JP4759598B2 - 薄膜トランジスタ、その製造方法及びそれを用いた表示装置 - Google Patents

薄膜トランジスタ、その製造方法及びそれを用いた表示装置 Download PDF

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Publication number
JP4759598B2
JP4759598B2 JP2008196038A JP2008196038A JP4759598B2 JP 4759598 B2 JP4759598 B2 JP 4759598B2 JP 2008196038 A JP2008196038 A JP 2008196038A JP 2008196038 A JP2008196038 A JP 2008196038A JP 4759598 B2 JP4759598 B2 JP 4759598B2
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JP
Japan
Prior art keywords
layer
semiconductor layer
thin film
film transistor
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2008196038A
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English (en)
Japanese (ja)
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JP2009099944A (ja
JP2009099944A5 (https=
Inventor
幹夫 島田
享 林
日出也 雲見
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to JP2008196038A priority Critical patent/JP4759598B2/ja
Application filed by Canon Inc filed Critical Canon Inc
Priority to US12/672,103 priority patent/US8563977B2/en
Priority to PCT/JP2008/067363 priority patent/WO2009041544A1/en
Priority to CN2008801082923A priority patent/CN101809747B/zh
Priority to EP08833155A priority patent/EP2195848B1/en
Priority to KR1020107008596A priority patent/KR101148718B1/ko
Priority to TW097136880A priority patent/TWI377683B/zh
Publication of JP2009099944A publication Critical patent/JP2009099944A/ja
Publication of JP2009099944A5 publication Critical patent/JP2009099944A5/ja
Application granted granted Critical
Publication of JP4759598B2 publication Critical patent/JP4759598B2/ja
Priority to US13/369,406 priority patent/US20120132911A1/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H10D30/6756—Amorphous oxide semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/014—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/817—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering

Landscapes

  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
JP2008196038A 2007-09-28 2008-07-30 薄膜トランジスタ、その製造方法及びそれを用いた表示装置 Expired - Fee Related JP4759598B2 (ja)

Priority Applications (8)

Application Number Priority Date Filing Date Title
JP2008196038A JP4759598B2 (ja) 2007-09-28 2008-07-30 薄膜トランジスタ、その製造方法及びそれを用いた表示装置
PCT/JP2008/067363 WO2009041544A1 (en) 2007-09-28 2008-09-18 Thin film transistor, manufacturing method therefor, and display apparatus using the same
CN2008801082923A CN101809747B (zh) 2007-09-28 2008-09-18 薄膜晶体管、其制造方法和使用薄膜晶体管的显示装置
EP08833155A EP2195848B1 (en) 2007-09-28 2008-09-18 Thin film transistor, manufacturing method therefor, and display apparatus using the same
US12/672,103 US8563977B2 (en) 2007-09-28 2008-09-18 Thin film transistor having a two-layer semiconductor with columnar structures, manufacturing method therefor, and display apparatus using the same
KR1020107008596A KR101148718B1 (ko) 2007-09-28 2008-09-18 박막 트랜지스터, 그 제조 방법 및 그것을 사용한 표시 장치
TW097136880A TWI377683B (en) 2007-09-28 2008-09-25 Thin film transistor, manufacturing method therefor, and display apparatus using the same
US13/369,406 US20120132911A1 (en) 2007-09-28 2012-02-09 Thin film transistor having a two-layer semiconductor, manufacturing method therefor, and display apparatus using the same

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2007254364 2007-09-28
JP2007254364 2007-09-28
JP2008196038A JP4759598B2 (ja) 2007-09-28 2008-07-30 薄膜トランジスタ、その製造方法及びそれを用いた表示装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2011031543A Division JP5395825B2 (ja) 2007-09-28 2011-02-17 薄膜トランジスタ、その製造方法及びそれを用いた表示装置

Publications (3)

