JP4744700B2 - 薄膜半導体装置及び薄膜半導体装置を含む画像表示装置 - Google Patents

薄膜半導体装置及び薄膜半導体装置を含む画像表示装置 Download PDF

Info

Publication number
JP4744700B2
JP4744700B2 JP2001019570A JP2001019570A JP4744700B2 JP 4744700 B2 JP4744700 B2 JP 4744700B2 JP 2001019570 A JP2001019570 A JP 2001019570A JP 2001019570 A JP2001019570 A JP 2001019570A JP 4744700 B2 JP4744700 B2 JP 4744700B2
Authority
JP
Japan
Prior art keywords
film
semiconductor
thin film
channel region
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2001019570A
Other languages
English (en)
Japanese (ja)
Other versions
JP2002222959A5 (enExample
JP2002222959A (ja
Inventor
睦子 波多野
伸也 山口
嘉伸 木村
成基 朴
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP2001019570A priority Critical patent/JP4744700B2/ja
Priority to US09/791,853 priority patent/US6756614B2/en
Priority to TW090104427A priority patent/TW480730B/zh
Priority to EP01104444A priority patent/EP1227516A2/en
Priority to KR1020010010416A priority patent/KR100779319B1/ko
Publication of JP2002222959A publication Critical patent/JP2002222959A/ja
Priority to US10/670,356 priority patent/US7115454B2/en
Priority to US10/862,399 priority patent/US7172932B2/en
Priority to KR1020060019457A priority patent/KR100779318B1/ko
Priority to KR1020060019461A priority patent/KR100821813B1/ko
Priority to US11/589,800 priority patent/US7556993B2/en
Publication of JP2002222959A5 publication Critical patent/JP2002222959A5/ja
Priority to US12/498,692 priority patent/US7859016B2/en
Application granted granted Critical
Publication of JP4744700B2 publication Critical patent/JP4744700B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
    • B23K26/0622—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H01L21/02686—Pulsed laser beam
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6731—Top-gate only TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H10D30/6745—Polycrystalline or microcrystalline silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0221—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies
    • H10D86/0223—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials
    • H10D86/0227—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials using structural arrangements to control crystal growth, e.g. placement of grain filters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0221—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies
    • H10D86/0223—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials
    • H10D86/0229—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials characterised by control of the annealing or irradiation parameters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0251—Manufacture or treatment of multiple TFTs characterised by increasing the uniformity of device parameters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02691—Scanning of a beam

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Recrystallisation Techniques (AREA)
  • Thin Film Transistor (AREA)
JP2001019570A 2001-01-29 2001-01-29 薄膜半導体装置及び薄膜半導体装置を含む画像表示装置 Expired - Fee Related JP4744700B2 (ja)

Priority Applications (11)

Application Number Priority Date Filing Date Title
JP2001019570A JP4744700B2 (ja) 2001-01-29 2001-01-29 薄膜半導体装置及び薄膜半導体装置を含む画像表示装置
US09/791,853 US6756614B2 (en) 2001-01-29 2001-02-26 Thin film semiconductor device, polycrystalline semiconductor thin film production process and production apparatus
TW090104427A TW480730B (en) 2001-01-29 2001-02-27 Thin film semiconductor device, polycrystalline semiconductor thin film production process and production apparatus
EP01104444A EP1227516A2 (en) 2001-01-29 2001-02-27 Thin film semiconductor device, production process and production apparatus
KR1020010010416A KR100779319B1 (ko) 2001-01-29 2001-02-28 박막 반도체 장치 및 화상 표시 장치
US10/670,356 US7115454B2 (en) 2001-01-29 2003-09-26 Thin film semiconductor device, polycrystalline semiconductor thin film production and process and production apparatus
US10/862,399 US7172932B2 (en) 2001-01-29 2004-06-08 Thin film semiconductor device, polycrystalline semiconductor thin film production process and production apparatus
KR1020060019457A KR100779318B1 (ko) 2001-01-29 2006-02-28 박막 반도체 장치를 이용한 화상 표시 장치의 제조 방법
KR1020060019461A KR100821813B1 (ko) 2001-01-29 2006-02-28 반도체 박막 장치를 이용한 화상 표시 장치의 제조 방법
US11/589,800 US7556993B2 (en) 2001-01-29 2006-10-31 Thin film semiconductor device, polycrystalline semiconductor thin film production process and production apparatus
US12/498,692 US7859016B2 (en) 2001-01-29 2009-07-07 Thin film semiconductor device, polycrystalline semiconductor thin film production process and production apparatus

