TWI377683B - Thin film transistor, manufacturing method therefor, and display apparatus using the same - Google Patents

Thin film transistor, manufacturing method therefor, and display apparatus using the same Download PDF

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Publication number
TWI377683B
TWI377683B TW097136880A TW97136880A TWI377683B TW I377683 B TWI377683 B TW I377683B TW 097136880 A TW097136880 A TW 097136880A TW 97136880 A TW97136880 A TW 97136880A TW I377683 B TWI377683 B TW I377683B
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TW
Taiwan
Prior art keywords
layer
semiconductor layer
semiconductor
forming
thin film
Prior art date
Application number
TW097136880A
Other languages
English (en)
Chinese (zh)
Other versions
TW200929546A (en
Inventor
Mikio Shimada
Ryo Hayashi
Hideya Kumomi
Original Assignee
Canon Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Kk filed Critical Canon Kk
Publication of TW200929546A publication Critical patent/TW200929546A/zh
Application granted granted Critical
Publication of TWI377683B publication Critical patent/TWI377683B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H10D30/6756—Amorphous oxide semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/014—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/817—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering

Landscapes

  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
TW097136880A 2007-09-28 2008-09-25 Thin film transistor, manufacturing method therefor, and display apparatus using the same TWI377683B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007254364 2007-09-28
JP2008196038A JP4759598B2 (ja) 2007-09-28 2008-07-30 薄膜トランジスタ、その製造方法及びそれを用いた表示装置

Publications (2)

Publication Number Publication Date
TW200929546A TW200929546A (en) 2009-07-01
TWI377683B true TWI377683B (en) 2012-11-21

Family

ID=40702613

Family Applications (1)

Application Number Title Priority Date Filing Date
TW097136880A TWI377683B (en) 2007-09-28 2008-09-25 Thin film transistor, manufacturing method therefor, and display apparatus using the same

Country Status (7)

Country Link
US (2) US8563977B2 (https=)
EP (1) EP2195848B1 (https=)
JP (2) JP4759598B2 (https=)
KR (1) KR101148718B1 (https=)
CN (1) CN101809747B (https=)
TW (1) TWI377683B (https=)
WO (1) WO2009041544A1 (https=)

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JP2009099944A (ja) 2009-05-07
KR101148718B1 (ko) 2012-05-21
CN101809747A (zh) 2010-08-18
JP4759598B2 (ja) 2011-08-31
TW200929546A (en) 2009-07-01
US8563977B2 (en) 2013-10-22
KR20100061559A (ko) 2010-06-07
EP2195848A1 (en) 2010-06-16
US20120132911A1 (en) 2012-05-31
EP2195848B1 (en) 2012-07-18
US20100213459A1 (en) 2010-08-26
WO2009041544A1 (en) 2009-04-02
CN101809747B (zh) 2012-12-26
JP2011146724A (ja) 2011-07-28

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