JP4772679B2 - 研磨装置及び基板処理装置 - Google Patents

研磨装置及び基板処理装置 Download PDF

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Publication number
JP4772679B2
JP4772679B2 JP2006524978A JP2006524978A JP4772679B2 JP 4772679 B2 JP4772679 B2 JP 4772679B2 JP 2006524978 A JP2006524978 A JP 2006524978A JP 2006524978 A JP2006524978 A JP 2006524978A JP 4772679 B2 JP4772679 B2 JP 4772679B2
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Prior art keywords
polishing
substrate
semiconductor wafer
chamber
unit
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English (en)
Japanese (ja)
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JP2007524231A (ja
Inventor
明久 本郷
賢也 伊藤
健二 山口
正行 中西
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Ebara Corp
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Ebara Corp
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Publication of JP2007524231A publication Critical patent/JP2007524231A/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/02—Lapping machines or devices; Accessories designed for working surfaces of revolution
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B21/00—Machines or devices using grinding or polishing belts; Accessories therefor
    • B24B21/002—Machines or devices using grinding or polishing belts; Accessories therefor for grinding edges or bevels
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B9/00—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor
    • B24B9/02—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground
    • B24B9/06—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain
    • B24B9/065—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain of thin, brittle parts, e.g. semiconductors, wafers

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Grinding And Polishing Of Tertiary Curved Surfaces And Surfaces With Complex Shapes (AREA)
JP2006524978A 2004-02-25 2005-02-23 研磨装置及び基板処理装置 Active JP4772679B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2006524978A JP4772679B2 (ja) 2004-02-25 2005-02-23 研磨装置及び基板処理装置

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2004049236 2004-02-25
JP2004049236 2004-02-25
PCT/JP2005/003415 WO2005081301A1 (en) 2004-02-25 2005-02-23 Polishing apparatus and substrate processing apparatus
JP2006524978A JP4772679B2 (ja) 2004-02-25 2005-02-23 研磨装置及び基板処理装置

Publications (2)

Publication Number Publication Date
JP2007524231A JP2007524231A (ja) 2007-08-23
JP4772679B2 true JP4772679B2 (ja) 2011-09-14

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006524978A Active JP4772679B2 (ja) 2004-02-25 2005-02-23 研磨装置及び基板処理装置

Country Status (7)

Country Link
US (2) US7682225B2 (de)
EP (1) EP1719161B1 (de)
JP (1) JP4772679B2 (de)
KR (1) KR101118655B1 (de)
CN (1) CN100429752C (de)
TW (1) TWI357099B (de)
WO (1) WO2005081301A1 (de)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20150042708A (ko) 2013-10-11 2015-04-21 가부시키가이샤 에바라 세이사꾸쇼 기판 처리 장치 및 기판 처리 방법
EP3082155A1 (de) 2015-04-14 2016-10-19 Ebara Corporation Substratverarbeitungsvorrichtung und substratverarbeitungsverfahren