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2001019570A JP4744700B2 (ja) 2001-01-29 2001-01-29 薄膜半導体装置及び薄膜半導体装置を含む画像表示装置
US09/791,853 US6756614B2 (en) 2001-01-29 2001-02-26 Thin film semiconductor device, polycrystalline semiconductor thin film production process and production apparatus

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP2008065908A Division JP5091730B2 (ja) 2008-03-14 2008-03-14 薄膜半導体装置を用いた画像表示装置の製造方法
JP2008065907A Division JP4763740B2 (ja) 2008-03-14 2008-03-14 薄膜半導体装置及び薄膜半導体装置を用いた画像表示装置

Publications (3)

Publication Number Publication Date
JP2002222959A JP2002222959A (ja) 2002-08-09
JP2002222959A5 JP2002222959A5 (enExample) 2008-05-01
JP4744700B2 true JP4744700B2 (ja) 2011-08-10

Family

ID=26608416

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001019570A Expired - Fee Related JP4744700B2 (ja) 2001-01-29 2001-01-29 薄膜半導体装置及び薄膜半導体装置を含む画像表示装置

Country Status (5)

Country Link
US (5) US6756614B2 (enExample)
EP (1) EP1227516A2 (enExample)
JP (1) JP4744700B2 (enExample)
KR (3) KR100779319B1 (enExample)
TW (1) TW480730B (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020106756A1 (en) * 2018-11-20 2020-05-28 Micron Technology, Inc. Integrated assemblies having semiconductor oxide channel material, and methods of forming integrated assemblies
US11556002B2 (en) 2019-07-30 2023-01-17 Samsung Display Co., Ltd. Laser annealing apparatus and method of manufacturing substrate having poly-si layer using the same

