JP4813908B2 - 低アーク放電性、円筒形ガスアウトレット及び成形表面を有するプラズマリアクタ・オーバーヘッド・ソースパワー電極 - Google Patents

低アーク放電性、円筒形ガスアウトレット及び成形表面を有するプラズマリアクタ・オーバーヘッド・ソースパワー電極 Download PDF

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JP4813908B2
JP4813908B2 JP2006019544A JP2006019544A JP4813908B2 JP 4813908 B2 JP4813908 B2 JP 4813908B2 JP 2006019544 A JP2006019544 A JP 2006019544A JP 2006019544 A JP2006019544 A JP 2006019544A JP 4813908 B2 JP4813908 B2 JP 4813908B2
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electrode
plasma
gas
protrusion
impedance
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JP2006210929A (ja
JP2006210929A5 (enExample
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エー． ブッシュバーガー ジュニア． ダグラス
ジェイ． ホフマン ダニエル
レジェルマン オルガ
カルダッチ ジェイムス
啓治 堀岡
グヨー ヤン ジャン
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Applied Materials Inc
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Applied Materials Inc
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • E—FIXED CONSTRUCTIONS
    • E01—CONSTRUCTION OF ROADS, RAILWAYS, OR BRIDGES
    • E01C—CONSTRUCTION OF, OR SURFACES FOR, ROADS, SPORTS GROUNDS, OR THE LIKE; MACHINES OR AUXILIARY TOOLS FOR CONSTRUCTION OR REPAIR
    • E01C5/00—Pavings made of prefabricated single units
    • E01C5/22—Pavings made of prefabricated single units made of units composed of a mixture of materials covered by two or more of groups E01C5/008, E01C5/02 - E01C5/20 except embedded reinforcing materials
    • E01C5/226—Pavings made of prefabricated single units made of units composed of a mixture of materials covered by two or more of groups E01C5/008, E01C5/02 - E01C5/20 except embedded reinforcing materials having an upper layer of rubber, with or without inserts of other materials; with rubber inserts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H01J37/32183—Matching circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • E—FIXED CONSTRUCTIONS
    • E01—CONSTRUCTION OF ROADS, RAILWAYS, OR BRIDGES
    • E01C—CONSTRUCTION OF, OR SURFACES FOR, ROADS, SPORTS GROUNDS, OR THE LIKE; MACHINES OR AUXILIARY TOOLS FOR CONSTRUCTION OR REPAIR
    • E01C15/00—Pavings specially adapted for footpaths, sidewalks or cycle tracks

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Architecture (AREA)
  • Civil Engineering (AREA)
  • Structural Engineering (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
JP2006019544A 2005-01-28 2006-01-27 低アーク放電性、円筒形ガスアウトレット及び成形表面を有するプラズマリアクタ・オーバーヘッド・ソースパワー電極 Active JP4813908B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/046538 2005-01-28
US11/046,538 US7196283B2 (en) 2000-03-17 2005-01-28 Plasma reactor overhead source power electrode with low arcing tendency, cylindrical gas outlets and shaped surface

Related Child Applications (1)

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JP2008183112A Division JP2009004796A (ja) 2005-01-28 2008-07-14 低アーク放電性、円筒形ガスアウトレット及び成形表面を有するプラズマリアクタ・オーバヘッド・ソースパワー電極

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JP2006210929A JP2006210929A (ja) 2006-08-10
JP2006210929A5 JP2006210929A5 (enExample) 2008-08-28
JP4813908B2 true JP4813908B2 (ja) 2011-11-09

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JP2008183112A Withdrawn JP2009004796A (ja) 2005-01-28 2008-07-14 低アーク放電性、円筒形ガスアウトレット及び成形表面を有するプラズマリアクタ・オーバヘッド・ソースパワー電極

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US (1) US7196283B2 (enExample)
EP (1) EP1691396A3 (enExample)
JP (2) JP4813908B2 (enExample)
KR (1) KR100854620B1 (enExample)
CN (1) CN1812684A (enExample)
MY (1) MY137871A (enExample)
TW (1) TWI348334B (enExample)

Families Citing this family (147)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070048882A1 (en) * 2000-03-17 2007-03-01 Applied Materials, Inc. Method to reduce plasma-induced charging damage
US8048806B2 (en) * 2000-03-17 2011-11-01 Applied Materials, Inc. Methods to avoid unstable plasma states during a process transition
JP3897620B2 (ja) * 2002-03-14 2007-03-28 三菱重工業株式会社 高周波電力供給構造およびそれを備えたプラズマｃｖｄ装置
US7507670B2 (en) * 2004-12-23 2009-03-24 Lam Research Corporation Silicon electrode assembly surface decontamination by acidic solution
ITMI20050962A1 (it) * 2005-05-25 2006-11-26 Lpe Spa Dispositivo per introurre gas di reazione in una camera di reazione e reattore epitassiale che lo utilizza
US20070029283A1 (en) * 2005-08-02 2007-02-08 Micron Technology, Inc. Etching processes and methods of forming semiconductor constructions