Publication Number Publication Date
JP2009099944A JP2009099944A (ja) 2009-05-07
JP2009099944A5 JP2009099944A5 (https=) 2011-01-13
JP4759598B2 true JP4759598B2 (ja) 2011-08-31

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JP2008196038A Expired - Fee Related JP4759598B2 (ja) 2007-09-28 2008-07-30 薄膜トランジスタ、その製造方法及びそれを用いた表示装置
JP2011031543A Expired - Fee Related JP5395825B2 (ja) 2007-09-28 2011-02-17 薄膜トランジスタ、その製造方法及びそれを用いた表示装置

Family Applications After (1)

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JP2011031543A Expired - Fee Related JP5395825B2 (ja) 2007-09-28 2011-02-17 薄膜トランジスタ、その製造方法及びそれを用いた表示装置

Country Status (7)

Country Link
US (2) US8563977B2 (https=)
EP (1) EP2195848B1 (https=)
JP (2) JP4759598B2 (https=)
KR (1) KR101148718B1 (https=)
CN (1) CN101809747B (https=)
TW (1) TWI377683B (https=)
WO (1) WO2009041544A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011146724A (ja) * 2007-09-28 2011-07-28 Canon Inc 薄膜トランジスタ、その製造方法及びそれを用いた表示装置

