JP2009099944A5 - - Google Patents

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Publication number
JP2009099944A5
JP2009099944A5 JP2008196038A JP2008196038A JP2009099944A5 JP 2009099944 A5 JP2009099944 A5 JP 2009099944A5 JP 2008196038 A JP2008196038 A JP 2008196038A JP 2008196038 A JP2008196038 A JP 2008196038A JP 2009099944 A5 JP2009099944 A5 JP 2009099944A5
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Japan
Prior art keywords
thin film
film transistor
semiconductor layer
layer
forming
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JP2008196038A
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English (en)
Japanese (ja)
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JP2009099944A (ja
JP4759598B2 (ja
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Priority claimed from JP2008196038A external-priority patent/JP4759598B2/ja
Priority to JP2008196038A priority Critical patent/JP4759598B2/ja
Priority to PCT/JP2008/067363 priority patent/WO2009041544A1/en
Priority to CN2008801082923A priority patent/CN101809747B/zh
Priority to EP08833155A priority patent/EP2195848B1/en
Priority to US12/672,103 priority patent/US8563977B2/en
Priority to KR1020107008596A priority patent/KR101148718B1/ko
Priority to TW097136880A priority patent/TWI377683B/zh
Publication of JP2009099944A publication Critical patent/JP2009099944A/ja
Publication of JP2009099944A5 publication Critical patent/JP2009099944A5/ja
Publication of JP4759598B2 publication Critical patent/JP4759598B2/ja
Application granted granted Critical
Priority to US13/369,406 priority patent/US20120132911A1/en
Expired - Fee Related legal-status Critical Current
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JP2008196038A 2007-09-28 2008-07-30 薄膜トランジスタ、その製造方法及びそれを用いた表示装置 Expired - Fee Related JP4759598B2 (ja)

Priority Applications (8)

Application Number Priority Date Filing Date Title
JP2008196038A JP4759598B2 (ja) 2007-09-28 2008-07-30 薄膜トランジスタ、その製造方法及びそれを用いた表示装置
PCT/JP2008/067363 WO2009041544A1 (en) 2007-09-28 2008-09-18 Thin film transistor, manufacturing method therefor, and display apparatus using the same
CN2008801082923A CN101809747B (zh) 2007-09-28 2008-09-18 薄膜晶体管、其制造方法和使用薄膜晶体管的显示装置
EP08833155A EP2195848B1 (en) 2007-09-28 2008-09-18 Thin film transistor, manufacturing method therefor, and display apparatus using the same
US12/672,103 US8563977B2 (en) 2007-09-28 2008-09-18 Thin film transistor having a two-layer semiconductor with columnar structures, manufacturing method therefor, and display apparatus using the same
KR1020107008596A KR101148718B1 (ko) 2007-09-28 2008-09-18 박막 트랜지스터, 그 제조 방법 및 그것을 사용한 표시 장치
TW097136880A TWI377683B (en) 2007-09-28 2008-09-25 Thin film transistor, manufacturing method therefor, and display apparatus using the same
US13/369,406 US20120132911A1 (en) 2007-09-28 2012-02-09 Thin film transistor having a two-layer semiconductor, manufacturing method therefor, and display apparatus using the same

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2007254364 2007-09-28
JP2007254364 2007-09-28
JP2008196038A JP4759598B2 (ja) 2007-09-28 2008-07-30 薄膜トランジスタ、その製造方法及びそれを用いた表示装置

Related Child Applications (1)

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JP2011031543A Division JP5395825B2 (ja) 2007-09-28 2011-02-17 薄膜トランジスタ、その製造方法及びそれを用いた表示装置

Publications (3)

Publication Number Publication Date
JP2009099944A JP2009099944A (ja) 2009-05-07
JP2009099944A5 true JP2009099944A5 (https=) 2011-01-13
JP4759598B2 JP4759598B2 (ja) 2011-08-31

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JP2008196038A Expired - Fee Related JP4759598B2 (ja) 2007-09-28 2008-07-30 薄膜トランジスタ、その製造方法及びそれを用いた表示装置
JP2011031543A Expired - Fee Related JP5395825B2 (ja) 2007-09-28 2011-02-17 薄膜トランジスタ、その製造方法及びそれを用いた表示装置

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Country Status (7)

Country Link
US (2) US8563977B2 (https=)
EP (1) EP2195848B1 (https=)
JP (2) JP4759598B2 (https=)
KR (1) KR101148718B1 (https=)
CN (1) CN101809747B (https=)
TW (1) TWI377683B (https=)
WO (1) WO2009041544A1 (https=)

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KR102142450B1 (ko) * 2009-10-30 2020-08-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작방법
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KR102220606B1 (ko) 2009-11-06 2021-03-02 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
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US8853683B2 (en) 2009-12-17 2014-10-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, measurement apparatus, and measurement method of relative permittivity

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