US7651585B2 (en) 2005-09-26 2010-01-26 Lam Research Corporation Apparatus for the removal of an edge polymer from a substrate and methods therefor
US8226769B2 (en) * 2006-04-27 2012-07-24 Applied Materials, Inc. Substrate support with electrostatic chuck having dual temperature zones
US9275887B2 (en) 2006-07-20 2016-03-01 Applied Materials, Inc. Substrate processing with rapid temperature gradient control
US7854820B2 (en) * 2006-10-16 2010-12-21 Lam Research Corporation Upper electrode backing member with particle reducing features
US7758763B2 (en) * 2006-10-31 2010-07-20 Applied Materials, Inc. Plasma for resist removal and facet control of underlying features
CN101536154B (zh) * 2006-11-09 2010-08-11 株式会社爱发科 遮蔽膜的形成方法
US7976634B2 (en) * 2006-11-21 2011-07-12 Applied Materials, Inc. Independent radiant gas preheating for precursor disassociation control and gas reaction kinetics in low temperature CVD systems
US8702866B2 (en) 2006-12-18 2014-04-22 Lam Research Corporation Showerhead electrode assembly with gas flow modification for extended electrode life
US7674394B2 (en) * 2007-02-26 2010-03-09 Applied Materials, Inc. Plasma process for inductively coupling power through a gas distribution plate while adjusting plasma distribution
US20080236490A1 (en) * 2007-03-29 2008-10-02 Alexander Paterson Plasma reactor with an overhead inductive antenna and an overhead gas distribution showerhead
KR101119627B1 (ko) 2007-03-29 2012-03-07 도쿄엘렉트론가부시키가이샤 플라즈마 처리 장치
US8069817B2 (en) * 2007-03-30 2011-12-06 Lam Research Corporation Showerhead electrodes and showerhead electrode assemblies having low-particle performance for semiconductor material processing apparatuses
US8435379B2 (en) 2007-05-08 2013-05-07 Applied Materials, Inc. Substrate cleaning chamber and cleaning and conditioning methods
US7582265B2 (en) * 2007-06-28 2009-09-01 Plasma Waste Recycling, Inc. Gas conduit for plasma gasification reactors
US7807222B2 (en) * 2007-09-17 2010-10-05 Asm International N.V. Semiconductor processing parts having apertures with deposited coatings and methods for forming the same
JP5539884B2 (ja) * 2007-10-01 2014-07-02 テーエーエル・ソーラー・アーゲー プラズマ反応器
KR101381208B1 (ko) * 2007-11-20 2014-04-04 주성엔지니어링(주) 박막처리장치
US8418649B2 (en) * 2007-12-19 2013-04-16 Lam Research Corporation Composite showerhead electrode assembly for a plasma processing apparatus
US20090162262A1 (en) * 2007-12-19 2009-06-25 Applied Material, Inc. Plasma reactor gas distribution plate having path splitting manifold side-by-side with showerhead
US20090162261A1 (en) * 2007-12-19 2009-06-25 Kallol Baera Plasma reactor gas distribution plate having a vertically stacked path splitting manifold
US20090159213A1 (en) * 2007-12-19 2009-06-25 Applied Materials, Inc. Plasma reactor gas distribution plate having a path splitting manifold immersed within a showerhead
KR101553423B1 (ko) * 2007-12-19 2015-09-15 램 리써치 코포레이션 반도체 진공 프로세싱 장치용 필름 점착제
US20090159002A1 (en) * 2007-12-19 2009-06-25 Kallol Bera Gas distribution plate with annular plenum having a sloped ceiling for uniform distribution
US8512509B2 (en) * 2007-12-19 2013-08-20 Applied Materials, Inc. Plasma reactor gas distribution plate with radially distributed path splitting manifold
US20090188625A1 (en) * 2008-01-28 2009-07-30 Carducci James D Etching chamber having flow equalizer and lower liner
KR101004927B1 (ko) * 2008-04-24 2010-12-29 삼성엘이디 주식회사 Ｃｖｄ용 샤워 헤드 및 이를 구비하는 화학 기상 증착 장치
US8221582B2 (en) 2008-07-07 2012-07-17 Lam Research Corporation Clamped monolithic showerhead electrode
US8161906B2 (en) * 2008-07-07 2012-04-24 Lam Research Corporation Clamped showerhead electrode assembly
US8206506B2 (en) 2008-07-07 2012-06-26 Lam Research Corporation Showerhead electrode
US8367965B2 (en) * 2008-08-28 2013-02-05 Hermes-Epitek Corp. Electrode design for plasma processing chamber
US8402918B2 (en) * 2009-04-07 2013-03-26 Lam Research Corporation Showerhead electrode with centering feature
US8272346B2 (en) 2009-04-10 2012-09-25 Lam Research Corporation Gasket with positioning feature for clamped monolithic showerhead electrode
US8382939B2 (en) * 2009-07-13 2013-02-26 Applied Materials, Inc. Plasma processing chamber with enhanced gas delivery
US8419959B2 (en) * 2009-09-18 2013-04-16 Lam Research Corporation Clamped monolithic showerhead electrode
US9449859B2 (en) * 2009-10-09 2016-09-20 Applied Materials, Inc. Multi-gas centrally cooled showerhead design