Families Citing this family (91)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5854803A (en) * 1995-01-12 1998-12-29 Semiconductor Energy Laboratory Co., Ltd. Laser illumination system
US6555449B1 (en) 1996-05-28 2003-04-29 Trustees Of Columbia University In The City Of New York Methods for producing uniform large-grained and grain boundary location manipulated polycrystalline thin film semiconductors using sequential lateral solidfication
US6830993B1 (en) 2000-03-21 2004-12-14 The Trustees Of Columbia University In The City Of New York Surface planarization of thin silicon films during and after processing by the sequential lateral solidification method
MXPA02005590A (es) 2000-10-10 2002-09-30 Univ Columbia Metodo y aparato para procesar capas de metal delgadas.
JP4744700B2 (ja) * 2001-01-29 2011-08-10 株式会社日立製作所 薄膜半導体装置及び薄膜半導体装置を含む画像表示装置
US20020117718A1 (en) * 2001-02-28 2002-08-29 Apostolos Voutsas Method of forming predominantly <100> polycrystalline silicon thin film transistors
JP3903761B2 (ja) 2001-10-10 2007-04-11 株式会社日立製作所 レ−ザアニ−ル方法およびレ−ザアニ−ル装置
US7050878B2 (en) 2001-11-22 2006-05-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductror fabricating apparatus
US7133737B2 (en) 2001-11-30 2006-11-07 Semiconductor Energy Laboratory Co., Ltd. Program for controlling laser apparatus and recording medium for recording program for controlling laser apparatus and capable of being read out by computer
KR100967824B1 (ko) 2001-11-30 2010-07-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치의 제작방법
JP2003168645A (ja) * 2001-12-03 2003-06-13 Hitachi Ltd 半導体薄膜装置、その製造方法及び画像表示装置
US7214573B2 (en) * 2001-12-11 2007-05-08 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device that includes patterning sub-islands
JP4011344B2 (ja) * 2001-12-28 2007-11-21 株式会社半導体エネルギー研究所 半導体装置の作製方法
EP1326273B1 (en) 2001-12-28 2012-01-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US6933527B2 (en) 2001-12-28 2005-08-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and semiconductor device production system
US6841797B2 (en) * 2002-01-17 2005-01-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device formed over a surface with a drepession portion and a projection portion
US6847050B2 (en) 2002-03-15 2005-01-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor element and semiconductor device comprising the same
JP2003282438A (ja) * 2002-03-27 2003-10-03 Seiko Epson Corp 半導体装置の製造方法及び半導体装置、電気光学装置、電子機器
JP3873811B2 (ja) * 2002-05-15 2007-01-31 日本電気株式会社 半導体装置の製造方法
JP2003332350A (ja) 2002-05-17 2003-11-21 Hitachi Ltd 薄膜半導体装置
TWI378307B (en) 2002-08-19 2012-12-01 Univ Columbia Process and system for laser crystallization processing of film regions on a substrate to minimize edge areas, and structure of such film regions
AU2003258289A1 (en) 2002-08-19 2004-03-03 The Trustees Of Columbia University In The City Of New York A single-shot semiconductor processing system and method having various irradiation patterns
JP2004087535A (ja) * 2002-08-22 2004-03-18 Sony Corp 結晶質半導体材料の製造方法および半導体装置の製造方法
JP4474108B2 (ja) 2002-09-02 2010-06-02 株式会社 日立ディスプレイズ 表示装置とその製造方法および製造装置
JP2004103628A (ja) * 2002-09-05 2004-04-02 Hitachi Ltd レーザアニール装置及びｔｆｔ基板のレーザアニール方法
FR2844920B1 (fr) * 2002-09-24 2005-08-26 Corning Inc Transistor a couche mince de silicium et son procede de fabrication
US7405114B2 (en) * 2002-10-16 2008-07-29 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation apparatus and method of manufacturing semiconductor device
US7473621B2 (en) * 2002-11-27 2009-01-06 Canon Kabushiki Kaisha Producing method for crystalline thin film
JP5164378B2 (ja) 2003-02-19 2013-03-21 ザ トラスティーズ オブ コロンビア ユニヴァーシティ イン ザ シティ オブ ニューヨーク 逐次的横方向結晶化技術を用いて結晶化させた複数の半導体薄膜フィルムを処理するシステム及びプロセス
JP4116465B2 (ja) 2003-02-20 2008-07-09 株式会社日立製作所 パネル型表示装置とその製造方法および製造装置