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KR101236855B1 (ko) * 2005-12-09 2013-02-26 어플라이드 머티어리얼스, 인코포레이티드 기판 처리 방법 및 장치
JP2008036783A (ja) 2006-08-08 2008-02-21 Sony Corp 研磨方法および研磨装置
JP4999417B2 (ja) * 2006-10-04 2012-08-15 株式会社荏原製作所 研磨装置、研磨方法、処理装置
JP2008166709A (ja) * 2006-12-05 2008-07-17 Ebara Corp 基板研磨装置、及び基板研磨設備
ATE491547T1 (de) * 2007-04-04 2011-01-15 Fisba Optik Ag Verfahren und vorrichtung zum herstellen von optischen elementen
JP2008284683A (ja) * 2007-05-21 2008-11-27 Applied Materials Inc 基板の振動により基板のノッチを研磨する方法及び装置
TW200908124A (en) * 2007-05-21 2009-02-16 Applied Materials Inc Methods and apparatus for using a bevel polishing head with an efficient tape routing arrangement
JP2008288599A (ja) * 2007-05-21 2008-11-27 Applied Materials Inc 研磨パッドを使用して基板のノッチを研磨する方法及び装置
TW200908123A (en) * 2007-05-21 2009-02-16 Applied Materials Inc Methods and apparatus to control substrate bevel and edge polishing profiles of films
JP2008284684A (ja) * 2007-05-21 2008-11-27 Applied Materials Inc 研磨アームを使用して基板の縁部を研磨する方法及び装置
JP2008306179A (ja) * 2007-05-21 2008-12-18 Applied Materials Inc バッキングパッドを使用して基板の両面の縁部から膜及び薄片を除去する方法及び装置
TW200908122A (en) * 2007-05-21 2009-02-16 Applied Materials Inc Methods and apparatus for using a rolling backing pad for substrate polishing
US7976361B2 (en) * 2007-06-29 2011-07-12 Ebara Corporation Polishing apparatus and polishing method
JP5254575B2 (ja) * 2007-07-11 2013-08-07 株式会社東芝 研磨装置および研磨方法
JP5004701B2 (ja) * 2007-07-11 2012-08-22 株式会社荏原製作所 研磨装置
JP2009045679A (ja) * 2007-08-16 2009-03-05 Ebara Corp 研磨装置
KR101236472B1 (ko) * 2007-10-15 2013-02-22 삼성전자주식회사 웨이퍼 베벨 영역 폴리싱 장치 및 그 장치에서의 연마종말점 검출 방법
JP5274993B2 (ja) * 2007-12-03 2013-08-28 株式会社荏原製作所 研磨装置
JP5393039B2 (ja) 2008-03-06 2014-01-22 株式会社荏原製作所 研磨装置
US20090264053A1 (en) * 2008-04-21 2009-10-22 Applied Materials, Inc. Apparatus and methods for using a polishing tape cassette
JP5160993B2 (ja) 2008-07-25 2013-03-13 株式会社荏原製作所 基板処理装置
US20100105299A1 (en) * 2008-10-24 2010-04-29 Applied Materials, Inc. Methods and apparatus for polishing an edge and/or notch of a substrate
US20100105290A1 (en) * 2008-10-24 2010-04-29 Applied Materials, Inc. Methods and apparatus for indicating a polishing tape end
US20100105291A1 (en) * 2008-10-24 2010-04-29 Applied Materials, Inc. Methods and apparatus for polishing a notch of a substrate
JP5519256B2 (ja) * 2009-12-03 2014-06-11 株式会社荏原製作所 裏面が研削された基板を研磨する方法および装置
JP5663295B2 (ja) * 2010-01-15 2015-02-04 株式会社荏原製作所 研磨装置、研磨方法、研磨具を押圧する押圧部材
JP2011177842A (ja) * 2010-03-02 2011-09-15 Ebara Corp 研磨装置及び研磨方法
CN101791773B (zh) * 2010-03-29 2012-10-24 中国电子科技集团公司第四十五研究所 倒角机硅片定位工作台