JP3160877U (ja) 2009-10-13 2010-07-15 ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ シャワーヘッド電極アセンブリの端部クランプ留めおよび機械固定される内側電極
KR101587054B1 (ko) * 2009-11-23 2016-01-21 주성엔지니어링(주) 기판처리장치
US8920597B2 (en) * 2010-08-20 2014-12-30 Applied Materials, Inc. Symmetric VHF source for a plasma reactor
US8573152B2 (en) 2010-09-03 2013-11-05 Lam Research Corporation Showerhead electrode
US10658161B2 (en) 2010-10-15 2020-05-19 Applied Materials, Inc. Method and apparatus for reducing particle defects in plasma etch chambers
US9543123B2 (en) 2011-03-31 2017-01-10 Tokyo Electronics Limited Plasma processing apparatus and plasma generation antenna
TWI654762B (zh) 2011-05-05 2019-03-21 日商半導體能源研究所股份有限公司 半導體裝置及其製造方法
DE102011080620B4 (de) * 2011-08-08 2014-06-05 Siemens Aktiengesellschaft Verfahren für die Beschichtung eines Isolationsbauteils und Isolationsbauteil sowie elektrisch leitfähiges Heizkabel
TW201325326A (zh) * 2011-10-05 2013-06-16 Applied Materials Inc 電漿處理設備及其基板支撐組件
KR101854738B1 (ko) * 2012-01-09 2018-06-20 주성엔지니어링(주) 박막 증착 장치, 플라즈마 발생 장치, 및 박막 증착 방법
TWI439700B (zh) 2012-01-19 2014-06-01 Ind Tech Res Inst 用於具有雙導線之電力電纜線的電力感測裝置
US8932429B2 (en) * 2012-02-23 2015-01-13 Lam Research Corporation Electronic knob for tuning radial etch non-uniformity at VHF frequencies
US11783138B2 (en) 2012-04-04 2023-10-10 Hypertherm, Inc. Configuring signal devices in thermal processing systems
US9896769B2 (en) 2012-07-20 2018-02-20 Applied Materials, Inc. Inductively coupled plasma source with multiple dielectric windows and window-supporting structure
US9132436B2 (en) 2012-09-21 2015-09-15 Applied Materials, Inc. Chemical control features in wafer process equipment
US8970114B2 (en) 2013-02-01 2015-03-03 Lam Research Corporation Temperature controlled window of a plasma processing chamber component
US10256079B2 (en) 2013-02-08 2019-04-09 Applied Materials, Inc. Semiconductor processing systems having multiple plasma configurations
JP5723397B2 (ja) * 2013-02-18 2015-05-27 東京エレクトロン株式会社 プラズマ処理装置
KR102130061B1 (ko) 2013-03-15 2020-07-03 어플라이드 머티어리얼스, 인코포레이티드 매우 대칭적인 4-폴드 가스 주입부를 갖는 플라즈마 반응기
TW201530041A (zh) * 2013-10-11 2015-08-01 Applied Materials Inc 促進對於多腔室的系統單點連接之緊密危險性氣體線分配
US10456855B2 (en) 2013-11-13 2019-10-29 Hypertherm, Inc. Consumable cartridge for a plasma arc cutting system
US11278983B2 (en) 2013-11-13 2022-03-22 Hypertherm, Inc. Consumable cartridge for a plasma arc cutting system
US12275082B2 (en) 2013-11-13 2025-04-15 Hypertherm, Inc. Consumable cartridge for a plasma arc cutting system
US11432393B2 (en) 2013-11-13 2022-08-30 Hypertherm, Inc. Cost effective cartridge for a plasma arc torch
US9981335B2 (en) 2013-11-13 2018-05-29 Hypertherm, Inc. Consumable cartridge for a plasma arc cutting system
US11684995B2 (en) 2013-11-13 2023-06-27 Hypertherm, Inc. Cost effective cartridge for a plasma arc torch
EP3958654A1 (en) 2014-08-12 2022-02-23 Hypertherm, Inc. Cost effective cartridge for a plasma arc torch
JP6544902B2 (ja) * 2014-09-18 2019-07-17 東京エレクトロン株式会社 プラズマ処理装置
JP6501493B2 (ja) * 2014-11-05 2019-04-17 東京エレクトロン株式会社 プラズマ処理装置
US11637002B2 (en) 2014-11-26 2023-04-25 Applied Materials, Inc. Methods and systems to enhance process uniformity
JP6423706B2 (ja) * 2014-12-16 2018-11-14 東京エレクトロン株式会社 プラズマ処理装置
US20160225652A1 (en) 2015-02-03 2016-08-04 Applied Materials, Inc. Low temperature chuck for plasma processing systems
US9736920B2 (en) * 2015-02-06 2017-08-15 Mks Instruments, Inc. Apparatus and method for plasma ignition with a self-resonating device
JP6542053B2 (ja) * 2015-07-15 2019-07-10 株式会社東芝 プラズマ電極構造、およびプラズマ誘起流発生装置
WO2017024160A1 (en) 2015-08-04 2017-02-09 Hypertherm, Inc. Cartridge for a liquid-cooled plasma arc torch
US9741593B2 (en) 2015-08-06 2017-08-22 Applied Materials, Inc. Thermal management systems and methods for wafer processing systems
US10504700B2 (en) 2015-08-27 2019-12-10 Applied Materials, Inc. Plasma etching systems and methods with secondary plasma injection
CN105232144B (zh) * 2015-11-18 2017-07-21 南京亿高微波系统工程有限公司 一种用于耳鼻喉科手术的双极等离子系统及其控制方法
KR101798373B1 (ko) * 2016-05-03 2017-11-17 (주)브이앤아이솔루션 유도결합 플라즈마 처리장치의 유전체창 지지구조
US10504754B2 (en) 2016-05-19 2019-12-10 Applied Materials, Inc. Systems and methods for improved semiconductor etching and component protection
US9865484B1 (en) 2016-06-29 2018-01-09 Applied Materials, Inc. Selective etch using material modification and RF pulsing