JP4583004B2 (ja) * 2003-05-21 2010-11-17 株式会社 日立ディスプレイズ アクティブ・マトリクス基板の製造方法
JP2004363241A (ja) * 2003-06-03 2004-12-24 Advanced Lcd Technologies Development Center Co Ltd 結晶化半導体層の形成方法及び形成装置ならびに半導体装置の製造方法
TWI344706B (en) * 2003-06-04 2011-07-01 Myung Cheol Yoo Method of fabricating vertical structure compound semiconductor devices
JP2005045209A (ja) * 2003-07-09 2005-02-17 Mitsubishi Electric Corp レーザアニール方法
WO2005029546A2 (en) 2003-09-16 2005-03-31 The Trustees Of Columbia University In The City Of New York Method and system for providing a continuous motion sequential lateral solidification for reducing or eliminating artifacts, and a mask for facilitating such artifact reduction/elimination
WO2005029551A2 (en) 2003-09-16 2005-03-31 The Trustees Of Columbia University In The City Of New York Processes and systems for laser crystallization processing of film regions on a substrate utilizing a line-type beam, and structures of such film regions
US7318866B2 (en) 2003-09-16 2008-01-15 The Trustees Of Columbia University In The City Of New York Systems and methods for inducing crystallization of thin films using multiple optical paths
US7164152B2 (en) 2003-09-16 2007-01-16 The Trustees Of Columbia University In The City Of New York Laser-irradiated thin films having variable thickness
WO2005029548A2 (en) * 2003-09-16 2005-03-31 The Trustees Of Columbia University In The City Of New York System and process for providing multiple beam sequential lateral solidification
WO2005029549A2 (en) 2003-09-16 2005-03-31 The Trustees Of Columbia University In The City Of New York Method and system for facilitating bi-directional growth
US7364952B2 (en) * 2003-09-16 2008-04-29 The Trustees Of Columbia University In The City Of New York Systems and methods for processing thin films
WO2005029547A2 (en) 2003-09-16 2005-03-31 The Trustees Of Columbia University In The City Of New York Enhancing the width of polycrystalline grains with mask
WO2005034193A2 (en) 2003-09-19 2005-04-14 The Trustees Of Columbia University In The City Ofnew York Single scan irradiation for crystallization of thin films
JP4413569B2 (ja) * 2003-09-25 2010-02-10 株式会社 日立ディスプレイズ 表示パネルの製造方法及び表示パネル
JP2005217209A (ja) * 2004-01-30 2005-08-11 Hitachi Ltd レーザアニール方法およびレーザアニール装置
WO2005104780A2 (en) * 2004-04-28 2005-11-10 Verticle, Inc Vertical structure semiconductor devices
TWI433343B (zh) * 2004-06-22 2014-04-01 維帝克股份有限公司 具有改良光輸出的垂直構造半導體裝置
JP2006024735A (ja) * 2004-07-08 2006-01-26 Seiko Instruments Inc 半導体膜の結晶化方法、及び、表示装置の製造方法
TWI389334B (zh) * 2004-11-15 2013-03-11 Verticle Inc 製造及分離半導體裝置之方法
US7645337B2 (en) 2004-11-18 2010-01-12 The Trustees Of Columbia University In The City Of New York Systems and methods for creating crystallographic-orientation controlled poly-silicon films
JP2006278532A (ja) * 2005-03-28 2006-10-12 Toshiba Corp 熱処理方法及び半導体装置の製造方法
US8221544B2 (en) 2005-04-06 2012-07-17 The Trustees Of Columbia University In The City Of New York Line scan sequential lateral solidification of thin films
TWI389316B (zh) * 2005-09-08 2013-03-11 Sharp Kk 薄膜電晶體、半導體裝置、顯示器、結晶化方法及製造薄膜電晶體方法
JP4855745B2 (ja) 2005-09-27 2012-01-18 株式会社 日立ディスプレイズ 表示装置の製造方法
JP5128767B2 (ja) * 2005-11-14 2013-01-23 株式会社ジャパンディスプレイイースト 表示装置とその製造方法
US7829909B2 (en) * 2005-11-15 2010-11-09 Verticle, Inc. Light emitting diodes and fabrication methods thereof
JP2007142027A (ja) * 2005-11-16 2007-06-07 Hitachi Displays Ltd 表示装置の製造方法
JP2007142167A (ja) * 2005-11-18 2007-06-07 Hitachi Displays Ltd 表示装置およびその製造方法
US20070117287A1 (en) * 2005-11-23 2007-05-24 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation apparatus
WO2007067541A2 (en) 2005-12-05 2007-06-14 The Trustees Of Columbia University In The City Of New York Systems and methods for processing a film, and thin films
