JP5178859B2 - 電子装置、表示装置 - Google Patents
電子装置、表示装置 Download PDFInfo
- Publication number
- JP5178859B2 JP5178859B2 JP2011038124A JP2011038124A JP5178859B2 JP 5178859 B2 JP5178859 B2 JP 5178859B2 JP 2011038124 A JP2011038124 A JP 2011038124A JP 2011038124 A JP2011038124 A JP 2011038124A JP 5178859 B2 JP5178859 B2 JP 5178859B2
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- transistor
- electrically connected
- gate
- wiring
- source
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Description
よって、デジタル階調方式と時間階調方式を組み合わせた場合、サステイン(点灯)期間は2のべき乗の比をもって長さが決まることから、1フレーム期間の長さを考えると、多階調化が困難になる。
前述のタイミングチャートにおいて、アドレス(書き込み)期間とサステイン(点灯)期間とが分離していない場合には、サステイン(点灯)期間の最小単位が制限されてしまうという問題点を述べた。この問題を解決するために、以下のような表示方法が提案された。
サステイン(点灯)期間では、EL駆動用TFT1702に印加されるゲート・ソース間電圧は、保持容量1704が保持している電荷によってまかなわれる。
すなわち、EL駆動用TFT1702に印加されるゲート・ソース間電圧は、保持容量1704の両端子間の電位差に等しい。サステイン(点灯)期間が終了し、非表示期間を設けるには、リセット信号線1712にリセット信号を入力して、リセット用TFT1705を導通状態にする。この動作により、リセット用TFT1705のソース領域とドレイン領域との間の電位差、すなわち保持容量1704の両端子間の電位差が0[V]となる。よってEL駆動用TFT1702のゲート・ソース間電圧が0[V]となって非導通状態となり、EL素子1703への電流供給が遮断される。直ちにリセット用TFT1705は非導通状態に戻るが、保持容量1704の両端子間の電位差は0[V]のまま保持されるので、EL駆動用TFT1702のゲート・ソース間電圧も引き続き0[V]であり、その後新たに画像信号が書き込まれるまでは、EL素子1703は点灯しない。この非表示期間は、アドレス(書き込み)期間の長さをta、サステイン(点灯)期間の長さをts、1ゲート信号線選択期間の長さをtg(ta、ts、tg>0)
として、非表示期間の長さをtr(tr>0)とすると、tr=ta−(ts+tg)で求められる長さを少なくとも有する。こうして、短いサステイン(点灯)期間を挟んだアドレス(書き込み)期間の重複を回避することが出来る。
期間Tanと、j+1フレーム目のサブフレーム期間SF1でのアドレス(書き込み)期間Ta1とが重複する場合に、jフレーム目のサブフレーム期間SFnでのサステイン(点灯)期間SFnの終了後、前記j+1フレーム目のサブフレーム期間SF1でのアドレス(書き込み)期間Ta1の開始までの期間に非表示期間を有することを特徴としている。
期間の長さをtak、サステイン(点灯)期間の長さをtsk、1ゲート信号線選択期間の長さをtg(tak、tsk、tg>0)として、tak>tsk+tgが成立するとき、 SFkの有する非表示期間の長さをtrk(trk>0)とすると、 常に、trk≧tak−(tsk+tg)が成立することを特徴としている。
したがって、ゲート信号線1706が選択されるときは電位が上がり、スイッチング用TFT1701が導通状態となる。
また、アドレス(書き込み)期間は、1行目のゲート信号線が選択されてから、最終行のゲート信号線の選択が終了するまでの期間であるので,Ta1〜Ta3は全て等長である。
この動作が1行目から最終行まで行われる。続いて、サブフレーム期間SF2においても同様に、ゲート信号線306が選択され、ソース信号線307から、画素への信号の書き込みが行われる。各行では、画素への信号の書き込みが終了すると、直ちにサステイン(点灯)期間SF2に移る。この動作が1行目から最終行まで行われる。
を任意に制御することができる。
例えば、プラズマCVD法でSiH4、NH3、N2Oから作製される酸化窒化シリコン膜5002aを10〜200[nm](好ましくは50〜100[nm])形成し、同様にSiH4、N2Oから作製される酸化窒化水素化シリコン膜5002bを50〜200[nm](好ましくは100〜150[nm])の厚さに積層形成する。本実施例では下地膜5002を2層構造として示したが、前記絶縁膜の単層膜または2層以上積層させた構造として形成しても良い。
ゲート絶縁膜上に残渣を残すことなくエッチングするためには、10〜20[%]程度の割合でエッチング時間を増加させると良い。W膜に対する酸化窒化シリコン膜の選択比は2〜4(代表的には3)であるので、オーバーエッチング処理により、酸化窒化シリコン膜が露出した面は20〜50[nm]程度エッチングされることになる。こうして、第1のエッチング処理により第1の導電層と第2の導電層から成る第1の形状の導電層5011〜5016(第1の導電層5011a〜5016aと第2の導電層5011b〜5016b)を形成する。このとき、ゲート絶縁膜5007においては、第1の形状の導電層5011〜5016で覆われない領域は20〜50[nm]程度エッチングされ薄くなった領域が形成される(図6(A))。
また、5031は島状のソース信号線として機能する。
厚のアルミニウム膜を形成する。勿論、公知の陰極材料であるMgAg電極を用いても良い。そして陰極4019は4020で示される領域において配線4007に接続される。配線4007は陰極4019に所定の電圧を与えるための電源線であり、導電性ペースト材料4021を介してFPC4008に接続される。
、エポキシ樹脂、シリコン樹脂、PVB(ポリビニルブチラル)またはEVA(エチレンビニルアセテート)を用いることができる。この充填材4023の内部に乾燥剤を設けておくと、吸湿効果を保持できるので好ましい。また充填材4023の内部に、酸素を捕捉する効果を有する酸化防止剤等を配置することで、EL層の劣化を抑えても良い。
画素部において、点線枠1800で囲まれた部分が、1画素分の回路である。拡大図を図18(B)に示す。
EL素子1803は、実施例4の図10に示した構造によって形成されるため、1810が陰極,1811が陽極、1809は陽極配線となる。
実施例7に示したように、EL駆動用TFTにNチャネル型を用いた構造をとっても良いが、本実施例においては、例として、実施例1にて示したように、EL駆動用TFTにPチャネル型を用いるものとして述べる。
(T.Tsutsui, C.Adachi, S.Saito, Photochemical Processes in Organized Molecular Systems, ed.K.Honda,(Elsevier Sci.Pub., Tokyo,1991)p.437.)
上記の論文により報告されたEL材料(クマリン色素)の分子式を以下に示す。
上記の論文により報告されたEL材料(Pt錯体)の分子式を以下に示す。
(T.Tsutsui, M.-J.Yang, M.Yahiro, K.Nakamura, T.Watanabe, T.tsuji, Y.Fukuda, T.Wakimoto, S.Mayaguchi, Jpn.Appl.Phys., 38(12B)(1999)L1502.)
