JP5089576B2 - 自己整合され積極的にスケーリングされたｃｍｏｓデバイスにおけるゲート電極の金属／金属窒化物二重層のｃｍｏｓ構造体及び半導体構造体 - Google Patents

自己整合され積極的にスケーリングされたｃｍｏｓデバイスにおけるゲート電極の金属／金属窒化物二重層のｃｍｏｓ構造体及び半導体構造体 Download PDF

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JP5089576B2
JP5089576B2 JP2008507794A JP2008507794A JP5089576B2 JP 5089576 B2 JP5089576 B2 JP 5089576B2 JP 2008507794 A JP2008507794 A JP 2008507794A JP 2008507794 A JP2008507794 A JP 2008507794A JP 5089576 B2 JP5089576 B2 JP 5089576B2
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metal
work function
layer
cmos structure
cmos
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JP2008537359A5 (enExample
JP2008537359A (ja
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カルティエ、エドアルド、エー
コーペル、マシュー、ダブリュー
ドリス、ブルース、ビー
ジャミー、ラジャラーオ
キム、ヤン、ヒー
リンダー、バリー、ピー
ナラヤナン、ビジャ
パルチュリ、バムシ、ケー
ウォン、キース、クォン、ホン
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International Business Machines Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/0172—Manufacturing their gate conductors
    • H10D84/0177—Manufacturing their gate conductors the gate conductors having different materials or different implants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe

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  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Thin Film Transistor (AREA)
JP2008507794A 2005-04-21 2006-04-18 自己整合され積極的にスケーリングされたｃｍｏｓデバイスにおけるゲート電極の金属／金属窒化物二重層のｃｍｏｓ構造体及び半導体構造体 Expired - Lifetime JP5089576B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/111,592 US7598545B2 (en) 2005-04-21 2005-04-21 Using metal/metal nitride bilayers as gate electrodes in self-aligned aggressively scaled CMOS devices
US11/111,592 2005-04-21
PCT/US2006/014516 WO2006115894A2 (en) 2005-04-21 2006-04-18 Using metal/metal nitride bilayers as gate electrodes in self-aligned aggressively scaled cmos devices

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JP2008537359A JP2008537359A (ja) 2008-09-11
JP2008537359A5 JP2008537359A5 (enExample) 2009-02-19
JP5089576B2 true JP5089576B2 (ja) 2012-12-05

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US (2) US7598545B2 (enExample)
EP (1) EP1872407B1 (enExample)
JP (1) JP5089576B2 (enExample)
CN (1) CN101421839B (enExample)
TW (1) TWI378558B (enExample)
WO (1) WO2006115894A2 (enExample)