US10546729B2 (en) 2016-10-04 2020-01-28 Applied Materials, Inc. Dual-channel showerhead with improved profile
CN108257840B (zh) * 2016-12-29 2021-03-30 中微半导体设备(上海)股份有限公司 一种等离子处理装置
US10431429B2 (en) 2017-02-03 2019-10-01 Applied Materials, Inc. Systems and methods for radial and azimuthal control of plasma uniformity
CN110352630B (zh) 2017-02-09 2022-10-04 海别得公司 用于等离子弧焊炬筒的涡流环和接触元件
JP6950196B2 (ja) * 2017-02-16 2021-10-13 三菱マテリアル株式会社 プラズマ処理装置用電極板およびプラズマ処理装置用電極板の再生方法
US10943834B2 (en) 2017-03-13 2021-03-09 Applied Materials, Inc. Replacement contact process
US11276559B2 (en) 2017-05-17 2022-03-15 Applied Materials, Inc. Semiconductor processing chamber for multiple precursor flow
US11276590B2 (en) 2017-05-17 2022-03-15 Applied Materials, Inc. Multi-zone semiconductor substrate supports
JP7176860B6 (ja) 2017-05-17 2022-12-16 アプライド マテリアルズ インコーポレイテッド 前駆体の流れを改善する半導体処理チャンバ
KR102578539B1 (ko) * 2017-07-28 2023-09-13 스미토모덴키고교가부시키가이샤 샤워 헤드 및 그 제조 방법
US10297458B2 (en) 2017-08-07 2019-05-21 Applied Materials, Inc. Process window widening using coated parts in plasma etch processes
US11290080B2 (en) 2017-11-29 2022-03-29 COMET Technologies USA, Inc. Retuning for impedance matching network control
US12288673B2 (en) 2017-11-29 2025-04-29 COMET Technologies USA, Inc. Retuning for impedance matching network control
JP7026498B2 (ja) * 2017-12-12 2022-02-28 東京エレクトロン株式会社 アンテナ及びプラズマ成膜装置
US10903054B2 (en) 2017-12-19 2021-01-26 Applied Materials, Inc. Multi-zone gas distribution systems and methods
US11328909B2 (en) 2017-12-22 2022-05-10 Applied Materials, Inc. Chamber conditioning and removal processes
CN109961999B (zh) * 2017-12-22 2021-03-23 中微半导体设备(上海)股份有限公司 一种气体喷淋头及防止聚合物积聚的方法
US10854426B2 (en) 2018-01-08 2020-12-01 Applied Materials, Inc. Metal recess for semiconductor structures
JP7022312B2 (ja) * 2018-01-25 2022-02-18 日新電機株式会社 容量素子及びプラズマ処理装置
US11532464B2 (en) * 2018-02-15 2022-12-20 Applied Materials, Inc. Reactor design for large-area VHF plasma processing with improved uniformity
US10964512B2 (en) 2018-02-15 2021-03-30 Applied Materials, Inc. Semiconductor processing chamber multistage mixing apparatus and methods
US10319600B1 (en) 2018-03-12 2019-06-11 Applied Materials, Inc. Thermal silicon etch
US10886137B2 (en) 2018-04-30 2021-01-05 Applied Materials, Inc. Selective nitride removal
DE102018112938A1 (de) * 2018-05-30 2019-12-05 VON ARDENNE Asset GmbH & Co. KG Gasversorgung, Beschichtungsvorrichtung und Verfahren
JP2021532268A (ja) 2018-07-31 2021-11-25 アプライド マテリアルズ インコーポレイテッドApplied Materials, Incorporated Ｃｖｄチャンバのためのガスボックス
US11049755B2 (en) 2018-09-14 2021-06-29 Applied Materials, Inc. Semiconductor substrate supports with embedded RF shield
US10892198B2 (en) 2018-09-14 2021-01-12 Applied Materials, Inc. Systems and methods for improved performance in semiconductor processing
US11062887B2 (en) 2018-09-17 2021-07-13 Applied Materials, Inc. High temperature RF heater pedestals
US11417534B2 (en) 2018-09-21 2022-08-16 Applied Materials, Inc. Selective material removal
WO2020067246A1 (ja) * 2018-09-27 2020-04-02 東京エレクトロン株式会社 基板処理装置および基板処理方法
US10984987B2 (en) * 2018-10-10 2021-04-20 Lam Research Corporation Showerhead faceplate having flow apertures configured for hollow cathode discharge suppression
US11682560B2 (en) 2018-10-11 2023-06-20 Applied Materials, Inc. Systems and methods for hafnium-containing film removal
US11121002B2 (en) 2018-10-24 2021-09-14 Applied Materials, Inc. Systems and methods for etching metals and metal derivatives
US11437242B2 (en) 2018-11-27 2022-09-06 Applied Materials, Inc. Selective removal of silicon-containing materials
US11721527B2 (en) 2019-01-07 2023-08-08 Applied Materials, Inc. Processing chamber mixing systems
US10920319B2 (en) * 2019-01-11 2021-02-16 Applied Materials, Inc. Ceramic showerheads with conductive electrodes
US11114279B2 (en) 2019-06-28 2021-09-07 COMET Technologies USA, Inc. Arc suppression device for plasma processing equipment
US11527385B2 (en) 2021-04-29 2022-12-13 COMET Technologies USA, Inc. Systems and methods for calibrating capacitors of matching networks
US11107661B2 (en) 2019-07-09 2021-08-31 COMET Technologies USA, Inc. Hybrid matching network topology
US11596309B2 (en) 2019-07-09 2023-03-07 COMET Technologies USA, Inc. Hybrid matching network topology
US12002611B2 (en) 2019-08-28 2024-06-04 COMET Technologies USA, Inc. High power low frequency coils