JP2008004666A (ja) * 2006-06-21 2008-01-10 Ftl:Kk ３次元半導体デバイスの製造方法
JP2008053396A (ja) * 2006-08-24 2008-03-06 Hitachi Displays Ltd 表示装置の製造方法
TWI479660B (zh) * 2006-08-31 2015-04-01 Semiconductor Energy Lab 薄膜電晶體，其製造方法，及半導體裝置
US20080070423A1 (en) * 2006-09-15 2008-03-20 Crowder Mark A Buried seed one-shot interlevel crystallization
JP5005302B2 (ja) 2006-09-19 2012-08-22 株式会社ジャパンディスプレイイースト 表示装置の製造方法
JP2008085053A (ja) * 2006-09-27 2008-04-10 Hitachi Displays Ltd 表示装置の製造方法および表示装置
KR101397567B1 (ko) * 2007-01-24 2014-05-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체막의 결정화 방법 및 반도체장치의 제작방법
JP4411331B2 (ja) * 2007-03-19 2010-02-10 信越化学工業株式会社 磁気記録媒体用シリコン基板およびその製造方法
US8441018B2 (en) 2007-08-16 2013-05-14 The Trustees Of Columbia University In The City Of New York Direct bandgap substrates and methods of making and using
JP2009070861A (ja) * 2007-09-11 2009-04-02 Hitachi Displays Ltd 表示装置
TW200942935A (en) 2007-09-21 2009-10-16 Univ Columbia Collections of laterally crystallized semiconductor islands for use in thin film transistors and systems and methods for making same
WO2009042784A1 (en) 2007-09-25 2009-04-02 The Trustees Of Columbia University In The City Of New York Methods of producing high uniformity in thin film transistor devices fabricated on laterally crystallized thin films
WO2009067688A1 (en) 2007-11-21 2009-05-28 The Trustees Of Columbia University In The City Of New York Systems and methods for preparing epitaxially textured polycrystalline films
EP2212913A4 (en) 2007-11-21 2013-10-30 Univ Columbia SYSTEMS AND METHOD FOR PRODUCING EPITACTIC STRUCTURED THICK FILMS
US8012861B2 (en) 2007-11-21 2011-09-06 The Trustees Of Columbia University In The City Of New York Systems and methods for preparing epitaxially textured polycrystalline films
WO2009111340A2 (en) 2008-02-29 2009-09-11 The Trustees Of Columbia University In The City Of New York Flash lamp annealing crystallization for large area thin films
AU2008352028B2 (en) * 2008-03-06 2014-01-09 Amit Goyal Semiconductor-based, large-area, flexible, electronic devices on {110}less than100greater than oriented substrates
KR20110094022A (ko) 2008-11-14 2011-08-19 더 트러스티이스 오브 콜롬비아 유니버시티 인 더 시티 오브 뉴욕 박막 결정화를 위한 시스템 및 방법
EP2239084A1 (en) * 2009-04-07 2010-10-13 Excico France Method of and apparatus for irradiating a semiconductor material surface by laser energy
TW201037769A (en) * 2009-04-09 2010-10-16 Chunghwa Picture Tubes Ltd Thin film transistor and manufacturing method thereof
FR2946335B1 (fr) * 2009-06-05 2011-09-02 Saint Gobain Procede de depot de couche mince et produit obtenu.
US9087696B2 (en) 2009-11-03 2015-07-21 The Trustees Of Columbia University In The City Of New York Systems and methods for non-periodic pulse partial melt film processing
US8440581B2 (en) 2009-11-24 2013-05-14 The Trustees Of Columbia University In The City Of New York Systems and methods for non-periodic pulse sequential lateral solidification
US9646831B2 (en) 2009-11-03 2017-05-09 The Trustees Of Columbia University In The City Of New York Advanced excimer laser annealing for thin films
WO2013031198A1 (ja) 2011-08-30 2013-03-07 パナソニック株式会社 薄膜形成基板の製造方法、薄膜素子基板の製造方法、薄膜基板及び薄膜素子基板
US9111803B2 (en) 2011-10-03 2015-08-18 Joled Inc. Thin-film device, thin-film device array, and method of manufacturing thin-film device
EP4010930A4 (en) 2019-08-09 2023-03-01 Micron Technology, Inc. Transistor and methods of forming transistors
US11024736B2 (en) 2019-08-09 2021-06-01 Micron Technology, Inc. Transistor and methods of forming integrated circuitry
US10964811B2 (en) 2019-08-09 2021-03-30 Micron Technology, Inc. Transistor and methods of forming transistors
KR20210070417A (ko) 2019-12-04 2021-06-15 삼성디스플레이 주식회사 표시 장치
US11637175B2 (en) * 2020-12-09 2023-04-25 Micron Technology, Inc. Vertical transistors