Families Citing this family (69)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040036129A1 (en) * 2002-08-22 2004-02-26 Micron Technology, Inc. Atomic layer deposition of CMOS gates with variable work functions
US7473637B2 (en) 2005-07-20 2009-01-06 Micron Technology, Inc. ALD formed titanium nitride films
US7538001B2 (en) * 2005-09-01 2009-05-26 Micron Technology, Inc. Transistor gate forming methods and integrated circuits
US20070164323A1 (en) * 2006-01-18 2007-07-19 Micron Technology, Inc. CMOS gates with intermetallic compound tunable work functions
US20070164367A1 (en) * 2006-01-18 2007-07-19 Micron Technology, Inc. CMOS gates with solid-solution alloy tunable work functions
US7709402B2 (en) 2006-02-16 2010-05-04 Micron Technology, Inc. Conductive layers for hafnium silicon oxynitride films
JP5011921B2 (ja) * 2006-09-29 2012-08-29 富士通セミコンダクター株式会社 半導体集積回路装置及びその製造方法
US20080128821A1 (en) * 2006-12-04 2008-06-05 Texas Instruments Incorporated Semiconductor Device Manufactured Using Passivation of Crystal Domain Interfaces in Hybrid Orientation Technology
US7842977B2 (en) * 2007-02-15 2010-11-30 Qimonda Ag Gate electrode structure, MOS field effect transistors and methods of manufacturing the same
JP4575400B2 (ja) * 2007-05-08 2010-11-04 株式会社東芝 半導体装置の製造方法
US20090072312A1 (en) * 2007-09-14 2009-03-19 Leland Chang Metal High-K (MHK) Dual Gate Stress Engineering Using Hybrid Orientation (HOT) CMOS
JP5288789B2 (ja) * 2007-12-28 2013-09-11 株式会社東芝 半導体装置及びその製造方法
US8097500B2 (en) * 2008-01-14 2012-01-17 International Business Machines Corporation Method and apparatus for fabricating a high-performance band-edge complementary metal-oxide-semiconductor device
JP2009181978A (ja) * 2008-01-29 2009-08-13 Sony Corp 半導体装置およびその製造方法
US7910418B2 (en) * 2008-01-30 2011-03-22 International Business Machines Corporation Complementary metal gate dense interconnect and method of manufacturing
US8138076B2 (en) * 2008-05-12 2012-03-20 Taiwan Semiconductor Manufacturing Co., Ltd. MOSFETs having stacked metal gate electrodes and method
US8592922B2 (en) * 2008-06-09 2013-11-26 Taiwan Semiconductor Manufacturing Company, Ltd. Transistor device and a method of manufacturing the same
US8129797B2 (en) 2008-06-18 2012-03-06 International Business Machines Corporation Work function engineering for eDRAM MOSFETs
JP2010034468A (ja) * 2008-07-31 2010-02-12 Renesas Technology Corp 半導体装置及びその製造方法
US8202773B2 (en) 2008-08-29 2012-06-19 Texas Instruments Incorporated Engineered oxygen profile in metal gate electrode and nitrided high-k gate dielectrics structure for high performance PMOS devices
US8791001B2 (en) 2008-09-08 2014-07-29 Taiwan Semiconductor Manufacturing Company, Ltd. N2 based plasma treatment and ash for HK metal gate protection
JP5286052B2 (ja) 2008-11-28 2013-09-11 株式会社東芝 半導体装置及びその製造方法
US8207582B2 (en) 2009-01-05 2012-06-26 Micron Technology, Inc. Semiconductor devices including dual gate structures
JP5275056B2 (ja) * 2009-01-21 2013-08-28 株式会社東芝 半導体装置の製造方法及び半導体装置
US8026539B2 (en) * 2009-02-18 2011-09-27 Globalfoundries Inc. Metal oxide semiconductor devices having doped silicon-compromising capping layers and methods for fabricating the same
JP2010232426A (ja) * 2009-03-27 2010-10-14 Renesas Electronics Corp 半導体装置およびその製造方法
US20100244206A1 (en) * 2009-03-31 2010-09-30 International Business Machines Corporation Method and structure for threshold voltage control and drive current improvement for high-k metal gate transistors
US8076730B2 (en) 2009-06-09 2011-12-13 Infineon Technologies Ag Transistor level routing
US7989902B2 (en) * 2009-06-18 2011-08-02 International Business Machines Corporation Scavenging metal stack for a high-k gate dielectric
US20100327364A1 (en) * 2009-06-29 2010-12-30 Toshiba America Electronic Components, Inc. Semiconductor device with metal gate
KR101354844B1 (ko) * 2009-07-08 2014-01-22 가부시끼가이샤 도시바 반도체 장치 및 그의 제조 방법
US8173531B2 (en) * 2009-08-04 2012-05-08 International Business Machines Corporation Structure and method to improve threshold voltage of MOSFETS including a high K dielectric
