-07 | Samsung Sdi Co Ltd | レーザー転写用ドナーフィルム及びそのフィルムを用いて製造される有機電界発光素子 |
JP2007059229A (ja) * | 2005-08-25 | 2007-03-08 | Tokki Corp | 有機elディスプレイの製造方法 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7534498B2 (en) * | 2002-06-03 | 2009-05-19 | 3M Innovative Properties Company | Laminate body, method, and apparatus for manufacturing ultrathin substrate using the laminate body |
US7132140B2 (en) * | 2004-05-27 | 2006-11-07 | Eastman Kodak Company | Plural metallic layers in OLED donor |
KR100667067B1 (ko) * | 2004-09-08 | 2007-01-10 | 삼성에스디아이 주식회사 | 레이저 전사용 도너 기판 및 그 기판을 사용하여 제조되는유기 전계 발광 소자 |
JP2006086069A (ja) * | 2004-09-17 | 2006-03-30 | Three M Innovative Properties Co | 有機エレクトロルミネッセンス素子及びその製造方法 |
US20070083412A1 (en) | 2005-09-23 | 2007-04-12 | Sternaman Elizabeth A | Budgeting requirements model generator |
JP2007173145A (ja) | 2005-12-26 | 2007-07-05 | Sony Corp | 転写用基板、転写方法、および有機電界発光素子の製造方法 |
US8168462B2 (en) * | 2009-06-05 | 2012-05-01 | Applied Materials, Inc. | Passivation process for solar cell fabrication |
-
2008
- 2008-07-31 JP JP2008197709A patent/JP2010034007A/ja active Pending
-
2009
- 2009-07-24 US US12/509,122 patent/US8435611B2/en not_active Expired - Fee Related
- 2009-07-30 CN CN200910160874A patent/CN101640185A/zh active Pending
-
2012
- 2012-03-14 US US13/420,336 patent/US8697183B2/en not_active Expired - Fee Related
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003234185A (ja) * | 2001-12-27 | 2003-08-22 | Eastman Kodak Co | 有機発光ダイオードデバイスの製造方法 |
JP2005019955A (ja) * | 2003-05-30 | 2005-01-20 | Seiko Epson Corp | 薄膜パターンの形成方法及びデバイスの製造方法、電気光学装置及び電子機器 |
JP2005149834A (ja) * | 2003-11-13 | 2005-06-09 | Dainippon Printing Co Ltd | パターニング用基板およびその製造方法 |
JP2005183381A (ja) * | 2003-12-22 | 2005-07-07 | Samsung Sdi Co Ltd | レーザー転写用ドナーフィルム及びそのフィルムを用いて製造される有機電界発光素子 |
JP2007059229A (ja) * | 2005-08-25 | 2007-03-08 | Tokki Corp | 有機elディスプレイの製造方法 |
Also Published As
Publication number | Publication date |
---|---|
CN101640185A (zh) | 2010-02-03 |
US8697183B2 (en) | 2014-04-15 |
US8435611B2 (en) | 2013-05-07 |
US20120168069A1 (en) | 2012-07-05 |
US20100028570A1 (en) | 2010-02-04 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US7691783B2 (en) | Transfer substrate, method for fabricating display device, and display device | |
JP5635737B2 (ja) | 成膜方法 | |
JP4440267B2 (ja) | ナノサイズの半球状凹部が形成された基板を用いた高効率の有機発光素子及びこの作製方法 | |
TWI450989B (zh) | 蒸發裝置之蒸發供體基板,使用該基板之層之製造方法及有機發光二極管顯示器製造之方法 | |
JP5079722B2 (ja) | 発光装置の作製方法 | |
JP4450006B2 (ja) | 転写用基板および有機電界発光素子の製造方法 | |
JP2010153051A (ja) | 転写用基板および表示装置の製造方法 | |
JP2008034280A (ja) | 表示装置の製造方法 | |
JP5996159B2 (ja) | 有機発光ダイオード装置 | |
JP2009211890A (ja) | 有機el表示装置 | |
JP2006196861A (ja) | 有機エレクトロルミネッセンス素子 | |
US20060042747A1 (en) | Lamination apparatus and laser-induced thermal imaging method using the same | |
JP2006062343A (ja) | レーザー転写用ドナー基板及びこれを用いた有機電界発光素子の製造方法 | |
US11462599B2 (en) | Display panel with a thermal insulation layer, manufacturing method thereof, and display apparatus | |
US8665509B2 (en) | Method of bonding metal and glass using optical contact bonding, method of manufacturing display apparatus using the method of bonding, and display apparatus manufactured by the method of bonding | |
JP2010034007A (ja) | 転写シートおよび転写シートの形成方法 | |
KR100784487B1 (ko) | 유기 전계 발광 소자의 전극 형성 방법 및 그를 이용하여제조된 유기 전계 발광 소자 | |
KR102050029B1 (ko) | 도너 기판, 도너 기판의 제조 방법, 유기 발광 표시 장치 및 유기 발광 표시 장치의 제조 방법 | |
KR20120031382A (ko) | 봉지박막 및 유기전계발광표시장치의 제조방법 | |
JP2003151779A (ja) | 有機led素子、転写用ドナー基板及び有機led素子の製造方法 | |
KR100769431B1 (ko) | 도너필름의 제조방법 및 이를 이용한 유기 전계발광표시장치의 제조방법 | |
US10686147B2 (en) | Organic light emitting display device and manufacturing method thereof | |
JP2010153045A (ja) | 成膜方法及び発光装置の作製方法 | |
JP2011065896A (ja) | 電子デバイスの製造方法 | |
KR100738792B1 (ko) | 유기 발광 소자 및 이의 제조방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
RD04 | Notification of resignation of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7424 Effective date: 20091109 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20100409 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20100413 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20100520 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20100609 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20100728 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20101012 |