JP4903199B2 - 光デバイス及びランプ - Google Patents
光デバイス及びランプ Download PDFInfo
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- JP4903199B2 JP4903199B2 JP2008515705A JP2008515705A JP4903199B2 JP 4903199 B2 JP4903199 B2 JP 4903199B2 JP 2008515705 A JP2008515705 A JP 2008515705A JP 2008515705 A JP2008515705 A JP 2008515705A JP 4903199 B2 JP4903199 B2 JP 4903199B2
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- 239000004020 conductor Substances 0.000 claims description 10
- 239000003570 air Substances 0.000 claims description 9
- 239000012080 ambient air Substances 0.000 claims description 9
- 239000004033 plastic Substances 0.000 claims description 6
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- 238000010276 construction Methods 0.000 claims 1
- 239000000463 material Substances 0.000 description 38
- ALDJIKXAHSDLLB-UHFFFAOYSA-N 1,2-dichloro-3-(2,5-dichlorophenyl)benzene Chemical compound ClC1=CC=C(Cl)C(C=2C(=C(Cl)C=CC=2)Cl)=C1 ALDJIKXAHSDLLB-UHFFFAOYSA-N 0.000 description 14
- RIMXLXBUOQMDHV-UHFFFAOYSA-N 1,2-dichloro-4-(2-chlorophenyl)benzene Chemical compound C1=C(Cl)C(Cl)=CC=C1C1=CC=CC=C1Cl RIMXLXBUOQMDHV-UHFFFAOYSA-N 0.000 description 10
- 229910052782 aluminium Inorganic materials 0.000 description 9
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 9
- 238000000034 method Methods 0.000 description 7
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 7
- 229910010271 silicon carbide Inorganic materials 0.000 description 7
- 239000006260 foam Substances 0.000 description 6
- MTCPZNVSDFCBBE-UHFFFAOYSA-N 1,3,5-trichloro-2-(2,6-dichlorophenyl)benzene Chemical group ClC1=CC(Cl)=CC(Cl)=C1C1=C(Cl)C=CC=C1Cl MTCPZNVSDFCBBE-UHFFFAOYSA-N 0.000 description 5
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 239000004593 Epoxy Substances 0.000 description 3
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- 238000005229 chemical vapour deposition Methods 0.000 description 3
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- 150000004767 nitrides Chemical class 0.000 description 3
- 230000004044 response Effects 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 238000003491 array Methods 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- RVWLHPJFOKUPNM-UHFFFAOYSA-N 1,2,4,5-tetrachloro-3-(2,3-dichlorophenyl)benzene Chemical compound ClC1=CC=CC(C=2C(=C(Cl)C=C(Cl)C=2Cl)Cl)=C1Cl RVWLHPJFOKUPNM-UHFFFAOYSA-N 0.000 description 1
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- FCOUFRZOMZERRM-UHFFFAOYSA-N [O-2].[Zn+2].[C+4].[O-2].[O-2] Chemical compound [O-2].[Zn+2].[C+4].[O-2].[O-2] FCOUFRZOMZERRM-UHFFFAOYSA-N 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- -1 aluminum or copper Chemical class 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 230000001413 cellular effect Effects 0.000 description 1