US20110095379A1 (en) * 2009-10-28 2011-04-28 International Business Machines Corporation Scaling of metal gate with aluminum containing metal layer for threshold voltage shift
US20110101427A1 (en) * 2009-10-30 2011-05-05 Thilo Scheiper Transistor including a high-k metal gate electrode structure formed prior to drain/source regions on the basis of a superior implantation masking effect
CN101840887B (zh) * 2009-12-28 2012-01-25 中国科学院微电子研究所 一种半导体器件及其形成方法
JP5721952B2 (ja) 2010-01-07 2015-05-20 株式会社日立国際電気 半導体装置、半導体装置の製造方法および基板処理装置
US9472637B2 (en) 2010-01-07 2016-10-18 Hitachi Kokusai Electric Inc. Semiconductor device having electrode made of high work function material and method of manufacturing the same
JP2011176173A (ja) * 2010-02-25 2011-09-08 Renesas Electronics Corp 半導体装置及びその製造方法
US8435878B2 (en) 2010-04-06 2013-05-07 International Business Machines Corporation Field effect transistor device and fabrication
CN102222616B (zh) * 2010-04-14 2013-04-17 中国科学院微电子研究所 一种半导体器件的制造方法
US8492852B2 (en) 2010-06-02 2013-07-23 International Business Machines Corporation Interface structure for channel mobility improvement in high-k metal gate stack
US8759872B2 (en) 2010-06-22 2014-06-24 Suvolta, Inc. Transistor with threshold voltage set notch and method of fabrication thereof
JP5565804B2 (ja) * 2010-07-28 2014-08-06 独立行政法人産業技術総合研究所 ゲートスタック形成方法
WO2012133433A1 (ja) * 2011-03-28 2012-10-04 独立行政法人産業技術総合研究所 ゲート絶縁膜の形成方法及び半導体装置の製造方法
JP2012231123A (ja) * 2011-04-15 2012-11-22 Hitachi Kokusai Electric Inc 半導体装置、半導体装置の製造方法、基板処理システムおよびプログラム
CN102891111B (zh) * 2011-07-22 2015-01-21 中芯国际集成电路制造(上海)有限公司 双金属栅极晶体管的制造方法
US8766379B2 (en) * 2011-09-22 2014-07-01 Taiwan Semiconductor Manufacturing Company, Ltd. Multi-layer scavenging metal gate stack for ultra-thin interfacial dielectric layer
CN103077947A (zh) * 2011-10-26 2013-05-01 中国科学院微电子研究所 具有双金属栅的cmos器件及其制造方法
CN103077969B (zh) * 2011-10-26 2016-03-30 中国科学院微电子研究所 一种mos器件及其制造方法
CN103137460B (zh) * 2011-11-23 2016-02-10 中国科学院微电子研究所 一种分子尺度界面SiO2的形成和控制方法
US8741718B2 (en) 2012-01-17 2014-06-03 International Business Machines Corporation Local interconnects compatible with replacement gate structures
US9059096B2 (en) 2012-01-23 2015-06-16 International Business Machines Corporation Method to form silicide contact in trenches
US20130241007A1 (en) 2012-03-15 2013-09-19 International Business Machines Corporation Use of band edge gate metals as source drain contacts
US8790973B2 (en) * 2012-04-12 2014-07-29 Globalfoundries Inc. Workfunction metal stacks for a final metal gate
US8865551B2 (en) 2012-06-28 2014-10-21 International Business Machines Corporation Reducing the inversion oxide thickness of a high-k stack fabricated on high mobility semiconductor material
CN103545191B (zh) * 2012-07-16 2016-06-15 中国科学院微电子研究所 栅极结构的形成方法、半导体器件的形成方法以及半导体器件
CN103681273B (zh) * 2012-09-06 2018-04-27 中芯国际集成电路制造(上海)有限公司 金属栅极制作方法
KR101986144B1 (ko) * 2012-12-28 2019-06-05 에스케이하이닉스 주식회사 고유전층과 금속게이트를 갖는 반도체장치 및 그 제조 방법
FR3011382B1 (fr) * 2013-09-27 2019-03-29 Commissariat A L'energie Atomique Et Aux Energies Alternatives Procede de realisation d'un circuit integre
US20150171104A1 (en) * 2013-12-12 2015-06-18 Cypress Semiconductor Corporation Complementary sonos integration into cmos flow
JP6202681B2 (ja) 2014-03-26 2017-09-27 株式会社日立国際電気 基板処理装置、半導体装置の製造方法およびプログラム
US9577062B2 (en) * 2014-10-27 2017-02-21 International Business Machines Corporation Dual metal gate electrode for reducing threshold voltage
JP5944549B2 (ja) * 2015-03-25 2016-07-05 株式会社日立国際電気 半導体装置の製造方法、基板処理装置および半導体装置
WO2018012598A1 (ja) 2016-07-15 2018-01-18 ローム株式会社 半導体装置
CN106129005A (zh) * 2016-09-18 2016-11-16 上海华力微电子有限公司 栅极的制备方法
JP6235686B2 (ja) * 2016-11-30 2017-11-22 ユニサンティス エレクトロニクス シンガポール プライベート リミテッドＵｎｉｓａｎｔｉｓ Ｅｌｅｃｔｒｏｎｉｃｓ Ｓｉｎｇａｐｏｒｅ Ｐｔｅ Ｌｔｄ． 半導体装置、及び半導体装置の製造方法
US10297598B2 (en) 2017-01-16 2019-05-21 International Business Machines Corporation Formation of full metal gate to suppress interficial layer growth
CN108630700A (zh) * 2017-03-22 2018-10-09 中芯国际集成电路制造(上海)有限公司 闪存器件及其制造方法
TWI871500B (zh) 2021-02-08 2025-02-01 美商應用材料股份有限公司 以偶極膜工程化的mosfet閘極