Family Cites Families (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US40981A (en) * 1863-12-15 Improvement in lever-jacks
JPS5717174A (en) * 1980-07-03 1982-01-28 Hitachi Ltd Semiconductor device
JPS6091622A (ja) * 1983-10-26 1985-05-23 Hitachi Ltd 半導体基板の製造方法
JPS6450569A (en) * 1987-08-21 1989-02-27 Nec Corp Manufacture of polycrystalline silicon thin film transistor
JPS6459807A (en) * 1987-08-29 1989-03-07 Ricoh Kk Material for thin-film transistor
JPH0368167A (ja) * 1989-08-07 1991-03-25 Hitachi Ltd 半導体装置の製造方法およびそれによって得られる半導体装置
NZ234877A (en) 1989-08-28 1994-01-26 Squibb & Sons Inc Faceplate, for an ostomy device, having a convex upper surface portion
US5405454A (en) * 1992-03-19 1995-04-11 Matsushita Electric Industrial Co., Ltd. Electrically insulated silicon structure and producing method therefor
US5889298A (en) * 1993-04-30 1999-03-30 Texas Instruments Incorporated Vertical JFET field effect transistor
US5818076A (en) * 1993-05-26 1998-10-06 Semiconductor Energy Laboratory Co., Ltd. Transistor and semiconductor device
US6730549B1 (en) * 1993-06-25 2004-05-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for its preparation
US6884698B1 (en) * 1994-02-23 2005-04-26 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device with crystallization of amorphous silicon
TW305063B (enExample) * 1995-02-02 1997-05-11 Handotai Energy Kenkyusho Kk
US6524977B1 (en) * 1995-07-25 2003-02-25 Semiconductor Energy Laboratory Co., Ltd. Method of laser annealing using linear beam having quasi-trapezoidal energy profile for increased depth of focus
JP3301054B2 (ja) * 1996-02-13 2002-07-15 株式会社半導体エネルギー研究所 レーザー照射装置及びレーザー照射方法
JP3204986B2 (ja) 1996-05-28 2001-09-04 ザ トラスティース オブ コロンビア ユニヴァーシティ イン ザ シティ オブ ニューヨーク 基板上の半導体膜領域の結晶化処理及びこの方法により製造されたデバイス
JP2716036B2 (ja) * 1996-10-18 1998-02-18 株式会社日立製作所 薄膜半導体装置の製造方法
JP4017706B2 (ja) * 1997-07-14 2007-12-05 株式会社半導体エネルギー研究所 半導体装置
JP4103156B2 (ja) * 1997-09-03 2008-06-18 旭硝子株式会社 多結晶半導体薄膜、その形成方法、多結晶半導体ｔｆｔ、およびｔｆｔ基板
TW408351B (en) * 1997-10-17 2000-10-11 Semiconductor Energy Lab Semiconductor device and method of manufacturing the same
JP2000174282A (ja) * 1998-12-03 2000-06-23 Semiconductor Energy Lab Co Ltd 半導体装置
JP2001053020A (ja) * 1999-08-06 2001-02-23 Sony Corp 半導体薄膜の結晶化方法及び薄膜半導体装置の製造方法
US6573531B1 (en) * 1999-09-03 2003-06-03 The Trustees Of Columbia University In The City Of New York Systems and methods using sequential lateral solidification for producing single or polycrystalline silicon thin films at low temperatures
US6872607B2 (en) * 2000-03-21 2005-03-29 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
US6451631B1 (en) * 2000-08-10 2002-09-17 Hitachi America, Ltd. Thin film crystal growth by laser annealing
US6737672B2 (en) * 2000-08-25 2004-05-18 Fujitsu Limited Semiconductor device, manufacturing method thereof, and semiconductor manufacturing apparatus
JP4744700B2 (ja) * 2001-01-29 2011-08-10 株式会社日立製作所 薄膜半導体装置及び薄膜半導体装置を含む画像表示装置

