JP4758046B2 - 均一なプロセス速度を生成するためのプラズマ処理装置及びアンテナ構成 - Google Patents

均一なプロセス速度を生成するためのプラズマ処理装置及びアンテナ構成 Download PDF

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JP4758046B2
JP4758046B2 JP2001545337A JP2001545337A JP4758046B2 JP 4758046 B2 JP4758046 B2 JP 4758046B2 JP 2001545337 A JP2001545337 A JP 2001545337A JP 2001545337 A JP2001545337 A JP 2001545337A JP 4758046 B2 JP4758046 B2 JP 4758046B2
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winding
antenna
plasma processing
processing apparatus
plasma
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JP2003517197A5 (enExample
JP2003517197A (ja
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ベイリー・アンドリュー・ディ．，スリー
シェップ・アラン・エム．
クチ・アンドラス
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Lam Research Corp
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Lam Research Corp
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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32467—Material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
JP2001545337A 1999-11-15 2000-11-14 均一なプロセス速度を生成するためのプラズマ処理装置及びアンテナ構成 Expired - Lifetime JP4758046B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/440,418 US6320320B1 (en) 1999-11-15 1999-11-15 Method and apparatus for producing uniform process rates
US09/440,418 1999-11-15
PCT/US2000/042174 WO2001045134A2 (en) 1999-11-15 2000-11-14 Method and apparatus for producing uniform process rates

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JP2011095143A Division JP5309179B2 (ja) 1999-11-15 2011-04-21 均一なプロセス速度を生成するためのプラズマ処理装置及び結合窓構成

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JP2003517197A JP2003517197A (ja) 2003-05-20
JP2003517197A5 JP2003517197A5 (enExample) 2011-02-17
JP4758046B2 true JP4758046B2 (ja) 2011-08-24

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JP2011095143A Expired - Lifetime JP5309179B2 (ja) 1999-11-15 2011-04-21 均一なプロセス速度を生成するためのプラズマ処理装置及び結合窓構成

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US (2) US6320320B1 (enExample)
EP (1) EP1230668B1 (enExample)
JP (2) JP4758046B2 (enExample)
KR (1) KR100826488B1 (enExample)
CN (1) CN1227710C (enExample)
AU (1) AU4902801A (enExample)
TW (1) TW507253B (enExample)
WO (1) WO2001045134A2 (enExample)

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TW507253B (en) 2002-10-21
JP2011175977A (ja) 2011-09-08
KR100826488B1 (ko) 2008-05-02
EP1230668B1 (en) 2012-11-07
US6320320B1 (en) 2001-11-20

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