KR102695926B1 (ko) * 2019-10-07 2024-08-16 삼성전자주식회사 가스 공급 유닛 및 이를 포함하는 기판 처리 장치
US11521832B2 (en) 2020-01-10 2022-12-06 COMET Technologies USA, Inc. Uniformity control for radio frequency plasma processing systems
US11830708B2 (en) 2020-01-10 2023-11-28 COMET Technologies USA, Inc. Inductive broad-band sensors for electromagnetic waves
US11670488B2 (en) 2020-01-10 2023-06-06 COMET Technologies USA, Inc. Fast arc detecting match network
US12027351B2 (en) 2020-01-10 2024-07-02 COMET Technologies USA, Inc. Plasma non-uniformity detection
US11887820B2 (en) * 2020-01-10 2024-01-30 COMET Technologies USA, Inc. Sector shunts for plasma-based wafer processing systems
US11605527B2 (en) 2020-01-20 2023-03-14 COMET Technologies USA, Inc. Pulsing control match network
US11961711B2 (en) 2020-01-20 2024-04-16 COMET Technologies USA, Inc. Radio frequency match network and generator
WO2021158451A1 (en) * 2020-02-04 2021-08-12 Lam Research Corporation Radiofrequency signal filter arrangement for plasma processing system
US12139791B2 (en) 2020-06-15 2024-11-12 Lam Research Corporation Showerhead faceplates with angled gas distribution passages for semiconductor processing tools
KR102779163B1 (ko) * 2020-09-10 2025-03-11 주식회사 원익아이피에스 기판 처리 장치
JP2022048825A (ja) 2020-09-15 2022-03-28 東京エレクトロン株式会社 プラズマ処理装置及び半導体デバイスの製造方法
US11373844B2 (en) 2020-09-28 2022-06-28 COMET Technologies USA, Inc. Systems and methods for repetitive tuning of matching networks
US11515150B2 (en) * 2020-10-22 2022-11-29 Applied Materials, Inc. Hardmask tuning by electrode adjustment
US12057296B2 (en) 2021-02-22 2024-08-06 COMET Technologies USA, Inc. Electromagnetic field sensing device
US11923175B2 (en) 2021-07-28 2024-03-05 COMET Technologies USA, Inc. Systems and methods for variable gain tuning of matching networks
CN116417321A (zh) * 2021-12-31 2023-07-11 中微半导体设备(上海)股份有限公司 一种测温结构、上电极组件及等离子体处理装置
US12243717B2 (en) 2022-04-04 2025-03-04 COMET Technologies USA, Inc. Variable reactance device having isolated gate drive power supplies
US11657980B1 (en) 2022-05-09 2023-05-23 COMET Technologies USA, Inc. Dielectric fluid variable capacitor
US12040139B2 (en) 2022-05-09 2024-07-16 COMET Technologies USA, Inc. Variable capacitor with linear impedance and high voltage breakdown
US12051549B2 (en) 2022-08-02 2024-07-30 COMET Technologies USA, Inc. Coaxial variable capacitor
US12132435B2 (en) 2022-10-27 2024-10-29 COMET Technologies USA, Inc. Method for repeatable stepper motor homing
TW202509995A (zh) * 2023-04-04 2025-03-01 日商東京威力科創股份有限公司 電漿處理裝置及電漿處理裝置內構件
KR20240154308A (ko) * 2023-04-18 2024-10-25 피에스케이 주식회사 기판 처리 장치

Family Cites Families (133)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2967926A (en) 1958-03-10 1961-01-10 Union Carbide Corp Testing process and apparatus
US2951960A (en) 1959-03-24 1960-09-06 Tung Sol Electric Inc Gaseous discharge device
FR1402020A (fr) * 1964-04-27 1965-06-11 Csf Perfectionnements aux sources d'ions
US3610986A (en) 1970-05-01 1971-10-05 Union Carbide Corp Electron beam source including a pilot nonthermionic, electron source
US4458180A (en) 1982-02-18 1984-07-03 Elscint Ltd. Plasma electron source for cold-cathode discharge device or the like
US4570106A (en) 1982-02-18 1986-02-11 Elscint, Inc. Plasma electron source for cold-cathode discharge device or the like
US4464223A (en) 1983-10-03 1984-08-07 Tegal Corp. Plasma reactor apparatus and method
US4579618A (en) 1984-01-06 1986-04-01 Tegal Corporation Plasma reactor apparatus
US4859908A (en) 1986-09-24 1989-08-22 Matsushita Electric Industrial Co., Ltd. Plasma processing apparatus for large area ion irradiation
US5006760A (en) 1987-01-09 1991-04-09 Motorola, Inc. Capacitive feed for plasma reactor
DE3708716C2 (de) 1987-03-18 1993-11-04 Hans Prof Dr Rer Nat Oechsner Hochfrequenz-ionenquelle
US4973883A (en) 1987-05-01 1990-11-27 Semiconductor Energy Laborator Co., Ltd. Plasma processing apparatus with a lisitano coil
US4888518A (en) 1987-11-16 1989-12-19 Itt Corporation Gas circulation apparatus for ceramic electron tubes
US4792378A (en) 1987-12-15 1988-12-20 Texas Instruments Incorporated Gas dispersion disk for use in plasma enhanced chemical vapor deposition reactor
US5053678A (en) 1988-03-16 1991-10-01 Hitachi, Ltd. Microwave ion source
US5115167A (en) 1988-04-05 1992-05-19 Mitsubishi Denki Kabushiki Kaisha Plasma processor
EP0343500B1 (en) 1988-05-23 1994-01-19 Nippon Telegraph And Telephone Corporation Plasma etching apparatus