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2256795B1 (en) * 2009-05-29 2014-11-19 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method for oxide semiconductor device
JP5424724B2 (ja) 2009-06-04 2014-02-26 富士フイルム株式会社 電界効果型トランジスタの製造方法、電界効果型トランジスタ、表示装置、及び電磁波検出器
JPWO2011001715A1 (ja) * 2009-06-29 2012-12-13 シャープ株式会社 酸化物半導体、薄膜トランジスタアレイ基板及びその製造方法、並びに、表示装置
KR102011616B1 (ko) 2009-06-30 2019-08-16 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 제조 방법
WO2011001881A1 (en) 2009-06-30 2011-01-06 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
KR101810699B1 (ko) 2009-06-30 2018-01-25 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 제작 방법
EP2449594B1 (en) * 2009-06-30 2019-08-21 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP5663214B2 (ja) * 2009-07-03 2015-02-04 株式会社半導体エネルギー研究所 半導体装置の作製方法
WO2011004723A1 (en) * 2009-07-10 2011-01-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method the same
KR20210131462A (ko) 2009-07-10 2021-11-02 가부시키가이샤 한도오따이 에네루기 켄큐쇼 액정 표시 장치의 제작 방법
US8115883B2 (en) 2009-08-27 2012-02-14 Semiconductor Energy Laboratory Co., Ltd. Display device and method for manufacturing the same
WO2011027656A1 (en) 2009-09-04 2011-03-10 Semiconductor Energy Laboratory Co., Ltd. Transistor and display device
WO2011027664A1 (en) * 2009-09-04 2011-03-10 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and method for manufacturing the same
CN102484140B (zh) 2009-09-04 2015-04-22 株式会社半导体能源研究所 半导体器件的制造方法
KR20250030527A (ko) 2009-09-04 2025-03-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 장치 및 발광 장치를 제작하기 위한 방법
WO2011033911A1 (en) * 2009-09-16 2011-03-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
KR102293198B1 (ko) * 2009-09-16 2021-08-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제조 방법
CN105679834A (zh) * 2009-09-16 2016-06-15 株式会社半导体能源研究所 晶体管及显示设备
KR101809759B1 (ko) * 2009-09-24 2018-01-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 소자 및 그 제조 방법
WO2011037008A1 (en) * 2009-09-24 2011-03-31 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing oxide semiconductor film and method for manufacturing semiconductor device
KR20220127372A (ko) * 2009-09-24 2022-09-19 가부시키가이샤 한도오따이 에네루기 켄큐쇼 산화물 반도체막 및 반도체 장치
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WO2011043163A1 (en) * 2009-10-05 2011-04-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
CN102484139B (zh) * 2009-10-08 2016-07-06 株式会社半导体能源研究所 氧化物半导体层及半导体装置
WO2011043194A1 (en) 2009-10-09 2011-04-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR101396096B1 (ko) 2009-10-09 2014-05-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제조 방법
WO2011043206A1 (en) * 2009-10-09 2011-04-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2011046025A1 (en) 2009-10-16 2011-04-21 Semiconductor Energy Laboratory Co., Ltd. Logic circuit and semiconductor device
KR102005736B1 (ko) * 2009-10-16 2019-07-31 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 제작 방법
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KR101876470B1 (ko) * 2009-11-06 2018-07-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR102220606B1 (ko) 2009-11-06 2021-03-02 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
CN102668097B (zh) * 2009-11-13 2015-08-12 株式会社半导体能源研究所 半导体器件及其制造方法
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KR101835300B1 (ko) * 2009-12-08 2018-03-08 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
KR101511076B1 (ko) * 2009-12-08 2015-04-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
WO2011074590A1 (en) * 2009-12-17 2011-06-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, measurement apparatus, and measurement method of relative permittivity
WO2011074409A1 (en) * 2009-12-18 2011-06-23 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
WO2011077966A1 (en) 2009-12-25 2011-06-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR101473684B1 (ko) 2009-12-25 2014-12-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR102480794B1 (ko) 2009-12-28 2022-12-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 기억 장치와 반도체 장치