上記の論文により報告されたEL材料(Ir錯体)の分子式を以下に示す。
であり、本体3331、記録媒体(DVD等)3332、操作スイッチ3333、表示部(a)3334、表示部(b)3335等を含む。表示部(a)3334は主として画像情報を表示し、表示部(b)3335は主として文字情報を表示するが、本発明の電子装置およびその駆動方法はこれら表示部(a)3334、表示部(b)3335にて用いることが出来る。なお、記録媒体を備えた画像再生装置には家庭用ゲーム機器なども含まれる。
Claims (15)
- 第1のトランジスタのソースまたはドレインの一方に電気的に接続された第1の配線と、
第1のトランジスタのゲートに電気的に接続された第2の配線と、
保持容量の第1の電極と、第2のトランジスタのソース又はドレインの一方と、に電気的に接続された第3の配線と、
第3のトランジスタのゲートに電気的に接続された第4の配線と、
前記第2のトランジスタのソース又はドレインの他方に電気的に接続された画素電極と、を有する画素を複数有し、
前記第1のトランジスタのソース又はドレインの他方と、前記第2のトランジスタのゲートと、前記第3のトランジスタのソース又はドレインの一方と、前記保持容量の第2の電極と、は電気的に接続され、
一の前記画素における前記第3のトランジスタのソース又はドレインの他方は、他の一の前記画素における前記第2の配線と電気的に接続され、
前記第1の配線は、映像信号を伝えることができる機能を有し、
前記第2の配線は、前記第1のトランジスタをオン状態またはオフ状態にすることができる信号を伝えることができる機能を有し、
前記第3の配線は、前記画素電極に電流を伝えることができる機能を有し、
前記第4の配線は、前記第3のトランジスタをオン状態またはオフ状態にすることができる信号を伝えることができる機能を有することを特徴とする電子装置。 - 第1の配線と、第2の配線と、第3の配線と、第4の配線と、第5の配線と、第1のトランジスタと、第2のトランジスタと、第3のトランジスタと、第1の電極及び第2の電極とを備えた保持容量と、画素電極と、を有する電子装置であって、
前記第1のトランジスタのソースまたはドレインの一方は、前記第1の配線と電気的に接続され、
前記第1のトランジスタのソースまたはドレインの他方は、前記第2のトランジスタのゲートと電気的に接続され、
前記第1のトランジスタのゲートは、前記第2の配線と電気的に接続され、
前記第2のトランジスタのソースまたはドレインの一方は、前記第3の配線と電気的に接続され、
前記第2のトランジスタのソースまたはドレインの他方は、前記画素電極と電気的に接続され、
前記保持容量の第1の電極は、前記第2のトランジスタのゲートと電気的に接続され、 前記保持容量の第2の電極は、前記第3の配線と電気的に接続され、
前記第3のトランジスタのソースまたはドレインの一方は、前記第2のトランジスタのゲートと電気的に接続され、
前記第3のトランジスタのソースまたはドレインの他方は、前記第5の配線と電気的に接続され、
前記第3のトランジスタのゲートは、前記第4の配線と電気的に接続され、
前記第1の配線は、映像信号を伝えることができる機能を有し、
前記第2の配線は、前記第1のトランジスタをオン状態またはオフ状態にすることができる信号を伝えることができる機能を有し、
前記第3の配線は、前記画素電極に電流を伝えることができる機能を有し、
前記第4の配線は、前記第3のトランジスタをオン状態またはオフ状態にすることができる信号を伝えることができる機能を有し、
前記第5の配線は、前記第1乃至第3のトランジスタ以外の第4のトランジスタをオン状態またはオフ状態にすることができる信号を伝えることができる機能を有し、
前記第4のトランジスタは、別の行の画素に信号を書き込む時のスイッチング素子としての機能を有することを特徴とする電子装置。 - ソース信号線と、第1のゲート信号線と、電流供給線と、リセット信号線と、第2のゲート信号線と、第1のトランジスタと、第2のトランジスタと、第3のトランジスタと、第1の電極及び第2の電極とを備えた保持容量と、画素電極と、を有する電子装置であって、
前記第2のゲート信号線は、別の行の画素に信号を書き込む時のスイッチング素子をオン状態又はオフ状態にすることができる信号を伝えることができる機能を有し、
前記第1のトランジスタのソースまたはドレインの一方は、前記ソース信号線と電気的に接続され、
前記第1のトランジスタのソースまたはドレインの他方は、前記第2のトランジスタのゲートと電気的に接続され、
前記第1のトランジスタのゲートは、前記第1のゲート信号線と電気的に接続され、
前記第2のトランジスタのソースまたはドレインの一方は、前記電流供給線と電気的に接続され、
前記第2のトランジスタのソースまたはドレインの他方は、前記画素電極と電気的に接続され、
前記保持容量の第1の電極は、前記第2のトランジスタのゲートと電気的に接続され、 前記保持容量の第2の電極は、前記電流供給線と電気的に接続され、
前記第3のトランジスタのソースまたはドレインの一方は、前記第2のトランジスタのゲートと電気的に接続され、
前記第3のトランジスタのソースまたはドレインの他方は、前記第2のゲート信号線と電気的に接続され、
前記第3のトランジスタのゲートは、前記リセット信号線と電気的に接続されていることを特徴とする電子装置。 - 第1のトランジスタのソースまたはドレインの一方に電気的に接続されたソース信号線と、
第1のトランジスタのゲートに電気的に接続されたゲート信号線と、
保持容量の第1の電極と、第2のトランジスタのソース又はドレインの一方と、に電気的に接続された電流供給線と、
第3のトランジスタのゲートに電気的に接続されたリセット信号線と、
前記第2のトランジスタのソース又はドレインの他方に電気的に接続されたEL素子と、を有する画素を複数有し、
前記第1のトランジスタのソース又はドレインの他方と、前記第2のトランジスタのゲートと、前記第3のトランジスタのソース又はドレインの一方と、前記保持容量の第2の電極と、は電気的に接続され、
一の前記画素における前記第3のトランジスタのソース又はドレインの他方は、他の一の前記画素における前記ゲート信号線と電気的に接続されていることを特徴とする表示装置。 - 第1の配線と、第2の配線と、第3の配線と、第4の配線と、第5の配線と、第1のトランジスタと、第2のトランジスタと、第3のトランジスタと、第1の電極及び第2の電極とを備えた保持容量と、EL素子と、を有する表示装置であって、
前記第1のトランジスタのソースまたはドレインの一方は、前記第1の配線と電気的に接続され、
前記第1のトランジスタのソースまたはドレインの他方は、前記第2のトランジスタのゲートと電気的に接続され、
前記第1のトランジスタのゲートは、前記第2の配線と電気的に接続され、
前記第2のトランジスタのソースまたはドレインの一方は、前記第3の配線と電気的に接続され、
前記第2のトランジスタのソースまたはドレインの他方は、前記EL素子と電気的に接続され、
前記保持容量の第1の電極は、前記第2のトランジスタのゲートと電気的に接続され、 前記保持容量の第2の電極は、前記第3の配線と電気的に接続され、
前記第3のトランジスタのソースまたはドレインの一方は、前記第2のトランジスタのゲートと電気的に接続され、
前記第3のトランジスタのソースまたはドレインの他方は、前記第5の配線と電気的に接続され、
前記第3のトランジスタのゲートは、前記第4の配線と電気的に接続され、
前記第1の配線は、映像信号を伝えることができる機能を有し、
前記第2の配線は、前記第1のトランジスタをオン状態またはオフ状態にすることができる信号を伝えることができる機能を有し、
前記第3の配線は、前記EL素子に電流を伝えることができる機能を有し、
前記第4の配線は、前記第3のトランジスタをオン状態またはオフ状態にすることができる信号を伝えることができる機能を有し、
前記第5の配線は、前記第1乃至第3のトランジスタ以外の第4のトランジスタをオン状態またはオフ状態にすることができる信号を伝えることができる機能を有し、
前記第4のトランジスタは、別の行の画素に信号を書き込む時のスイッチング素子としての機能を有することを特徴とする表示装置。 - ソース信号線と、第1のゲート信号線と、電流供給線と、リセット信号線と、第2のゲート信号線と、第1のトランジスタと、第2のトランジスタと、第3のトランジスタと、第1の電極及び第2の電極とを備えた保持容量と、EL素子と、を有する表示装置であって、
前記第2のゲート信号線は、別の行の画素に信号を書き込む時のスイッチング素子をオン状態又はオフ状態にすることができる信号を伝えることができる機能を有し、
前記第1のトランジスタのソースまたはドレインの一方は、前記ソース信号線と電気的に接続され、
前記第1のトランジスタのソースまたはドレインの他方は、前記第2のトランジスタのゲートと電気的に接続され、
前記第1のトランジスタのゲートは、前記第1のゲート信号線と電気的に接続され、
前記第2のトランジスタのソースまたはドレインの一方は、前記電流供給線と電気的に接続され、
前記第2のトランジスタのソースまたはドレインの他方は、前記EL素子と電気的に接続され、
前記保持容量の第1の電極は、前記第2のトランジスタのゲートと電気的に接続され、 前記保持容量の第2の電極は、前記電流供給線と電気的に接続され、
前記第3のトランジスタのソースまたはドレインの一方は、前記第2のトランジスタのゲートと電気的に接続され、
前記第3のトランジスタのソースまたはドレインの他方は、前記第2のゲート信号線と電気的に接続され、
前記第3のトランジスタのゲートは、前記リセット信号線と電気的に接続されていることを特徴とする表示装置。 - 請求項1乃至請求項3のいずれか一項において、
前記第2のトランジスタはマルチゲート構造を有することを特徴とする電子装置。 - 請求項1又は請求項3において、
前記第2のトランジスタと並列接続された第4のトランジスタをそれぞれの前記画素に有することを特徴とする電子装置。 - 請求項4乃至請求項6のいずれか一項において、
前記第2のトランジスタはマルチゲート構造を有することを特徴とする表示装置。 - 請求項4又は請求項6において、
前記第2のトランジスタと並列接続された第4のトランジスタをそれぞれの前記画素に有することを特徴とする表示装置。 - 請求項4乃至請求項6のいずれか一項において、
前記EL素子は燐光材料を有することを特徴とする表示装置。 - 第1のトランジスタのソースまたはドレインの一方に電気的に接続された第1の配線と、
第1のトランジスタのゲートに電気的に接続された第2の配線と、
保持容量の第1の電極と、第2のトランジスタのソース又はドレインの一方と、に電気的に接続された第3の配線と、
第3のトランジスタのゲートに電気的に接続された第4の配線と、
前記第2のトランジスタのソース又はドレインの他方に電気的に接続されたEL素子と、を有する画素を複数有し、
前記第1のトランジスタのソース又はドレインの他方と、前記第2のトランジスタのゲートと、前記第3のトランジスタのソース又はドレインの一方と、前記保持容量の第2の電極と、は電気的に接続され、
前記第3のトランジスタのソース又はドレインの他方は、前記第2の配線と電気的に接続され、
前記第1の配線は、映像信号を伝えることができる機能を有し、
前記第2の配線は、前記第1のトランジスタをオン状態またはオフ状態にすることができる信号を伝えることができる機能を有し、
前記第3の配線は、前記EL素子に電流を伝えることができる機能を有し、
前記第4の配線は、前記第3のトランジスタをオン状態またはオフ状態にすることができる信号を伝えることができる機能を有し、
複数の前記画素は、第1の画素と、第2の画素と、第3の画素と、を有し、
前記第1の画素の前記第3の配線は、第1の電圧を伝えることができる機能を有し、
前記第2の画素の前記第3の配線は、第2の電圧を伝えることができる機能を有し、
前記第3の画素の前記第3の配線は、第3の電圧を伝えることができる機能を有し、
前記第1の画素の前記EL素子は、第1の色を発光することができる機能を有し、
前記第2の画素の前記EL素子は、第2の色を発光することができる機能を有し、
前記第3の画素の前記EL素子は、第3の色を発光することができる機能を有し、
前記第1乃至第3の電圧は互いに異なり、
前記第1乃至第3の色は互いに異なることを特徴とする表示装置。 - 第1のトランジスタのソースまたはドレインの一方に電気的に接続されたソース信号線と、
第1のトランジスタのゲートに電気的に接続されたゲート信号線と、
