CN101421839B - 使用金属/金属氮化物双层结构作为自对准强按比例缩放cmos器件中的栅电极 - Google Patents

使用金属/金属氮化物双层结构作为自对准强按比例缩放cmos器件中的栅电极 Download PDF

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Publication number
CN101421839B
CN101421839B CN200680013110.5A CN200680013110A CN101421839B CN 101421839 B CN101421839 B CN 101421839B CN 200680013110 A CN200680013110 A CN 200680013110A CN 101421839 B CN101421839 B CN 101421839B
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China
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cmos
metallicity
layer
metal oxide
oxide semiconductor
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Expired - Lifetime
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English (en)
Chinese (zh)
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CN101421839A (zh
Inventor
艾德华·A.·卡蒂尔
马修·W.·库贝尔
布鲁斯·B.·多里斯
拉加劳·亚米
金永锡
巴里·P.·林德尔
维加伊·纳拉亚南
瓦姆西·K.·帕鲁丘里
凯斯·洸·汉·黄
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Taiwan Semiconductor Manufacturing Co TSMC Ltd
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International Business Machines Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/0172—Manufacturing their gate conductors
    • H10D84/0177—Manufacturing their gate conductors the gate conductors having different materials or different implants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe

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  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Thin Film Transistor (AREA)
CN200680013110.5A 2005-04-21 2006-04-18 使用金属/金属氮化物双层结构作为自对准强按比例缩放cmos器件中的栅电极 Expired - Lifetime CN101421839B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/111,592 US7598545B2 (en) 2005-04-21 2005-04-21 Using metal/metal nitride bilayers as gate electrodes in self-aligned aggressively scaled CMOS devices
US11/111,592 2005-04-21
PCT/US2006/014516 WO2006115894A2 (en) 2005-04-21 2006-04-18 Using metal/metal nitride bilayers as gate electrodes in self-aligned aggressively scaled cmos devices

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CN101421839A CN101421839A (zh) 2009-04-29
CN101421839B true CN101421839B (zh) 2013-07-10

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US (2) US7598545B2 (enExample)
EP (1) EP1872407B1 (enExample)
JP (1) JP5089576B2 (enExample)
CN (1) CN101421839B (enExample)
TW (1) TWI378558B (enExample)
WO (1) WO2006115894A2 (enExample)

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Also Published As

Publication number Publication date
TW200707735A (en) 2007-02-16
CN101421839A (zh) 2009-04-29
WO2006115894A3 (en) 2008-11-13
US20060237796A1 (en) 2006-10-26
US20090302399A1 (en) 2009-12-10
EP1872407A2 (en) 2008-01-02
EP1872407A4 (en) 2011-09-14
JP2008537359A (ja) 2008-09-11
US7999323B2 (en) 2011-08-16
WO2006115894A2 (en) 2006-11-02
US7598545B2 (en) 2009-10-06
EP1872407B1 (en) 2013-09-11
TWI378558B (en) 2012-12-01
JP5089576B2 (ja) 2012-12-05

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