JP5464497B2 (ja) * 2010-08-19 2014-04-09 株式会社サンシン 基板研磨方法及びその装置
JP5649417B2 (ja) * 2010-11-26 2015-01-07 株式会社荏原製作所 固定砥粒を有する研磨テープを用いた基板の研磨方法
JP5886602B2 (ja) * 2011-03-25 2016-03-16 株式会社荏原製作所 研磨装置および研磨方法
CN102181844B (zh) * 2011-04-07 2015-04-22 中微半导体设备(上海)有限公司 清洁装置及清洁方法、薄膜生长反应装置及生长方法
EP2537633B1 (de) * 2011-06-24 2014-05-07 Comadur S.A. Bearbeitungssystem einer Abschrägung
JP5831974B2 (ja) * 2011-11-08 2015-12-16 Ｍｉｐｏｘ株式会社 端縁部を研磨テープにより研磨仕上げした板ガラス並びに板ガラス端縁部の研磨方法及び研磨装置
TWI577791B (zh) * 2012-04-27 2017-04-11 福吉米股份有限公司 合金材料用洗淨劑及合金材料之製造方法
TWI663018B (zh) * 2012-09-24 2019-06-21 日商荏原製作所股份有限公司 研磨方法及研磨裝置
US9931726B2 (en) * 2013-01-31 2018-04-03 Taiwan Semiconductor Manufacturing Company, Ltd. Wafer edge trimming tool using abrasive tape
KR20150034866A (ko) * 2013-09-25 2015-04-06 삼성전자주식회사 연마 장치
US9857680B2 (en) 2014-01-14 2018-01-02 Taiwan Semiconductor Manufacturing Company, Ltd. Cleaning module, cleaning apparatus and method of cleaning photomask
US9855637B2 (en) * 2014-04-10 2018-01-02 Apple Inc. Thermographic characterization for surface finishing process development
CN104526556B (zh) * 2014-11-24 2017-09-22 清华大学 单磨粒磨削实验装置
US10249518B2 (en) * 2015-03-04 2019-04-02 Toshiba Memory Corporation Polishing device and polishing method
DE102015221939B4 (de) * 2015-11-09 2018-10-31 Supfina Grieshaber Gmbh & Co. Kg Finishbandvorrichtung und Verfahren zur finishenden Bearbeitung eines Werkstücks
JP2017148931A (ja) 2016-02-19 2017-08-31 株式会社荏原製作所 研磨装置および研磨方法
US9865477B2 (en) * 2016-02-24 2018-01-09 Taiwan Semiconductor Manufacturing Co., Ltd. Backside polisher with dry frontside design and method using the same
CN105773341A (zh) * 2016-05-17 2016-07-20 昆山六丰机械工业有限公司 一种轮毂去毛刺装置
JP6327329B1 (ja) 2016-12-20 2018-05-23 株式会社Sumco シリコンウェーハの研磨方法およびシリコンウェーハの製造方法
CN106553107A (zh) * 2017-01-05 2017-04-05 南通沃特光电科技有限公司 一种抛光铣床及其抛光方法
JP6920849B2 (ja) * 2017-03-27 2021-08-18 株式会社荏原製作所 基板処理方法および装置
CN106992115B (zh) * 2017-04-14 2019-10-25 上海华虹宏力半导体制造有限公司 提高集成电路可靠性的方法
JP6974067B2 (ja) * 2017-08-17 2021-12-01 株式会社荏原製作所 基板を研磨する方法および装置
JP7020986B2 (ja) * 2018-04-16 2022-02-16 株式会社荏原製作所 基板処理装置および基板保持装置
US20200058521A1 (en) * 2018-08-17 2020-02-20 Taiwan Semiconductor Manufacturing Co., Ltd. Wafer cleaning with dynamic contacts
CN111673586A (zh) * 2020-06-17 2020-09-18 龙岩市武平县谨行科技有限公司 一种新型不锈钢制品生产用表面毛刺清理装置
JP7451324B2 (ja) * 2020-06-26 2024-03-18 株式会社荏原製作所 基板処理装置および基板処理方法
CN113580021A (zh) * 2021-07-31 2021-11-02 东莞市优耐特纳米科技有限公司 一种用于模具加工的表面处理装置
GB202213941D0 (en) * 2022-09-23 2022-11-09 Resman As System and method of quantifying carbon dioxide storage
CN117583982A (zh) * 2024-01-18 2024-02-23 山东粤海金半导体科技有限公司 一种专用的碳化硅衬底晶片倒角装置

