JP4970401B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP4970401B2
JP4970401B2 JP2008267102A JP2008267102A JP4970401B2 JP 4970401 B2 JP4970401 B2 JP 4970401B2 JP 2008267102 A JP2008267102 A JP 2008267102A JP 2008267102 A JP2008267102 A JP 2008267102A JP 4970401 B2 JP4970401 B2 JP 4970401B2
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Prior art keywords
lead
semiconductor
semiconductor device
lead frame
mounting region
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JP2008267102A
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Japanese (ja)
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JP2009117819A (ja
JP2009117819A5 (enExample
Inventor
善秋 後藤
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Toshiba Corp
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Toshiba Corp
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    • H01L23/3107Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
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    • H01L2924/181Encapsulation

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Lead Frames For Integrated Circuits (AREA)
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Families Citing this family (8)

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Publication number Priority date Publication date Assignee Title
US20090096073A1 (en) * 2007-10-16 2009-04-16 Kabushiki Kaisha Toshiba Semiconductor device and lead frame used for the same
US8004071B2 (en) 2007-12-27 2011-08-23 Kabushiki Kaisha Toshiba Semiconductor memory device
JP5275019B2 (ja) * 2008-12-26 2013-08-28 株式会社東芝 半導体装置
JP5361426B2 (ja) 2009-02-05 2013-12-04 株式会社東芝 半導体デバイス
KR101685057B1 (ko) * 2010-01-22 2016-12-09 삼성전자주식회사 반도체 소자의 적층 패키지
JP5032623B2 (ja) * 2010-03-26 2012-09-26 株式会社東芝 半導体記憶装置
JP5924313B2 (ja) * 2012-08-06 2016-05-25 株式会社デンソー ダイオード
JP6680274B2 (ja) * 2017-06-27 2020-04-15 日亜化学工業株式会社 発光装置及び樹脂付リードフレーム

Family Cites Families (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4079511A (en) * 1976-07-30 1978-03-21 Amp Incorporated Method for packaging hermetically sealed integrated circuit chips on lead frames
US4102209A (en) * 1977-06-17 1978-07-25 United Technologies Corporation Temperature compensated vibrating cylinder pressure transducer
JP2862557B2 (ja) * 1989-03-20 1999-03-03 宮崎沖電気株式会社 半導体装置
JPH082537B2 (ja) 1989-08-25 1996-01-17 トリニティ工業株式会社 熱処理装置
JPH03136267A (ja) * 1989-10-20 1991-06-11 Texas Instr Japan Ltd 半導体装置及びその製造方法
JPH083929Y2 (ja) * 1989-12-14 1996-01-31 株式会社小糸製作所 車輌用灯具
JPH0395661U (enExample) * 1990-01-12 1991-09-30
JPH04174548A (ja) * 1990-11-07 1992-06-22 Nec Corp リードフレーム
US5455454A (en) * 1992-03-28 1995-10-03 Samsung Electronics Co., Ltd. Semiconductor lead frame having a down set support member formed by inwardly extending leads within a central aperture
EP0595021A1 (en) * 1992-10-28 1994-05-04 International Business Machines Corporation Improved lead frame package for electronic devices
JPH06204390A (ja) * 1993-01-07 1994-07-22 Fujitsu Ltd 半導体装置
JPH06244352A (ja) * 1993-02-19 1994-09-02 Shinko Electric Ind Co Ltd リードフレーム及び半導体装置の製造方法
JP3082507B2 (ja) 1993-04-07 2000-08-28 日産自動車株式会社 移動体の画像処理装置
JP3013135B2 (ja) * 1993-11-16 2000-02-28 株式会社三井ハイテック 半導体装置用リードフレームの製造方法
JP2972096B2 (ja) * 1994-11-25 1999-11-08 シャープ株式会社 樹脂封止型半導体装置
JP2756436B2 (ja) * 1995-12-28 1998-05-25 日立超エル・エス・アイ・エンジニアリング 株式会社 半導体装置およびその製造方法
KR100203934B1 (ko) * 1996-02-17 1999-06-15 윤종용 패턴닝된 리드프레임을 이용한 멀티 칩 패키지
JP3078526B2 (ja) * 1998-08-12 2000-08-21 宮崎沖電気株式会社 樹脂封止型半導体装置
US6313527B1 (en) * 1998-12-10 2001-11-06 United Microelectronics Corp. Dual-dies packaging structure and packaging method
JP3813788B2 (ja) 2000-04-14 2006-08-23 株式会社ルネサステクノロジ 半導体装置及びその製造方法
US6552416B1 (en) * 2000-09-08 2003-04-22 Amkor Technology, Inc. Multiple die lead frame package with enhanced die-to-die interconnect routing using internal lead trace wiring
JP3082507U (ja) 2001-06-07 2001-12-14 華東先進電子股▲分▼有限公司 ダブルサイドチップパッケージ
JP3793752B2 (ja) * 2002-12-16 2006-07-05 沖電気工業株式会社 半導体装置
US7102209B1 (en) 2003-08-27 2006-09-05 National Semiconductor Corporation Substrate for use in semiconductor manufacturing and method of making same
JP2005268533A (ja) * 2004-03-18 2005-09-29 Shinko Electric Ind Co Ltd 積層型半導体装置
JP4372022B2 (ja) 2004-04-27 2009-11-25 株式会社東芝 半導体装置
US7348660B2 (en) * 2005-07-29 2008-03-25 Infineon Technologies Flash Gmbh & Co. Kg Semiconductor package based on lead-on-chip architecture, the fabrication thereof and a leadframe for implementing in a semiconductor package
JP4916745B2 (ja) * 2006-03-28 2012-04-18 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
US8357566B2 (en) * 2006-08-25 2013-01-22 Micron Technology, Inc. Pre-encapsulated lead frames for microelectronic device packages, and associated methods
US20090096073A1 (en) * 2007-10-16 2009-04-16 Kabushiki Kaisha Toshiba Semiconductor device and lead frame used for the same
JP6164895B2 (ja) * 2013-04-02 2017-07-19 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
US9978675B2 (en) * 2015-11-20 2018-05-22 Canon Kabushiki Kaisha Package, electronic component, and electronic apparatus

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US8618643B2 (en) 2013-12-31
US20110260312A1 (en) 2011-10-27
US20190139849A1 (en) 2019-05-09
US10199300B2 (en) 2019-02-05
US9589870B2 (en) 2017-03-07
US20200388547A1 (en) 2020-12-10
US20170154832A1 (en) 2017-06-01
US20090096073A1 (en) 2009-04-16
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US20160027720A1 (en) 2016-01-28
US9177900B2 (en) 2015-11-03
US20140077348A1 (en) 2014-03-20
US11688659B2 (en) 2023-06-27
US10777479B2 (en) 2020-09-15
JP4970610B2 (ja) 2012-07-11

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