保持容量の第1の電極と、第2のトランジスタのソース又はドレインの一方と、に電気的に接続された電流供給線と、
第3のトランジスタのゲートに電気的に接続されたリセット信号線と、
前記第2のトランジスタのソース又はドレインの他方に電気的に接続されたEL素子と、を有する画素を複数有し、
前記第1のトランジスタのソース又はドレインの他方と、前記第2のトランジスタのゲートと、前記第3のトランジスタのソース又はドレインの一方と、前記保持容量の第2の電極と、は電気的に接続され、
前記第3のトランジスタのソース又はドレインの他方は、前記ゲート信号線と電気的に接続され、
複数の前記画素は、第1の画素と、第2の画素と、第3の画素と、を有し、
前記第1の画素の前記電流供給線は、第1の電圧を伝えることができる機能を有し、
前記第2の画素の前記電流供給線は、第2の電圧を伝えることができる機能を有し、
前記第3の画素の前記電流供給線は、第3の電圧を伝えることができる機能を有し、
前記第1の画素の前記EL素子は、第1の色を発光することができる機能を有し、
前記第2の画素の前記EL素子は、第2の色を発光することができる機能を有し、
前記第3の画素の前記EL素子は、第3の色を発光することができる機能を有し、
前記第1乃至第3の電圧は互いに異なり、
前記第1乃至第3の色は互いに異なることを特徴とする表示装置。 - 請求項12において、
前記第1の電圧は、前記第2の電圧及び前記第3の電圧よりも高く、
前記第2の配線は、前記第1の画素の前記第3の配線の電位よりも高い電位を供給することができる機能を有することを特徴とする表示装置。 - 請求項13において、
前記第1の電圧は、前記第2の電圧及び前記第3の電圧よりも高く、
前記ゲート信号線は、前記第1の画素の前記電流供給線の電位よりも高い電位を供給することができる機能を有することを特徴とする表示装置。
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Families Citing this family (200)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6483484B1 (en) * | 1998-12-18 | 2002-11-19 | Semiconductor Energy Laboratory Co., Ltd. | Goggle type display system |
FR2794563B1 (fr) * | 1999-06-04 | 2002-08-16 | Thomson Multimedia Sa | Procede d'adressage de panneau d'affichage au plasma |
TW468283B (en) | 1999-10-12 | 2001-12-11 | Semiconductor Energy Lab | EL display device and a method of manufacturing the same |
TW471011B (en) | 1999-10-13 | 2002-01-01 | Semiconductor Energy Lab | Thin film forming apparatus |
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US7129918B2 (en) * | 2000-03-10 | 2006-10-31 | Semiconductor Energy Laboratory Co., Ltd. | Electronic device and method of driving electronic device |
US6847341B2 (en) * | 2000-04-19 | 2005-01-25 | Semiconductor Energy Laboratory Co., Ltd. | Electronic device and method of driving the same |
TW531901B (en) * | 2000-04-27 | 2003-05-11 | Semiconductor Energy Lab | Light emitting device |
SG125891A1 (en) * | 2000-09-08 | 2006-10-30 | Semiconductor Energy Lab | Light emitting device, method of manufacturing thesame, and thin film forming apparatus |
US7030847B2 (en) * | 2000-11-07 | 2006-04-18 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device and electronic device |
US7569849B2 (en) | 2001-02-16 | 2009-08-04 | Ignis Innovation Inc. | Pixel driver circuit and pixel circuit having the pixel driver circuit |
TW548860B (en) * | 2001-06-20 | 2003-08-21 | Semiconductor Energy Lab | Light emitting device and method of manufacturing the same |
US7211828B2 (en) | 2001-06-20 | 2007-05-01 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device and electronic apparatus |
US8633878B2 (en) * | 2001-06-21 | 2014-01-21 | Japan Display Inc. | Image display |
JP4831892B2 (ja) | 2001-07-30 | 2011-12-07 | 株式会社半導体エネルギー研究所 | 半導体装置 |
JP4789369B2 (ja) * | 2001-08-08 | 2011-10-12 | 株式会社半導体エネルギー研究所 | 表示装置及び電子機器 |
US7488986B2 (en) * | 2001-10-26 | 2009-02-10 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device |
US6956240B2 (en) * | 2001-10-30 | 2005-10-18 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device |
KR100940342B1 (ko) * | 2001-11-13 | 2010-02-04 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시장치 및 그 구동방법 |
US7167169B2 (en) * | 2001-11-20 | 2007-01-23 | Toppoly Optoelectronics Corporation | Active matrix oled voltage drive pixel circuit |
JP3983037B2 (ja) | 2001-11-22 | 2007-09-26 | 株式会社半導体エネルギー研究所 | 発光装置およびその作製方法 |
TWI264121B (en) | 2001-11-30 | 2006-10-11 | Semiconductor Energy Lab | A display device, a method of manufacturing a semiconductor device, and a method of manufacturing a display device |
GB0130601D0 (en) * | 2001-12-21 | 2002-02-06 | Koninkl Philips Electronics Nv | Active matrix display device |
CN1293421C (zh) * | 2001-12-27 | 2007-01-03 | Lg.菲利浦Lcd株式会社 | 电致发光显示面板及用于操作它的方法 |
JP2003195810A (ja) * | 2001-12-28 | 2003-07-09 | Casio Comput Co Ltd | 駆動回路、駆動装置及び光学要素の駆動方法 |
US6953735B2 (en) | 2001-12-28 | 2005-10-11 | Semiconductor Energy Laboratory Co., Ltd. | Method for fabricating a semiconductor device by transferring a layer to a support with curvature |
KR100834346B1 (ko) * | 2001-12-28 | 2008-06-02 | 엘지디스플레이 주식회사 | 능동행렬 유기전기발광소자 |
KR100618574B1 (ko) * | 2001-12-29 | 2006-08-31 | 엘지.필립스 엘시디 주식회사 | 유기 전계 발광 소자의 구동 회로 |
JP3724430B2 (ja) * | 2002-02-04 | 2005-12-07 | ソニー株式会社 | 有機el表示装置およびその制御方法 |
JP4024557B2 (ja) | 2002-02-28 | 2007-12-19 | 株式会社半導体エネルギー研究所 | 発光装置、電子機器 |
JP4357413B2 (ja) * | 2002-04-26 | 2009-11-04 | 東芝モバイルディスプレイ株式会社 | El表示装置 |
KR100956463B1 (ko) * | 2002-04-26 | 2010-05-10 | 도시바 모바일 디스플레이 가부시키가이샤 | El 표시 장치 |
JP3972359B2 (ja) * | 2002-06-07 | 2007-09-05 | カシオ計算機株式会社 | 表示装置 |
JP3918642B2 (ja) * | 2002-06-07 | 2007-05-23 | カシオ計算機株式会社 | 表示装置及びその駆動方法 |
JP4610843B2 (ja) * | 2002-06-20 | 2011-01-12 | カシオ計算機株式会社 | 表示装置及び表示装置の駆動方法 |
US9153168B2 (en) * | 2002-07-09 | 2015-10-06 | Semiconductor Energy Laboratory Co., Ltd. | Method for deciding duty factor in driving light-emitting device and driving method using the duty factor |
US7352133B2 (en) * | 2002-08-05 | 2008-04-01 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device |
JP2004077567A (ja) * | 2002-08-09 | 2004-03-11 | Semiconductor Energy Lab Co Ltd | 表示装置及びその駆動方法 |
JP4103500B2 (ja) * | 2002-08-26 | 2008-06-18 | カシオ計算機株式会社 | 表示装置及び表示パネルの駆動方法 |
TWI354975B (en) * | 2002-09-05 | 2011-12-21 | Semiconductor Energy Lab | Light emitting device and driving method thereof |
EP1554712A4 (en) * | 2002-10-21 | 2009-11-11 | Semiconductor Energy Lab | DISPLAY DEVICE AND METHOD FOR CONTROLLING THE SAME |
EP1580718B1 (en) * | 2002-11-29 | 2009-09-23 | Semiconductor Energy Laboratory Co., Ltd. | Display and its driving method, and electronic device |