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020106756A1 (en) * 2018-11-20 2020-05-28 Micron Technology, Inc. Integrated assemblies having semiconductor oxide channel material, and methods of forming integrated assemblies
US11329133B2 (en) 2018-11-20 2022-05-10 Micron Technology, Inc. Integrated assemblies having semiconductor oxide channel material, and methods of forming integrated assemblies
US11556002B2 (en) 2019-07-30 2023-01-17 Samsung Display Co., Ltd. Laser annealing apparatus and method of manufacturing substrate having poly-si layer using the same

Also Published As

Publication number Publication date
KR100779319B1 (ko) 2007-11-23
US7172932B2 (en) 2007-02-06
US7556993B2 (en) 2009-07-07
KR20020063472A (ko) 2002-08-03
US6756614B2 (en) 2004-06-29
KR100821813B1 (ko) 2008-04-11
US20040224453A1 (en) 2004-11-11
KR100779318B1 (ko) 2007-11-23
US7859016B2 (en) 2010-12-28
US20070105263A1 (en) 2007-05-10
KR20060031656A (ko) 2006-04-12
KR20060031655A (ko) 2006-04-12
US20020119609A1 (en) 2002-08-29
US20090269892A1 (en) 2009-10-29
EP1227516A2 (en) 2002-07-31
TW480730B (en) 2002-03-21
JP2002222959A (ja) 2002-08-09
US20040063337A1 (en) 2004-04-01
US7115454B2 (en) 2006-10-03

Similar Documents

Publication Publication Date Title
JP4744700B2 (ja) 薄膜半導体装置及び薄膜半導体装置を含む画像表示装置
US6737672B2 (en) Semiconductor device, manufacturing method thereof, and semiconductor manufacturing apparatus
US7153359B2 (en) Crystalline semiconductor film and production method thereof, and semiconductor device and production method thereof
JP2002110544A (ja) レーザアニールによる薄膜結晶成長
JP2004119919A (ja) 半導体薄膜および半導体薄膜の製造方法
US7569439B2 (en) Thin film semiconductor device, production process and information displays
JP2603418B2 (ja) 多結晶半導体薄膜の製造方法
JP2009130231A (ja) 結晶シリコンアレイ、および薄膜トランジスタの製造方法
JP2002057105A (ja) 半導体薄膜製造方法、半導体薄膜製造装置、およびマトリクス回路駆動装置
JP4763740B2 (ja) 薄膜半導体装置及び薄膜半導体装置を用いた画像表示装置
JP5091730B2 (ja) 薄膜半導体装置を用いた画像表示装置の製造方法
JP2005228808A (ja) 半導体デバイスの製造方法
JP2004158584A (ja) 多結晶質シリコン膜製造装置及びそれを用いた製造方法並びに半導体装置
JPH08255753A (ja) 結晶性半導体薄膜の製造方法
JP2005150438A (ja) 半導体デバイスの製造方法
JP2007042980A (ja) 結晶質半導体膜およびその製造方法
JP2005353823A (ja) 結晶性半導体薄膜の製造方法およびそれを用いた半導体装置
JP2005101311A (ja) 半導体デバイスおよびその製造方法

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20080121

RD02 Notification of acceptance of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7422

Effective date: 20080121

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20080314

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20110125

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20110127

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20110325

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20110426

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20110511

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20140520

Year of fee payment: 3

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

LAPS Cancellation because of no payment of annual fees