CN102668098B (zh) * 2009-12-28 2015-07-22 株式会社半导体能源研究所 制造半导体装置的方法
US8879010B2 (en) 2010-01-24 2014-11-04 Semiconductor Energy Laboratory Co., Ltd. Display device
KR102008754B1 (ko) * 2010-01-24 2019-08-09 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치와 이의 제조 방법
KR102420689B1 (ko) 2010-02-26 2022-07-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
WO2011118509A1 (en) 2010-03-26 2011-09-29 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP5731244B2 (ja) * 2010-03-26 2015-06-10 株式会社半導体エネルギー研究所 半導体装置の作製方法
KR101465192B1 (ko) * 2010-04-09 2014-11-25 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
CN106057907B (zh) 2010-04-23 2019-10-22 株式会社半导体能源研究所 半导体装置的制造方法
WO2011132625A1 (en) 2010-04-23 2011-10-27 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
WO2011142467A1 (en) * 2010-05-14 2011-11-17 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
WO2011145467A1 (en) * 2010-05-21 2011-11-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8779478B2 (en) 2010-06-01 2014-07-15 Sharp Kabushiki Kaisha Thin film transistor
JP2012015491A (ja) * 2010-06-04 2012-01-19 Semiconductor Energy Lab Co Ltd 光電変換装置
US8669553B2 (en) * 2010-07-02 2014-03-11 Hewlett-Packard Development Company, L.P. Thin film transistors
US8450123B2 (en) * 2010-08-27 2013-05-28 Semiconductor Energy Laboratory Co., Ltd. Oxygen diffusion evaluation method of oxide film stacked body
US8728860B2 (en) 2010-09-03 2014-05-20 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
WO2012029612A1 (en) * 2010-09-03 2012-03-08 Semiconductor Energy Laboratory Co., Ltd. Sputtering target and method for manufacturing semiconductor device
JP5969745B2 (ja) * 2010-09-10 2016-08-17 株式会社半導体エネルギー研究所 半導体装置
US8936965B2 (en) * 2010-11-26 2015-01-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8823092B2 (en) * 2010-11-30 2014-09-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
WO2012086513A1 (ja) * 2010-12-20 2012-06-28 シャープ株式会社 半導体装置および表示装置
JP2012146956A (ja) * 2010-12-20 2012-08-02 Canon Inc チャネルエッチ型薄膜トランジスタとその製造方法
JP5189674B2 (ja) * 2010-12-28 2013-04-24 出光興産株式会社 酸化物半導体薄膜層を有する積層構造、積層構造の製造方法、薄膜トランジスタ及び表示装置
JP5186611B2 (ja) * 2010-12-28 2013-04-17 出光興産株式会社 酸化物半導体薄膜層を有する積層構造、積層構造の製造方法、薄膜トランジスタ及び表示装置
US9236496B2 (en) 2011-03-11 2016-01-12 Sharp Kabushiki Kaisha Thin film transistor and display device
DE112012004076T5 (de) * 2011-09-29 2014-07-03 Semiconductor Energy Laboratory Co., Ltd. Halbleitervorrichtung
KR101942980B1 (ko) 2012-01-17 2019-01-29 삼성디스플레이 주식회사 반도체 디바이스 및 그 형성 방법
US9276126B2 (en) * 2012-01-31 2016-03-01 Sharp Kabushiki Kaisha Semiconductor device and method for producing same
WO2013115052A1 (ja) * 2012-01-31 2013-08-08 シャープ株式会社 半導体装置およびその製造方法
TWI562361B (en) 2012-02-02 2016-12-11 Semiconductor Energy Lab Co Ltd Semiconductor device
TWI445181B (zh) * 2012-02-08 2014-07-11 E Ink Holdings Inc 薄膜電晶體
CN103296064A (zh) * 2012-02-29 2013-09-11 鸿富锦精密工业（深圳）有限公司 薄膜晶体管
KR20130111874A (ko) 2012-04-02 2013-10-11 삼성디스플레이 주식회사 박막 트랜지스터, 이를 포함하는 박막 트랜지스터 표시판 및 표시 장치, 그리고 박막 트랜지스터의 제조 방법
US9553201B2 (en) 2012-04-02 2017-01-24 Samsung Display Co., Ltd. Thin film transistor, thin film transistor array panel, and manufacturing method of thin film transistor
JP5722293B2 (ja) 2012-10-19 2015-05-20 株式会社神戸製鋼所 薄膜トランジスタ
JPWO2014125820A1 (ja) * 2013-02-13 2017-02-02 出光興産株式会社 薄膜トランジスタ
KR102244553B1 (ko) * 2013-08-23 2021-04-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 용량 소자 및 반도체 장치
TWI566413B (zh) * 2013-09-09 2017-01-11 元太科技工業股份有限公司 薄膜電晶體
US9691906B2 (en) * 2013-10-24 2017-06-27 Joled Inc. Method for producing thin film transistor
WO2015186354A1 (ja) * 2014-06-03 2015-12-10 株式会社Ｊｏｌｅｄ 薄膜トランジスタ及びその製造方法
JP5940124B2 (ja) * 2014-09-04 2016-06-29 株式会社半導体エネルギー研究所 トランジスタの作製方法
CN106796959A (zh) 2014-10-08 2017-05-31 夏普株式会社 半导体装置及其制造方法
CN105870201B (zh) * 2016-06-08 2019-01-22 深圳市华星光电技术有限公司 Tft器件结构及其制作方法
KR102458660B1 (ko) 2016-08-03 2022-10-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치 및 전자 기기
CN106374044B (zh) * 2016-11-02 2019-06-11 杭州潮盛科技有限公司 半导体结构及其制备方法
CN109346412B (zh) * 2018-09-30 2022-05-06 南京京东方显示技术有限公司 一种薄膜晶体管的制造方法及薄膜晶体管