US7271784B2 (en) * | 2002-12-18 | 2007-09-18 | Semiconductor Energy Laboratory Co., Ltd. | Display device and driving method thereof |
CA2419704A1 (en) | 2003-02-24 | 2004-08-24 | Ignis Innovation Inc. | Method of manufacturing a pixel with organic light-emitting diode |
JP3952965B2 (ja) * | 2003-02-25 | 2007-08-01 | カシオ計算機株式会社 | 表示装置及び表示装置の駆動方法 |
KR101138806B1 (ko) | 2003-03-26 | 2012-04-24 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 소자기판 및 발광장치 |
GB0313041D0 (en) * | 2003-06-06 | 2003-07-09 | Koninkl Philips Electronics Nv | Display device having current-driven pixels |
DE10393384B4 (de) * | 2003-06-13 | 2017-04-27 | Sharp Kabushiki Kaisha | Organische EL-Anzeige mit reduzierten mechanischen Spannungen |
JP2005005227A (ja) * | 2003-06-16 | 2005-01-06 | Hitachi Displays Ltd | 有機el発光表示装置 |
US7053412B2 (en) * | 2003-06-27 | 2006-05-30 | The Trustees Of Princeton University And Universal Display Corporation | Grey scale bistable display |
US8937580B2 (en) * | 2003-08-08 | 2015-01-20 | Semiconductor Energy Laboratory Co., Ltd. | Driving method of light emitting device and light emitting device |
CA2443206A1 (en) | 2003-09-23 | 2005-03-23 | Ignis Innovation Inc. | Amoled display backplanes - pixel driver circuits, array architecture, and external compensation |
JP4488709B2 (ja) * | 2003-09-29 | 2010-06-23 | 三洋電機株式会社 | 有機elパネル |
EP1521316B1 (en) | 2003-10-03 | 2016-05-25 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of a light emitting element |
US7018012B2 (en) * | 2003-11-14 | 2006-03-28 | Lexmark International, Inc. | Microfluid ejection device having efficient logic and driver circuitry |
US7683860B2 (en) * | 2003-12-02 | 2010-03-23 | Semiconductor Energy Laboratory Co., Ltd. | Display device, driving method thereof, and element substrate |
CN101673808B (zh) * | 2003-12-26 | 2012-05-23 | 株式会社半导体能源研究所 | 发光元件 |
JP4203656B2 (ja) * | 2004-01-16 | 2009-01-07 | カシオ計算機株式会社 | 表示装置及び表示パネルの駆動方法 |
US8427494B2 (en) * | 2004-01-30 | 2013-04-23 | Nvidia Corporation | Variable-length coding data transfer interface |
US20050205880A1 (en) * | 2004-03-19 | 2005-09-22 | Aya Anzai | Display device and electronic appliance |
JP4665419B2 (ja) * | 2004-03-30 | 2011-04-06 | カシオ計算機株式会社 | 画素回路基板の検査方法及び検査装置 |
KR101080350B1 (ko) * | 2004-04-07 | 2011-11-04 | 삼성전자주식회사 | 표시 장치 및 그 구동 방법 |
US7374983B2 (en) | 2004-04-08 | 2008-05-20 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
CN100557667C (zh) * | 2004-04-22 | 2009-11-04 | 株式会社半导体能源研究所 | 发光装置及其驱动方法 |
KR101121617B1 (ko) * | 2004-04-29 | 2012-02-28 | 엘지디스플레이 주식회사 | 일렉트로-루미네센스 표시장치 |
EP1598200A3 (en) * | 2004-05-21 | 2009-05-06 | Seiko Epson Corporation | Line head and image forming apparatus incorporating the same |
US8144146B2 (en) * | 2004-05-21 | 2012-03-27 | Semiconductor Energy Laboratory Co., Ltd. | Display device and electronic device |
JP2005351920A (ja) * | 2004-06-08 | 2005-12-22 | Semiconductor Energy Lab Co Ltd | 表示装置の制御回路及びそれを内蔵した表示装置・電子機器並びにその駆動方法 |
KR100636503B1 (ko) * | 2004-06-25 | 2006-10-18 | 삼성에스디아이 주식회사 | 발광 표시장치와 그의 제조방법 |
CA2472671A1 (en) | 2004-06-29 | 2005-12-29 | Ignis Innovation Inc. | Voltage-programming scheme for current-driven amoled displays |
CN101027799B (zh) * | 2004-09-24 | 2010-06-16 | 株式会社半导体能源研究所 | 发光器件 |
US20060076567A1 (en) * | 2004-09-24 | 2006-04-13 | Keisuke Miyagawa | Driving method of light emitting device |
KR101098778B1 (ko) * | 2004-09-27 | 2011-12-26 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 디스플레이 디바이스와 이 디스플레이 디바이스를 사용하는전자 디바이스 |
GB0424112D0 (en) * | 2004-10-29 | 2004-12-01 | Koninkl Philips Electronics Nv | Active matrix display devices |
TWI382455B (zh) * | 2004-11-04 | 2013-01-11 | Semiconductor Energy Lab | 半導體裝置和其製造方法 |
CA2490858A1 (en) | 2004-12-07 | 2006-06-07 | Ignis Innovation Inc. | Driving method for compensated voltage-programming of amoled displays |
TWI402790B (zh) | 2004-12-15 | 2013-07-21 | Ignis Innovation Inc | 用以程式化,校準及驅動一發光元件顯示器的方法及系統 |
US9275579B2 (en) | 2004-12-15 | 2016-03-01 | Ignis Innovation Inc. | System and methods for extraction of threshold and mobility parameters in AMOLED displays |
US9799246B2 (en) | 2011-05-20 | 2017-10-24 | Ignis Innovation Inc. | System and methods for extraction of threshold and mobility parameters in AMOLED displays |
US9280933B2 (en) | 2004-12-15 | 2016-03-08 | Ignis Innovation Inc. | System and methods for extraction of threshold and mobility parameters in AMOLED displays |
US10012678B2 (en) | 2004-12-15 | 2018-07-03 | Ignis Innovation Inc. | Method and system for programming, calibrating and/or compensating, and driving an LED display |
US10013907B2 (en) | 2004-12-15 | 2018-07-03 | Ignis Innovation Inc. | Method and system for programming, calibrating and/or compensating, and driving an LED display |
US8576217B2 (en) | 2011-05-20 | 2013-11-05 | Ignis Innovation Inc. | System and methods for extraction of threshold and mobility parameters in AMOLED displays |
CA2495726A1 (en) | 2005-01-28 | 2006-07-28 | Ignis Innovation Inc. | Locally referenced voltage programmed pixel for amoled displays |
US7705821B2 (en) * | 2005-01-31 | 2010-04-27 | Semiconductor Energy Laboratory Co., Ltd. | Driving method using divided frame period |
US20060197088A1 (en) * | 2005-03-07 | 2006-09-07 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method of the same |
US20060279561A1 (en) * | 2005-04-19 | 2006-12-14 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
