JP4759598B2 - 薄膜トランジスタ、その製造方法及びそれを用いた表示装置 - Google Patents

薄膜トランジスタ、その製造方法及びそれを用いた表示装置 Download PDF

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Publication number
JP4759598B2
JP4759598B2 JP2008196038A JP2008196038A JP4759598B2 JP 4759598 B2 JP4759598 B2 JP 4759598B2 JP 2008196038 A JP2008196038 A JP 2008196038A JP 2008196038 A JP2008196038 A JP 2008196038A JP 4759598 B2 JP4759598 B2 JP 4759598B2
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JP
Japan
Prior art keywords
layer
semiconductor layer
thin film
film transistor
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2008196038A
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English (en)
Japanese (ja)
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JP2009099944A (ja
JP2009099944A5 (https=
Inventor
幹夫 島田
享 林
日出也 雲見
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to JP2008196038A priority Critical patent/JP4759598B2/ja
Application filed by Canon Inc filed Critical Canon Inc
Priority to KR1020107008596A priority patent/KR101148718B1/ko
Priority to PCT/JP2008/067363 priority patent/WO2009041544A1/en
Priority to EP08833155A priority patent/EP2195848B1/en
Priority to CN2008801082923A priority patent/CN101809747B/zh
Priority to US12/672,103 priority patent/US8563977B2/en
Priority to TW097136880A priority patent/TWI377683B/zh
Publication of JP2009099944A publication Critical patent/JP2009099944A/ja
Publication of JP2009099944A5 publication Critical patent/JP2009099944A5/ja
Application granted granted Critical
Publication of JP4759598B2 publication Critical patent/JP4759598B2/ja
Priority to US13/369,406 priority patent/US20120132911A1/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H10D30/6756—Amorphous oxide semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/014—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/817—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering

Landscapes

  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
JP2008196038A 2007-09-28 2008-07-30 薄膜トランジスタ、その製造方法及びそれを用いた表示装置 Expired - Fee Related JP4759598B2 (ja)

Priority Applications (8)

Application Number Priority Date Filing Date Title
JP2008196038A JP4759598B2 (ja) 2007-09-28 2008-07-30 薄膜トランジスタ、その製造方法及びそれを用いた表示装置
PCT/JP2008/067363 WO2009041544A1 (en) 2007-09-28 2008-09-18 Thin film transistor, manufacturing method therefor, and display apparatus using the same
EP08833155A EP2195848B1 (en) 2007-09-28 2008-09-18 Thin film transistor, manufacturing method therefor, and display apparatus using the same
CN2008801082923A CN101809747B (zh) 2007-09-28 2008-09-18 薄膜晶体管、其制造方法和使用薄膜晶体管的显示装置
KR1020107008596A KR101148718B1 (ko) 2007-09-28 2008-09-18 박막 트랜지스터, 그 제조 방법 및 그것을 사용한 표시 장치
US12/672,103 US8563977B2 (en) 2007-09-28 2008-09-18 Thin film transistor having a two-layer semiconductor with columnar structures, manufacturing method therefor, and display apparatus using the same
TW097136880A TWI377683B (en) 2007-09-28 2008-09-25 Thin film transistor, manufacturing method therefor, and display apparatus using the same
US13/369,406 US20120132911A1 (en) 2007-09-28 2012-02-09 Thin film transistor having a two-layer semiconductor, manufacturing method therefor, and display apparatus using the same

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2007254364 2007-09-28
JP2007254364 2007-09-28
JP2008196038A JP4759598B2 (ja) 2007-09-28 2008-07-30 薄膜トランジスタ、その製造方法及びそれを用いた表示装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2011031543A Division JP5395825B2 (ja) 2007-09-28 2011-02-17 薄膜トランジスタ、その製造方法及びそれを用いた表示装置

Publications (3)

Publication Number Publication Date
JP2009099944A JP2009099944A (ja) 2009-05-07
JP2009099944A5 JP2009099944A5 (https=) 2011-01-13
JP4759598B2 true JP4759598B2 (ja) 2011-08-31

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Family Applications (2)

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JP2008196038A Expired - Fee Related JP4759598B2 (ja) 2007-09-28 2008-07-30 薄膜トランジスタ、その製造方法及びそれを用いた表示装置
JP2011031543A Expired - Fee Related JP5395825B2 (ja) 2007-09-28 2011-02-17 薄膜トランジスタ、その製造方法及びそれを用いた表示装置

Family Applications After (1)

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JP2011031543A Expired - Fee Related JP5395825B2 (ja) 2007-09-28 2011-02-17 薄膜トランジスタ、その製造方法及びそれを用いた表示装置

Country Status (7)

Country Link
US (2) US8563977B2 (https=)
EP (1) EP2195848B1 (https=)
JP (2) JP4759598B2 (https=)
KR (1) KR101148718B1 (https=)
CN (1) CN101809747B (https=)
TW (1) TWI377683B (https=)
WO (1) WO2009041544A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011146724A (ja) * 2007-09-28 2011-07-28 Canon Inc 薄膜トランジスタ、その製造方法及びそれを用いた表示装置

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* Cited by examiner, † Cited by third party
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CN102473727B (zh) * 2009-06-29 2015-04-01 夏普株式会社 氧化物半导体、薄膜晶体管阵列基板及其制造方法和显示装置
KR101457837B1 (ko) 2009-06-30 2014-11-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 제작 방법
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CN111081550A (zh) 2009-06-30 2020-04-28 株式会社半导体能源研究所 用于制造半导体器件的方法及半导体器件
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