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05299657A (ja) 1992-04-13 1993-11-12 Nec Corp 電界効果型薄膜トランジスタ素子
JPH0758336A (ja) * 1993-08-19 1995-03-03 Toshiba Corp 薄膜トランジスタ及びその製造方法
JP3788021B2 (ja) * 1998-03-30 2006-06-21 セイコーエプソン株式会社 薄膜トランジスタおよびその製造方法
DE10041699A1 (de) * 2000-08-24 2002-03-21 Infineon Technologies Ag Niedertemperatur-Prozessierung ferroelektrischer Strontium-Wismuth-Tantalat-Schichten und Herstellung ferroelektrischer Bauelemente daraus
US7189992B2 (en) * 2002-05-21 2007-03-13 State Of Oregon Acting By And Through The Oregon State Board Of Higher Education On Behalf Of Oregon State University Transistor structures having a transparent channel
US7541614B2 (en) * 2003-03-11 2009-06-02 Semiconductor Energy Laboratory Co., Ltd. Integrated circuit, semiconductor device comprising the same, electronic device having the same, and driving method of the same
JP4108633B2 (ja) * 2003-06-20 2008-06-25 シャープ株式会社 薄膜トランジスタおよびその製造方法ならびに電子デバイス
US7262463B2 (en) 2003-07-25 2007-08-28 Hewlett-Packard Development Company, L.P. Transistor including a deposited channel region having a doped portion
US7242039B2 (en) * 2004-03-12 2007-07-10 Hewlett-Packard Development Company, L.P. Semiconductor device
US7297977B2 (en) * 2004-03-12 2007-11-20 Hewlett-Packard Development Company, L.P. Semiconductor device
US7282782B2 (en) * 2004-03-12 2007-10-16 Hewlett-Packard Development Company, L.P. Combined binary oxide semiconductor device
KR20070116888A (ko) * 2004-03-12 2007-12-11 도꾸리쯔교세이호징 가가꾸 기쥬쯔 신꼬 기꼬 아몰퍼스 산화물 및 박막 트랜지스터
US7145174B2 (en) * 2004-03-12 2006-12-05 Hewlett-Packard Development Company, Lp. Semiconductor device
US7829444B2 (en) * 2004-11-10 2010-11-09 Canon Kabushiki Kaisha Field effect transistor manufacturing method
EP2453481B1 (en) 2004-11-10 2017-01-11 Canon Kabushiki Kaisha Field effect transistor with amorphous oxide
JP5171003B2 (ja) * 2005-01-28 2013-03-27 株式会社半導体エネルギー研究所 半導体装置
JP4870404B2 (ja) * 2005-09-02 2012-02-08 財団法人高知県産業振興センター 薄膜トランジスタの製法
JP2007073705A (ja) * 2005-09-06 2007-03-22 Canon Inc 酸化物半導体チャネル薄膜トランジスタおよびその製造方法
JP5015473B2 (ja) * 2006-02-15 2012-08-29 財団法人高知県産業振興センター 薄膜トランジスタアレイ及びその製法
JP4609797B2 (ja) * 2006-08-09 2011-01-12 Ｎｅｃ液晶テクノロジー株式会社 薄膜デバイス及びその製造方法
KR101410926B1 (ko) * 2007-02-16 2014-06-24 삼성전자주식회사 박막 트랜지스터 및 그 제조방법
JP5121254B2 (ja) * 2007-02-28 2013-01-16 キヤノン株式会社 薄膜トランジスタおよび表示装置
JP4759598B2 (ja) 2007-09-28 2011-08-31 キヤノン株式会社 薄膜トランジスタ、その製造方法及びそれを用いた表示装置
US20090090915A1 (en) * 2007-10-05 2009-04-09 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor, display device having thin film transistor, and method for manufacturing the same
JP5202630B2 (ja) * 2008-06-10 2013-06-05 Ｊｘ日鉱日石金属株式会社 スパッタリング用酸化物焼結体ターゲット及びその製造方法
US7977868B2 (en) * 2008-07-23 2011-07-12 Cbrite Inc. Active matrix organic light emitting device with MO TFT backplane

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011146724A (ja) * 2007-09-28 2011-07-28 Canon Inc 薄膜トランジスタ、その製造方法及びそれを用いた表示装置
US8563977B2 (en) 2007-09-28 2013-10-22 Canon Kabushiki Kaisha Thin film transistor having a two-layer semiconductor with columnar structures, manufacturing method therefor, and display apparatus using the same

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