US8300031B2 (en) * | 2005-04-20 | 2012-10-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device comprising transistor having gate and drain connected through a current-voltage conversion element |
US8059109B2 (en) * | 2005-05-20 | 2011-11-15 | Semiconductor Energy Laboratory Co., Ltd. | Display device and electronic apparatus |
TWI301604B (en) * | 2005-05-24 | 2008-10-01 | Au Optronics Corp | Method for driving an active display |
US7852298B2 (en) | 2005-06-08 | 2010-12-14 | Ignis Innovation Inc. | Method and system for driving a light emitting device display |
JP5036223B2 (ja) * | 2005-06-20 | 2012-09-26 | 三洋電機株式会社 | エレクトロルミネッセンス表示装置 |
US7649513B2 (en) * | 2005-06-25 | 2010-01-19 | Lg Display Co., Ltd | Organic light emitting diode display |
US20070001954A1 (en) * | 2005-07-04 | 2007-01-04 | Semiconductor Energy Laboratory Co., Ltd. | Display device and driving method of display device |
US7733017B2 (en) * | 2005-07-08 | 2010-06-08 | Peysakh Shapiro | Display apparatus with replaceable electroluminescent element |
EP1758072A3 (en) * | 2005-08-24 | 2007-05-02 | Semiconductor Energy Laboratory Co., Ltd. | Display device and driving method thereof |
CA2518276A1 (en) | 2005-09-13 | 2007-03-13 | Ignis Innovation Inc. | Compensation technique for luminance degradation in electro-luminance devices |
US8149346B2 (en) | 2005-10-14 | 2012-04-03 | Semiconductor Energy Laboratory Co., Ltd. | Display device and manufacturing method thereof |
KR100662988B1 (ko) * | 2005-10-31 | 2006-12-28 | 삼성에스디아이 주식회사 | 데이터 구동회로와 이를 이용한 발광 표시장치 및 그의구동방법 |
US8530934B2 (en) | 2005-11-07 | 2013-09-10 | Atmel Corporation | Integrated circuit structures containing a strain-compensated compound semiconductor layer and methods and systems related thereto |
KR101209041B1 (ko) * | 2005-11-25 | 2012-12-06 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 및 그 제조 방법 |
KR100804639B1 (ko) * | 2005-11-28 | 2008-02-21 | 삼성전자주식회사 | 디스플레이 장치 구동 방법 |
US7847793B2 (en) | 2005-12-08 | 2010-12-07 | Semiconductor Energy Laboratory Co., Ltd. | Control circuit of display device, and display device and electronic appliance incorporating the same |
US9489891B2 (en) | 2006-01-09 | 2016-11-08 | Ignis Innovation Inc. | Method and system for driving an active matrix display circuit |
EP2008264B1 (en) | 2006-04-19 | 2016-11-16 | Ignis Innovation Inc. | Stable driving scheme for active matrix displays |
FR2900492B1 (fr) * | 2006-04-28 | 2008-10-31 | Thales Sa | Ecran electroluminescent organique |
CA2556961A1 (en) | 2006-08-15 | 2008-02-15 | Ignis Innovation Inc. | Oled compensation technique based on oled capacitance |
TWI442368B (zh) * | 2006-10-26 | 2014-06-21 | Semiconductor Energy Lab | 電子裝置,顯示裝置,和半導體裝置,以及其驅動方法 |
JP5352081B2 (ja) | 2006-12-20 | 2013-11-27 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
US20090100063A1 (en) * | 2007-10-10 | 2009-04-16 | Henrik Bengtsson | System and method for obtaining location information using a networked portable electronic device |
KR101404549B1 (ko) | 2008-02-15 | 2014-06-10 | 삼성디스플레이 주식회사 | 표시 장치 및 그 구동 방법 |
JP5141363B2 (ja) * | 2008-05-03 | 2013-02-13 | ソニー株式会社 | 半導体デバイス、表示パネル及び電子機器 |
JP4816686B2 (ja) | 2008-06-06 | 2011-11-16 | ソニー株式会社 | 走査駆動回路 |
KR100922065B1 (ko) | 2008-06-11 | 2009-10-19 | 삼성모바일디스플레이주식회사 | 화소 및 이를 이용한 유기전계발광 표시장치 |
KR101274710B1 (ko) | 2008-07-10 | 2013-06-12 | 엘지디스플레이 주식회사 | 유기발광다이오드 표시장치 |
KR101419244B1 (ko) * | 2008-07-23 | 2014-07-16 | 엘지디스플레이 주식회사 | 유기발광다이오드 표시장치 및 이의 구동방법 |
JP2010066331A (ja) * | 2008-09-09 | 2010-03-25 | Fujifilm Corp | 表示装置 |
US9370075B2 (en) | 2008-12-09 | 2016-06-14 | Ignis Innovation Inc. | System and method for fast compensation programming of pixels in a display |
US9384698B2 (en) | 2009-11-30 | 2016-07-05 | Ignis Innovation Inc. | System and methods for aging compensation in AMOLED displays |
CA2669367A1 (en) | 2009-06-16 | 2010-12-16 | Ignis Innovation Inc | Compensation technique for color shift in displays |
US10319307B2 (en) | 2009-06-16 | 2019-06-11 | Ignis Innovation Inc. | Display system with compensation techniques and/or shared level resources |
CA2688870A1 (en) | 2009-11-30 | 2011-05-30 | Ignis Innovation Inc. | Methode and techniques for improving display uniformity |
US9311859B2 (en) | 2009-11-30 | 2016-04-12 | Ignis Innovation Inc. | Resetting cycle for aging compensation in AMOLED displays |
US8692742B2 (en) | 2009-09-01 | 2014-04-08 | Au Optronics Corporation | Pixel driving circuit with multiple current paths in a light emitting display panel |
KR20120068772A (ko) | 2009-09-16 | 2012-06-27 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 발광 장치 및 이의 제조 방법 |
US8497828B2 (en) | 2009-11-12 | 2013-07-30 | Ignis Innovation Inc. | Sharing switch TFTS in pixel circuits |
US10996258B2 (en) | 2009-11-30 | 2021-05-04 | Ignis Innovation Inc. | Defect detection and correction of pixel circuits for AMOLED displays |
US10867536B2 (en) | 2013-04-22 | 2020-12-15 | Ignis Innovation Inc. | Inspection system for OLED display panels |
US8803417B2 (en) | 2009-12-01 | 2014-08-12 | Ignis Innovation Inc. | High resolution pixel architecture |
US10163401B2 (en) | 2010-02-04 | 2018-12-25 | Ignis Innovation Inc. | System and methods for extracting correlation curves for an organic light emitting device |
US10089921B2 (en) | 2010-02-04 | 2018-10-02 | Ignis Innovation Inc. | System and methods for extracting correlation curves for an organic light emitting device |
CA2692097A1 (en) | 2010-02-04 | 2011-08-04 | Ignis Innovation Inc. | Extracting correlation curves for light emitting device |