US5055853A (en) 1988-10-03 1991-10-08 Garnier Robert C Magnetic frill generator
US5107170A (en) 1988-10-18 1992-04-21 Nissin Electric Co., Ltd. Ion source having auxillary ion chamber
US5089083A (en) 1989-04-25 1992-02-18 Tokyo Electron Limited Plasma etching method
US5225024A (en) 1989-05-08 1993-07-06 Applied Materials, Inc. Magnetically enhanced plasma reactor system for semiconductor processing
JPH02298024A (ja) 1989-05-12 1990-12-10 Tadahiro Omi リアクティブイオンエッチング装置
US4990229A (en) 1989-06-13 1991-02-05 Plasma & Materials Technologies, Inc. High density plasma deposition and etching apparatus
US5122251A (en) 1989-06-13 1992-06-16 Plasma & Materials Technologies, Inc. High density plasma deposition and etching apparatus
DE3923661A1 (de) 1989-07-18 1991-01-24 Leybold Ag Schaltungsanordnung fuer die anpassung der impedanz einer plasmastrecke an einen hochfrequenzgenerator
US5032202A (en) 1989-10-03 1991-07-16 Martin Marietta Energy Systems, Inc. Plasma generating apparatus for large area plasma processing
US5210466A (en) 1989-10-03 1993-05-11 Applied Materials, Inc. VHF/UHF reactor system
US5223457A (en) 1989-10-03 1993-06-29 Applied Materials, Inc. High-frequency semiconductor wafer processing method using a negative self-bias
US5300460A (en) 1989-10-03 1994-04-05 Applied Materials, Inc. UHF/VHF plasma for use in forming integrated circuit structures on semiconductor wafers
JPH04901A (ja) 1990-04-18 1992-01-06 Mitsubishi Electric Corp プラズマ装置の高周波給電方法及び装置
EP0463408A3 (en) 1990-06-22 1992-07-08 Hauzer Techno Coating Europe Bv Plasma accelerator with closed electron drift
US5707486A (en) 1990-07-31 1998-01-13 Applied Materials, Inc. Plasma reactor using UHF/VHF and RF triode source, and process
US5274306A (en) 1990-08-31 1993-12-28 Kaufman & Robinson, Inc. Capacitively coupled radiofrequency plasma source
US5376211A (en) 1990-09-29 1994-12-27 Tokyo Electron Limited Magnetron plasma processing apparatus and processing method
FR2667980A1 (fr) 1990-10-12 1992-04-17 Sodern Source d'electrons presentant un dispositif de retention de matieres.
US5246532A (en) 1990-10-26 1993-09-21 Mitsubishi Denki Kabushiki Kaisha Plasma processing apparatus
JP2501948B2 (ja) 1990-10-26 1996-05-29 三菱電機株式会社 プラズマ処理方法及びプラズマ処理装置
US5195045A (en) 1991-02-27 1993-03-16 Astec America, Inc. Automatic impedance matching apparatus and method
CA2102201A1 (en) 1991-05-21 1992-11-22 Ebrahim Ghanbari Cluster tool soft etch module and ecr plasma generator therefor
US5432315A (en) * 1991-05-31 1995-07-11 Hitachi, Ltd. Plasma process apparatus including ground electrode with protection film
US6036877A (en) 1991-06-27 2000-03-14 Applied Materials, Inc. Plasma reactor with heated source of a polymer-hardening precursor material
US5198725A (en) 1991-07-12 1993-03-30 Lam Research Corporation Method of producing flat ecr layer in microwave plasma device and apparatus therefor
KR0184675B1 (ko) * 1991-07-24 1999-04-15 이노우에 쥰이치 챔버내의 전극에 있어서의 실제의 rf파워를 검출 및 제어 가능한 플라즈마 처리장치
US5849136A (en) 1991-10-11 1998-12-15 Applied Materials, Inc. High frequency semiconductor wafer processing apparatus and method
US5279669A (en) 1991-12-13 1994-01-18 International Business Machines Corporation Plasma reactor for processing substrates comprising means for inducing electron cyclotron resonance (ECR) and ion cyclotron resonance (ICR) conditions
US5175472A (en) 1991-12-30 1992-12-29 Comdel, Inc. Power monitor of RF plasma
US5273610A (en) 1992-06-23 1993-12-28 Association Institutions For Material Sciences, Inc. Apparatus and method for determining power in plasma processing
US5325019A (en) 1992-08-21 1994-06-28 Sematech, Inc. Control of plasma process by use of harmonic frequency components of voltage and current
JP2972477B2 (ja) 1993-01-27 1999-11-08 日本電気株式会社 Ｒｆ・ｅｃｒプラズマエッチング装置
TW249313B (enExample) 1993-03-06 1995-06-11 Tokyo Electron Co
US5537004A (en) 1993-03-06 1996-07-16 Tokyo Electron Limited Low frequency electron cyclotron resonance plasma processor
JP3236111B2 (ja) 1993-03-31 2001-12-10 キヤノン株式会社 プラズマ処理装置及び処理方法
US5662770A (en) 1993-04-16 1997-09-02 Micron Technology, Inc. Method and apparatus for improving etch uniformity in remote source plasma reactors with powered wafer chucks
EP0634778A1 (en) 1993-07-12 1995-01-18 The Boc Group, Inc. Hollow cathode array
EP0719447B1 (en) 1993-09-17 1998-07-22 Isis Innovation Limited Rf plasma reactor