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62112373A (ja) * 1985-11-12 1987-05-23 Seiko Instr & Electronics Ltd Ｍｉｓトランジスタ−の製造方法
JPH0697166A (ja) * 1992-09-11 1994-04-08 Sony Corp 電極構造およびその製造方法
US6261887B1 (en) * 1997-08-28 2001-07-17 Texas Instruments Incorporated Transistors with independently formed gate structures and method
US6166417A (en) * 1998-06-30 2000-12-26 Intel Corporation Complementary metal gates and a process for implementation
JP4237332B2 (ja) * 1999-04-30 2009-03-11 株式会社東芝 半導体装置の製造方法
JP2001077355A (ja) * 1999-08-13 2001-03-23 Texas Instr Inc <Ti> トランジスタを形成する方法
JP2001060630A (ja) * 1999-08-23 2001-03-06 Nec Corp 半導体装置の製造方法
US6373111B1 (en) 1999-11-30 2002-04-16 Intel Corporation Work function tuning for MOSFET gate electrodes
US6407435B1 (en) * 2000-02-11 2002-06-18 Sharp Laboratories Of America, Inc. Multilayer dielectric stack and method
WO2001071807A1 (en) * 2000-03-24 2001-09-27 Fujitsu Limited Semiconductor device and method of manufacture thereof
JP2001274389A (ja) * 2000-03-28 2001-10-05 Toshiba Corp 半導体装置およびその製造方法
JP2001298192A (ja) * 2000-04-13 2001-10-26 Seiko Epson Corp 半導体装置およびその製造方法
US6444512B1 (en) * 2000-06-12 2002-09-03 Motorola, Inc. Dual metal gate transistors for CMOS process
JP2002217313A (ja) * 2000-11-30 2002-08-02 Texas Instruments Inc 金属及び対応する金属珪化物から形成した各ゲートを有する相補形トランジスタ
KR100399356B1 (ko) * 2001-04-11 2003-09-26 삼성전자주식회사 듀얼 게이트를 가지는 씨모스형 반도체 장치 형성 방법
JP4044306B2 (ja) * 2001-07-26 2008-02-06 株式会社東芝 半導体装置及びその製造方法
JP3974507B2 (ja) * 2001-12-27 2007-09-12 株式会社東芝 半導体装置の製造方法
US6696345B2 (en) * 2002-01-07 2004-02-24 Intel Corporation Metal-gate electrode for CMOS transistor applications
JP2004022690A (ja) * 2002-06-14 2004-01-22 Seiko Epson Corp 半導体装置及びその製造方法
US6689676B1 (en) * 2002-07-26 2004-02-10 Motorola, Inc. Method for forming a semiconductor device structure in a semiconductor layer
US7122414B2 (en) * 2002-12-03 2006-10-17 Asm International, Inc. Method to fabricate dual metal CMOS devices
US6858524B2 (en) 2002-12-03 2005-02-22 Asm International, Nv Method of depositing barrier layer for metal gates
US6849509B2 (en) 2002-12-09 2005-02-01 Intel Corporation Methods of forming a multilayer stack alloy for work function engineering
JP4143505B2 (ja) * 2003-09-03 2008-09-03 株式会社半導体理工学研究センター Ｍｏｓ型半導体装置及びその製造方法
US6921711B2 (en) * 2003-09-09 2005-07-26 International Business Machines Corporation Method for forming metal replacement gate of high performance
KR100502426B1 (ko) * 2003-09-18 2005-07-20 삼성전자주식회사 듀얼 게이트를 갖는 반도체 소자 및 그 형성 방법

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TW200707735A (en) 2007-02-16
CN101421839A (zh) 2009-04-29
WO2006115894A3 (en) 2008-11-13
US20060237796A1 (en) 2006-10-26
US20090302399A1 (en) 2009-12-10
EP1872407A2 (en) 2008-01-02
EP1872407A4 (en) 2011-09-14
JP2008537359A (ja) 2008-09-11
CN101421839B (zh) 2013-07-10
US7999323B2 (en) 2011-08-16
WO2006115894A2 (en) 2006-11-02
US7598545B2 (en) 2009-10-06
EP1872407B1 (en) 2013-09-11
TWI378558B (en) 2012-12-01

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