US20140313111A1 (en) | 2010-02-04 | 2014-10-23 | Ignis Innovation Inc. | System and methods for extracting correlation curves for an organic light emitting device |
US9881532B2 (en) | 2010-02-04 | 2018-01-30 | Ignis Innovation Inc. | System and method for extracting correlation curves for an organic light emitting device |
US10176736B2 (en) | 2010-02-04 | 2019-01-08 | Ignis Innovation Inc. | System and methods for extracting correlation curves for an organic light emitting device |
CN102770903B (zh) * | 2010-02-26 | 2015-10-07 | 株式会社半导体能源研究所 | 显示装置及具备该显示装置的电子书阅读器 |
CA2696778A1 (en) | 2010-03-17 | 2011-09-17 | Ignis Innovation Inc. | Lifetime, uniformity, parameter extraction methods |
US8907991B2 (en) | 2010-12-02 | 2014-12-09 | Ignis Innovation Inc. | System and methods for thermal compensation in AMOLED displays |
US20140368491A1 (en) | 2013-03-08 | 2014-12-18 | Ignis Innovation Inc. | Pixel circuits for amoled displays |
US9606607B2 (en) | 2011-05-17 | 2017-03-28 | Ignis Innovation Inc. | Systems and methods for display systems with dynamic power control |
US9886899B2 (en) | 2011-05-17 | 2018-02-06 | Ignis Innovation Inc. | Pixel Circuits for AMOLED displays |
CN105869575B (zh) | 2011-05-17 | 2018-09-21 | 伊格尼斯创新公司 | 操作显示器的方法 |
US9351368B2 (en) | 2013-03-08 | 2016-05-24 | Ignis Innovation Inc. | Pixel circuits for AMOLED displays |
US9530349B2 (en) | 2011-05-20 | 2016-12-27 | Ignis Innovations Inc. | Charged-based compensation and parameter extraction in AMOLED displays |
US9466240B2 (en) | 2011-05-26 | 2016-10-11 | Ignis Innovation Inc. | Adaptive feedback system for compensating for aging pixel areas with enhanced estimation speed |
EP2715710B1 (en) | 2011-05-27 | 2017-10-18 | Ignis Innovation Inc. | Systems and methods for aging compensation in amoled displays |
EP2715711A4 (en) | 2011-05-28 | 2014-12-24 | Ignis Innovation Inc | SYSTEM AND METHOD FOR FAST COMPENSATION PROGRAMMING OF PIXELS ON A DISPLAY |
US8901579B2 (en) | 2011-08-03 | 2014-12-02 | Ignis Innovation Inc. | Organic light emitting diode and method of manufacturing |
US9070775B2 (en) | 2011-08-03 | 2015-06-30 | Ignis Innovations Inc. | Thin film transistor |
JP6050054B2 (ja) | 2011-09-09 | 2016-12-21 | 株式会社半導体エネルギー研究所 | 半導体装置 |
US9324268B2 (en) | 2013-03-15 | 2016-04-26 | Ignis Innovation Inc. | Amoled displays with multiple readout circuits |
US9385169B2 (en) | 2011-11-29 | 2016-07-05 | Ignis Innovation Inc. | Multi-functional active matrix organic light-emitting diode display |
US10089924B2 (en) | 2011-11-29 | 2018-10-02 | Ignis Innovation Inc. | Structural and low-frequency non-uniformity compensation |
US8937632B2 (en) | 2012-02-03 | 2015-01-20 | Ignis Innovation Inc. | Driving system for active-matrix displays |
US10043794B2 (en) | 2012-03-22 | 2018-08-07 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and electronic device |
US9747834B2 (en) * | 2012-05-11 | 2017-08-29 | Ignis Innovation Inc. | Pixel circuits including feedback capacitors and reset capacitors, and display systems therefore |
US8922544B2 (en) | 2012-05-23 | 2014-12-30 | Ignis Innovation Inc. | Display systems with compensation for line propagation delay |
US9786223B2 (en) | 2012-12-11 | 2017-10-10 | Ignis Innovation Inc. | Pixel circuits for AMOLED displays |
US9336717B2 (en) | 2012-12-11 | 2016-05-10 | Ignis Innovation Inc. | Pixel circuits for AMOLED displays |
KR102309244B1 (ko) | 2013-02-20 | 2021-10-05 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
US9721505B2 (en) | 2013-03-08 | 2017-08-01 | Ignis Innovation Inc. | Pixel circuits for AMOLED displays |
CA2894717A1 (en) | 2015-06-19 | 2016-12-19 | Ignis Innovation Inc. | Optoelectronic device characterization in array with shared sense line |
EP3043338A1 (en) | 2013-03-14 | 2016-07-13 | Ignis Innovation Inc. | Re-interpolation with edge detection for extracting an aging pattern for amoled displays |
CN105247462A (zh) | 2013-03-15 | 2016-01-13 | 伊格尼斯创新公司 | Amoled显示器的触摸分辨率的动态调整 |
CN105474296B (zh) | 2013-08-12 | 2017-08-18 | 伊格尼斯创新公司 | 一种使用图像数据来驱动显示器的方法及装置 |
GB2519084A (en) * | 2013-10-08 | 2015-04-15 | Plastic Logic Ltd | Transistor addressing |
KR102049793B1 (ko) | 2013-11-15 | 2020-01-08 | 엘지디스플레이 주식회사 | 유기전계발광 표시장치 |
US9741282B2 (en) | 2013-12-06 | 2017-08-22 | Ignis Innovation Inc. | OLED display system and method |
US9761170B2 (en) | 2013-12-06 | 2017-09-12 | Ignis Innovation Inc. | Correction for localized phenomena in an image array |
WO2015087192A1 (en) | 2013-12-12 | 2015-06-18 | Semiconductor Energy Laboratory Co., Ltd. | Peeling method and peeling apparatus |
US9502653B2 (en) | 2013-12-25 | 2016-11-22 | Ignis Innovation Inc. | Electrode contacts |
US10997901B2 (en) | 2014-02-28 | 2021-05-04 | Ignis Innovation Inc. | Display system |
US10176752B2 (en) | 2014-03-24 | 2019-01-08 | Ignis Innovation Inc. | Integrated gate driver |
DE102015206281A1 (de) | 2014-04-08 | 2015-10-08 | Ignis Innovation Inc. | Anzeigesystem mit gemeinsam genutzten Niveauressourcen für tragbare Vorrichtungen |
US9985802B2 (en) * | 2014-10-31 | 2018-05-29 | Qualcomm Incorporated | Channel estimation enhancements |
CA2872563A1 (en) | 2014-11-28 | 2016-05-28 | Ignis Innovation Inc. | High pixel density array architecture |
CA2873476A1 (en) | 2014-12-08 | 2016-06-08 | Ignis Innovation Inc. | Smart-pixel display architecture |
CA2879462A1 (en) | 2015-01-23 | 2016-07-23 | Ignis Innovation Inc. | Compensation for color variation in emissive devices |
WO2016126771A1 (en) * | 2015-02-04 | 2016-08-11 | E Ink Corporation | Electro-optic displays with reduced remnant voltage, and related apparatus and methods |