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- 238000009792 diffusion process Methods 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910021397 glassy carbon Inorganic materials 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000005297 material degradation process Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/641—Heat extraction or cooling elements characterized by the materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/642—Heat extraction or cooling elements characterized by the shape
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Arrangement Of Elements, Cooling, Sealing, Or The Like Of Lighting Devices (AREA)
- Led Device Packages (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Description
Claims (25)
- 回路板に取り付けられた固体光源と、
前記固体光源からの光の少なくとも一部を反射して、方向性のある光放出にするために、前記回路板に取り付けられた反射体と、
該固体光源からの熱がその中に伝達するように前記固体光源に熱接触して配置され、少なくとも部分的に多孔質材料領域を備え、該多孔質材料領域は、複数の相互に連結した細孔を有する3次元細孔構造の形をとる熱伝導性材料を備え、前記3次元細孔構造の表面は、バルクヒートシンクに比べて、熱が周囲空気中に放散する表面積の増大をもたらす第1のヒートシンク及び第2のヒートシンクと
を備え、
前記第1のヒートシンクは前記反射体に取り付けられ、前記第2のヒートシンクは前記回路板に取り付けられ、
前記複数の相互に連結した細孔の少なくともいくつかは、周囲への連続する空気の流路を形成することを特徴とする光デバイス。 - 前記回路板をさらに備え、前記第1のヒートシンクは、前記固体光源からの熱が前記第1のヒートシンク内に少なくとも部分的に伝達するように、前記回路板に取り付けられていることを特徴とする請求項1に記載の光デバイス。
- 前記第1のヒートシンクは、段階的な多孔質材料領域を有し、該多孔質材料領域の一部分は、該多孔質材料領域の残りの部分よりも高密度の細孔構造を有することを特徴とする請求項1または2に記載の光デバイス。
- 前記回路板の一部分が前記第1のヒートシンクと前記第2のヒートシンクの間にあることを特徴とする請求項1に記載の光デバイス。
- 前記固体光源は、該反射体が前記固体光源からの前記光の少なくとも一部を反射して、方向性のある光放出にするように前記回路板に取り付けられ、前記第1のヒートシンクは、前記固体光源からの熱が前記第1のヒートシンク内に伝達するように前記回路板に取り付けられていることを特徴とする請求項1に記載の光デバイス。
- 前記多孔質材料領域は、周囲空気中への熱の放射を増大させるために、暗色被覆をさらに備えていることを特徴とする請求項1から5のいずれか一項に記載の光デバイス。
- 前記ヒートシンクの任意のより高密度の多孔質領域は、固体金属を備えていることを特徴とする請求項3に記載の光デバイス。
- 前記ヒートシンクの任意のより高密度の多孔質領域は、多孔質材料の一部分内に注入されたサーマルペーストを備えていることを特徴とする請求項1に記載の光デバイス。
- 回路板に取り付けられた固体光源と、
該固体光源からの光の少なくとも一部を反射して、方向性のある光放出にするために、前記回路板に取り付けられた反射体と、
前記固体光源に電力を供給するための接点と、
各々が3次元細孔構造の形をとる熱伝導性材料製の多孔質材料領域を少なくとも部分的に備える第1及び第2のヒートシンクであって、前記第1のヒートシンクは前記反射体に付着され、前記第2のヒートシンクは前記回路板に付着されている第1及び第2のヒートシンクと
を備えていることを特徴とするランプ。 - 前記反射体は金属製であり、前記固体光源からの熱は、前記反射体を介して前記第1のヒートシンク内に伝達することを特徴とする請求項9に記載のランプ。
- 前記反射体は、反射被覆プラスチック製であり、前記反射体と前記第1のヒートシンクの間に、熱が前記固体光源から前記第1のヒートシンク内にそれを介して伝達する熱伝導性経路をさらに備えていることを特徴とする請求項9に記載のランプ。
- 前記固体光源からの熱は、前記第2のヒートシンク内に前記回路板を介して伝達することを特徴とする請求項9に記載のランプ。
- 前記固体光源からの熱を前記第2のヒートシンクに伝導する1つ又は複数の熱伝導性ビアを、前記回路板を貫通してさらに備えていることを特徴とする請求項9に記載のランプ。
- 前記第2のヒートシンクと前記回路板の間に熱伝導性層をさらに備え、前記熱伝導性層は、前記ビア及び前記第2のヒートシンクに熱接触して、前記ビアからの熱を前記第2のヒートシンク全体にわたって拡散することを特徴とする請求項13に記載のランプ。
- 前記第1又は第2のヒートシンクの前記多孔質材料領域は、段階的であり、前記多孔質材料領域の一部分は、該多孔質材料領域の残りの部分よりも高密度の細孔構造を有することを特徴とする請求項9に記載のランプ。
- 前記多孔質材料領域は、周囲空気中への熱の放射を増大させるために、暗色被覆をさらに備えていることを特徴とする請求項9に記載のランプ。
- 前記ヒートシンクの非多孔質領域の少なくとも一部分は、固体金属を備えていることを特徴とする請求項9に記載のランプ。
- 前記ヒートシンクの非多孔質領域の少なくとも一部分は、多孔質材料中に注入されたサーマルペーストを備えていることを特徴とする請求項9に記載のランプ。
- 前記固体光源は、発光ダイオード、複数の発光ダイオード、固体レーザ、及び複数の固体レーザからなる群から1つを備えていることを特徴とする請求項9に記載のランプ。
- 回路板に取り付けられた半導体デバイスと、
前記半導体デバイスからの光の少なくとも一部を反射して、方向性のある光放出にするために、前記回路板に取り付けられた反射体と、
該半導体デバイスからの熱がその中に伝達するように前記半導体デバイスに熱接触して配置された、少なくとも部分的に多孔質材料領域を備え、該多孔質材料領域は、複数の相互に連結した細孔を有する3次元細孔構造の形をとる熱伝導性材料を備え、前記3次元細孔構造の表面は、熱が周辺空気中に放散する表面積をもたらす第1のヒートシンク及び第2のヒートシンクと
を備え、
前記第1のヒートシンクは前記反射体に取り付けられ、前記第2のヒートシンクは前記回路板に取り付けられ、
前記複数の相互に連結した細孔の少なくともいくつかは、周囲への連続する空気の流路を形成することを特徴とする高電力半導体構成要素構造。 - 前記回路板をさらに備え前記第1のヒートシンクは、前記半導体デバイスからの熱が前記第1のヒートシンク内に伝達するように前記回路板に取り付けられていることを特徴とする請求項20に記載の高電力半導体構成要素構造。