US5849372A (en) 1993-09-17 1998-12-15 Isis Innovation Limited RF plasma reactor and methods of generating RF plasma
JPH07121862A (ja) 1993-10-27 1995-05-12 Sony Corp 塗布型磁気記録媒体
US5467013A (en) 1993-12-07 1995-11-14 Sematech, Inc. Radio frequency monitor for semiconductor process control
US5463525A (en) 1993-12-20 1995-10-31 International Business Machines Corporation Guard ring electrostatic chuck
JP3279038B2 (ja) 1994-01-31 2002-04-30 ソニー株式会社 プラズマ装置およびこれを用いたプラズマ処理方法
JP3365067B2 (ja) 1994-02-10 2003-01-08 ソニー株式会社 プラズマ装置およびこれを用いたプラズマ処理方法
US5512130A (en) 1994-03-09 1996-04-30 Texas Instruments Incorporated Method and apparatus of etching a clean trench in a semiconductor material
US5900103A (en) 1994-04-20 1999-05-04 Tokyo Electron Limited Plasma treatment method and apparatus
US5685914A (en) 1994-04-05 1997-11-11 Applied Materials, Inc. Focus ring for semiconductor wafer processing in a plasma reactor
US5556549A (en) 1994-05-02 1996-09-17 Lsi Logic Corporation Power control and delivery in plasma processing equipment
EP1335419A3 (en) 1994-06-15 2003-08-27 Seiko Epson Corporation Fabrication method for a thin film semiconductor device, the thin film semiconductor device itself, liquid crystal display, and electronic device
US5587038A (en) 1994-06-16 1996-12-24 Princeton University Apparatus and process for producing high density axially extending plasmas
AU2003195A (en) 1994-06-21 1996-01-04 Boc Group, Inc., The Improved power distribution for multiple electrode plasma systems using quarter wavelength transmission lines
US5474648A (en) 1994-07-29 1995-12-12 Lsi Logic Corporation Uniform and repeatable plasma processing
IT1269413B (it) 1994-10-21 1997-04-01 Proel Tecnologie Spa Sorgente di plasma a radiofrequenza
US5576629A (en) 1994-10-24 1996-11-19 Fourth State Technology, Inc. Plasma monitoring and control method and system
JP2956494B2 (ja) 1994-10-26 1999-10-04 住友金属工業株式会社 プラズマ処理装置
US5605637A (en) 1994-12-15 1997-02-25 Applied Materials Inc. Adjustable dc bias control in a plasma reactor
US5576600A (en) 1994-12-23 1996-11-19 Dynatenn, Inc. Broad high current ion source
US5792376A (en) 1995-01-06 1998-08-11 Kabushiki Kaisha Toshiba Plasma processing apparatus and plasma processing method
JP3778299B2 (ja) 1995-02-07 2006-05-24 東京エレクトロン株式会社 プラズマエッチング方法
US5674321A (en) 1995-04-28 1997-10-07 Applied Materials, Inc. Method and apparatus for producing plasma uniformity in a magnetic field-enhanced plasma reactor
US5710486A (en) 1995-05-08 1998-01-20 Applied Materials, Inc. Inductively and multi-capacitively coupled plasma reactor
JP3169337B2 (ja) 1995-05-30 2001-05-21 キヤノン株式会社 光起電力素子及びその製造方法
JP3208044B2 (ja) 1995-06-07 2001-09-10 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
US5997962A (en) 1995-06-30 1999-12-07 Tokyo Electron Limited Plasma process utilizing an electrostatic chuck
US5907221A (en) 1995-08-16 1999-05-25 Applied Materials, Inc. Inductively coupled plasma reactor with an inductive coil antenna having independent loops
US6089182A (en) 1995-08-17 2000-07-18 Tokyo Electron Limited Plasma processing apparatus
KR100226366B1 (ko) 1995-08-23 1999-10-15 아끼구사 나오유끼 플라즈마장치 및 플라즈마 처리방법
JPH09106898A (ja) 1995-10-09 1997-04-22 Anelva Corp プラズマｃｖｄ装置、プラズマ処理装置及びプラズマｃｖｄ方法
US5965034A (en) 1995-12-04 1999-10-12 Mc Electronics Co., Ltd. High frequency plasma process wherein the plasma is executed by an inductive structure in which the phase and anti-phase portion of the capacitive currents between the inductive structure and the plasma are balanced
US6095084A (en) * 1996-02-02 2000-08-01 Applied Materials, Inc. High density plasma process chamber
US5942074A (en) 1996-03-29 1999-08-24 Lam Research Corporation Single-piece gas director for plasma reactors
JP3238082B2 (ja) 1996-05-16 2001-12-10 シャープ株式会社 電子デバイス製造装置
US5863376A (en) 1996-06-05 1999-01-26 Lam Research Corporation Temperature controlling method and apparatus for a plasma processing chamber
US5885358A (en) 1996-07-09 1999-03-23 Applied Materials, Inc. Gas injection slit nozzle for a plasma process reactor
US5770922A (en) 1996-07-22 1998-06-23 Eni Technologies, Inc. Baseband V-I probe
US5866986A (en) 1996-08-05 1999-02-02 Integrated Electronic Innovations, Inc. Microwave gas phase plasma source
JPH10134996A (ja) 1996-10-31 1998-05-22 Nec Corp プラズマ処理装置
US6113731A (en) 1997-01-02 2000-09-05 Applied Materials, Inc. Magnetically-enhanced plasma chamber with non-uniform magnetic field