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JPH06252110A (ja) * 1993-02-26 1994-09-09 N T T Electron Technol Kk 半導体デバイス製造装置
JPH07124853A (ja) * 1993-10-29 1995-05-16 Shin Etsu Handotai Co Ltd ウェーハのノッチ部研磨装置
JPH07164301A (ja) * 1993-12-13 1995-06-27 Nippon Micro Kooteingu Kk 研磨装置
JPH07223142A (ja) * 1993-12-14 1995-08-22 Ebara Corp ポリッシング装置
JPH08153697A (ja) * 1994-11-29 1996-06-11 Toshiba Mach Co Ltd ポリッシング装置
JPH08150559A (ja) * 1994-11-29 1996-06-11 Ebara Corp 半導体ウエハ研磨装置
JPH08243916A (ja) * 1994-12-06 1996-09-24 Ebara Corp ポリッシング装置
JPH1074717A (ja) * 1996-05-10 1998-03-17 Canon Inc 精密研磨装置および精密研磨方法
JP2000158332A (ja) * 1998-11-25 2000-06-13 Sumitomo Metal Ind Ltd 試料研磨装置
JP2000218497A (ja) * 1999-01-28 2000-08-08 Tokyo Seimitsu Co Ltd ワイヤソー
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JPH05329759A (ja) * 1992-05-29 1993-12-14 Sanshin:Kk ウエハー材縁端面研磨装置
JPH06252110A (ja) * 1993-02-26 1994-09-09 N T T Electron Technol Kk 半導体デバイス製造装置
JPH07124853A (ja) * 1993-10-29 1995-05-16 Shin Etsu Handotai Co Ltd ウェーハのノッチ部研磨装置
JPH07164301A (ja) * 1993-12-13 1995-06-27 Nippon Micro Kooteingu Kk 研磨装置
JPH07223142A (ja) * 1993-12-14 1995-08-22 Ebara Corp ポリッシング装置
JPH08153697A (ja) * 1994-11-29 1996-06-11 Toshiba Mach Co Ltd ポリッシング装置
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JPH08243916A (ja) * 1994-12-06 1996-09-24 Ebara Corp ポリッシング装置
JPH1074717A (ja) * 1996-05-10 1998-03-17 Canon Inc 精密研磨装置および精密研磨方法
JP2000158332A (ja) * 1998-11-25 2000-06-13 Sumitomo Metal Ind Ltd 試料研磨装置
JP2000218497A (ja) * 1999-01-28 2000-08-08 Tokyo Seimitsu Co Ltd ワイヤソー
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JP2003234314A (ja) * 2002-02-12 2003-08-22 Ebara Corp 基板処理装置
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Publication number Priority date Publication date Assignee Title
KR20150042708A (ko) 2013-10-11 2015-04-21 가부시키가이샤 에바라 세이사꾸쇼 기판 처리 장치 및 기판 처리 방법
EP3082155A1 (de) 2015-04-14 2016-10-19 Ebara Corporation Substratverarbeitungsvorrichtung und substratverarbeitungsverfahren
KR20160122647A (ko) 2015-04-14 2016-10-24 가부시키가이샤 에바라 세이사꾸쇼 기판 처리 장치 및 기판 처리 방법
US10458020B2 (en) 2015-04-14 2019-10-29 Ebara Corporation Substrate processing apparatus and substrate processing method
US11180853B2 (en) 2015-04-14 2021-11-23 Ebara Corporation Substrate processing apparatus and substrate processing method

Also Published As

Publication number Publication date
TWI357099B (en) 2012-01-21
EP1719161A4 (de) 2007-08-15
TW200531166A (en) 2005-09-16
KR20060123579A (ko) 2006-12-01
US20090117828A1 (en) 2009-05-07
JP2007524231A (ja) 2007-08-23
EP1719161A1 (de) 2006-11-08
KR101118655B1 (ko) 2012-03-06
WO2005081301A1 (en) 2005-09-01
US7862402B2 (en) 2011-01-04
US7682225B2 (en) 2010-03-23
EP1719161B1 (de) 2014-05-07
US20100136886A1 (en) 2010-06-03
CN100429752C (zh) 2008-10-29
CN1914711A (zh) 2007-02-14

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