CA2886862A1 (en) | 2015-04-01 | 2016-10-01 | Ignis Innovation Inc. | Adjusting display brightness for avoiding overheating and/or accelerated aging |
US10499359B2 (en) * | 2015-05-01 | 2019-12-03 | Itron Networked Solutions, Inc. | Network interface feature to appropriately configure for regulations at new location |
CA2889870A1 (en) | 2015-05-04 | 2016-11-04 | Ignis Innovation Inc. | Optical feedback system |
CA2892714A1 (en) | 2015-05-27 | 2016-11-27 | Ignis Innovation Inc | Memory bandwidth reduction in compensation system |
US10657895B2 (en) | 2015-07-24 | 2020-05-19 | Ignis Innovation Inc. | Pixels and reference circuits and timing techniques |
CA2898282A1 (en) | 2015-07-24 | 2017-01-24 | Ignis Innovation Inc. | Hybrid calibration of current sources for current biased voltage progra mmed (cbvp) displays |
US10373554B2 (en) | 2015-07-24 | 2019-08-06 | Ignis Innovation Inc. | Pixels and reference circuits and timing techniques |
CA2900170A1 (en) | 2015-08-07 | 2017-02-07 | Gholamreza Chaji | Calibration of pixel based on improved reference values |
CN105093807B (zh) * | 2015-09-16 | 2024-01-23 | 京东方科技集团股份有限公司 | 一种掩模板及其制备方法和曝光系统 |
CA2908285A1 (en) | 2015-10-14 | 2017-04-14 | Ignis Innovation Inc. | Driver with multiple color pixel structure |
CA2909813A1 (en) | 2015-10-26 | 2017-04-26 | Ignis Innovation Inc | High ppi pattern orientation |
DE102017222059A1 (de) | 2016-12-06 | 2018-06-07 | Ignis Innovation Inc. | Pixelschaltungen zur Minderung von Hysterese |
KR20180075826A (ko) * | 2016-12-27 | 2018-07-05 | 전자부품연구원 | 대화면 디스플레이용 분할형 tft 소자 구조 및 그의 불량 tft 처리 방법 |
US10714018B2 (en) | 2017-05-17 | 2020-07-14 | Ignis Innovation Inc. | System and method for loading image correction data for displays |
US11025899B2 (en) | 2017-08-11 | 2021-06-01 | Ignis Innovation Inc. | Optical correction systems and methods for correcting non-uniformity of emissive display devices |
EP3688907A4 (en) * | 2017-09-29 | 2021-05-05 | Lenovo (Beijing) Limited | FEEDBACK MESSAGE WITH A SEQUENCE INDICATING FEEDBACK INFORMATION CORRESPONDING TO BLOCKS OF DATA |
US10971078B2 (en) | 2018-02-12 | 2021-04-06 | Ignis Innovation Inc. | Pixel measurement through data line |
WO2020045297A1 (ja) * | 2018-08-30 | 2020-03-05 | 凸版印刷株式会社 | 薄膜トランジスタアレイ |
CN111402814B (zh) * | 2020-03-26 | 2022-04-12 | 昆山国显光电有限公司 | 显示面板、显示面板的驱动方法和显示装置 |
Family Cites Families (75)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US470432A (en) * | 1892-03-08 | Mortimer g | ||
US4356429A (en) | 1980-07-17 | 1982-10-26 | Eastman Kodak Company | Organic electroluminescent cell |
US4539507A (en) | 1983-03-25 | 1985-09-03 | Eastman Kodak Company | Organic electroluminescent devices having improved power conversion efficiencies |
US4885211A (en) | 1987-02-11 | 1989-12-05 | Eastman Kodak Company | Electroluminescent device with improved cathode |
US4720432A (en) | 1987-02-11 | 1988-01-19 | Eastman Kodak Company | Electroluminescent device with organic luminescent medium |
US4769292A (en) | 1987-03-02 | 1988-09-06 | Eastman Kodak Company | Electroluminescent device with modified thin film luminescent zone |
JPH0192576A (ja) | 1987-10-02 | 1989-04-11 | Toyota Motor Corp | 内燃機関の点火装置 |
GB8909011D0 (en) | 1989-04-20 | 1989-06-07 | Friend Richard H | Electroluminescent devices |
US4950950A (en) | 1989-05-18 | 1990-08-21 | Eastman Kodak Company | Electroluminescent device with silazane-containing luminescent zone |
JPH03125186A (ja) * | 1989-10-09 | 1991-05-28 | Tsumura Miotsugu | カラオケ音楽の歌詞表示装置 |
JPH0426886A (ja) * | 1990-05-22 | 1992-01-30 | Matsushita Electric Ind Co Ltd | 平板型表示装置 |
US5059861A (en) | 1990-07-26 | 1991-10-22 | Eastman Kodak Company | Organic electroluminescent device with stabilizing cathode capping layer |
US5047687A (en) | 1990-07-26 | 1991-09-10 | Eastman Kodak Company | Organic electroluminescent device with stabilized cathode |
US5073446A (en) | 1990-07-26 | 1991-12-17 | Eastman Kodak Company | Organic electroluminescent device with stabilizing fused metal particle cathode |
JP3259253B2 (ja) * | 1990-11-28 | 2002-02-25 | 富士通株式会社 | フラット型表示装置の階調駆動方法及び階調駆動装置 |
JP3242941B2 (ja) | 1991-04-30 | 2001-12-25 | 富士ゼロックス株式会社 | アクティブelマトリックスおよびその駆動方法 |
JP3158667B2 (ja) * | 1991-08-01 | 2001-04-23 | セイコーエプソン株式会社 | 液晶表示素子の製造方法及び液晶表示素子の再生方法 |
US5151629A (en) | 1991-08-01 | 1992-09-29 | Eastman Kodak Company | Blue emitting internal junction organic electroluminescent device (I) |
JPH0535207A (ja) * | 1991-08-02 | 1993-02-12 | Fuji Xerox Co Ltd | El駆動装置 |
US5294869A (en) | 1991-12-30 | 1994-03-15 | Eastman Kodak Company | Organic electroluminescent multicolor image display device |
US5294870A (en) | 1991-12-30 | 1994-03-15 | Eastman Kodak Company | Organic electroluminescent multicolor image display device |
JPH06132533A (ja) | 1992-10-19 | 1994-05-13 | Toshiba Corp | Tftアレイ基板の製造方法 |
US5592199A (en) * | 1993-01-27 | 1997-01-07 | Sharp Kabushiki Kaisha | Assembly structure of a flat type device including a panel having electrode terminals disposed on a peripheral portion thereof and method for assembling the same |
US5943032A (en) * | 1993-11-17 | 1999-08-24 | Fujitsu Limited | Method and apparatus for controlling the gray scale of plasma display device |
JP3254335B2 (ja) | 1994-09-08 | 2002-02-04 | 出光興産株式会社 | 有機el素子の封止方法および有機el素子 |
DE69524429T2 (de) | 1994-09-08 | 2002-05-23 | Idemitsu Kosan Co | Verfahren zur abdichtung eines organischen elektrolumineszenten elements und organisches elektrolumineszentes element |