US6152071A (en) 1996-12-11 2000-11-28 Canon Kabushiki Kaisha High-frequency introducing means, plasma treatment apparatus, and plasma treatment method
JP3650248B2 (ja) 1997-03-19 2005-05-18 東京エレクトロン株式会社 プラズマ処理装置
JP3582287B2 (ja) 1997-03-26 2004-10-27 株式会社日立製作所 エッチング装置
TW376547B (en) 1997-03-27 1999-12-11 Matsushita Electric Industrial Co Ltd Method and apparatus for plasma processing
US6174450B1 (en) 1997-04-16 2001-01-16 Lam Research Corporation Methods and apparatus for controlling ion energy and plasma density in a plasma processing system
US6155200A (en) 1997-07-08 2000-12-05 Tokyo Electron Limited ECR plasma generator and an ECR system using the generator
US6110395A (en) 1997-08-26 2000-08-29 Trikon Technologies, Inc. Method and structure for controlling plasma uniformity
JP2929284B2 (ja) 1997-09-10 1999-08-03 株式会社アドテック 高周波プラズマ処理装置のためのインピーダンス整合及び電力制御システム
US6291999B1 (en) 1997-09-30 2001-09-18 Daihen Corp. Plasma monitoring apparatus
US5971591A (en) 1997-10-20 1999-10-26 Eni Technologies, Inc. Process detection system for plasma process
US6041734A (en) 1997-12-01 2000-03-28 Applied Materials, Inc. Use of an asymmetric waveform to control ion bombardment during substrate processing
US6079356A (en) 1997-12-02 2000-06-27 Applied Materials, Inc. Reactor optimized for chemical vapor deposition of titanium
US6251216B1 (en) 1997-12-17 2001-06-26 Matsushita Electronics Corporation Apparatus and method for plasma processing
US5929717A (en) 1998-01-09 1999-07-27 Lam Research Corporation Method of and apparatus for minimizing plasma instability in an RF processor
US6449568B1 (en) 1998-02-27 2002-09-10 Eni Technology, Inc. Voltage-current sensor with high matching directivity
JP4147608B2 (ja) 1998-03-06 2008-09-10 東京エレクトロン株式会社 熱処理装置
US6106663A (en) 1998-06-19 2000-08-22 Lam Research Corporation Semiconductor process chamber electrode
JP3818561B2 (ja) 1998-10-29 2006-09-06 エルジー フィリップス エルシーディー カンパニー リミテッド シリコン酸化膜の成膜方法および薄膜トランジスタの製造方法
US6213050B1 (en) 1998-12-01 2001-04-10 Silicon Genesis Corporation Enhanced plasma mode and computer system for plasma immersion ion implantation
JP3595853B2 (ja) * 1999-03-18 2004-12-02 日本エー・エス・エム株式会社 プラズマｃｖｄ成膜装置
US6188564B1 (en) 1999-03-31 2001-02-13 Lam Research Corporation Method and apparatus for compensating non-uniform wafer processing in plasma processing chamber
JP2000290777A (ja) * 1999-04-07 2000-10-17 Tokyo Electron Ltd ガス処理装置、バッフル部材、及びガス処理方法
US6206972B1 (en) 1999-07-08 2001-03-27 Genus, Inc. Method and apparatus for providing uniform gas delivery to substrates in CVD and PECVD processes
JP3374796B2 (ja) 1999-08-06 2003-02-10 松下電器産業株式会社 プラズマ処理方法及び装置
US6262538B1 (en) 1999-08-26 2001-07-17 International Business Machines Corporation High density plasma tool with adjustable uniformity and stochastic electron heating for reduced gas cracking
JP3366301B2 (ja) 1999-11-10 2003-01-14 日本電気株式会社 プラズマｃｖｄ装置
JP4098711B2 (ja) * 2000-02-21 2008-06-11 株式会社日立製作所 プラズマ処理装置
US6451703B1 (en) 2000-03-10 2002-09-17 Applied Materials, Inc. Magnetically enhanced plasma etch process using a heavy fluorocarbon etching gas
US6528751B1 (en) 2000-03-17 2003-03-04 Applied Materials, Inc. Plasma reactor with overhead RF electrode tuned to the plasma
US7220937B2 (en) * 2000-03-17 2007-05-22 Applied Materials, Inc. Plasma reactor with overhead RF source power electrode with low loss, low arcing tendency and low contamination
US7030335B2 (en) * 2000-03-17 2006-04-18 Applied Materials, Inc. Plasma reactor with overhead RF electrode tuned to the plasma with arcing suppression
US6894245B2 (en) * 2000-03-17 2005-05-17 Applied Materials, Inc. Merie plasma reactor with overhead RF electrode tuned to the plasma with arcing suppression
US6462481B1 (en) 2000-07-06 2002-10-08 Applied Materials Inc. Plasma reactor having a symmetric parallel conductor coil antenna
JP3565774B2 (ja) * 2000-09-12 2004-09-15 株式会社日立製作所 プラズマ処理装置及び処理方法
JP4669137B2 (ja) * 2001-02-16 2011-04-13 東京エレクトロン株式会社 分割可能な電極及びこの電極を用いたプラズマ処理装置
US20020139477A1 (en) * 2001-03-30 2002-10-03 Lam Research Corporation Plasma processing method and apparatus with control of plasma excitation power
US6652712B2 (en) 2001-12-19 2003-11-25 Applied Materials, Inc Inductive antenna for a plasma reactor producing reduced fluorine dissociation
US6586886B1 (en) 2001-12-19 2003-07-01 Applied Materials, Inc. Gas distribution plate electrode for a plasma reactor

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