- 前記第1のヒートシンクは、段階的な多孔質材料領域を有し、該多孔質材料領域の一部分は、該多孔質材料領域の残りの部分よりも高密度の細孔構造を有することを特徴とする請求項20または21に記載の高電力半導体構成要素構造。
- 前記半導体デバイスは固体光源を備え、前記固体光源は、前記反射体が前記固体光源からの前記光の少なくとも一部を反射して、方向性のある光放出にするように前記回路板に取り付けられていることを特徴とする請求項20に記載の高電力半導体構成要素構造。
- 前記第1のヒートシンクは、前記固体光源からの熱が前記第1のヒートシンク内に伝達するように、前記回路板に取り付けられていることを特徴とする請求項23に記載の高電力半導体構成要素構造。
- 前記回路板の一部分が前記第1のヒートシンクと前記第2のヒートシンクの間にあることを特徴とする請求項21に記載の高電力半導体構成要素構造。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/149,999 US9412926B2 (en) | 2005-06-10 | 2005-06-10 | High power solid-state lamp |
US11/149,999 | 2005-06-10 | ||
PCT/US2006/017225 WO2006135502A1 (en) | 2005-06-10 | 2006-05-03 | High power solid-state lamp |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011231319A Division JP2012054584A (ja) | 2005-06-10 | 2011-10-21 | 光デバイス及びランプ |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2008544489A JP2008544489A (ja) | 2008-12-04 |
JP4903199B2 true JP4903199B2 (ja) | 2012-03-28 |
Family
ID=36941959
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Application Number | Title | Priority Date | Filing Date |
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JP2008515705A Active JP4903199B2 (ja) | 2005-06-10 | 2006-05-03 | 光デバイス及びランプ |
JP2011231319A Pending JP2012054584A (ja) | 2005-06-10 | 2011-10-21 | 光デバイス及びランプ |
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Application Number | Title | Priority Date | Filing Date |
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JP2011231319A Pending JP2012054584A (ja) | 2005-06-10 | 2011-10-21 | 光デバイス及びランプ |
Country Status (5)
Country | Link |
---|---|
US (1) | US9412926B2 (ja) |
JP (2) | JP4903199B2 (ja) |
DE (1) | DE112006001536T5 (ja) |
TW (1) | TW200730766A (ja) |
WO (1) | WO2006135502A1 (ja) |
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US7910943B2 (en) * | 2005-11-01 | 2011-03-22 | Nexxus Lighting, Inc. | Light emitting diode fixture and heat sink |
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US8735920B2 (en) | 2006-07-31 | 2014-05-27 | Cree, Inc. | Light emitting diode package with optical element |
US9711703B2 (en) | 2007-02-12 | 2017-07-18 | Cree Huizhou Opto Limited | Apparatus, system and method for use in mounting electronic elements |
US8866169B2 (en) | 2007-10-31 | 2014-10-21 | Cree, Inc. | LED package with increased feature sizes |
US10256385B2 (en) | 2007-10-31 | 2019-04-09 | Cree, Inc. | Light emitting die (LED) packages and related methods |
CN101220934A (zh) * | 2008-01-31 | 2008-07-16 | 宁波安迪光电科技有限公司 | Led照明装置 |
DE102009029535A1 (de) | 2008-09-22 | 2010-03-25 | Ceramtec Ag | Lampe mit mindestens einer Leuchtdiode |
US8215799B2 (en) * | 2008-09-23 | 2012-07-10 | Lsi Industries, Inc. | Lighting apparatus with heat dissipation system |
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2005
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TW200730766A (en) | 2007-08-16 |
JP2008544489A (ja) | 2008-12-04 |
US20080007953A1 (en) | 2008-01-10 |
JP2012054584A (ja) | 2012-03-15 |
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