EP0707301A1 (en) * | 1994-09-14 | 1996-04-17 | Texas Instruments Incorporated | Power management for a display device |
DE69535970D1 (de) | 1994-12-14 | 2009-08-06 | Eastman Kodak Co | Elektrolumineszente Vorrichtung mit einer organischen elektrolumineszenten Schicht |
JP3533790B2 (ja) | 1995-11-10 | 2004-05-31 | 富士電機ホールディングス株式会社 | 有機薄膜発光素子 |
JP3733628B2 (ja) * | 1995-11-28 | 2006-01-11 | 株式会社デンソー | 車両用表示装置 |
JPH10134959A (ja) | 1996-10-29 | 1998-05-22 | Sharp Corp | 薄膜elパネル |
KR100226548B1 (ko) | 1996-12-24 | 1999-10-15 | 김영환 | 웨이퍼 습식 처리 장치 |
TW441136B (en) | 1997-01-28 | 2001-06-16 | Casio Computer Co Ltd | An electroluminescent display device and a driving method thereof |
JPH10214060A (ja) * | 1997-01-28 | 1998-08-11 | Casio Comput Co Ltd | 電界発光表示装置およびその駆動方法 |
JP4114216B2 (ja) * | 1997-05-29 | 2008-07-09 | カシオ計算機株式会社 | 表示装置及びその駆動方法 |
DE69841721D1 (de) * | 1997-02-17 | 2010-07-29 | Seiko Epson Corp | Anzeigevorrichtung |
DE69825402T2 (de) * | 1997-03-12 | 2005-08-04 | Seiko Epson Corp. | Pixelschaltung, anzeigevorrichtung und elektronische apparatur mit stromgesteuerter lichtemittierender vorrichtung |
US5952789A (en) * | 1997-04-14 | 1999-09-14 | Sarnoff Corporation | Active matrix organic light emitting diode (amoled) display pixel structure and data load/illuminate circuit therefor |
US6229506B1 (en) * | 1997-04-23 | 2001-05-08 | Sarnoff Corporation | Active matrix light emitting diode pixel structure and concomitant method |
JP3633761B2 (ja) * | 1997-04-30 | 2005-03-30 | パイオニア株式会社 | プラズマディスプレイパネルの駆動装置 |
JPH10312173A (ja) * | 1997-05-09 | 1998-11-24 | Pioneer Electron Corp | 画像表示装置 |
JP3588978B2 (ja) | 1997-06-12 | 2004-11-17 | 凸版印刷株式会社 | 有機薄膜el素子 |
JPH1126169A (ja) | 1997-07-04 | 1999-01-29 | Tdk Corp | 有機el素子およびその製造方法 |
JPH11145136A (ja) | 1997-11-06 | 1999-05-28 | Toshiba Corp | 配線部材およびその製造方法 |
JP3838397B2 (ja) * | 1997-12-02 | 2006-10-25 | 忠弘 大見 | 半導体製造方法 |
JP3629939B2 (ja) * | 1998-03-18 | 2005-03-16 | セイコーエプソン株式会社 | トランジスタ回路、表示パネル及び電子機器 |
JP3252897B2 (ja) * | 1998-03-31 | 2002-02-04 | 日本電気株式会社 | 素子駆動装置および方法、画像表示装置 |
JPH11329719A (ja) | 1998-04-08 | 1999-11-30 | Lg Electronics Inc | 有機電界発光素子 |
JPH11297477A (ja) * | 1998-04-08 | 1999-10-29 | Tdk Corp | 有機elカラーディスプレイ |
WO1999053472A1 (en) * | 1998-04-15 | 1999-10-21 | Cambridge Display Technology Ltd. | Display control device with modes for reduced power consumption |
JPH11338786A (ja) | 1998-05-29 | 1999-12-10 | Pfu Ltd | 主記憶アドレスバス診断方法およびその診断装置並びに記録媒体 |
JP2000113976A (ja) | 1998-10-07 | 2000-04-21 | Tdk Corp | 有機el素子 |
US6274887B1 (en) * | 1998-11-02 | 2001-08-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method therefor |
JP3686769B2 (ja) | 1999-01-29 | 2005-08-24 | 日本電気株式会社 | 有機el素子駆動装置と駆動方法 |
JP3353731B2 (ja) | 1999-02-16 | 2002-12-03 | 日本電気株式会社 | 有機エレクトロルミネッセンス素子駆動装置 |
US6281552B1 (en) * | 1999-03-23 | 2001-08-28 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistors having ldd regions |
JP3259774B2 (ja) | 1999-06-09 | 2002-02-25 | 日本電気株式会社 | 画像表示方法および装置 |
JP4092857B2 (ja) | 1999-06-17 | 2008-05-28 | ソニー株式会社 | 画像表示装置 |
JP2001042822A (ja) | 1999-08-03 | 2001-02-16 | Pioneer Electronic Corp | アクティブマトリクス型表示装置 |
US6392617B1 (en) * | 1999-10-27 | 2002-05-21 | Agilent Technologies, Inc. | Active matrix light emitting diode display |
US6580094B1 (en) | 1999-10-29 | 2003-06-17 | Semiconductor Energy Laboratory Co., Ltd. | Electro luminescence display device |
US6384427B1 (en) | 1999-10-29 | 2002-05-07 | Semiconductor Energy Laboratory Co., Ltd. | Electronic device |
TW525122B (en) | 1999-11-29 | 2003-03-21 | Semiconductor Energy Lab | Electronic device |
TW587239B (en) | 1999-11-30 | 2004-05-11 | Semiconductor Energy Lab | Electric device |
TW493152B (en) | 1999-12-24 | 2002-07-01 | Semiconductor Energy Lab | Electronic device |
TW480727B (en) * | 2000-01-11 | 2002-03-21 | Semiconductor Energy Laboratro | Semiconductor display device |
JP4869491B2 (ja) | 2000-04-18 | 2012-02-08 | 株式会社半導体エネルギー研究所 | 発光装置 |
TW521237B (en) | 2000-04-18 | 2003-02-21 | Semiconductor Energy Lab | Light emitting device |
US6847341B2 (en) | 2000-04-19 | 2005-01-25 | Semiconductor Energy Laboratory Co., Ltd. | Electronic device and method of driving the same |
JP5127099B2 (ja) | 2000-04-26 | 2013-01-23 | 株式会社半導体エネルギー研究所 | 電子装置、表示装置 |
US6611108B2 (en) * | 2000-04-26 | 2003-08-26 | Semiconductor Energy Laboratory Co., Ltd. | Electronic device and driving method thereof |
TW531901B (en) | 2000-04-27 | 2003-05-11 | Semiconductor Energy Lab | Light emitting device |
JP4831889B2 (ja) | 2000-06-22 | 2011-12-07 | 株式会社半導体エネルギー研究所 | 表示装置 |
US7030847B2 (en) | 2000-11-07 | 2006-04-18 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device and electronic device |
US7061451B2 (en) | 2001-02-21 | 2006-06-13 | Semiconductor Energy Laboratory Co., Ltd, | Light emitting device and electronic device |
-
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014041354A (ja) * | 2000-04-26 | 2014-03-06 | Semiconductor Energy Lab Co Ltd | 表示装置及び電子機器 |
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JP6487985B2 (ja) | 2019-03-20 |
US6611108B2 (en) | 2003-08-26 |
JP2011154376A (ja) | 2011-08-11 |
KR20010098894A (ko) | 2001-11-08 |
US20010035863A1 (en) | 2001-11-01 |
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JP2020030415A (ja) | 2020-02-27 |
JP6651587B2 (ja) | 2020-02-19 |
US8514151B2 (en) | 2013-08-20 |
KR20060038412A (ko) | 2006-05-03 |
JP2015018252A (ja) | 2015-01-29 |
JP2017111450A (ja) | 2017-06-22 |
JP6092994B2 (ja) | 2017-03-08 |
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